Biblio-Database.bib

@article{1987electrical,
  title = {Electrical Properties of Lithium-Intercalated {{InSe}}},
  year = {1987},
  month = mar,
  journal = {Materials Letters},
  volume = {5},
  number = {4},
  pages = {134--139},
  publisher = {{North-Holland}},
  issn = {0167-577X},
  doi = {10.1016/0167-577X(87)90021-8},
  abstract = {We have studied the intercalation reaction of n-type InSe with n-butyl lithium in hexane solution through the time dependence of the electrical resist\ldots},
  langid = {english}
}

@misc{2007physical,
  title = {Physical {{Property Measurement System Hardware Manual}}},
  year = {2007},
  month = jan,
  publisher = {{Quantum Design}}
}

@article{2020century,
  title = {A Century of Ferroelectricity},
  year = {2020},
  month = feb,
  journal = {Nature Materials},
  volume = {19},
  number = {2},
  pages = {129--129},
  publisher = {{Nature Publishing Group}},
  issn = {1476-4660},
  doi = {10.1038/s41563-020-0611-1},
  abstract = {Ferroelectricity was experimentally discovered one hundred years ago, spurring research on its fundamental properties and potential applications.},
  copyright = {2020 Springer Nature Limited},
  langid = {english},
  annotation = {00004}
}

@misc{2020ferroelectricity,
  title = {Ferroelectricity: 100 Years On},
  shorttitle = {Ferroelectricity},
  year = {2020},
  month = nov,
  journal = {Physics World},
  abstract = {Amar S Bhalla and Avadh Saxena pick out their favourite applications of ferroelectricity 100 years on since its discovery},
  howpublished = {https://physicsworld.com/a/ferroelectricity-100-years-on/},
  langid = {british},
  annotation = {00000}
}

@article{algarni2016absorption,
  title = {Absorption and Optical Conduction in {{InSe}}/{{ZnSe}}/{{InSe}} Thin Film Transistors},
  author = {Al Garni, S. E. and Qasrawi, A. F.},
  year = {2016},
  month = apr,
  journal = {Functional Materials Letters},
  volume = {09},
  number = {02},
  pages = {1650019},
  publisher = {{World Scientific Publishing Co.}},
  issn = {1793-6047},
  doi = {10.1142/S1793604716500193},
  abstract = {In this work, (n)InSe/(p)ZnSe and (n)InSe/(p)ZnSe/(n)InSe heterojunction thin film transistor (TFT) devices are produced by the thermal evaporation technique. They are characterized by means of X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersion X-ray spectroscopy and optical spectroscopy techniques. While the InSe films are found to be amorphous, the ZnSe and InSe/ZnSe films exhibited polycrystalline nature of crystallization. The optical analysis has shown that these devices exhibit a conduction band offsets of 0.47 and valence band offsets of 0.67 and 0.74 eV, respectively. In addition, while the dielectric spectra of the InSe and ZnSe displayed resonance peaks at 416 and 528 THz, the dielectric spectra of InSe/ZnSe and InSe/ZnSe/InSe layers indicated two additional peaks at 305 and 350 THz, respectively. On the other hand, the optical conductivity analysis and modeling in the light of free carrier absorption theory reflected low values of drift mobilities associated with incident alternating electric fields at terahertz frequencies. The drift mobility of the charge carrier particles at femtoseconds scattering times increased as a result of the ZnSe sandwiching between two InSe layers. The valence band offsets, the dielectric resonance at 305 and 350 THz and the optical conductivity values nominate TFT devices for use in optoelectronics.},
  keywords = {Band gap,effective mass,Heterojunction,InSe,mobility optical,photo-transport,Resistivity/conductivity,SEM,thin film transistor,XRD}
}

@article{ali2020study,
  title = {A {{Study}} on the {{Temperature-Dependent Operation}} of {{Fluorite-Structure-Based Ferroelectric HfO}}{\textsubscript{2}} {{Memory FeFET}}: {{Pyroelectricity}} and {{Reliability}}},
  shorttitle = {A {{Study}} on the {{Temperature-Dependent Operation}} of {{Fluorite-Structure-Based Ferroelectric HfO2 Memory FeFET}}},
  author = {Ali, T. and K{\"u}hnel, K. and Czernohorsky, M. and Mart, C. and Rudolph, M. and P{\"a}tzold, B. and Lehninger, D. and Olivo, R. and Lederer, M. and M{\"u}ller, F. and Hoffmann, R. and Metzger, J. and Binder, R. and Steinke, P. and K{\"a}mpfe, T. and M{\"u}ller, J. and Seidel, K. and Eng, L. M.},
  year = {2020},
  month = jul,
  journal = {IEEE Transactions on Electron Devices},
  volume = {67},
  number = {7},
  pages = {2981--2987},
  issn = {1557-9646},
  doi = {10.1109/TED.2020.2995781},
  abstract = {We report on the high-temperature operation and reliability of the Si-doped hafnium oxide (HSO) ferroelectric FET (FeFET) emerging memory. In this study, we explore the role of high-temperature operation of the ferroelectric (FE) material on the FeFET in the temperature range of 40-120 \textdegree C. The inverse memory window (MW) dependence on temperature leads to a very small MW size ( 300 mV) at 120 \textdegree C. The recovery of MW size at room temperature (RT) indicates a potential pyroelectric effect as a cause for MW closure upon high-temperature operation. The FeFET state readout shows pronounced effects to erase (ER) threshold voltage (Vth) shift, due to the decrease in remnant polarization and improved substrate Vth shift as the temperature increases. The endurance reliability measured for temperature range (-40 \textdegree C to 40 \textdegree C) with 105 cycles shows a maximized initial MW at low temperatures, whereas higher postcycling interface trap generation occurs as the temperature increases. The FeFET 10 h retention tests at 0 \textdegree C and 40 \textdegree C were extrapolated to ten years and indicated stable properties independent of temperature. The depolarization field (Ed) dependence on the FeFET stack parameters is studied based on an analytical formula. The Ed decreases with increased permittivity of the FE, interface layer (IL), and increased FE film thickness. Substrate doping and temperature seem to have a small impact on Ed, whereas the FE-IL area ratio tuning below unity lowers the Ed. The role of pyroelectric effect on the FeFET memory and operating temperature-induced endurance and retention reliability concerns are discussed.},
  keywords = {Depolarization field,endurance,FeFET,ferroelectric (FE),Iron,metal-ferroelectric-insulator-semiconductor (MFIS),Reliability,retention,temperature dependence,Temperature dependence,Temperature distribution,Temperature measurement}
}

@article{almeida2017colloidal,
  title = {Colloidal {{Monolayer}} {$\beta$}-{{In}}{\textsubscript{2}}{{Se}}{\textsubscript{3}} {{Nanosheets}} with {{High Photoresponsivity}}},
  author = {Almeida, Guilherme and Dogan, Sedat and Bertoni, Giovanni and Giannini, Cinzia and Gaspari, Roberto and Perissinotto, Stefano and Krahne, Roman and Ghosh, Sandeep and Manna, Liberato},
  year = {2017},
  month = mar,
  journal = {Journal of the American Chemical Society},
  volume = {139},
  number = {8},
  pages = {3005--3011},
  publisher = {{American Chemical Society}},
  issn = {0002-7863},
  doi = {10.1021/jacs.6b11255},
  abstract = {We report a low-temperature colloidal synthesis of single-layer, five-atom-thick, {$\beta$}-In2Se3 nanosheets with lateral sizes tunable from {$\sim$}300 to {$\sim$}900 nm, using short aminonitriles (dicyandiamide or cyanamide) as shape controlling agents. The phase and the monolayer nature of the nanosheets were ascertained by analyzing the intensity ratio between two diffraction peaks from two-dimensional slabs of the various phases, determined by diffraction simulations. These findings were further backed-up by comparing and fitting the experimental X-ray diffraction pattern with Debye formula simulated patterns and with side-view high-resolution transmission electron microscopy imaging and simulation. The {$\beta$}-In2Se3 nanosheets were found to be indirect band gap semiconductors (Eg = 1.55 eV), and single nanosheet photodetectors demonstrated high photoresponsivity and fast response times.},
  keywords = {In2Se3 β (1T)}
}

@article{altshuler1999theory,
  title = {Theory of {{Metal-Insulator Transitions}} in {{Gated Semiconductors}}},
  author = {Altshuler, Boris L. and Maslov, Dmitrii L.},
  year = {1999},
  month = jan,
  journal = {Physical Review Letters},
  volume = {82},
  number = {1},
  pages = {145--148},
  publisher = {{American Physical Society}},
  doi = {10.1103/PhysRevLett.82.145},
  abstract = {It is shown that recent experiments indicating a metal-insulator transition in 2D electron systems can be interpreted in terms of a simple model, in which the resistivity is controlled by scattering at charged hole traps located in the oxide layer. The gate voltage changes the number of charged traps which results in a sharp change in the resistivity. The observed exponential temperature dependence of the resistivity in the metallic phase of the transition follows from the temperature dependence of the trap occupation number. The model naturally describes the experimentally observed scaling properties of the transition and the effects of magnetic and electric fields.}
}

@article{amaricci2010extended,
  title = {Extended {{Hubbard}} Model: {{Charge}} Ordering and {{Wigner-Mott}} Transition},
  shorttitle = {Extended {{Hubbard}} Model},
  author = {Amaricci, A. and Camjayi, A. and Haule, K. and Kotliar, G. and Tanaskovi{\'c}, D. and Dobrosavljevi{\'c}, V.},
  year = {2010},
  month = oct,
  journal = {Physical Review B},
  volume = {82},
  number = {15},
  pages = {155102},
  publisher = {{American Physical Society}},
  doi = {10.1103/PhysRevB.82.155102},
  abstract = {Strong correlations effects, which are often associated to the approach to a Mott insulating state, in some cases may be observed even far from half filling. This typically happens whenever the intersite Coulomb repulsion induces a tendency toward charge ordering, an effect that confines the electrons, and in turn favors local moment formation, i.e., Mott localization. A distinct intermediate regime then emerges as a precursor of such a Wigner-Mott transition, which is characterized by both charge and spin correlations, displaying large mass enhancements and strong renormalizations of other Fermi-liquid parameters. Here we present a careful study of a quarter-filled extended Hubbard model\textemdash a simple example where such physics can be studied in detail, and discuss its relevance for the understanding of the phenomenology of low-density two-dimensional electron gases.}
}

@article{amory2003study,
  title = {Study of a Growth Instability of {$\gamma$}-{{In}}{\textsubscript{2}}{{Se}}{\textsubscript{3}}},
  author = {Amory, C. and Bern{\`e}de, J. C. and Marsillac, S.},
  year = {2003},
  month = nov,
  journal = {Journal of Applied Physics},
  volume = {94},
  number = {10},
  pages = {6945--6948},
  publisher = {{American Institute of Physics}},
  issn = {0021-8979},
  doi = {10.1063/1.1622117},
  keywords = {In2Se3 κ}
}

@article{anderson1958absence,
  title = {Absence of {{Diffusion}} in {{Certain Random Lattices}}},
  author = {Anderson, P. W.},
  year = {1958},
  month = mar,
  journal = {Physical Review},
  volume = {109},
  number = {5},
  pages = {1492--1505},
  publisher = {{American Physical Society}},
  doi = {10.1103/PhysRev.109.1492},
  abstract = {This paper presents a simple model for such processes as spin diffusion or conduction in the "impurity band." These processes involve transport in a lattice which is in some sense random, and in them diffusion is expected to take place via quantum jumps between localized sites. In this simple model the essential randomness is introduced by requiring the energy to vary randomly from site to site. It is shown that at low enough densities no diffusion at all can take place, and the criteria for transport to occur are given.}
}

@article{anderson1965symmetry,
  title = {Symmetry {{Considerations}} on {{Martensitic Transformations}}: "{{Ferroelectric}}" {{Metals}}?},
  shorttitle = {Symmetry {{Considerations}} on {{Martensitic Transformations}}},
  author = {Anderson, P. W. and Blount, E. I.},
  year = {1965},
  month = feb,
  journal = {Physical Review Letters},
  volume = {14},
  number = {7},
  pages = {217--219},
  doi = {10.1103/physrevlett.14.217},
  abstract = {DOI:https://doi.org/10.1103/PhysRevLett.14.217},
  annotation = {00385}
}

@article{apostol2015band,
  title = {Band {{Bending}} at {{Metal-Semiconductor Interfaces}}, {{Ferroelectric Surfaces}} and {{Metal-Ferroelectric Interfaces Investigated}} by {{Photoelectron Spectroscopy}}},
  author = {Apostol, Nicoleta Georgiana and Teodorescu, Cristian-Mihail},
  year = {2015},
  journal = {Surface Science Tools for Nanomaterials Characterization},
  pages = {405--461},
  publisher = {{Springer, Berlin, Heidelberg}},
  doi = {10.1007/978-3-662-44551-8_11},
  abstract = {X-ray photoelectron spectroscopy is nowadays a well-established technique for the determination of chemical compounds with surface sensitivity. To the atomic and chemical specificity and surface...},
  langid = {english}
}

@article{arora2021recent,
  title = {Recent Progress in Contact, Mobility, and Encapsulation Engineering of {{InSe}} and {{GaSe}}},
  author = {Arora, Himani and Erbe, Artur},
  year = {2021},
  journal = {InfoMat},
  volume = {3},
  number = {6},
  pages = {662--693},
  issn = {2567-3165},
  doi = {10.1002/inf2.12160},
  abstract = {The field of two-dimensional (2D) materials has stimulated considerable interest in the scientific community. Owing to quantum confinement in one direction, intriguing properties have been reported in 2D materials that cannot be observed in their bulk form. The advent of semiconducting 2D materials with a broad range of electronic properties has provided fascinating opportunities to design and configure next-generation electronics. One such emerging class is the family of III-VI monochalcogenides, the two prominent members of which are indium selenide (InSe) and gallium selenide (GaSe). In contrast to transition metal dichalcogenides, their high intrinsic mobility and the availability of a direct bandgap at small thicknesses have attracted researchers to investigate the underlying physical phenomena as well as their technological applications. However, the sensitivity of InSe and GaSe to environmental influences has limited their exploitation in functional devices. The lack of methods for their scalable synthesis further hinders the realization of their devices. This review article outlines recent advancements in the synthesis and understanding of the charge transport properties of InSe and GaSe for their integration into technological applications. A detailed summary of the improvements in the device structure by optimizing extrinsic factors such as bottom substrates, metal contacts, and device fabrication schemes is provided. Furthermore, various encapsulation techniques that have been proven effective in preventing the degradation of InSe and GaSe layers under ambient conditions are thoroughly discussed. Finally, this article presents an outlook on future research ventures with respect to ongoing developments and practical viability of these materials.},
  langid = {english},
  keywords = {device,InSe,mobility,Raman,review article}
}

@article{aspect2009anderson,
  title = {Anderson Localization of Ultracold Atoms},
  author = {Aspect, Alain and Inguscio, Massimo},
  year = {2009},
  month = aug,
  journal = {Physics Today},
  volume = {62},
  number = {8},
  pages = {30--35},
  publisher = {{American Institute of Physics}},
  issn = {0031-9228},
  doi = {10.1063/1.3206092}
}

@article{azadmanjiri2018graphenesupported,
  title = {Graphene-Supported {{2D}} Transition Metal Oxide Heterostructures},
  author = {Azadmanjiri, Jalal and Srivastava, Vijay K. and Kumar, Parshant and Wang, James and Yu, Aimin},
  year = {2018},
  month = jul,
  journal = {Journal of Materials Chemistry A},
  volume = {6},
  number = {28},
  pages = {13509--13537},
  publisher = {{The Royal Society of Chemistry}},
  issn = {2050-7496},
  doi = {10.1039/C8TA03404D},
  abstract = {Heterostructures of two-dimensional (2D) nanomaterials such as graphene/transition metal oxide (TMO) have recently attracted great interest due to their unique structures and superior properties that none of the individual conventional 2D nanomaterials could have. These unusual properties are due to alteration of the Fermi energy position, density of states, and work function of those heterostructures rather than their chemical components. The physical and quantum properties, the interfacial layer and the synergistic effect of each component in 2D heterostructures lead to the generation of new behavior and properties. In this review article, we are focusing on the recent progress in studying the characteristics and properties of 2D graphene/TMO heterostructures, and their significant applications in advanced energy storage and conversion devices. In this context, we firstly introduce bottom-up wet chemical approaches for the synthesis of 2D graphene/TMO heterostructures. The electron transfer, bonding chemistry and defects at the interface of these heterostructures are then discussed. Thirdly, the tunable properties of 2D graphene/TMO heterostructures and their applications in advanced energy storage and conversion devices are presented. The final section discusses the challenges and future prospects of 2D graphene/TMO heterostructures.},
  langid = {english}
}

@book{bain2017ferroelectrics,
  title = {Ferroelectrics: {{Principles}} and {{Applications}}},
  shorttitle = {Ferroelectrics},
  author = {Bain, Ashim Kumar and Chand, Prem},
  year = {2017},
  month = jan,
  edition = {1 edition},
  publisher = {{Wiley-VCH}},
  abstract = {Combining both fundamental principles and real-life applications in a single volume, this book discusses the latest research results in ferroelectrics, including many new ferroelectric materials for the latest technologies, such as capacitors, transducers and memories. The first two chapters introduce dielectrics and microscopic materials properties, while the following chapter discusses pyroelectricity and piezoelectricity. The larger part of the text is devoted to ferroelectricity and ferroelectric ceramics, with not only their fundamentals but also applications discussed. The book concludes with a look at the future for laser printed materials and applications. With over 600 references to recent publications on piezoelectric and ferroelectric materials, this is an invaluable reference for physicists, materials scientists and engineers.},
  isbn = {978-3-527-34214-3},
  langid = {english},
  annotation = {00000  ZSCC: 0000025}
}

