This project implements a Monte Carlo simulation to model charge carrier transport in silicon sensors, incorporating initial charge distribution, drift, charge diffusion, and especially charge repulsion. The simulator receives detector configurations and X-ray energies.
ROOT: for histogramming, fitting, and visualization.
numpy: for numerical operations.
See the Example.ipynb notebook for a demonstration of the simulator. The histograms from measurements using MÖNCH detector are provided in the Measurements.root file, and decoded in the Example.ipynb notebook.
This project is licensed under the MIT License - see the LICENSE file for details.