@article{balakrishnan2016quantum,
  title = {Quantum Confinement and Photoresponsivity of {$\beta$}-{{In}}{\textsubscript{2}}{{Se}}{\textsubscript{3}} Nanosheets Grown by Physical Vapour Transport},
  author = {Balakrishnan, Nilanthy and Staddon, Christopher R. and Smith, Emily F. and Stec, Jakub and Gay, Dean and Mudd, Garry W. and {Oleg Makarovsky} and Kudrynskyi, Zakhar R. and Kovalyuk, Zakhar D. and Eaves, Laurence and Patan{\`e}, Amalia and Beton, Peter H.},
  year = {2016},
  journal = {2D Materials},
  volume = {3},
  number = {2},
  pages = {025030},
  issn = {2053-1583},
  doi = {10.1088/2053-1583/3/2/025030},
  abstract = {We demonstrate that {$\beta$} -In 2 Se 3 layers with thickness ranging from 2.8 to 100 nm can be grown on SiO 2 /Si, mica and graphite using a physical vapour transport method. The {$\beta$} -In 2 Se 3 layers are chemically stable at room temperature and exhibit a blue-shift of the photoluminescence emission when the layer thickness is reduced, due to strong quantum confinement of carriers by the physical boundaries of the material. The layers are characterised using Raman spectroscopy and x-ray diffraction from which we confirm lattice constants c = 28.31 {$\pm$} 0.05 \AA{} and a = 3.99 {$\pm$} 0.02 \AA. In addition, these layers show high photoresponsivity of up to {$\sim$}2 \texttimes{} 10 3 A W -1 at {$\lambda$} = 633 nm, with rise and decay times of {$\tau$} r = 0.6 ms and {$\tau$} d = 2.5 ms, respectively, confirming the potential of the as-grown layers for high sensitivity photodetectors.},
  langid = {english},
  keywords = {AFM,device,In2Se3 α,In2Se3 β,photo-transport,photoluminescence,Raman,XPS,XRD},
  annotation = {00000}
}

@article{balakrishnan2018epitaxial,
  title = {Epitaxial Growth of {$\gamma$}-{{InSe}} and {$\alpha$}, {$\beta$}, and {$\gamma$}-{{In}}{\textsubscript{2}}{{Se}}{\textsubscript{3}} on {$\epsilon$}-{{GaSe}}},
  author = {Balakrishnan, Nilanthy and Steer, Elisabeth D. and Smith, Emily F. and Kudrynskyi, Zakhar R. and Kovalyuk, Zakhar D. and Eaves, Laurence and Patan{\`e}, Amalia and Beton, Peter H.},
  year = {2018},
  month = jun,
  journal = {2D Materials},
  volume = {5},
  number = {3},
  pages = {035026},
  issn = {2053-1583},
  doi = {10.1088/2053-1583/aac479},
  abstract = {We demonstrate that {$\gamma$}-InSe and the {$\alpha$}, {$\beta$} and {$\gamma$} phases of In2Se3 can be grown epitaxially on {$\epsilon$}-GaSe substrates using a physical vapour transport method. By exploiting the temperature gradient within the tube furnace, we can grow selectively different phases of InxSey depending on the position of the substrate within the furnace. The uniform cleaved surface of {$\epsilon$}-GaSe enables the epitaxial growth of the InxSey layers, which are aligned over large areas. The InxSey epilayers are characterised using Raman, photoluminescence, x-ray photoelectron and electron dispersive x-ray spectroscopies. Each InxSey phase and stoichiometry exhibits distinct optical and vibrational properties, providing a tuneable photoluminescence emission range from 1.3 eV to 2 eV suitable for exploitation in electronics and optoelectronics.},
  langid = {english},
  keywords = {Band gap,film,In2Se3 α (3R),In2Se3 β,In2Se3 γ,InSe γ (3R),photoluminescence,Raman},
  annotation = {ZSCC: 0000016}
}

@article{balke2015differentiating,
  title = {Differentiating {{Ferroelectric}} and {{Nonferroelectric Electromechanical Effects}} with {{Scanning Probe Microscopy}}},
  author = {Balke, Nina and Maksymovych, Petro and Jesse, Stephen and Herklotz, Andreas and Tselev, Alexander and Eom, Chang-Beom and Kravchenko, Ivan I. and Yu, Pu and Kalinin, Sergei V.},
  year = {2015},
  month = jun,
  journal = {ACS Nano},
  volume = {9},
  number = {6},
  pages = {6484--6492},
  publisher = {{American Chemical Society}},
  issn = {1936-0851},
  doi = {10.1021/acsnano.5b02227},
  abstract = {Ferroelectricity in functional materials remains one of the most fascinating areas of modern science in the past several decades. In the last several years, the rapid development of piezoresponse force microscopy (PFM) and spectroscopy revealed the presence of electromechanical hysteresis loops and bias-induced remnant polar states in a broad variety of materials including many inorganic oxides, polymers, and biosystems. In many cases, this behavior was interpreted as the ample evidence for ferroelectric nature of the system. Here, we systematically analyze PFM responses on ferroelectric and nonferroelectric materials and demonstrate that mechanisms unrelated to ferroelectricity can induce ferroelectric-like characteristics through charge injection and electrostatic forces on the tip. We will focus on similarities and differences in various PFM measurement characteristics to provide an experimental guideline to differentiate between ferroelectric material properties and charge injection. In the end, we apply the developed measurement protocols to an unknown ferroelectric material.},
  annotation = {00182}
}

@article{bandurin2017high,
  title = {High Electron Mobility, Quantum {{Hall}} Effect and Anomalous Optical Response in Atomically Thin {{InSe}}},
  author = {Bandurin, Denis A. and Tyurnina, Anastasia V. and Yu, Geliang L. and Mishchenko, Artem and Z{\'o}lyomi, Viktor and Morozov, Sergey V. and Kumar, Roshan Krishna and Gorbachev, Roman V. and Kudrynskyi, Zakhar R. and Pezzini, Sergio and Kovalyuk, Zakhar D. and Zeitler, Uli and Novoselov, Konstantin S. and Patan{\`e}, Amalia and Eaves, Laurence and Grigorieva, Irina V. and Fal'ko, Vladimir I. and Geim, Andre K. and Cao, Yang},
  year = {2017},
  month = mar,
  journal = {Nature Nanotechnology},
  volume = {12},
  number = {3},
  pages = {223--227},
  publisher = {{Nature Publishing Group}},
  issn = {1748-3395},
  doi = {10.1038/nnano.2016.242},
  abstract = {Encapsulated few-layer InSe exhibits a remarkably high electronic quality, which is promising for the development of ultrathin-body high-mobility nanoelectronics.},
  copyright = {2016 Nature Publishing Group},
  langid = {english},
  keywords = {Carrier density,device,FET,flake,hBN,Heterostructure,InSe γ (3R),magnetoconductance,mobility,monolayer,photoluminescence,Resistivity/conductivity,Resistivity/conductivity-temperature},
  annotation = {ZSCC: 0000000[s0]}
}

@article{baranovskii2014theoretical,
  title = {Theoretical Description of Charge Transport in Disordered Organic Semiconductors},
  author = {Baranovskii, S. D.},
  year = {2014},
  month = mar,
  journal = {physica status solidi (b)},
  volume = {251},
  number = {3},
  pages = {487--525},
  publisher = {{John Wiley \& Sons, Ltd}},
  issn = {0370-1972},
  doi = {10.1002/pssb.201350339},
  abstract = {Twenty years ago Heinz B\"assler published in this journal the seminal review article on charge transport in disordered organic semiconductors [Phys. Status Solidi B 175, 15 (1993)], which has become one of the most popular references in this research field. Thanks to this paper, our understanding of charge transport in disordered organic materials has been essentially improved in the past two decades. New theoretical methods have been developed and new results on various phenomena related to charge transport in disordered organic materials have been obtained. The aim of the current review is to present these new theoretical methods and to highlight the most essential results obtained in their framework. While theoretical consideration in the article by B\"assler was based on computer simulations, particular attention in the current review is given to the development of analytical theories. Dependences of charge carrier mobility and diffusivity on temperature, electric field, carrier concentration and on material and sample parameters are discussed in detail. Schematic behaviour of charge carriers within the Gaussian density of states (DOS)},
  keywords = {charge transport,disorder,hopping conduction,organic semiconductors}
}

@article{barbosa2019studying,
  title = {Studying Electronic Properties in {{GaN}} without Electrical Contacts Using {$\gamma$}-{$\gamma$} vs E--{$\gamma$} {{Perturbed Angular Correlations}}},
  author = {Barbosa, M. B. and Correia, J. G. and Lorenz, K. and Vianden, R. and Ara{\'u}jo, J. P.},
  year = {2019},
  month = oct,
  journal = {Scientific Reports},
  volume = {9},
  number = {1},
  pages = {15734},
  publisher = {{Nature Publishing Group}},
  issn = {2045-2322},
  doi = {10.1038/s41598-019-52098-5},
  abstract = {The potential use of combined e--{$\gamma$} vs {$\gamma$}-{$\gamma$} Perturbed Angular Correlations (PAC) experiments as a possible alternative to study electronic properties of materials and/or samples where Hall effect measurements are difficult to perform due to low-quality ohmic contacts is here demonstrated using Si- and Zn-doped GaN samples as a showcase example. To do so, the lattice site of implanted 181Hf/181Ta and the recombination of Ta ionized and excited electronic states were studied as a function of temperature and sample doping in GaN. By combining the {$\gamma$}-{$\gamma$} and e--{$\gamma$} PAC results with Density Functional Theory simulations, it was possible to assign a single stable site with a double-donor character for Ta in GaN. A metastable charge state was also identified at particular temperatures using e--{$\gamma$} PAC. A thermally activated process was observed for the electronic recombination at high temperatures with activation energies of 15(2) meV and 12(1) meV for the Si- and Zn-doped samples, respectively, and attributed to Si shallow donors present in both samples. A reduced number of available electrons was observed in the Zn-doped sample due to donor compensation by the Zn acceptors. At low temperatures, it is suggested that the recombination process occurs via Variable Range Hopping. The doping characteristics of both samples were successfully distinguished.},
  copyright = {2019 The Author(s)},
  langid = {english},
  annotation = {Bandiera\_abtest: a Cc\_license\_type: cc\_by Cg\_type: Nature Research Journals Primary\_atype: Research Subject\_term: Characterization and analytical techniques;Semiconductors Subject\_term\_id: characterization-and-analytical-techniques;semiconductors}
}

@article{bartlett2013nonaqueous,
  title = {Non-Aqueous Electrodeposition of p-Block Metals and Metalloids from Halometallate Salts},
  author = {Bartlett, Philip N. and Cook, David and de Groot, C. H. (Kees) and Hector, Andrew L. and Huang, Ruomeng and Jolleys, Andrew and Kissling, Gabriela P. and Levason, William and Pearce, Stuart J. and Reid, Gillian},
  year = {2013},
  month = aug,
  journal = {RSC Advances},
  volume = {3},
  number = {36},
  pages = {15645--15654},
  publisher = {{The Royal Society of Chemistry}},
  issn = {2046-2069},
  doi = {10.1039/C3RA40739J},
  abstract = {A versatile electrochemical system for the non-aqueous electrodeposition of crystalline, oxide free p-block metals and metalloids is described, and it is demonstrated that by combining mixtures of these reagents, this system is suitable for electrodeposition of binary semiconductor alloys. The tetrabutylammonium halometallates, [NnBu4][InCl4], [NnBu4][SbCl4], [NnBu4][BiCl4], [NnBu4]2[SeCl6] and [NnBu4]2[TeCl6], are readily dissolved in CH2Cl2 and form reproducible electrochemical systems with good stability in the presence of a [NnBu4]Cl supporting electrolyte. The prepared electrolytes show a wide potential window and the electrodeposition of indium, antimony, bismuth, tellurium and selenium on glassy carbon and titanium nitride electrodes has been demonstrated. The deposited elements were characterised by scanning electron microscopy, energy dispersive X-ray analysis and powder X-ray diffraction. The compatibility of the reagents permits the preparation of a single electrolyte containing several halometallate species which allows the electrodeposition of binary materials, as is demonstrated for InSb. This room temperature, `bottom-up' electrochemical approach should thus be suitable for the one-pot deposition of a wide range of compound semiconductor materials.},
  langid = {english}
}

@article{bartolomeo2017hysteresis,
  title = {Hysteresis in the Transfer Characteristics of {{MoS}}{\textsubscript{2}} Transistors},
  author = {Bartolomeo, Antonio Di and Genovese, Luca and Giubileo, Filippo and Iemmo, Laura and Luongo, Giuseppe and Foller, Tobias and Schleberger, Marika},
  year = {2017},
  month = oct,
  journal = {2D Materials},
  volume = {5},
  number = {1},
  pages = {015014},
  publisher = {{IOP Publishing}},
  issn = {2053-1583},
  doi = {10.1088/2053-1583/aa91a7},
  langid = {english}
}

@article{beckers2018cryogenic,
  title = {Cryogenic {{MOS Transistor Model}}},
  author = {Beckers, Arnout and Jazaeri, Farzan and Enz, Christian},
  year = {2018},
  month = sep,
  journal = {IEEE Transactions on Electron Devices},
  volume = {65},
  number = {9},
  pages = {3617--3625},
  issn = {1557-9646},
  doi = {10.1109/TED.2018.2854701},
  abstract = {This paper presents a physics-based analytical model for the MOS transistor operating continuously from room temperature down to liquid-helium temperature (4.2 K) from depletion to strong inversion and in the linear and saturation regimes. The model is developed relying on the 1-D Poisson equation and the drift-diffusion transport mechanism. The validity of the Maxwell-Boltzmann approximation is demonstrated in the limit to 0 K as a result of dopant freezeout in cryogenic equilibrium. Explicit MOS transistor expressions are then derived, including incomplete dopant ionization, bandgap widening, mobility reduction, and interface charge traps. The temperature dependence of the interface trapping process explains the discrepancy between the measured value of the subthreshold swing and the thermal limit at deep-cryogenic temperatures. The accuracy of the developed model is validated by experimental results on long devices of a commercial 28-nm bulk CMOS process. The proposed model provides the core expressions for the development of physically accurate compact models dedicated to low-temperature CMOS circuit simulation.},
  keywords = {Computational modeling,Cryo-CMOS,cryogenic MOSFET,Cryogenics,freezeout,incomplete ionization,Integrated circuit modeling,interface traps,Ionization,low temperature,Mathematical model,MOS transistor,MOSFET,physical modeling}
}

@article{beckers2020physical,
  title = {Physical {{Model}} of {{Low-Temperature}} to {{Cryogenic Threshold Voltage}} in {{MOSFETs}}},
  author = {Beckers, Arnout and Jazaeri, Farzan and Grill, Alexander and Narasimhamoorthy, Subramanian and Parvais, Bertrand and Enz, Christian},
  year = {2020},
  journal = {IEEE Journal of the Electron Devices Society},
  volume = {8},
  pages = {780--788},
  issn = {2168-6734},
  doi = {10.1109/JEDS.2020.2989629},
  abstract = {This article presents a physical model of the threshold voltage in MOSFETs valid down to 4.2 K. Interface traps close to the band edge modify the saturating temperature behavior of the threshold voltage observed in cryogenic measurements. Dopant freezeout, bandgap widening, and uniformly distributed traps in the bandgap do not change the qualitative behavior of the threshold voltage over temperature. Care should be taken because dopant freezeout results in a different physical definition of the threshold voltage. Using different definitions changes significantly the threshold current level. The proposed model is experimentally validated with measurements in large-area nMOS and pMOS devices of a commercial 28-nm bulk CMOS process down to 4.2 K. Our modeling results suggest that a pMOS-specific phenomenon in the gate stack is responsible for the non-saturating temperature behavior of the threshold voltage in pMOS devices.},
  keywords = {28-nm bulk CMOS,cryo-CMOS,cryogenic,Cryogenics,freezeout,incomplete ionization,interface traps,Ionization,MOSFET,Temperature dependence,threshold voltage,Threshold voltage}
}

@article{beckers2020theoretical,
  title = {Theoretical {{Limit}} of {{Low Temperature Subthreshold Swing}} in {{Field-Effect Transistors}}},
  author = {Beckers, Arnout and Jazaeri, Farzan and Enz, Christian},
  year = {2020},
  month = feb,
  journal = {IEEE Electron Device Letters},
  volume = {41},
  number = {2},
  pages = {276--279},
  issn = {1558-0563},
  doi = {10.1109/LED.2019.2963379},
  abstract = {This letter reports a temperature-dependent limit for the subthreshold swing in MOSFETs that deviates from the Boltzmann limit at deep-cryogenic temperatures. Below a critical temperature, the derived limit saturates to a value that is independent of temperature and proportional to the characteristic decay of a band tail. The proposed expression tends to the Boltzmann limit when the decay of the band tail tends to zero. Since the saturation is universally observed in different types of MOSFETs (regardless of dimension or semiconductor material), this suggests that an intrinsic mechanism is responsible for the band tail.},
  keywords = {Band tail,cryogenic,Logic gates,modeling,MOSFET,Photonic band gap,Silicon,subthreshold slope,subthreshold swing,Temperature,Temperature dependence,Temperature measurement}
}

@article{benedek2016ferroelectric,
  title = {`{{Ferroelectric}}' Metals Reexamined: Fundamental Mechanisms and Design Considerations for New Materials},
  shorttitle = {`{{Ferroelectric}}' Metals Reexamined},
  author = {Benedek, Nicole A. and Birol, Turan},
  year = {2016},
  month = may,
  journal = {Journal of Materials Chemistry C},
  volume = {4},
  number = {18},
  pages = {4000--4015},
  issn = {2050-7534},
  doi = {10.1039/c5tc03856a},
  abstract = {The recent observation of a ferroelectric-like structural transition in metallic LiOsO3 has generated a flurry of interest in the properties of polar metals. Such materials are thought to be rare because free electrons screen out the long-range electrostatic forces that favor a polar structure with a dipole moment in every unit cell. In this work, we question whether long-range electrostatic forces are always the most important ingredient in driving polar distortions. We use crystal chemical models, in combination with first-principles Density Functional Theory calculations, to explore the mechanisms of inversion-symmetry breaking in LiOsO3 and both insulating and electron-doped ATiO3 perovskites, A = Ba, Sr, Ca. Although electrostatic forces do play a significant role in driving the polar instability of BaTiO3 (which is suppressed under electron doping), the polar phases of CaTiO3 and LiOsO3 emerge through a mechanism driven by local bonding preferences and this mechanism is `resistant' to the presence of charge carriers. Hence, our results suggest that there is no fundamental incompatibility between metallicity and polar distortions. We use the insights gained from our calculations to suggest design principles for new polar metals and promising avenues for further research.},
  langid = {english},
  annotation = {00061}
}

@article{bergeron2021polymorphism,
  title = {Polymorphism in {{Post-Dichalcogenide Two-Dimensional Materials}}},
  author = {Bergeron, Hadallia and Lebedev, Dmitry and Hersam, Mark C.},
  year = {2021},
  month = feb,
  journal = {Chemical Reviews},
  volume = {121},
  number = {4},
  pages = {2713--2775},
  publisher = {{American Chemical Society}},
  issn = {0009-2665},
  doi = {10.1021/acs.chemrev.0c00933},
  abstract = {Two-dimensional (2D) materials exhibit a wide range of atomic structures, compositions, and associated versatility of properties. Furthermore, for a given composition, a variety of different crystal structures (i.e., polymorphs) can be observed. Polymorphism in 2D materials presents a fertile landscape for designing novel architectures and imparting new functionalities. The objective of this Review is to identify the polymorphs of emerging 2D materials, describe their polymorph-dependent properties, and outline methods used for polymorph control. Since traditional 2D materials (e.g., graphene, hexagonal boron nitride, and transition metal dichalcogenides) have already been studied extensively, the focus here is on polymorphism in post-dichalcogenide 2D materials including group III, IV, and V elemental 2D materials, layered group III, IV, and V metal chalcogenides, and 2D transition metal halides. In addition to providing a comprehensive survey of recent experimental and theoretical literature, this Review identifies the most promising opportunities for future research including how 2D polymorph engineering can provide a pathway to materials by design.},
  keywords = {In2Se3 α (2H),In2Se3 α (3R),In2Se3 β (1T),In2Se3 β (2H),In2Se3 β (3R),In2Se3 β',review article}
}

@article{bergmann2010weak,
  title = {Weak Localization and Its Applications as an Experimental Tool},
  author = {Bergmann, Gerd},
  year = {2010},
  month = may,
  journal = {International Journal of Modern Physics B},
  volume = {24},
  number = {12n13},
  pages = {2015--2052},
  publisher = {{World Scientific Publishing Co.}},
  issn = {0217-9792},
  doi = {10.1142/S021797921006468X},
  abstract = {The resistance of two-dimensional electron systems such as thin disordered films shows deviations from Boltzmann theory, which are caused by quantum corrections and are called weak localization. The theoretical origin of weak localization is the Langer\textendash Neal graph in Kubo formalism. It represents an interference experiment with conduction electrons split into pairs of waves interfering in the back-scattering direction. The intensity of the interference (integrated over the time) can easily be measured by the resistance of the film. The application of a magnetic field B destroys the phase coherence after a time which is proportional to 1/B. For a field of 1 T this time is of the order of 1 ps. Therefore with a dc experiment, one can measure characteristic times of the electron system in the range of picoseconds. Weak localization has been applied to measure dephasing, spin-orbit scattering, tunneling times, etc. One important field of application is the investigation of magnetic systems and magnetic impurities by measuring the magnetic dephasing time and its temperature dependence. Here the Kondo maximum of spin-flip scattering, spin-fluctuations, Fermi liquid behavior and magnetic d-resonances have been investigated. Another field is the detection of magnetic moments for very dilute alloys and surface impurities. This article given a brief survey of different applications of weak localization with a focus on magnetic impurities.}
}

@article{blom1994ferroelectric,
  title = {Ferroelectric {{Schottky Diode}}},
  author = {Blom, P. W. M. and Wolf, R. M. and Cillessen, J. F. M. and Krijn, M. P. C. M.},
  year = {1994},
  month = oct,
  journal = {Physical Review Letters},
  volume = {73},
  number = {15},
  pages = {2107--2110},
  publisher = {{American Physical Society}},
  doi = {10.1103/PhysRevLett.73.2107},
  abstract = {A Schottky contact consisting of a semiconducting ferroelectric material and a high work function metal shows a bistable conduction characteristic. An on/off ratio of about 2 orders of magnitude was obtained in a structure consisting of a 0.2 {$\mu$}m ferroelectric PbTiO3 film, a Au Schottky contact, and a La0.5Sr0.5CoO3 Ohmic bottom electrode. The observations are explained by a model in which the depletion width of the ferroelectric Schottky diode is determined by the polarization dependence of the internal electric field at the metal-ferroelectric interface.}
}

@article{boggild2017mapping,
  title = {Mapping the Electrical Properties of Large-Area Graphene},
  author = {B{\o}ggild, Peter and Mackenzie, David M. A. and Whelan, Patrick R. and Petersen, Dirch H. and Buron, Jonas Due and Zurutuza, Amaia and Gallop, John and Hao, Ling and Jepsen, Peter U.},
  year = {2017},
  month = sep,
  journal = {2D Materials},
  volume = {4},
  number = {4},
  pages = {042003},
  publisher = {{IOP Publishing}},
  issn = {2053-1583},
  doi = {10/gddtd4},
  abstract = {The significant progress in terms of fabricating large-area graphene films for transparent electrodes, barriers, electronics, telecommunication and other applications has not yet been accompanied by efficient methods for characterizing the electrical properties of large-area graphene. While in the early prototyping as well as research and development phases, electrical test devices created by conventional lithography have provided adequate insights, this approach is becoming increasingly problematic due to complications such as irreversible damage to the original graphene film, contamination, and a high measurement effort per device. In this topical review, we provide a comprehensive overview of the issues that need to be addressed by any large-area characterisation method for electrical key performance indicators, with emphasis on electrical uniformity and on how this can be used to provide a more accurate analysis of the graphene film. We review and compare three different, but complementary approaches that rely either on fixed contacts (dry laser lithography), movable contacts (micro four point probes) and non-contact (terahertz time-domain spectroscopy) between the probe and the graphene film, all of which have been optimized for maximal throughput and accuracy, and minimal damage to the graphene film. Of these three, the main emphasis is on THz time-domain spectroscopy, which is non-destructive, highly accurate and allows both conductivity, carrier density and carrier mobility to be mapped across arbitrarily large areas at rates that by far exceed any other known method. We also detail how the THz conductivity spectra give insights on the scattering mechanisms, and through that, the microstructure of graphene films subject to different growth and transfer processes. The perspectives for upscaling to realistic production environments are discussed.},
  langid = {english},
  annotation = {00037}
}

@article{borkar2017experimental,
  title = {Experimental Evidence of Electronic Polarization in a Family of Photo-Ferroelectrics},
  author = {Borkar, Hitesh and Rao, Vaibhav and Tomar, M. and Gupta, Vinay and F. Scott, J. and Kumar, Ashok},
  year = {2017},
  journal = {RSC Advances},
  volume = {7},
  number = {21},
  pages = {12842--12855},
  publisher = {{Royal Society of Chemistry}},
  doi = {10.1039/C7RA00500H},
  langid = {english},
  keywords = {Pb1−x(Li0.5Bi0.5)x(Zr0.2Ti0.8)O3,PLBZT,Schottky}
}

@article{brenneck2020ferroelectricity,
  title = {Ferroelectricity\textemdash{{A}} Revolutionary Century of Discovery},
  author = {Brenneck, Geoff and Sherbondy, Rachel and Schwartz, Robert and Ihlefeld, Jon},
  year = {2020},
  journal = {Am. Cer. Soc. Bull},
  volume = {99},
  pages = {24--30},
  keywords = {⛔ No DOI found}
}

@article{brotons-gisbert2016nanotexturing,
  title = {Nanotexturing {{To Enhance Photoluminescent Response}} of {{Atomically Thin Indium Selenide}} with {{Highly Tunable Band Gap}}},
  author = {{Brotons-Gisbert}, Mauro and {Andres-Penares}, Daniel and Suh, Joonki and Hidalgo, Francisco and Abargues, Rafael and {Rodr{\'i}guez-Cant{\'o}}, Pedro J. and Segura, Alfredo and Cros, Ana and Tobias, Gerard and Canadell, Enric and Ordej{\'o}n, Pablo and Wu, Junqiao and {Mart{\'i}nez-Pastor}, Juan P. and {S{\'a}nchez-Royo}, Juan F.},
  year = {2016},
  month = may,
  journal = {Nano Letters},
  volume = {16},
  number = {5},
  pages = {3221--3229},
  publisher = {{American Chemical Society}},
  issn = {1530-6984},
  doi = {10.1021/acs.nanolett.6b00689},
  abstract = {Manipulating properties of matter at the nanoscale is the essence of nanotechnology, which has enabled the realization of quantum dots, nanotubes, metamaterials, and two-dimensional materials with tailored electronic and optical properties. Two-dimensional semiconductors have revealed promising perspectives in nanotechnology. However, the tunability of their physical properties is challenging for semiconductors studied until now. Here we show the ability of morphological manipulation strategies, such as nanotexturing or, at the limit, important surface roughness, to enhance light absorption and the luminescent response of atomically thin indium selenide nanosheets. Besides, quantum-size confinement effects make this two-dimensional semiconductor to exhibit one of the largest band gap tunability ranges observed in a two-dimensional semiconductor: from infrared, in bulk material, to visible wavelengths, at the single layer. These results are relevant for the design of new optoelectronic devices, including heterostructures of two-dimensional materials with optimized band gap functionalities and in-plane heterojunctions with minimal junction defect density.},
  keywords = {AFM,Band gap,flake,InSe,photoluminescence,SEM}
}

@article{brunthaler2007trap,
  title = {Trap {{Model}} for the {{Metal}}-{{Insulator Transition}} in Two-dimensional {{Si}}-{{MOS}} Structures},
  author = {Brunthaler, G. and H{\"o}rmann, T.},
  year = {2007},
  month = apr,
  journal = {AIP Conference Proceedings},
  volume = {893},
  number = {1},
  pages = {187--188},
  publisher = {{American Institute of Physics}},
  issn = {0094-243X},
  doi = {10.1063/1.2729832}
}

@article{camjayi2008coulomb,
  title = {Coulomb Correlations and the {{Wigner}}\textendash{{Mott}} Transition},
  author = {Camjayi, A. and Haule, K. and Dobrosavljevi{\'c}, V. and Kotliar, G.},
  year = {2008},
  month = dec,
  journal = {Nature Physics},
  volume = {4},
  number = {12},
  pages = {932--935},
  publisher = {{Nature Publishing Group}},
  issn = {1745-2481},
  doi = {10.1038/nphys1106},
  abstract = {Evidence for metal\textendash insulator transitions in dilute 2D electron gases has sparked controversy and debate. A new model suggests such behaviour could arise from strong correlations driven by non-local Coulomb interactions, providing an alternative view to that which considers disorder to be the over-riding influence.},
  langid = {english},
  annotation = {Bandiera\_abtest: a Cg\_type: Nature Research Journals Primary\_atype: Research}
}

@article{casse2020cryogenic,
  title = {Cryogenic {{Operation}} of {{Thin-Film FDSOI nMOS Transistors}}: {{The Effect}} of {{Back Bias}} on {{Drain Current}} and {{Transconductance}}},
  shorttitle = {Cryogenic {{Operation}} of {{Thin-Film FDSOI nMOS Transistors}}},
  author = {Cass{\'e}, M. and Paz, B. Cardoso and Ghibaudo, G. and Poiroux, T. and Barraud, S. and Vinet, M. and {de Franceschi}, S. and Meunier, T. and Gaillard, F.},
  year = {2020},
  month = nov,
  journal = {IEEE Transactions on Electron Devices},
  volume = {67},
  number = {11},
  pages = {4636--4640},
  issn = {1557-9646},
  doi = {10.1109/TED.2020.3022607},
  abstract = {In this article, we have studied the drain current and transconductance of nMOS fully depleted silicon-on-insulator (FDSOI) transistors operating at low temperature (typically {$<$}; 20 K) when back gate is forward biased. Humps appear in the current, leading to oscillations of the transconductance with gate voltage, owing to mobility discontinuity due to intersubband scattering, in relation with the 2-D subband structure. The conditions for which these specific features appear in thin-film silicon-on-insulator (SOI) devices have been analyzed, by varying the temperature, drain voltage, silicon channel thickness, and gate length.},
  keywords = {Fully depleted silicon-on-insulator (FDSOI),intersubband scattering,Logic gates,Scattering,Silicon,Silicon-on-insulator,Temperature,Temperature measurement,transistor,Transistors}
}

@article{celano2019atomic,
  title = {The {{Atomic Force Microscopy}} for {{Nanoelectronics}}},
  author = {Celano, Umberto},
  year = {2019},
  journal = {Electrical Atomic Force Microscopy for Nanoelectronics},
  pages = {1--28},
  publisher = {{Springer, Cham}},
  doi = {10.1007/978-3-030-15612-1_1},
  abstract = {The invention of scanning tunneling microscopy (STM), rapidly followed by atomic force microscopy (AFM), occurred at the time when extensive research on sub-\textmu m metal oxide field-effect transistors...},
  langid = {english},
  annotation = {00000}
}

@article{chaiken2003structural,
  title = {Structural and Electronic Properties of Amorphous and Polycrystalline {{In}}{\textsubscript{2}}{{Se}}{\textsubscript{3}} Films},
  author = {Chaiken, A. and Nauka, K. and Gibson, G. A. and Lee, Heon and Yang, C. C. and Wu, J. and Ager, J. W. and Yu, K. M. and Walukiewicz, W.},
  year = {2003},
  month = aug,
  journal = {Journal of Applied Physics},
  volume = {94},
  number = {4},
  pages = {2390--2397},
  publisher = {{American Institute of Physics}},
  issn = {0021-8979},
  doi = {10.1063/1.1592631},
  keywords = {conductivity,In2Se3 κ}
}

@article{chandra2007landau,
  title = {A {{Landau Primer}} for {{Ferroelectrics}}},
  author = {Chandra, Premi and Littlewood, Peter B.},
  year = {2007},
  journal = {Physics of Ferroelectrics},
  pages = {69--116},
  publisher = {{Springer, Berlin, Heidelberg}},
  doi = {10.1007/978-3-540-34591-6_3},
  abstract = {This contribution begins with a discussion of the homogeneous Landau theory for bulk ferroelectrics with spatially uniform polarizations, reviewing first- and second-order transitions and the...},
  langid = {english}
}

@article{chang2018synthesis,
  title = {Synthesis of {{Large-Area InSe Monolayers}} by {{Chemical Vapor Deposition}}},
  author = {Chang, Han-Ching and Tu, Chien-Liang and Lin, Kuang-I and Pu, Jiang and Takenobu, Taishi and Hsiao, Chien-Nan and Chen, Chang-Hsiao},
  year = {2018},
  month = sep,
  journal = {Small},
  volume = {14},
  number = {39},
  pages = {1802351},
  publisher = {{John Wiley \& Sons, Ltd}},
  issn = {1613-6810},
  doi = {10.1002/smll.201802351},
  abstract = {Abstract Recently, 2D materials of indium selenide (InSe) layers have attracted much attention from the scientific community due to their high mobility transport and fascinating physical properties. To date, reports on the synthesis of high-quality and scalable InSe atomic films are limited. Here, a synthesis of InSe atomic layers by vapor phase selenization of In2O3 in a chemical vapor deposition (CVD) system, resulting in large-area monolayer flakes or thin films, is reported. The atomic films are continuous and uniform over a large area of 1 ? 1 cm2, comprising of primarily InSe monolayers. Spectroscopic and microscopic measurements reveal the highly crystalline nature of the synthesized InSe monolayers. The ion-gel-gated field-effect transistors based on CVD InSe monolayers exhibit n-type channel behaviors, where the field effect electron mobility values can be up to {$\approx$}30 cm2 V?1 s?1 along with an on/off current ratio, of {$>$}104 at room temperature. In addition, the graphene can serve as a protection layer to prevent the oxidation between InSe and the ambient environment. Meanwhile, the synthesized InSe films can be transferred to arbitrary substrates, enabling the possibility of reassembly of various 2D materials into vertically stacked heterostructures, prompting research efforts to probe its characteristics and applications.},
  keywords = {AFM,Band gap,FET,film,graphene,Heterostructure,InSe ε (2H),ionic gating,mobility,monolayer,n-type,photoluminescence,Raman,Raman peaks,SAED,SEM,TEM,XPS}
}

@article{chen2013conduction,
  title = {The Conduction Mechanism of Large on/off Ferroelectric Diode Currents in Epitaxial (111) {{BiFeO}}{\textsubscript{3}} Thin Film},
  author = {Chen, Zhihui and He, Long and Zhang, Fan and Jiang, Jun and Meng, Jianwei and Zhao, Boyuan and Jiang, Anquan},
  year = {2013},
  month = may,
  journal = {Journal of Applied Physics},
  volume = {113},
  number = {18},
  pages = {184106},
  publisher = {{American Institute of Physics}},
  issn = {0021-8979},
  doi = {10.1063/1.4804144},
  abstract = {The large ferroelectric diode current modulated by bipolar polarization in epitaxial (111) BiFeO3 thin film has been observed. With the survey of different current leakage models, it is found that the space-charge limited current dominates the conduction. For the intrinsic physical understanding, the rectification of diode currents near domain coercive fields is attributed to gradient distribution of the trap charges between top and bottom electrode/ferroelectric interfaces, and the distributed charges can be reversed upon polarization reversal. Moreover, the retention time of the On and Off diode currents is over 104\,s with their ratio of around 5:1.},
  keywords = {BiFeO3,Poole-Frenkel,Schottky}
}

@article{chen2015probing,
  title = {Probing the Electron States and Metal-Insulator Transition Mechanisms in Molybdenum Disulphide Vertical Heterostructures},
  author = {Chen, Xiaolong and Wu, Zefei and Xu, Shuigang and Wang, Lin and Huang, Rui and Han, Yu and Ye, Weiguang and Xiong, Wei and Han, Tianyi and Long, Gen and Wang, Yang and He, Yuheng and Cai, Yuan and Sheng, Ping and Wang, Ning},
  year = {2015},
  month = jan,
  journal = {Nature Communications},
  volume = {6},
  number = {1},
  pages = {6088},
  publisher = {{Nature Publishing Group}},
  issn = {2041-1723},
  doi = {10.1038/ncomms7088},
  abstract = {The metal-insulator transition is one of the remarkable electrical properties of atomically thin molybdenum disulphide. Although the theory of electron\textendash electron interactions has been used in modelling the metal-insulator transition in molybdenum disulphide, the underlying mechanism and detailed transition process still remain largely unexplored. Here we demonstrate that the vertical metal-insulator-semiconductor heterostructures built from atomically thin molybdenum disulphide are ideal capacitor structures for probing the electron states. The vertical configuration offers the added advantage of eliminating the influence of large impedance at the band tails and allows the observation of fully excited electron states near the surface of molybdenum disulphide over a wide excitation frequency and temperature range. By combining capacitance and transport measurements, we have observed a percolation-type metal-insulator transition, driven by density inhomogeneities of electron states, in monolayer and multilayer molybdenum disulphide. In addition, the valence band of thin molybdenum disulphide layers and their intrinsic properties are accessed.},
  langid = {english},
  annotation = {Bandiera\_abtest: a Cg\_type: Nature Research Journals Primary\_atype: Research Subject\_term: Electronic properties and materials;Semiconductors Subject\_term\_id: electronic-properties-and-materials;semiconductors}
}

@article{chen2019phononmediated,
  title = {Phonon-Mediated Superconductivity in Electron-Doped Monolayer {{InSe}}: {{A}} First-Principles Investigation},
  shorttitle = {Phonon-Mediated Superconductivity in Electron-Doped Monolayer {{InSe}}},
  author = {Chen, Jianyong},
  year = {2019},
  month = feb,
  journal = {Journal of Physics and Chemistry of Solids},
  volume = {125},
  pages = {23--30},
  issn = {0022-3697},
  doi = {10.1016/j.jpcs.2018.09.039},
  abstract = {In this study, we investigated the electron\textendash phonon coupling and superconductivity properties of an electron-doped indium selenide (InSe) monolayer for the first time. Electron doping at 0.1 e/cell induced significant phonon softening of the acoustic ZA mode, a lower frequency E{${''}$} mode, and higher frequency A{${'}$}1 mode, which were responsible for the electron\textendash phonon coupling. Under greater doping at 0.2 e/cell, the electronic density of states at the Fermi level increased remarkably and the two Fermi sheets around {$\Gamma$} and M expanded. The transition temperature increased to 3.41 K according to the McMillan\textendash Allen\textendash Dynes formula, which is higher than that of 1.7 K in silicene with doping at 0.44 e/atom and 2.85 K in Na-intercalated MoS2 bilayers calculated using the same method. The phonon-mediated superconductivity predicted in this study combined with the topologically nontrivial characteristics reported previously suggest that few-layer InSe is a potential platform for achieving topologically superconductivity in two dimensions.},
  langid = {english},
  keywords = {DFT,InSe,Superconductivity},
  annotation = {00001}
}

@article{chen2020couplings,
  title = {Couplings of {{Polarization}} with {{Interfacial Deep Trap}} and {{Schottky Interface Controlled Ferroelectric Memristive Switching}}},
  author = {Chen, Aiping and Zhang, Wenrui and Dedon, Liv R. and Chen, Di and Khatkhatay, Fauzia and {MacManus-Driscoll}, Judith L. and Wang, Haiyan and Yarotski, Dmitry and Chen, Jun and Gao, Xingsun and Martin, Lane W. and Roelofs, Andreas and Jia, Quanxi},
  year = {2020},
  month = oct,
  journal = {Advanced Functional Materials},
  volume = {30},
  number = {43},
  pages = {2000664},
  publisher = {{John Wiley \& Sons, Ltd}},
  issn = {1616-301X},
  doi = {10.1002/adfm.202000664},
  abstract = {Abstract Memristors with excellent scalability have the potential to revolutionize not only the field of information storage but also neuromorphic computing. Conventional metal oxides are widely used as resistive switching materials in memristors. Interface-type memristors based on ferroelectric materials are emerging as alternatives in the development of high-performance memory devices. A clear understanding of the switching mechanisms in this type of memristors, however, is still in its early stages. By comparing the bipolar switching in different systems, it is found that the switchable diode effect in ferroelectric memristors is controlled by polarization modulated Schottky barrier height and polarization coupled interfacial deep states trapping/detrapping. Using semiconductor theories with consideration of polarization effects, a phenomenological theory is developed to explain the current?voltage behavior at the metal/ferroelectric interface. These findings reveal the critical role of the interaction among polarization charges, interfacial defects, and Schottky interface in controlling ferroelectric resistive switching and offer the guidance to design ferroelectric memristors with enhanced performance.},
  keywords = {ferroelectrics,memristive switching,metal/oxide interfaces,oxide thin films,semiconductors}
}

@article{chen2020lattice,
  title = {Lattice Vibration Characteristics in Layered {{InSe}} Films and the Electronic Behavior of Field-Effect Transistors},
  author = {Chen, Fangfang and Cui, Anyang and Wang, Xiang and Gao, Caifang and Xu, Liping and Jiang, Kai and Zhang, Jinzhong and Hu, Zhigao and Chu, Junhao},
  year = {2020},
  month = jun,
  journal = {Nanotechnology},
  volume = {31},
  number = {33},
  pages = {335702},
  publisher = {{IOP Publishing}},
  issn = {0957-4484},
  doi = {10.1088/1361-6528/ab8df1},
  abstract = {Understanding how temperature affects the structural and electronic properties for two-dimensional (2D) semiconductors could promote the application and development of nanoelectronic devices. Here, the temperature dependence of lattice structure for indium selenide (InSe) nanosheets and the corresponding electronic properties of 3 nm indium-deposited InSe field-effect transistors (FETs) are systematically demonstrated. Analyses of Raman spectra suggest that the difference of phonon frequency ({$\Delta\omega$}) for the A mode is found to be 3.14 cm-1, which is larger than that of the E mode due to the stronger electron-phonon coupling for the A mode. The device performance based on indium-deposited InSe is systematically explained using Kelvin probe force microscopy (KPFM) and the predicted energy band structure. Furthermore, FETs based on temperature and variable thickness InSe flakes are designed as applicable devices. Our findings are of fundamental importance to explain the underlying physics in intrinsic InSe transistors and improve further applications.},
  langid = {english},
  keywords = {FET,flakes,InSe ε (2H),mobility,mobility-temperature,Raman,Raman peaks,Raman temperature}
}

@article{chen2021atomic,
  title = {Atomic {{Imaging}} of {{Electrically Switchable Striped Domains}} in {$\beta$}'-{{In}}{\textsubscript{2}}{{Se}}{\textsubscript{3}}},
  author = {Chen, Zhi and Fu, Wei and Wang, Lin and Yu, Wei and Li, Haohan and Tan, Clement Kok Yong and Abdelwahab, Ibrahim and Shao, Yan and Su, Chenliang and Sun, Mingzi and Huang, Bolong and Loh, Kian Ping},
  year = {2021},
  month = jul,
  journal = {Advanced Science},
  volume = {n/a},
  number = {n/a},
  pages = {2100713},
  publisher = {{John Wiley \& Sons, Ltd}},
  issn = {2198-3844},
  doi = {10.1002/advs.202100713},
  abstract = {Abstract 2D ferroelectricity in van-der-Waals-stacked materials such as indium selenide (In2Se3) has attracted interests because the ferroelectricity is robust even in ultrathin layers, which is useful for the miniaturization of ferroelectric field effect transistors. To implement In2Se3 in nanoscale ferroelectric devices, an understanding of the domain structure and switching dynamics in the 2D limit is essential. In this study, a biased scanning tunnelling microscopy (STM) tip is used to locally switch polarized domains in ??-In2Se3, and the reconfiguration of these domains are directly visualized using STM. The room-temperature surface of ??-In2Se3 breaks into 1D nanostriped domains, which changes into a zig-zag striped domains of ?? phase at low temperatures. These two types of domains can coexist, and by applying a tip-sample bias, they can be interchangeably switched locally, showing volatile or nonvolatile like behavior depending on the threshold voltage applied. An atomic model is proposed to explain the switching mechanism based on tip-induced flexoelectric effect and the ferroelastic switching between ?? and ?? phases.},
  keywords = {antiferroelectrics,ferroelectric,In2Se3 β',phase transition,phase transition β' temperature,STM}
}

@article{cheng2018highperformance,
  title = {High-Performance, Multifunctional Devices Based on Asymmetric van Der {{Waals}} Heterostructures},
  author = {Cheng, Ruiqing and Wang, Feng and Yin, Lei and Wang, Zhenxing and Wen, Yao and Shifa, Tofik Ahmed and He, Jun},
  year = {2018},
  month = jun,
  journal = {Nature Electronics},
  volume = {1},
  number = {6},
  pages = {356--361},
  publisher = {{Nature Publishing Group}},
  issn = {2520-1131},
  doi = {10.1038/s41928-018-0086-0},
  abstract = {Two-dimensional materials are of interest for the development of electronic devices due to their useful properties and compatibility with silicon-based technology. Van der Waals heterostructures, in which two-dimensional materials are stacked on top of each other, allow different materials and properties to be combined and for multifunctional devices to be created. Here we show that an asymmetric van der Waals heterostructure device, which is composed of graphene, hexagonal boron nitride, molybdenum disulfide and molybdenum ditelluride, can function as a high-performance diode, transistor, photodetector and programmable rectifier. Due to the asymmetric structure of the device, charge-carrier injection can be switched between tunnelling and thermal activation under negative and positive bias conditions, respectively. As a result, the device exhibits a high current on/off ratio of 6\,\texttimes\,108 and a rectifying ratio of \textasciitilde 108. The device can also function as a programmable rectifier with stable retention and continuously tunable memory states, as well as a high program/erase current ratio of \textasciitilde 109 and a rectification ratio of \textasciitilde 107.},
  copyright = {2018 The Author(s)},
  langid = {english},
  annotation = {Bandiera\_abtest: a Cg\_type: Nature Research Journals Primary\_atype: Research Subject\_term: Electronic devices;Electronic properties and materials;Two-dimensional materials Subject\_term\_id: electronic-devices;electronic-properties-and-materials;two-dimensional-materials}
}

@article{choi2008plasma,
  title = {Plasma Etching of {{As}}{\textsubscript{2}}{{S}}{\textsubscript{3}} Films for Optical Waveguides},
  author = {Choi, Duk-Yong and Maden, Steve and Rode, Andrei and Wang, Rongping and {Luther-Davies}, Barry},
  year = {2008},
  month = jun,
  journal = {Journal of Non-Crystalline Solids},
  volume = {354},
  number = {27},
  pages = {3179--3183},
  issn = {0022-3093},
  doi = {10.1016/j.jnoncrysol.2008.01.014},
  abstract = {Chalcogenide glasses are good candidate materials for ultra-fast non-linear optic devices. In this work, we present the photolithographic process and the plasma etching of arsenic tri-sulphide (As2S3) film. The films were deposited on thermally oxidized silicon substrates by ultra-fast pulsed laser deposition. To protect As2S3 film from photo-resist developer, thin resist layer {$\sim$}100\textendash 200nm was remained on the UV exposed area by controlling resist development time. After removing the protective layer in oxygen plasma, As2S3 waveguides were patterned in inductively coupled plasma reactive ion etching (ICP-RIE) system using CF4\textendash O2 gas mixture. We investigated the etch rate and the etch selectivity to photo-resist of As2S3 as a function of bias power, induction power, operating pressure, and gas flow rate ratio of CF4 and O2. The film is mainly etched by the chemical reaction with fluorine radicals. The content of oxygen in the plasma determines the etched sidewall profiles and nearly vertical profile was obtained at high oxygen content plasma.},
  keywords = {Chalcogenides,Laser deposition,Planar waveguides,Processing},
  annotation = {ZSCC: 0000040}
}

@article{choi2008protective,
  title = {A Protective Layer on {{As}}{\textsubscript{2}}{{S}}{\textsubscript{3}} Film for Photo-Resist Patterning},
  author = {Choi, D.-Y. and Madden, S. and Rode, A. and Wang, R. and Bulla, D. and {Luther-Davies}, B.},
  year = {2008},
  journal = {Journal of Non-Crystalline Solids},
  volume = {354},
  number = {47-51},
  pages = {5253--5254},
  doi = {10.1016/j.jnoncrysol.2008.05.067},
  abstract = {We have developed an effective fabrication process for As2S3 planar waveguides. A bottom anti-reflection coating provides a layer that not only protects the As2S3 film from attack by the alkaline developer but also improves line edge roughness of photo-resist patterns which is a pre-requisite for waveguides with smooth sidewalls. Crown Copyright \textcopyright{} 2008.},
  keywords = {Chalcogenides,Chemical durability,Planar waveguides,Processing,Vapor phase deposition},
  annotation = {ZSCC: 0000015}
}

@article{choi2011su8,
  title = {{{SU-8}} Protective Layer in Photo-Resist Patterning on {{As}}{\textsubscript{2}}{{S}}{\textsubscript{3}} Film},
  author = {Choi, Duk-Yong and Madden, Steve and Bulla, Douglas and Rode, Andrei and Wang, Rongping and Luther-Davies, Barry},
  year = {2011},
  journal = {physica status solidi c},
  volume = {8},
  number = {11-12},
  pages = {3183--3186},
  issn = {1610-1642},
  doi = {10.1002/pssc.201000741},
  abstract = {Amorphous chalcogenide thin films, especially arsenic tri-sulphide (As2S3) are emerging as an excellent platform for integrated non-linear optic devices due to their high non-linearity as well as low linear and nonlinear optical loss. Fabricating planar As2S3 waveguides, however, is not straightforward because As2S3 is dissolved in alkalis such as photo-resist developer. In this study we present the application of thin SU-8 film as a protective layer to prevent the attack of the developer on the As2S3 during photolithographic process. Despite excellent coating feature and simple process of SU-8 as a protective layer, the delamination between SU-8 and polymer cladding during chip cleaving hindered its application. We deposited thin Al2O3 on SU-8 by atomic layer deposition and this intermediate layer could solve the problem. We measured the insertion losses of fabricated waveguides as a function of device lengths and widths. The propagation loss becomes significant in a narrow guide due to the enhanced surface scattering. It was clear that extra losses were engaged in long guides containing bending structures. SU-8 layer and thin Al2O3 combination allowed reliable and repeatable fabrication process in that it did not induce any extra light scattering or absorption and prevented attack of the As2S3 film by the alkaline developer. Moreover, the device characterisation revealed that SU-8 layer is superior to PMMA/BARC in terms of propagation loss of waveguide (\textcopyright{} 2011 WILEY-VCH Verlag GmbH \& Co. KGaA, Weinheim)},
  copyright = {Copyright \textcopyright{} 2011 WILEY-VCH Verlag GmbH \& Co. KGaA, Weinheim},
  langid = {english},
  keywords = {As2S3,chalcogenide glass,Chalcogenide glass,SU-8 protective layer,waveguides,Waveguides},
  annotation = {ZSCC: 0000011}
}

@article{choi2017electrically,
  title = {Electrically {{Driven Reversible Phase Changes}} in {{Layered In}}{\textsubscript{2}}{{Se}}{\textsubscript{3}} {{Crystalline Film}}},
  author = {Choi, Min Sup and Cheong, Byung-ki and Ra, Chang Ho and Lee, Suyoun and Bae, Jee-Hwan and Lee, Sungwoo and Lee, Gun-Do and Yang, Cheol-Woong and Hone, James and Yoo, Won Jong},
  year = {2017},
  month = nov,
  journal = {Advanced Materials},
  volume = {29},
  number = {42},
  pages = {1703568},
  publisher = {{John Wiley \& Sons, Ltd}},
  issn = {0935-9648},
  doi = {10/ggpmfj},
  abstract = {Abstract An unconventional phase-change memory (PCM) made of In2Se3, which utilizes reversible phase changes between a low-resistance crystalline ? phase and a high-resistance crystalline ? phase is reported for the first time. Using a PCM with a layered crystalline film exfoliated from In2Se3 crystals on a graphene bottom electrode, it is shown that SET/RESET programmed states form via the formation/annihilation of periodic van der Waals' (vdW) gaps (i.e., virtual vacancy layers) in the stack of atomic layers and the concurrent reconfiguration of In and Se atoms across the layers. From density functional theory calculations, ? and ? phases, characterized by octahedral bonding with vdW gaps and tetrahedral bonding without vdW gaps, respectively, are shown to have energy bandgap value of 0.78 and 1.86 eV, consistent with a metal-to-insulator transition accompanying the ?-to-? phase change. The monolithic In2Se3 layered film reported here provides a novel means to achieving a PCM based on melting-free, low-entropy phase changes in contrast with the GeTe?Sb2Te3 superlattice film adopted in interfacial phase-change memory.},
  keywords = {device,In2Se3 α (3R),In2Se3 β,In2Se3 γ,indium selenides,layered materials,metal-to-insulator transition,phase transition,phase transition β-γ,SAED,STEM,vacancy layers},
  annotation = {00028  ZSCC: 0000028}
}

@article{choi2020multiterminal,
  title = {Multiterminal {{Transport Measurements}} of {{Multilayer InSe Encapsulated}} by {{hBN}}},
  author = {Choi, YiTaek and Seok, Yongwook and Jang, Hanbyeol and Kumar, Arvind Shankar and Watanabe, Kenji and Taniguchi, Takashi and Gao, Xuan P. A. and Lee, Kayoung},
  year = {2020},
  month = dec,
  journal = {ACS Applied Electronic Materials},
  pages = {acsaelm.0c00771},
  issn = {2637-6113, 2637-6113},
  doi = {10.1021/acsaelm.0c00771},
  abstract = {We investigate transport properties and scattering mechanisms of high-mobility InSe nanosheets, encapsulated by hBN, via four-terminal measurements. The measured conductivities increase as temperature (T) decreases, showing a metallic behavior at gate voltages above a threshold voltage, in contrast to the metal-insulator transition occurring at a high gate voltage observed in the two-terminal conductance of InSe. Phonon-limited and impurity-limited mobilities were separated for each carrier density (n) and T. Extracted impurity-limited mobility values are weakly dependent on n due to dominant short-range scatterers, while phonon-limited mobility values decrease as n increases due to second subband occupation and increased electron-phonon scattering.},
  langid = {english},
  keywords = {Carrier density,flake,Heterostructure,InSe,mobility,Raman,Raman peaks,Resistivity/conductivity,Resistivity/conductivity-temperature,variable range hopping},
  annotation = {00000  ZSCC: 0000000}
}

@article{church2018effect,
  title = {Effect of Stacking Faults on the Photoluminescence Spectrum of Zincblende           {{GaN}}},
  author = {Church, S. A. and Hammersley, S. and Mitchell, P. W. and Kappers, M. J. and Lee, L. Y. and Massabuau, F. and Sahonta, S. L. and Frentrup, M. and Shaw, L. J. and Wallis, D. J. and Humphreys, C. J. and Oliver, R. A. and Binks, D. J. and Dawson, P.},
  year = {2018},
  month = may,
  journal = {Journal of Applied Physics},
  volume = {123},
  number = {18},
  pages = {185705},
  publisher = {{American Institute of Physics}},
  issn = {0021-8979},
  doi = {10.1063/1.5026267},
  abstract = {The photoluminescence spectra of a zincblende GaN epilayer grown via metal-organic chemical vapour deposition upon 3C-SiC/Si (001) substrates were investigated. Of particular interest was a broad emission band centered at 3.4\,eV, with a FWHM of 200\,meV, which extends above the bandgap of both zincblende and wurtzite GaN. Photoluminescence excitation measurements show that this band is associated with an absorption edge centered at 3.6\,eV. Photoluminescence time decays for the band are monoexponential, with lifetimes that reduce from 0.67\,ns to 0.15\,ns as the recombination energy increases. TEM measurements show no evidence of wurtzite GaN inclusions which are typically used to explain emission in this energy range. However, dense stacking fault bunches are present in the epilayers. A model for the band alignment at the stacking faults was developed to explain this emission band, showing how both electrons and holes can be confined adjacent to stacking faults. Different stacking fault separations can change the carrier confinement energies sufficiently to explain the width of the emission band, and change the carrier wavefunction overlap to account for the variation in decay time.}
}

@article{collins2019quantitative,
  title = {Quantitative {{Electromechanical Atomic Force Microscopy}}},
  author = {Collins, Liam and Liu, Yongtao and Ovchinnikova, Olga S. and Proksch, Roger},
  year = {2019},
  month = jul,
  journal = {ACS Nano},
  volume = {13},
  number = {7},
  pages = {8055--8066},
  publisher = {{American Chemical Society}},
  issn = {1936-0851},
  doi = {10.1021/acsnano.9b02883},
  abstract = {The ability to probe a material's electromechanical functionality on the nanoscale is critical to applications from energy storage and computing to biology and medicine. Voltage-modulated atomic force microscopy (VM-AFM) has become a mainstay characterization tool for investigating these materials due to its ability to locally probe electromechanically responsive materials with spatial resolution from micrometers to nanometers. However, with the wide popularity of VM-AFM techniques such as piezoresponse force microscopy and electrochemical strain microscopy there has been a rise in reports of nanoscale electromechanical functionality, including hysteresis, in materials that should be incapable of exhibiting piezo- or ferroelectricity. Explanations for the origins of unexpected nanoscale phenomena have included new material properties, surface-mediated polarization changes, and/or spatially resolved behavior that is not present in bulk measurements. At the same time, it is well known that VM-AFM measurements are susceptible to numerous forms of crosstalk, and, despite efforts within the AFM community, a global approach for eliminating this has remained elusive. In this work, we develop a method for easily demonstrating the presence of hysteretic (i.e., ``false ferroelectric'') long-range interactions between the sample and cantilever body. This method should be easy to implement in any VM-AFM measurement. We then go on to demonstrate fully quantitative and repeatable nanoelectromechanical characterization using an interferometer. These quantitative measurements are critical for a wide range of devices including MEMS actuators and sensors, memristor, energy storage, and memory.},
  annotation = {00040}
}

@article{collins2020electronic,
  title = {Electronic {{Band Structure}} of {{In-Plane Ferroelectric}} van Der {{Waals}} {$\beta$}'-{{In}}{\textsubscript{2}}{{Se}}{\textsubscript{3}}},
  author = {Collins, James L. and Wang, Chutian and Tadich, Anton and Yin, Yuefeng and Zheng, Changxi and Hellerstedt, Jack and {Grubi{\v s}i{\'c}-{\v C}abo}, Antonija and Tang, Shujie and Mo, Sung-Kwan and Riley, John and Huwald, Eric and Medhekar, Nikhil V. and Fuhrer, Michael S. and Edmonds, Mark T.},
  year = {2020},
  month = jan,
  journal = {ACS Applied Electronic Materials},
  volume = {2},
  number = {1},
  pages = {213--219},
  publisher = {{American Chemical Society}},
  doi = {10.1021/acsaelm.9b00699},
  abstract = {Layered indium selenides (In2Se3) have recently been discovered to host robust out-of-plane and in-plane ferroelectricity in the {$\alpha$}- and {$\beta{'}$}-phases, respectively. In this work, we utilize angle-resolved photoelectron spectroscopy to directly measure the electronic band structure of {$\beta{'}$}-In2Se3 and compare to hybrid density functional theory (DFT) calculations. In agreement with DFT, we find the band structure is highly two-dimensional, with negligible dispersion along the c-axis. Because of n-type doping we can observe the conduction band minima and directly measure the minimum indirect (0.97 eV) and direct (1.46 eV) bandgaps. We find the Fermi surface in the conduction band is characterized by anisotropic electron pockets with sharp in-plane dispersion about the {$\overline M$} points, yielding effective masses of 0.21m0 along KM and 0.33m0 along {$\Gamma$}M. The measured band structure is well supported by hybrid density functional theory calculations. The highly two-dimensional (2D) band structure with moderate bandgap and small effective mass suggests that {$\beta{'}$}-In2Se3 is a potentially useful van der Waals semiconductor. This, together with its ferroelectricity makes it a viable material for high-mobility ferroelectric\textendash photovoltaic devices, with applications in nonvolatile memory switching and renewable energy technologies.},
  keywords = {ARPES,Band gap,band structure,ferroelectric,In2Se3 β',phase transition β' temperature},
  annotation = {00000  ZSCC: 0000000}
}

@article{cui2018intercorrelated,
  title = {Intercorrelated {{In-Plane}} and {{Out-of-Plane Ferroelectricity}} in {{Ultrathin Two-Dimensional Layered Semiconductor In}}{\textsubscript{2}}{{Se}}{\textsubscript{3}}},
  author = {Cui, Chaojie and Hu, Wei-Jin and Yan, Xingxu and Addiego, Christopher and Gao, Wenpei and Wang, Yao and Wang, Zhe and Li, Linze and Cheng, Yingchun and Li, Peng and Zhang, Xixiang and Alshareef, Husam N. and Wu, Tom and Zhu, Wenguang and Pan, Xiaoqing and Li, Lain-Jong},
  year = {2018},
  month = feb,
  journal = {Nano Letters},
  volume = {18},
  number = {2},
  pages = {1253--1258},
  publisher = {{American Chemical Society}},
  issn = {1530-6984},
  doi = {10.1021/acs.nanolett.7b04852},
  abstract = {Enriching the functionality of ferroelectric materials with visible-light sensitivity and multiaxial switching capability would open up new opportunities for their applications in advanced information storage with diverse signal manipulation functions. We report experimental observations of robust intralayer ferroelectricity in two-dimensional (2D) van der Waals layered {$\alpha$}-In2Se3 ultrathin flakes at room temperature. Distinct from other 2D and conventional ferroelectrics, In2Se3 exhibits intrinsically intercorrelated out-of-plane and in-plane polarization, where the reversal of the out-of-plane polarization by a vertical electric field also induces the rotation of the in-plane polarization. On the basis of the in-plane switchable diode effect and the narrow bandgap ({$\sim$}1.3 eV) of ferroelectric In2Se3, a prototypical nonvolatile memory device, which can be manipulated both by electric field and visible light illumination, is demonstrated for advancing data storage technologies.},
  keywords = {device,ferroelectric,In2Se3 α (3R),In2Se3 β,InSe γ (3R),PFM,Raman,SAED,STEM,Switching/FTJ,TEM},
  annotation = {00166  ZSCC: 0000166  146 citations (Crossref) [2021-02-02]}
}

@article{dai2019robust,
  title = {Robust {{Piezo-Phototronic Effect}} in {{Multilayer}} {$\gamma$}-{{InSe}} for {{High-Performance Self-Powered Flexible Photodetectors}}},
  author = {Dai, Mingjin and Chen, Hongyu and Wang, Fakun and Hu, Yunxia and Wei, Shuai and Zhang, Jia and Wang, Zhiguo and Zhai, Tianyou and Hu, PingAn},
  year = {2019},
  month = jun,
  journal = {ACS Nano},
  volume = {13},
  number = {6},
  pages = {7291--7299},
  publisher = {{American Chemical Society}},
  issn = {1936-0851},
  doi = {10.1021/acsnano.9b03278},
  abstract = {The piezo-phototronic effect has been promising as an effective means to improve the performance of two-dimensional (2D) semiconductor based optoelectronic devices. However, the current reported monolayer 2D semiconductors are not regarded as suitable for actual flexible piezotronic photodetectors due to their insufficient optical absorption and mechanical durability, although they possess strong piezoelectricity. In this work, we demonstrate that, unlike 2H-phase transition-metal dichalcogenides, {$\gamma$}-phase InSe with a hexagonal unit cell possesses broken inversion symmetry in all the layer numbers and has a strong second-harmonic generation effect. Moreover, driven by the piezo-phototronic effect, a flexible self-powered photodetector based on multilayer {$\gamma$}-InSe, which can work without any energy supply, is proposed. The device exhibited ultrahigh photon responsivity of 824 mA/W under light illuminations of 400 nm (0.368 mW/cm2). Moreover, the responsivity and response speed of this photodetector were enhanced further by as much as 696\% and 1010\%, respectively, when a 0.62\% uniaxial tensile strain was applied. Our devices exhibit high reliability and stability during a 6 month test time. These significant findings offer a promising pathway to construct high-performance flexible piezo-phototronic photodetectors based on multilayer 2D semiconductors.},
  keywords = {device,flake,InSe β (2H),InSe γ (3R),photo-transport,Piezoelectric,Raman,second harmonic generation,TEM}
}

@article{dai2019twodimensional,
  title = {Two-{{Dimensional}} van Der {{Waals Materials}} with {{Aligned In-Plane Polarization}} and {{Large Piezoelectric Effect}} for {{Self-Powered Piezoelectric Sensors}}},
  author = {Dai, Mingjin and Wang, Zhiguo and Wang, Fakun and Qiu, Yunfeng and Zhang, Jia and Xu, Cheng-Yan and Zhai, Tianyou and Cao, Wenwu and Fu, Yongqing and Jia, Dechang and Zhou, Yu and Hu, Ping-An},
  year = {2019},
  month = aug,
  journal = {Nano Letters},
  volume = {19},
  number = {8},
  pages = {5410--5416},
  publisher = {{American Chemical Society}},
  issn = {1530-6984},
  doi = {10.1021/acs.nanolett.9b01907},
  abstract = {Piezoelectric two-dimensional (2D) van der Waals (vdWs) materials are highly desirable for applications in miniaturized and flexible/wearable devices. However, the reverse-polarization between adjacent layers in current 2D layered materials results in decreasing their in-plane piezoelectric coefficients with layer number, which limits their practical applications. Here, we report a class of 2D layered materials with an identical orientation of in-plane polarization. Their piezoelectric coefficients (e22) increase with layer number, thereby allowing for the fabrication of flexible piezotronic devices with large piezoelectric responsivity and excellent mechanical durability. The piezoelectric outputs can reach up to 0.363 V for a 7-layer {$\alpha$}-In2Se3 device, with a current responsivity of 598.1 pA for 1\% strain, which is 1 order of magnitude higher than the values of the reported 2D piezoelectrics. The self-powered piezoelectric sensors made of these newly developed 2D layered materials have been successfully used for real-time health monitoring, proving their suitability for the fabrication of flexible piezotronic devices due to their large piezoelectric responses and excellent mechanical durability.},
  keywords = {DFT,InSe γ (3R),Piezoelectric,Raman,second harmonic generation},
  annotation = {ZSCC: NoCitationData[s0]}
}

@book{dai2020ferroic,
  title = {Ferroic {{Materials}} for {{Smart Systems}}},
  author = {Dai, Jiyan},
  year = {2020},
  month = jan,
  publisher = {{John Wiley \& Sons, Ltd}},
  doi = {10.1002/9783527815388},
  isbn = {978-3-527-34476-5},
  langid = {english},
  annotation = {00000}
}

@article{dai2020intrinsic,
  title = {Intrinsic {{Dipole Coupling}} in {{2D}} van Der {{Waals Ferroelectrics}} for {{Gate-Controlled Switchable Rectifier}}},
  author = {Dai, Mingjin and Li, Kai and Wang, Fakun and Hu, Yunxia and Zhang, Jia and Zhai, Tianyou and Yang, Bin and Fu, Yongqing and Cao, Wenwu and Jia, Dechang and Zhou, Yu and Hu, PingAn},
  year = {2020},
  month = feb,
  journal = {Advanced Electronic Materials},
  volume = {6},
  number = {2},
  pages = {1900975},
  publisher = {{John Wiley \& Sons, Ltd}},
  issn = {2199-160X},
  doi = {10.1002/aelm.201900975},
  abstract = {Abstract Miniaturization of device elements, such as ferroelectric diodes, depends on the downscaling of ferroelectric film, which is also crucial for developing high-density information storage technologies of ferroelectric random access memories (FeRAMs). Recently emerged ferroelectric two-dimensional (2D) van der Waals (vdWs) layered materials bring an additional opportunity to further increase the density of FeRAMs. A lateral, switchable rectifier is designed and fabricated based on atomically thin 2D {$\alpha$}-In2Se3 ferroelectric diodes, thus breaking the thickness limitation of conventional ferroelectric films and achieving an unprecedented level of miniaturization. This is realized through the interrelated coupling between out-of-plane and in-plane dipoles at room temperature; that is, horizontal polarization reversal can be effectively controlled through a vertical electric field. Being further explored as a switchable rectifier, the obtained maximum value of rectification ratio for the {$\alpha$}-In2Se3 based ferroelectric diode can reach up to 2.5 ? 103. These results indicate that 2D ferroelectric semiconductors can offer a pathway to develop next-generation multifunctional electronics.},
  keywords = {device,ferroelectric,In2Se3 α (3R),PFM,rectifying junction,second harmonic generation},
  annotation = {00000}
}

@article{darwish2013structural,
  title = {Structural and Electrical Studies on Nanostructured {{InSe}} Thin Films},
  author = {Darwish, A. A. A. and {El-Nahass}, M. M. and Bahlol, M. H.},
  year = {2013},
  month = jul,
  journal = {Applied Surface Science},
  volume = {276},
  pages = {210--216},
  issn = {0169-4332},
  doi = {10.1016/j.apsusc.2013.03.068},
  abstract = {InSe powder was found to be polycrystalline with hexagonal system. X-ray diffraction and scanning electron microscopy results confirmed that the InSe films have nanostructure nature. The heat treatment enhance the crystallite size. The dark electrical conductivity of InSe films showed that the dominant conduction is through the extended states in the temperature range 293\textendash 473K. Thermoelectric properties show a negative sign exhibiting n-type semiconductig nature of films. Current density\textendash voltage characteristics of InSe films showed Ohmic conduction in the lower voltage range, and space charge limited conductivity (SCLC) in the relatively high-voltage range. The SCLC was controlled by an exponential distribution of traps below the conduction band. The temperature dependence of the current density allowed the calculation of some essential parameters.},
  langid = {english},
  keywords = {Annealing,device,film,InSe,mobility,n-type,Resistivity/conductivity,SCLC,SEM,XRD}
}

@article{dassarma2005twodimensional,
  title = {Two-{{Dimensional Metal-Insulator Transition}} as a {{Percolation Transition}} in a {{High-Mobility Electron System}}},
  author = {Das Sarma, S. and Lilly, M. P. and Hwang, E. H. and Pfeiffer, L. N. and West, K. W. and Reno, J. L.},
  year = {2005},
  month = apr,
  journal = {Physical Review Letters},
  volume = {94},
  number = {13},
  pages = {136401},
  publisher = {{American Physical Society}},
  doi = {10.1103/PhysRevLett.94.136401},
  abstract = {By carefully analyzing the low temperature density dependence of 2D conductivity in undoped high-mobility n-GaAs heterostructures, we conclude that the 2D metal-insulator transition in this 2D electron system is a density inhomogeneity driven percolation transition due to the breakdown of screening in the random charged impurity disorder background. In particular, our measured conductivity exponent of {$\sim$}1.4 approaches the 2D percolation exponent value of 4/3 at low temperatures and our experimental data are inconsistent with there being a zero-temperature quantum critical point in our system.}
}

@article{datye2018reduction,
  title = {Reduction of Hysteresis in {{MoS}}{\textsubscript{2}} Transistors Using Pulsed Voltage Measurements},
  author = {Datye, Isha M. and Gabourie, Alexander J. and English, Chris D. and Smithe, Kirby K. H. and McClellan, Connor J. and Wang, Ning C. and Pop, Eric},
  year = {2018},
  month = oct,
  journal = {2D Materials},
  volume = {6},
  number = {1},
  pages = {011004},
  publisher = {{IOP Publishing}},
  issn = {2053-1583},
  doi = {10.1088/2053-1583/aae6a1},
  abstract = {Transistors based on two-dimensional (2D) materials often exhibit hysteresis in their electrical measurements, i.e. a dependence of measured current on voltage sweep direction due to charge trapping. Here we demonstrate a simple pulsed measurement technique which reduces this hysteretic behavior, enabling more accurate characterization of 2D transistors. We compare hysteresis and charge trapping in four types of devices fabricated from both exfoliated and synthetic MoS2, with SiO2 and HfO2 insulators, using DC and pulsed voltage measurements at different temperatures. Applying modest voltage pulses ( 1 ms) on the gate significantly reduces charge trapping and results in the elimination of over 80\% of hysteresis for all devices. At shorter pulse widths ( 1 \textmu s), up to 99\% of hysteresis is reduced for some devices. Our measurements enable the extraction of a unique value of field-effect mobility, regardless of voltage sweep direction, unlike measurements that rely on forward or backward DC measurements. This simple and reproducible technique is useful for studying the intrinsic properties of 2D transistors, and can be similarly applied to other nanoscale and emerging devices where charge trapping is of concern.},
  langid = {english},
  annotation = {00000}
}

@article{de2021femtometer,
  title = {Femtometer Atomic Displacement, the Root Cause for Multiferroic Behavior of {{CuO}} Unearthed through Polarized {{Raman}} Spectroscopy},
  author = {De, Binoy Krishna and Dwij, Vivek and Misawa, R. and Kimura, T. and Sathe, V. G.},
  year = {2021},
  month = jan,
  journal = {Journal of Physics: Condensed Matter},
  volume = {33},
  number = {12},
  pages = {12LT01},
  publisher = {{IOP Publishing}},
  issn = {0953-8984},
  doi = {10.1088/1361-648X/abd738},
  abstract = {Recently, CuO has been proposed as a potential multiferroic material with high transition temperature. Competing models based on spin current and ionic displacements are invoked to explain ferroelectricity in CuO. The theoretical model based on ionic displacement predicted very small displacement ({$\sim$}10-5 \AA ) along the b axis. Experimentally detecting displacements of such a small amplitude in a particular direction is extremely challenging. Through our detailed angle resolved polarized Raman spectroscopy study on single crystal of CuO, we have validated the theoretical study and provided direct evidence of displacement along the b axis. Our study provides important contribution in the high temperature multiferroic compounds and showed for the first time, the use of the polarized Raman scattering in detecting ionic displacements at the femtometer scale.},
  langid = {english}
}

@article{debbichi2015twodimensional,
  title = {Two-{{Dimensional Indium Selenides Compounds}}: {{An Ab Initio Study}}},
  shorttitle = {Two-{{Dimensional Indium Selenides Compounds}}},
  author = {Debbichi, L. and Eriksson, O. and Leb{\`e}gue, S.},
  year = {2015},
  month = aug,
  journal = {The Journal of Physical Chemistry Letters},
  volume = {6},
  number = {15},
  pages = {3098--3103},
  issn = {1948-7185},
  doi = {10.1021/acs.jpclett.5b01356},
  abstract = {We use first-principle calculations to investigate the electronic structure of InSe and In2Se3. The interlayer binding energy is found to be in the same range as for other 2D systems, and the monolayers are found to be dynamically stable, which suggest the possibility to obtain them as isolated layers. The GW approximation including spin\textendash orbit is used to obtain the bandgaps, which are in the range relevant for application in electronics. Also, it is shown that an electric field perpendicular to the layers can induce a semiconductor to metal transition in this family of compounds.},
  keywords = {band structure,computation,DFT,DOS,In2Se3 α (R3mh),In2Se3 β (R3¯mh)},
  annotation = {ZSCC: 0000120}
}

@article{deckoff-jones2016observing,
  title = {Observing the Interplay between Surface and Bulk Optical Nonlinearities in Thin van Der {{Waals}} Crystals},
  author = {{Deckoff-Jones}, Skylar and Zhang, Jingjing and Petoukhoff, Christopher E. and Man, Michael K. L. and Lei, Sidong and Vajtai, Robert and Ajayan, Pulickel M. and Talbayev, Diyar and Mad{\'e}o, Julien and Dani, Keshav M.},
  year = {2016},
  month = mar,
  journal = {Scientific Reports},
  volume = {6},
  number = {1},
  pages = {22620},
  publisher = {{Nature Publishing Group}},
  issn = {2045-2322},
  doi = {10.1038/srep22620},
  abstract = {Van der Waals materials, existing in a range of thicknesses from monolayer to bulk, allow for interplay between surface and bulk nonlinearities, which otherwise dominate only at atomically-thin or bulk extremes, respectively. Here, we observe an unexpected peak in intensity of the generated second harmonic signal versus the thickness of Indium Selenide crystals, in contrast to the quadratic increase expected from thin crystals. We explain this by interference effects between surface and bulk nonlinearities, which offer a new handle on engineering the nonlinear optical response of 2D materials and their heterostructures.},
  copyright = {2016 The Author(s)},
  langid = {english},
  keywords = {InSe γ (3R),second harmonic generation},
  annotation = {00021}
}

@article{denev2011probing,
  title = {Probing {{Ferroelectrics Using Optical Second Harmonic Generation}}},
  author = {Denev, Sava A. and Lummen, Tom T. A. and Barnes, Eftihia and Kumar, Amit and Gopalan, Venkatraman},
  year = {2011},
  month = sep,
  journal = {Journal of the American Ceramic Society},
  volume = {94},
  number = {9},
  pages = {2699--2727},
  publisher = {{John Wiley \& Sons, Ltd}},
  issn = {0002-7820},
  doi = {10.1111/j.1551-2916.2011.04740.x},
  abstract = {Nonlinear optics is an essential component of modern laser systems and optoelectronic devices. It has also emerged as an important tool in probing the electronic, vibrational, magnetic, and crystallographic structure of materials ranging from oxides and metals, to polymers and biological samples. This review focuses on the specific technique of optical second harmonic generation (SHG), and its application in probing ferroelectric complex oxide crystals and thin films. As the dominant SHG interaction mechanism exists only in materials that lack inversion symmetry, SHG is a sensitive probe of broken inversion symmetry, and thus also of bulk polar phenomena in materials. By performing in-situ SHG polarimetry experiments in different experimental conditions such as sample orientation, applied electric field, and temperature, one can probe ferroelectric hysteresis loops and phase transitions. Careful modeling of the polarimetry data allows for the determination of the point group symmetry of the crystal. In epitaxial thin films with a two-dimensional arrangement of well-defined domain orientations, one can extract information about intrinsic material properties such as nonlinear coefficients, as well as microstructural information such as the local statistics of the different domain variants being probed. This review presents several detailed examples of ferroelectric systems where such measurements and modeling are performed. The use of SHG microscopic imaging is discussed, and its ability to reveal domain structures and phases not normally visible with linear optics is illustrated.},
  keywords = {review article}
}

@article{deuermeier2016highly,
  title = {Highly Conductive Grain Boundaries in Copper Oxide Thin Films},
  author = {Deuermeier, Jonas and Wardenga, Hans F. and Morasch, Jan and Siol, Sebastian and Nandy, Suman and Calmeiro, Tom{\'a}s and Martins, Rodrigo and Klein, Andreas and Fortunato, Elvira},
  year = {2016},
  month = jun,
  journal = {Journal of Applied Physics},
  volume = {119},
  number = {23},
  pages = {235303},
  publisher = {{American Institute of Physics}},
  issn = {0021-8979},
  doi = {10.1063/1.4954002},
  abstract = {High conductivity in the off-state and low field-effect mobility compared to bulk properties is widely observed in the p-type thin-film transistors of Cu2O, especially when processed at moderate temperature. This work presents results from in situ conductance measurements at thicknesses from sub-nm to around 250\,nm with parallel X-ray photoelectron spectroscopy. An enhanced conductivity at low thickness is explained by the occurrence of Cu(II), which is segregated in the grain boundary and locally causes a conductivity similar to CuO, although the surface of the thick film has Cu2O stoichiometry. Since grains grow with an increasing film thickness, the effect of an apparent oxygen excess is most pronounced in vicinity to the substrate interface. Electrical properties of Cu2O grains are at least partially short-circuited by this effect. The study focuses on properties inherent to copper oxide, although interface effects cannot be ruled out. This non-destructive, bottom-up analysis reveals phenomena which are commonly not observable after device fabrication, but clearly dominate electrical properties of polycrystalline thin films.}
}

@article{devonshire1949xcvi,
  title = {{{XCVI}}. {{Theory}} of Barium Titanate},
  author = {Devonshire, A. F.},
  year = {1949},
  month = oct,
  journal = {The London, Edinburgh, and Dublin Philosophical Magazine and Journal of Science},
  volume = {40},
  number = {309},
  pages = {1040--1063},
  publisher = {{Taylor \& Francis}},
  issn = {1941-5982},
  doi = {10.1080/14786444908561372},
  abstract = {The theory of the dielectric and crystallographic properties of barium titanate is considered. By expanding the free energy as a function of polarization and strain and making reasonable assumptions about the coefficients, it is found possible to account for the various crystal transitions. Calculations are made of the dielectric constants, crystal stains, internal energy, and self polarization as functions of temperature. Finally relations are obtained between the coefficients in the free energy and the ionic force constants. These are used to estimate some of the coefficients which are not completely determined by experimental data.},
  annotation = {01424  ZSCC: 0001424  \_eprint: https://doi.org/10.1080/14786444908561372}
}

@article{devries1957microstructure,
  title = {Microstructure of {{Barium Titanate Ceramics}}},
  author = {DeVRIES, R. C. and Burke, J. E.},
  year = {1957},
  month = jun,
  journal = {Journal of the American Ceramic Society},
  volume = {40},
  number = {6},
  pages = {200--206},
  issn = {0002-7820, 1551-2916},
  doi = {10.1111/j.1151-2916.1957.tb12603.x},
  langid = {english},
  annotation = {00125  ZSCC: 0000125}
}

@article{dibartolomeo2016graphene,
  title = {Graphene {{Schottky}} Diodes: {{An}} Experimental Review of the Rectifying Graphene/Semiconductor Heterojunction},
  shorttitle = {Graphene {{Schottky}} Diodes},
  author = {Di Bartolomeo, Antonio},
  year = {2016},
  month = jan,
  journal = {Physics Reports},
  series = {Graphene {{Schottky}} Diodes: {{An}} Experimental Review of the Rectifying Graphene/Semiconductor Heterojunction},
  volume = {606},
  pages = {1--58},
  issn = {0370-1573},
  doi = {10.1016/j.physrep.2015.10.003},
  abstract = {In the past decade graphene has been one of the most studied materials for several unique and excellent properties. Due to its two dimensional nature, physical and chemical properties and ease of manipulation, graphene offers the possibility of integration with the existing semiconductor technology for next-generation electronic and sensing devices. In this context, the understanding of the graphene/semiconductor interface is of great importance since it can constitute a versatile standalone device as well as the building-block of more advanced electronic systems. Since graphene was brought to the attention of the scientific community in 2004, the device research has been focused on the more complex graphene transistors, while the graphene/semiconductor junction, despite its importance, has started to be the subject of systematic investigation only recently. As a result, a thorough understanding of the physics and the potentialities of this device is still missing. The studies of the past few years have demonstrated that graphene can form junctions with 3D or 2D semiconducting materials which have rectifying characteristics and behave as excellent Schottky diodes. The main novelty of these devices is the tunable Schottky barrier height, a feature which makes the graphene/semiconductor junction a great platform for the study of interface transport mechanisms as well as for applications in photo-detection, high-speed communications, solar cells, chemical and biological sensing, etc. In this paper, we review the state-of-the art of the research on graphene/semiconductor junctions, the attempts towards a modeling and the most promising applications.},
  annotation = {00225}
}

@article{ding2017prediction,
  title = {Prediction of Intrinsic Two-Dimensional Ferroelectrics in {{In}}{\textsubscript{2}}{{Se}}{\textsubscript{3}} and Other {{III}}{\textsubscript{2}}-{{VI}}{\textsubscript{3}} van Der {{Waals}} Materials},
  author = {Ding, Wenjun and Zhu, Jianbao and Wang, Zhe and Gao, Yanfei and Xiao, Di and Gu, Yi and Zhang, Zhenyu and Zhu, Wenguang},
  year = {2017},
  month = apr,
  journal = {Nature Communications},
  volume = {8},
  number = {1},
  pages = {1--8},
  issn = {2041-1723},
  doi = {10.1038/ncomms14956},
  abstract = {The development of devices based on 2D materials beyond graphene benefits from identifying compounds with diverse functional properties. Here, the authors predict computationally that 2D In2Se3and related materials are room temperature ferroelectrics with both in- and out-of-plane polarization.},
  copyright = {2017 The Author(s)},
  langid = {english},
  keywords = {computation,DFT,ferroelectric,In2Se3 α (2H),In2Se3 α (3R),In2Se3 β},
  annotation = {00000}
}

@article{ding2021twodimensional,
  title = {Two-{{Dimensional Antiferroelectric Tunnel Junction}}},
  author = {Ding, Jun and Shao, Ding-Fu and Li, Ming and Wen, Li-Wei and Tsymbal, Evgeny Y.},
  year = {2021},
  month = feb,
  journal = {Physical Review Letters},
  volume = {126},
  number = {5},
  pages = {057601},
  publisher = {{American Physical Society}},
  doi = {10.1103/PhysRevLett.126.057601},
  abstract = {Ferroelectric tunnel junctions (FTJs), which consist of two metal electrodes separated by a thin ferroelectric barrier, have recently aroused significant interest for technological applications as nanoscale resistive switching devices. So far, most existing FTJs have been based on perovskite-oxide barrier layers. The recent discovery of the two-dimensional (2D) van der Waals ferroelectric materials opens a new route to realize tunnel junctions with new functionalities and nm-scale dimensions. Because of the weak coupling between the atomic layers in these materials, the relative dipole alignment between them can be controlled by applied voltage. This allows transitions between ferroelectric and antiferroelectric orderings, resulting in significant changes of the electronic structure. Here, we propose to realize 2D antiferroelectric tunnel junctions (AFTJs), which exploit this new functionality, based on bilayer In2X3 (X=S, Se, Te) barriers and different 2D electrodes. Using first-principles density functional theory calculations, we demonstrate that the In2X3 bilayers exhibit stable ferroelectric and antiferroelectric states separated by sizable energy barriers, thus supporting a nonvolatile switching between these states. Using quantum-mechanical modeling of the electronic transport, we explore in-plane and out-of-plane tunneling across the In2S3 van der Waals bilayers, and predict giant tunneling electroresistance effects and multiple nonvolatile resistance states driven by ferroelectric-antiferroelectric order transitions. Our proposal opens a new route to realize nanoscale memory devices with ultrahigh storage density using 2D AFTJs.},
  keywords = {computation,ferroelectric,FTJ}
}

@article{dong2020influence,
  title = {Influence of van Der {{Waals}} Epitaxy on Phase Transformation Behaviors in {{2D}} Heterostructure},
  author = {Dong, Jiyu and Liu, Lixuan and Nie, Anmin and Xiang, Jianyong and Zhai, Kun and Wang, Bochong and Wen, Fusheng and Mu, Congpu and Chen, Yanan and Zhao, Zhisheng and Gong, Yongji and Tian, Yongjun and Liu, Zhongyuan},
  year = {2020},
  month = jan,
  journal = {Applied Physics Letters},
  volume = {116},
  number = {2},
  pages = {021602},
  publisher = {{American Institute of Physics}},
  issn = {0003-6951},
  doi = {10.1063/1.5131039},
  abstract = {Despite exhibiting their attractive properties and performances, the interlayer interaction in two-dimensional van der Waals epitaxy heterostructures is not well understood. Here, we demonstrate the growth of two dimensional vertically stacked multilayer {$\beta$}-In2Se3/monolayer WS2 heterostructures via the chemical vapor deposition method. Despite a large lattice misfit (29.9\%), the vertically stacked {$\beta$}-In2Se3/WS2 heterostructures exhibit van der Waals epitaxy with well-aligned lattice orientation of WS2(100)[001]//In2Se3(100)[001], forming a periodic superlattice. Interestingly, a reversible phase transformation of epitaxial {$\beta$}-In2Se3 has been observed by temperature-dependent Raman spectroscopy and electron diffraction conducted from liquid N2 to room temperature. Notably, the phase transformation of epitaxial {$\beta$}-In2Se3 can only be observed when its layer number is larger than 4 and the transformation temperature increases with the increase in the layer number, indicating a layer number dependent phase transformation of epitaxial {$\beta$}-In2Se3. These results indicate that the confinement effect exists between monolayer WS2 and epitaxial {$\beta$}-In2Se3, strongly constraining the lattice change of adjacent few layers of {$\beta$}-In2Se3.},
  keywords = {In2Se3 β'}
}

@article{drygas2016ammonolysis,
  title = {Ammonolysis of Polycrystalline and Amorphized Gallium Arsenide {{GaAs}} to Polytype-Specific Nanopowders of Gallium Nitride {{GaN}}},
  author = {Dryga{\'s}, Mariusz and Jele{\'n}, Piotr and Radecka, Marta and Janik, Jerzy F.},
  year = {2016},
  month = apr,
  journal = {RSC Advances},
  volume = {6},
  number = {47},
  pages = {41074--41086},
  publisher = {{The Royal Society of Chemistry}},
  issn = {2046-2069},
  doi = {10.1039/C6RA05706C},
  abstract = {Convenient single-step N-for-As metathesis reactions of gallium arsenide GaAs with ammonia NH3 at temperatures in the range 650\textendash 950 \textdegree C for 6\textendash 90 hours afforded in this oxygen-free system high yields of pure nanocrystalline powders of the wide bandgap semiconductor gallium nitride GaN. High energy ball milling via noticeable amorphization of the monocrystalline cubic GaAs substrate enabled complete ammonolysis and nitride preparation at lower temperatures and shorter times relative to manual grinding. Under the applied conditions, all by-products were removed as volatiles affording pure GaN nanopowders. Reaction-controlled average crystallite sizes ranged from a few to a few tens of nanometers. When compared to the related ammonolysis reactions of cubic GaP and cubic GaSb which yielded, respectively, either the hexagonal polytype only or mixtures of mostly hexagonal with some cubic GaN polytypes, here, the nitride could be made both as solely hexagonal and as a mixture of two polytypes in a wide composition range. All this supports diverse reaction pathways which were found to be closely correlated with substrate grain size characteristics. The ball milled fine GaAs particles afforded only hexagonal or hexagonal GaN-enriched mixtures pointing to predominantly thermodynamic reaction control. Under similar conditions, the manually ground coarser GaAs particles yielded cubic GaN-enriched mixtures, instead, consistent with prevailing topochemical control.},
  langid = {english}
}

@article{du2019high,
  title = {High Electrical Conductivity in the Epitaxial Polar Metals {{LaAuGe}} and {{LaPtSb}}},
  author = {Du, Dongxue and Lim, Amber and Zhang, Chenyu and Strohbeen, Patrick J. and Shourov, Estiaque H. and Rodolakis, Fanny and McChesney, Jessica L. and Voyles, Paul and Fredrickson, Daniel C. and Kawasaki, Jason K.},
  year = {2019},
  month = dec,
  journal = {APL Materials},
  volume = {7},
  number = {12},
  pages = {121107},
  publisher = {{AIP Publishing LLC}},
  doi = {10/gg3f5b},
  abstract = {Polar metals are an intriguing class of materials that simultaneously host free carriers and polar structural distortions. Despite the name ``polar metal,'' however, most well-studied polar metals ar...},
  copyright = {\textcopyright{} 2019 Author(s).},
  langid = {english},
  annotation = {00000  ZSCC: 0000002}
}

@article{ducharne2020simulation,
  title = {A {{Simulation Model}} for {{Narrow Band Gap Ferroelectric Materials}}},
  author = {Ducharne, Benjamin and Juuti, Jari and Bai, Yang},
  year = {2020},
  month = sep,
  journal = {Advanced Theory and Simulations},
  volume = {3},
  number = {9},
  pages = {2000052},
  publisher = {{John Wiley \& Sons, Ltd}},
  issn = {2513-0390},
  doi = {10.1002/adts.202000052},
  abstract = {Abstract Various ferroelectric simulation models have been developed in recent decades in order to study the mechanisms and predict the behaviors of ferroelectrics by simulating their hysteresis loops. Conventional ferroelectrics have wide optical band gaps ({$>$}2.7~eV), making them difficult to respond to visible light. Although their ferroelectricity can be affected by higher-energy radiation like ultraviolet, little attention is paid to the development of their models incorporating light-dependent factors. However, in recent years, narrow band gap ({$<$}2.5~eV) ferroelectrics have been discovered and are increasingly researched. These special ferroelectrics effectively absorb visible light and hence exhibit strongly light-dependent ferroelectricity, triggering potentially a broad range of applications. Therefore, there is a need to develop a model for these ferroelectrics in order to predict their behavior under visible light. Such a model is also needed to improve the understanding of the interaction mechanisms between light and domains. In this paper, a ferroelectric simulation model based on the Jiles?Atherton theory considering light dependence is developed for the first time, and its accuracy is validated by experiments. The model shows an average error of 7.5\% on polarization values compared to experimental results and thus can be employed to reliably predict photo-induced ferroelectricity.},
  keywords = {ferroelectric,ferroelectrics,Jiles–Atherton model,KNBNNO,narrow band gaps,photoferroelectrics},
  file = {C\:\\Users\\ffdra\\Zotero\\storage\\P5FSAUPD\\Ducharne et al. - 2020 - A Simulation Model for Narrow Band Gap Ferroelectr.pdf}
}

@inproceedings{dunkel2017fefet,
  title = {A {{FeFET}} Based Super-Low-Power Ultra-Fast Embedded {{NVM}} Technology for 22nm {{FDSOI}} and Beyond},
  booktitle = {2017 {{IEEE International Electron Devices Meeting}} ({{IEDM}})},
  author = {D{\"u}nkel, S. and Trentzsch, M. and Richter, R. and Moll, P. and Fuchs, C. and Gehring, O. and Majer, M. and Wittek, S. and M{\"u}ller, B. and Melde, T. and Mulaosmanovic, H. and Slesazeck, S. and M{\"u}ller, S. and Ocker, J. and Noack, M. and L{\"o}hr, D.-A. and Polakowski, P. and M{\"u}ller, J. and Mikolajick, T. and H{\"o}ntschel, J. and Rice, B. and Pellerin, J. and Beyer, S.},
  year = {2017},
  month = dec,
  pages = {19.7.1-19.7.4},
  issn = {2156-017X},
  doi = {10.1109/iedm.2017.8268425},
  abstract = {We show the implementation of a ferroelectric field effect transistor (FeFET) based eNVM solution into a leading edge 22nm FDSOI CMOS technology. Memory windows of 1.5 V are demonstrated in aggressively scaled FeFET cells with an area as small as 0.025 {$\mu$}m2 At this point program/erase endurance cycles up to 105 are supported. Complex pattern are written into 32 MBit arrays using ultrafast program/erase pulses in a 10 ns range at 4.2 V. High temperature retention up to 300 \textdegree C is achieved. It makes FeFET based eNVM a viable choice for overall low-cost and low-power IoT applications in 22nm and beyond technology nodes.},
  keywords = {aggressively scaled FeFET cells,Arrays,CMOS memory circuits,FeFET based super-low-power ultra-fast embedded NVM technology,ferroelectric field effect transistor,ferroelectric field effect transistor based eNVM solution,ferroelectric storage,field effect transistors,Internet of Things,leading edge 22nm FDSOI CMOS technology,Logic gates,low-power electronics,low-power IoT applications,memory windows,Nonvolatile memory,Performance evaluation,program/erase endurance cycles,random-access storage,silicon-on-insulator,Silicon-on-insulator,size 22.0 nm,temperature 300.0 degC,Threshold voltage,time 10.0 ns,ultrafast program/erase pulses,voltage 1.5 V,voltage 4.2 V,Voltage measurement},
  annotation = {00051}
}

@article{dziaugys2020piezoelectric,
  title = {Piezoelectric Domain Walls in van Der {{Waals}} Antiferroelectric {{CuInP2Se6}}},
  author = {Dziaugys, Andrius and Kelley, Kyle and Brehm, John A. and Tao, Lei and Puretzky, Alexander and Feng, Tianli and O'Hara, Andrew and Neumayer, Sabine and Chyasnavichyus, Marius and Eliseev, Eugene A. and Banys, Juras and Vysochanskii, Yulian and Ye, Feng and Chakoumakos, Bryan C. and Susner, Michael A. and McGuire, Michael A. and Kalinin, Sergei V. and Ganesh, Panchapakesan and Balke, Nina and Pantelides, Sokrates T. and Morozovska, Anna N. and Maksymovych, Petro},
  year = {2020},
  month = jul,
  journal = {Nature Communications},
  volume = {11},
  number = {1},
  pages = {3623},
  publisher = {{Nature Publishing Group}},
  issn = {2041-1723},
  doi = {10.1038/s41467-020-17137-0},
  abstract = {Polar van der Waals chalcogenophosphates exhibit unique properties, such as negative electrostriction and multi-well ferrielectricity, and enable combining dielectric and 2D electronic materials. Using low temperature piezoresponse force microscopy, we revealed coexistence of piezoelectric and non-piezoelectric phases in CuInP2Se6, forming unusual domain walls with enhanced piezoelectric response. From systematic imaging experiments we have inferred the formation of a partially polarized antiferroelectric state, with inclusions of structurally distinct ferrielectric domains enclosed by the corresponding phase boundaries. The assignment is strongly supported by optical spectroscopies and density-functional-theory calculations. Enhanced piezoresponse at the ferrielectric/antiferroelectric phase boundary and the ability to manipulate this entity with electric field on the nanoscale expand the existing phenomenology of functional domain walls. At the same time, phase-coexistence in chalcogenophosphates may lead to rational strategies for incorporation of ferroic functionality into van der Waals heterostructures, with stronger resilience toward detrimental size-effects.},
  copyright = {2020 This is a U.S. Government work and not under copyright protection in the US; foreign copyright protection may apply},
  langid = {english},
  keywords = {anti-ferroelectric,CuInP2Se6,DFT,ferroelectric,Raman,Raman temperature,second harmonic generation,Temperature dependence,XRD}
}

@inproceedings{electric,
  title = {Electric Field Effect Studies of Ferroelectric {{2D}} Crystals of {\emph{{$\alpha$}}}-{{In}}{\textsubscript{2}}{{Se}}{\textsubscript{3}} and {{MBE}} Grown Fields of {$\gamma$}-{{InSe}}},
  booktitle = {Bulletin of the {{American Physical Society}}},
  publisher = {{American Physical Society}},
  keywords = {⛔ No DOI found}
}

@article{elhadidy2011symmetrical,
  title = {Symmetrical Current\textendash Voltage Characteristic of a Metal\textendash Semiconductor\textendash Metal Structure of {{Schottky}} Contacts and Parameter Retrieval of a {{CdTe}} Structure},
  author = {Elhadidy, H. and Sikula, J. and Franc, J.},
  year = {2011},
  month = dec,
  journal = {Semiconductor Science and Technology},
  volume = {27},
  number = {1},
  pages = {015006},
  issn = {0268-1242},
  doi = {10.1088/0268-1242/27/1/015006},
  abstract = {Symmetrical, non-linear and current\textendash voltage (I\textendash V) characteristics of a metal\textendash semiconductor\textendash metal (M-S-M) structure of two metallic Schottky contacts fabricated to a p-type semiconductor were modeled by treating the semiconductor as a resistor sandwiched between two identical head-to-head Schottky barriers. The voltage distributions along the M-S-M structure were numerically determined and found that the voltage drop across the reverse-biased Schottky barrier is dominating at the low bias voltage, and the dominant range depends on the value of the resistor of the semiconductor bulk. The field dependence of barrier height due to the image force was proposed to be the mechanism for the current through the M-S-M structure when the voltage drop across the reverse-biased barrier is dominating. The proposed model was applied to the I\textendash V curves measured at different temperatures on low-resistivity p-type CdTe with Au contacts and the density of the effective acceptors calculated, and the zero-field Schottky barrier height and the Richardson constant were extracted using the activation energy method. The extracted parameters fitted well with that published for the same material structure.},
  langid = {english},
  annotation = {00044}
}

@article{fan2015enhanced,
  title = {Enhanced Photovoltaic Effects and Switchable Conduction Behavior in {{BiFe}}{\textsubscript{0.6}}{{Sc}}{\textsubscript{0.4}}{{O}}{\textsubscript{3}} Thin Films},
  author = {Fan, Zhen and Ji, Wei and Li, Tao and Xiao, Juanxiu and Yang, Ping and Ong, Khuong Phuong and Zeng, Kaiyang and Yao, Kui and Wang, John},
  year = {2015},
  month = apr,
  journal = {Acta Materialia},
  volume = {88},
  pages = {83--90},
  issn = {1359-6454},
  doi = {10.1016/j.actamat.2015.01.021},
  abstract = {Enhanced photovoltaic effects are demonstrated in an In2O3-SnO2/BiFe0.6Sc0.4O3/LaNiO3 (ITO/BFSO/LNO) ferroelectric thin film heterostructure. The Sc-substitution greatly improves the bulk conductivity of BiFeO3 (BFO) and modifies the energy band alignment in the ITO/BFSO/LNO capacitor structure, where a tunable Schottky-to-Ohmic contact at the BFSO/LNO interface and an Ohmic ITO/BFSO contact are purposely established. In negatively poled BFSO films, constructive photovoltaic effects at both the bulk and the BFSO/LNO interface lead to a large Voc up to 0.6V and a 5-fold enhancement in efficiency compared with conventional BFO films. In addition, ferroelectric polarization modulation of the Schottky barrier height at the BFSO/LNO interface results in a conversion between Schottky and Ohmic conduction, which gives rise to switchable high- and low-resistance states. The present work demonstrates a strategy effective to realize ferroelectric-based thin film structure with enhanced photovoltaic effects and memory function.},
  langid = {english},
  keywords = {BiFeO,BiFeO3,Ferroelectric,Interface,Photovoltaic,Switchable conduction behavior}
}

@article{fan2017ferroelectric,
  title = {Ferroelectric {{Diodes}} with {{Charge Injection}} and {{Trapping}}},
  author = {Fan, Zhen and Fan, Hua and Lu, Zengxing and Li, Peilian and Huang, Zhifeng and Tian, Guo and Yang, Lin and Yao, Junxiang and Chen, Chao and Chen, Deyang and Yan, Zhibo and Lu, Xubing and Gao, Xingsen and Liu, Jun-Ming},
  year = {2017},
  month = jan,
  journal = {Physical Review Applied},
  volume = {7},
  number = {1},
  pages = {014020},
  publisher = {{American Physical Society}},
  doi = {10.1103/PhysRevApplied.7.014020},
  abstract = {Ferroelectric diodes with polarization-modulated Schottky barriers are promising for applications in resistive switching (RS) memories. However, they have not achieved satisfactory performance reliability as originally hoped. The physical origins underlying this issue have not been well studied, although they deserve much attention. Here, by means of scanning Kelvin probe microscopy we show that the electrical poling of ferroelectric diodes can cause significant charge injection and trapping besides polarization switching. We further show that the reproducibility and stability of switchable diode-type RS behavior are significantly affected by the interfacial traps. A theoretical model is then proposed to quantitatively describe the modifications of Schottky barriers by charge injection and trapping. This model is able to reproduce various types of hysteretic current-voltage characteristics as experimentally observed. It is further revealed that the charge injection and trapping can significantly modify the electroresistance ratio, RS polarity, and high- or low-resistance states initially defined by the polarization direction. Several approaches are suggested to suppress the effect of charge injection and trapping so as to realize high-performance polarization-reversal-induced RS. This study, therefore, reveals the microscopic mechanisms for the RS behavior comodulated by polarization reversal and charge trapping in ferroelectric diodes, and also provides useful suggestions for developing reliable ferroelectric RS memories.},
  keywords = {Schottky}
}

@article{fang2020design,
  title = {Design of a Multifunctional Polar Metal via First-Principles High-Throughput Structure Screening},
  author = {Fang, Yue-Wen and Chen, Hanghui},
  year = {2020},
  month = feb,
  journal = {Communications Materials},
  volume = {1},
  number = {1},
  pages = {1--8},
  publisher = {{Nature Publishing Group}},
  issn = {2662-4443},
  doi = {10.1038/s43246-019-0005-6},
  abstract = {Polar metal oxides are not frequently observed, yet offer attractive properties for functional devices. Now, high-throughput structure screening of a thousand crystal structures reveals that BiPbTi2O6 can form both polar and metallic structures.},
  copyright = {2020 The Author(s)},
  langid = {english},
  annotation = {00000  ZSCC: 0000001}
}

@article{fei2018ferroelectric,
  title = {Ferroelectric Switching of a Two-Dimensional Metal},
  author = {Fei, Zaiyao and Zhao, Wenjin and Palomaki, Tauno A. and Sun, Bosong and Miller, Moira K. and Zhao, Zhiying and Yan, Jiaqiang and Xu, Xiaodong and Cobden, David H.},
  year = {2018},
  month = aug,
  journal = {Nature},
  volume = {560},
  number = {7718},
  pages = {336--339},
  issn = {1476-4687},
  doi = {10.1038/s41586-018-0336-3},
  abstract = {Two- and three-layer WTe2 exhibits spontaneous out-of-plane electric polarization that can be switched electrically at room temperature and is sufficiently robust for use in applications with other two-dimensional materials.},
  copyright = {2018 Macmillan Publishers Ltd., part of Springer Nature},
  langid = {english},
  keywords = {ferroelectric,ferroelectric metal,Wte2},
  annotation = {00072}
}

@article{feng2014back,
  title = {Back {{Gated Multilayer InSe Transistors}} with {{Enhanced Carrier Mobilities}} via the {{Suppression}} of {{Carrier Scattering}} from a {{Dielectric Interface}}},
  author = {Feng, Wei and Zheng, Wei and Cao, Wenwu and Hu, PingAn},
  year = {2014},
  journal = {Advanced Materials},
  volume = {26},
  number = {38},
  pages = {6587--6593},
  issn = {1521-4095},
  doi = {10.1002/adma.201402427},
  abstract = {The back gate multilayer InSe FETs exhibit ultrahigh carrier mobilities, surpassing all the reported layer semiconductor based electronics with the same device configuration, which is achieved by the suppression of the carrier scattering from interfacial coulomb impurities or surface polar phonons at the interface of an oxidized dielectric substrate. The room-temperature mobilities of multilayer InSe transistors increase from 64 cm2V-1s-1 to 1055 cm2V-1s-1 using a bilayer dielectric of poly-(methyl methacrylate) (PMMA)/Al2O3. The transistors also have high current on/off ratios of 1 \texttimes{} 108, low standby power dissipation, and robust current saturation in a broad voltage range.},
  copyright = {\textcopyright{} 2014 WILEY-VCH Verlag GmbH \& Co. KGaA, Weinheim},
  keywords = {device,FET,flake,Heterostructure,InSe β (2H),mobility,SAED,TEM,XRD}
}

@article{feng2015gate,
  title = {Gate {{Modulation}} of {{Threshold Voltage Instability}} in {{Multilayer InSe Field Effect Transistors}}},
  author = {Feng, Wei and Zheng, Wei and Chen, XiaoShuang and Liu, Guangbo and Hu, PingAn},
  year = {2015},
  month = dec,
  journal = {ACS Applied Materials \& Interfaces},
  volume = {7},
  number = {48},
  pages = {26691--26695},
  publisher = {{American Chemical Society}},
  issn = {1944-8244},
  doi = {10.1021/acsami.5b08635},
  abstract = {We report a modulation of threshold voltage instability of back-gated multilayer InSe FETs by gate bias stress. The performance stability of multilayer InSe FETs is affected by gate bias polar, gate bias stress time and gate bias sweep rate under ambient conditions. The on-current increases and threshold voltage shifts to negative gate bias stress direction with negative bias stress applied, which are opposite to that of positive bias stress. The intensity of gate bias stress effect is influenced by applied gate bias time and the sweep rate of gate bias stress. The behavior can be explained by the surface charge trapping model due to the adsorbing/desorbing oxygen and/or water molecules on the InSe surface. This study offers an opportunity to understand gate bias stress modulation of performance instability of back-gated multilayer InSe FETs and provides a clue for designing desirable InSe nanoelectronic and optoelectronic devices.},
  keywords = {afm,FET,flake,InSe,mobility}
}

@article{feng2015performance,
  title = {Performance Improvement of Multilayer {{InSe}} Transistors with Optimized Metal Contacts},
  author = {Feng, Wei and Zhou, Xin and Quan Tian, Wei and Zheng, Wei and Hu, PingAn},
  year = {2015},
  journal = {Physical Chemistry Chemical Physics},
  volume = {17},
  number = {5},
  pages = {3653--3658},
  publisher = {{Royal Society of Chemistry}},
  doi = {10.1039/C4CP04968C},
  langid = {english},
  keywords = {AFM,device,EDS,FET,flake,InSe,mobility,Raman,SAED,TEM}
}

@article{feng2016sensitive,
  title = {Sensitive {{Electronic-Skin Strain Sensor Array Based}} on the {{Patterned Two-Dimensional}} {$\alpha$}-{{In}}{\textsubscript{2}}{{Se}}{\textsubscript{3}}},
  author = {Feng, Wei and Zheng, Wei and Gao, Feng and Chen, XiaoShuang and Liu, Guangbo and Hasan, Tawfique and Cao, WenWu and Hu, PingAn},
  year = {2016},
  month = jun,
  journal = {Chemistry of Materials},
  volume = {28},
  number = {12},
  pages = {4278--4283},
  publisher = {{American Chemical Society}},
  issn = {0897-4756},
  doi = {10.1021/acs.chemmater.6b01073},
  abstract = {Two-dimensional (2D) layered semiconductors have emerged as a highly attractive class of materials for flexible and wearable strain sensor-centric devices such as electronic-skin (e-skin). This is primarily due to their dimensionality, excellent mechanical flexibility, and unique electronic properties. However, the lack of effective and low-cost methods for wafer-scale fabrication of these materials for strain sensor arrays limits their potential for such applications. Here, we report growth of large-scale 2D In2Se3 nanosheets by templated chemical vapor deposition (CVD) method, using In2O3 and Se powders as precursors. The strain sensors fabricated from the as-grown 2D In2Se3 films show 2 orders of magnitude higher sensitivity (gauge factor {$\sim$}237 in -0.39\% to 0.39\% uniaxial strain range along the device channel length) than what has been demonstrated from conventional metal-based (gauge factor: {$\sim$}1\textendash 5) and graphene-based strain sensors (gauge factor: {$\sim$}2\textendash 4) in a similar uniaxial strain range. The integrated strain sensor array, fabricated from the template-grown 2D In2Se3 films, exhibits a high spatial resolution of {$\sim$}500 {$\mu$}m in strain distribution. Our results demonstrate the applicability and highly attractive properties of 2D layered semiconductors in e-skins for robotics and human body motion monitoring.}
}

@article{feng2018highperformance,
  title = {High-Performance and Flexible Photodetectors Based on Chemical Vapor Deposition Grown Two-Dimensional {{In}}{\textsubscript{2}}{{Se}}{\textsubscript{3}} Nanosheets},
  author = {Feng, Wei and Gao, Feng and Hu, Yunxia and Dai, Mingjin and Li, Hang and Wang, Lifeng and Hu, PingAn},
  year = {2018},
  month = sep,
  journal = {Nanotechnology},
  volume = {29},
  number = {44},
  pages = {445205},
  publisher = {{IOP Publishing}},
  issn = {0957-4484},
  doi = {10.1088/1361-6528/aadc73},
  abstract = {Two-dimensional (2D) In2Se3 with unique optical and electrical properties has great potential in next generation optoelectronics and multilevel phase-change memories. Here, for the first time, we report high-performance rigid and flexible photodetectors based on chemical vapor deposition (CVD) grown 2D In2Se3. Both rigid and flexible 2D In2Se3 photodetectors show a broadband response range from ultraviolet (254 nm) to visible light (700 nm). High photoresponsivities of 578 and 363 A {$\cdot$} W-1 are achieved using rigid and flexible 2D In2Se3 photodetectors, respectively, under 700 nm light illumination, which are higher than those of photodetectors based on mechanically exfoliated 2D In2Se3 and physical vapor deposition grown 2D In2Se3. Furthermore, flexible 2D In2Se3 photodetectors show good mechanical durability and photoresponse stability under repeated bending tests. A high and stable photoresponse provides an opportunity for CVD-grown 2D In2Se3 applications in flexible optoelectronic and photovoltaic devices.},
  langid = {english},
  keywords = {charge trapping,device,In2Se3 α,photo-transport,SAED,TEM},
  annotation = {ZSCC: 0000013}
}

@article{feng2018phaseengineeringdriven,
  title = {Phase-{{Engineering-Driven Enhanced Electronic}} and {{Optoelectronic Performance}} of {{Multilayer In}}{\textsubscript{2}}{{Se}}{\textsubscript{3}} {{Nanosheets}}},
  author = {Feng, Wei and Gao, Feng and Hu, Yunxia and Dai, Mingjin and Liu, He and Wang, Lifeng and Hu, PingAn},
  year = {2018},
  month = aug,
  journal = {ACS Applied Materials \& Interfaces},
  volume = {10},
  number = {33},
  pages = {27584--27588},
  issn = {1944-8244},
  doi = {10.1021/acsami.8b10194},
  abstract = {Here, we report electronic and optoelectronic performance of multilayer In2Se3 are effectively regulated by phase engineering. The electron mobility is increased to 22.8 cm2 V\textendash 1 s\textendash 1 for {$\beta$}-In2Se3 FETs, which is 18 times higher than 1.26 cm2 V\textendash 1 s\textendash 1 of {$\alpha$}-In2Se3 FETs. The enhanced electronic performance is attributed to larger carrier sheet density and lower contact resistance. Multilayer {$\beta$}-In2Se3 photodetector exhibits an ultrahigh responsivity of 8.8 \texttimes{} 104 A/W under 800 nm illumination, which is 574 times larger than 154.4 A/W of {$\alpha$}-In2Se3 photodetector. Our results demonstrate phase-engineering is a valid way to tune and further optimize electronic and optoelectronic performance of multilayer In2Se3 nanodevices.},
  keywords = {device,FET,flake,In2Se3 α,In2Se3 β,phase transition,phase transition α-β,photo-transport,Raman},
  annotation = {00003}
}

@article{fratini2016transient,
  title = {The {{Transient Localization Scenario}} for {{Charge Transport}} in {{Crystalline Organic Materials}}},
  author = {Fratini, Simone and Mayou, Didier and Ciuchi, Sergio},
  year = {2016},
  journal = {Advanced Functional Materials},
  volume = {26},
  number = {14},
  pages = {2292--2315},
  issn = {1616-3028},
  doi = {10.1002/adfm.201502386},
  abstract = {Charge transport in crystalline organic semiconductors is intrinsically limited by the presence of large thermal molecular motions, which are a direct consequence of the weak van der Waals intermolecular interactions. These lead to an original regime of transport called transient localization, sharing features of both localized and itinerant electron systems. After a brief review of experimental observations that pose a challenge to the theory, we concentrate on a commonly studied model which describes the interaction of the charge carriers with intermolecular vibrations. We present different theoretical approaches that have been applied to the problem in the past, and then turn to more modern approaches that are able to capture the key microscopic phenomenon at the origin of the puzzling experimental observations, i.e., the quantum localization of the electronic wavefunction at timescales shorter than the typical molecular motions. We describe in particular a relaxation time approximation which clarifies how the transient localization due to dynamical molecular motions relates to the Anderson localization realized for static disorder, and allows us to devise strategies to improve the mobility of actual compounds. The relevance of the transient localization scenario to other classes of systems is briefly discussed.},
  copyright = {\textcopyright{} 2016 WILEY-VCH Verlag GmbH \& Co. KGaA, Weinheim},
  langid = {english},
  keywords = {Anderson localization,charge transport,disordered systems,field-effect transistors,organic semiconductors}
}

@book{fridkin1979photoferroelectrics,
  title = {Photoferroelectrics},
  author = {Fridkin, Vladimir M.},
  year = {1979},
  series = {Springer {{Series}} in {{Solid-State Sciences}}},
  publisher = {{Springer-Verlag}},
  address = {{Berlin Heidelberg}},
  doi = {10.1007/978-3-642-81351-1},
  abstract = {Photoferroelectrics...},
  isbn = {978-3-642-81353-5},
  langid = {english}
}

@book{fridkin1980ferroelectric,
  title = {Ferroelectric {{Semiconductors}}},
  author = {Fridkin, Vladimir M. and Fridkine, Vladimir Mikhai͏\"lovitch},
  year = {1980},
  month = apr,
  publisher = {{Springer US}},
  isbn = {978-0-306-10957-7},
  langid = {english},
  keywords = {Science / Chemistry / Analytic,Science / Physics / Atomic \& Molecular,Science / Physics / Condensed Matter,Science / Spectroscopy \& Spectrum Analysis}
}

@article{frisenda2018recent,
  title = {Recent Progress in the Assembly of Nanodevices and van Der {{Waals}} Heterostructures by Deterministic Placement of {{2D}} Materials},
  author = {Frisenda, Riccardo and {Navarro-Moratalla}, Efr{\'e}n and Gant, Patricia and Lara, David P{\'e}rez De and {Jarillo-Herrero}, Pablo and Gorbachev, Roman V. and {Castellanos-Gomez}, Andres},
  year = {2018},
  month = jan,
  journal = {Chemical Society Reviews},
  volume = {47},
  number = {1},
  pages = {53--68},
  publisher = {{The Royal Society of Chemistry}},
  issn = {1460-4744},
  doi = {10.1039/C7CS00556C},
  abstract = {Designer heterostructures can now be assembled layer-by-layer with unmatched precision thanks to the recently developed deterministic placement methods to transfer two-dimensional (2D) materials. This possibility constitutes the birth of a very active research field on the so-called van der Waals heterostructures. Moreover, these deterministic placement methods also open the door to fabricate complex devices, which would be otherwise very difficult to achieve by conventional bottom-up nanofabrication approaches, and to fabricate fully-encapsulated devices with exquisite electronic properties. The integration of 2D materials with existing technologies such as photonic and superconducting waveguides and fiber optics is another exciting possibility. Here, we review the state-of-the-art of the deterministic placement methods, describing and comparing the different alternative methods available in the literature, and we illustrate their potential to fabricate van der Waals heterostructures, to integrate 2D materials into complex devices and to fabricate artificial bilayer structures where the layers present a user-defined rotational twisting angle.},
  langid = {english},
  keywords = {review article}
}

@article{fujimori2001electronic,
  title = {Electronic Structure of {{Mott}}\textendash{{Hubbard-type}} Transition-Metal Oxides},
  author = {Fujimori, A and Yoshida, T and Okazaki, K and Tsujioka, T and Kobayashi, K and Mizokawa, T and Onoda, M and Katsufuji, T and Taguchi, Y and Tokura, Y},
  year = {2001},
  month = jun,
  journal = {Journal of Electron Spectroscopy and Related Phenomena},
  series = {Strongly Correlated Systems},
  volume = {117--118},
  pages = {277--286},
  issn = {0368-2048},
  doi = {10.1016/S0368-2048(01)00253-5},
  abstract = {Oxides of Ti and V belong to the Mott\textendash Hubbard regime of the Zaanen\textendash Sawatzky\textendash Allen classification scheme of transition-metal compounds and have simple electronic structures which allow us to study the effect of electron correlation in a transparent way. In this article, we make an overview of our recent photoemission studies on Ti and V oxides, with special emphasis on metal-insulator transitions induced by the control of the width and the filling of the Ti and V 3d bands. Spectroscopic data yield spectral weight transfer between the coherent and incoherent parts of the d band, the spectral intensities at the Fermi level and the chemical potential shifts as functions of band filling. We show that such spectroscopic information well corresponds to the thermodynamic and transport properties and is necessary to understand electron correlation phenomena from a fundamental viewpoint.},
  langid = {english},
  keywords = {Chemical potential shift,Hubbard bands,Mott transition,Spectral weight transfer}
}

@article{fujisawa2018effect,
  title = {Effect of Boron Doping on the Electrical Conductivity of Metallicity-Separated Single Walled Carbon Nanotubes},
  author = {Fujisawa, Kazunori and Hayashi, Takuya and Endo, Morinobu and Terrones, Mauricio and Hee Kim, Jin and Ahm Kim, Yoong},
  year = {2018},
  journal = {Nanoscale},
  volume = {10},
  number = {26},
  pages = {12723--12733},
  publisher = {{Royal Society of Chemistry}},
  doi = {10.1039/C8NR02323A},
  langid = {english}
}

@article{gabel2020understanding,
  title = {Understanding {{Microscopic Operating Mechanisms}} of a van Der {{Waals Planar Ferroelectric Memristor}}},
  author = {Gabel, Matthew and Gu, Yi},
  year = {2020},
  month = dec,
  journal = {Advanced Functional Materials},
  volume = {n/a},
  number = {n/a},
  pages = {2009999},
  publisher = {{John Wiley \& Sons, Ltd}},
  issn = {1616-301X},
  doi = {10.1002/adfm.202009999},
  abstract = {Abstract Ferroelectric memristors represent a promising new generation of devices that have a wide range of applications in memory, digital information processing, and neuromorphic computing. Recently, van der Waals ferroelectric In2Se3 with unique interlinked out-of-plane and in-plane polarizations has enabled multidirectional resistance switching, providing unprecedented flexibility in planar and vertical device integrations. However, the operating mechanisms of these devices have remained unclear. Here, through the demonstration of van der Waals In2Se3-based planar ferroelectric memristors with the device resistance continuously tunable over three orders of magnitude, and by correlating device resistance states, ferroelectric domain configurations, and surface electric potential, the studies reveal that the resistive switching is controlled by the multidomain formations and the associated energy barriers between domains, as opposed to the commonly assumed Schottky barrier modulations at the metal-ferroelectric interface. The findings reveal new device physics through elucidating the microscopic operating mechanisms of this new generation of devices, and provide a critical guide for future device development and integration efforts.},
  keywords = {ferroelectric,In2Se3 α,KPFM,memristors,PFM,Raman,Raman peaks,rectifying junction,van der Waals materials},
  annotation = {00000  ZSCC: 0000000  0 citations (Crossref) [2021-02-02]}
}

@article{gao2014redox,
  title = {On the Redox Origin of Surface Trapping in {{AlGaN}}/{{GaN}} High Electron Mobility Transistors},
  author = {Gao, Feng and Chen, Di and Tuller, Harry L. and Thompson, Carl. V. and Palacios, Tom{\'a}s},
  year = {2014},
  month = mar,
  journal = {Journal of Applied Physics},
  volume = {115},
  number = {12},
  pages = {124506},
  publisher = {{American Institute of Physics}},
  issn = {0021-8979},
  doi = {10.1063/1.4869738},
  abstract = {Water-related redox couples in ambient air are identified as an important source of the surface trapping states, dynamic on-resistance, and drain current collapse in AlGaN/GaN high electron mobility transistors (HEMTs). Through in-situ X-ray photoelectron spectroscopy (XPS), direct signature of the water-related species\textemdash hydroxyl groups (OH) was found at the AlGaN surface at room temperature. It was also found that these species, as well as the current collapse, can be thermally removed above 200\,\textdegree C in vacuum conditions. An electron trapping mechanism based on the H2O/H2 and H2O/O2 redox couples is proposed to explain the 0.5\,eV energy level commonly attributed to the surface trapping states. Finally, the role of silicon nitride passivation in successfully removing current collapse in these devices is explained by blocking the water molecules away from the AlGaN surface.}
}

@article{gao2021intrinsic,
  title = {Intrinsic Polarization Coupling in {{2D}} {$\alpha$}-{{In}}{\textsubscript{2}}{{Se}}{\textsubscript{3}} toward Artificial Synapse with Multimode Operations},
  author = {Gao, Jing and Zheng, Yue and Yu, Wei and Wang, Yanan and Jin, Tengyu and Pan, Xuan and Loh, Kian Ping and Chen, Wei},
  year = {2021},
  month = mar,
  journal = {SmartMat},
  volume = {2},
  number = {1},
  pages = {88--98},
  publisher = {{John Wiley \& Sons, Ltd}},
  issn = {2688-819X},
  doi = {10.1002/smm2.1020},
  abstract = {Abstract Emulation of advanced synaptic functions of the human brain with electronic devices contributes an important step toward constructing high-efficiency neuromorphic systems. Ferroelectric materials are promising candidates as synaptic weight elements in neural network hardware due to their controllable polarization states. However, the increased depolarization field at the nanoscale and the complex fabrication process of the traditional ferroelectric materials hamper the development of high-density, low-power, and highly sensitive synaptic devices. Here,~we report the implementation of two-dimensional (2D) ferroelectric~{$\alpha$}-In2Se3 as an active channel material to emulate typical synaptic functions. The {$\alpha$}-In2Se3-based synaptic device features multimode operations, enabled by the coupled ferroelectric polarization under various voltage pulses applied at both drain~and gate terminals. Moreover, the energy consumption can be reduced to \textasciitilde{} 1?pJ by using high-? dielectric (Al2O3). The successful control of ferroelectric polarizations in {$\alpha$}-In2Se3 and its application in artificial synapses are expected to inspire the implementation of 2D ferroelectric materials for future neuromorphic systems.},
  keywords = {device,ferroelectric,FeSmFET,In2Se3 α (2H),PFM,Raman,Raman peaks,XRD}
}

@article{genenko2015mechanisms,
  title = {Mechanisms of Aging and Fatigue in Ferroelectrics},
  author = {Genenko, Yuri A. and Glaum, Julia and Hoffmann, Michael J. and Albe, Karsten},
  year = {2015},
  month = feb,
  journal = {Materials Science and Engineering: B},
  series = {Electrical {{Fatigue}}},
  volume = {192},
  pages = {52--82},
  issn = {0921-5107},
  doi = {10.1016/j.mseb.2014.10.003},
  abstract = {A comprehensive review of aging and fatigue phenomena in bulk polycrystalline ferroelectrics is presented. Three material classes are covered, namely the most widely used Pb[Zr1-xTix]O3 (PZT) ceramics and lead-free materials, including those based on bismuth sodium titanate Bi1/2Na1/2TiO3 (BNT) and alkali niobate [KxNa1-x]NbO3 (KNN). Aging is studied in poled and unpoled states both experimentally and theoretically. The variety of different loading regimes for fatigue includes DC electric field, unipolar, sesquipolar and bipolar cycling and all these differently combined with mechanical loading at different frequencies and temperatures. The role of device geometries and electrode materials is addressed and models describing charge migration and defect dipole re-orientation are discussed in the context of recent experimental studies.},
  langid = {english},
  annotation = {00000  ZSCC: 0000157}
}

@article{georgiou2018ferroelectricity,
  title = {Ferroelectricity in {{Polar Polymer-Based FETs}}: {{A Hysteresis Analysis}}},
  shorttitle = {Ferroelectricity in {{Polar Polymer-Based FETs}}},
  author = {Georgiou, Vasileia and Veksler, Dmitry and Campbell, Jason P. and Shrestha, Pragya R. and Ryan, Jason T. and Ioannou, Dimitris E. and Cheung, Kin P.},
  year = {2018},
  month = mar,
  journal = {Advanced Functional Materials},
  volume = {28},
  number = {10},
  pages = {1705250},
  publisher = {{John Wiley \& Sons, Ltd}},
  issn = {1616-301X},
  doi = {10.1002/adfm.201705250},
  abstract = {Abstract There is an increasing number of reports on polar polymer-based ferroelectric field effect transistors (FeFETs), where the hysteresis of the drain current?gate voltage (Id?Vg) curve is investigated as the result of the ferroelectric polarization effect. However, separating ferroelectric effect from many of the factors (such as charge injection/trapping and the presence of mobile ions in the polymer) that confound interpretation is still confusing and controversial. This work presents a methodology to reliably identify the confounding factors which obscure the polarization effect in FeFETs. Careful observation of the Id?Vg curves, as well as monitoring the Id?Vg hysteresis and flat band voltage shift as a function of temperature and sweep frequency, identifies the dominant mechanism. This methodology is demonstrated by using 15 nm thick high glass transition temperature polar polymer-based FeFETs. In these devices, room temperature hysteresis is largely a consequence of charge trapping and mobile ions, while ferroelectric polarization is observed at elevated temperatures. This methodology can be used to unambiguously prove the effect of ferroelectric polarization in FeFETs.},
  keywords = {charge trapping,FeFET,ferroelectric effects,flat band voltage shifts,Id–Vg hysteresis,mobile ions},
  annotation = {00003}
}

@article{goldenoptimization,
  title = {Optimization of {{Bi-layer Lift-Off Resist Process}}},
  author = {Golden, Jeremy and Miller, Harris and Nawrocki, Dan and Ross, Jack},
  pages = {4},
  langid = {english},
  keywords = {⛔ No DOI found},
  annotation = {00000},
  file = {C\:\\Users\\ffdra\\Zotero\\storage\\DCH5L8EI\\Golden et al. - Optimization of Bi-layer Lift-Off Resist Process.pdf}
}

@article{gong2014unusual,
  title = {The {{Unusual Mechanism}} of {{Partial Fermi Level Pinning}} at {{Metal}}\textendash{{MoS}}{\textsubscript{2}} {{Interfaces}}},
  author = {Gong, Cheng and Colombo, Luigi and Wallace, Robert M. and Cho, Kyeongjae},
  year = {2014},
  month = apr,
  journal = {Nano Letters},
  volume = {14},
  number = {4},
  pages = {1714--1720},
  issn = {1530-6984},
  doi = {10.1021/nl403465v},
  abstract = {Density functional theory calculations are performed to unravel the nature of the contact between metal electrodes and monolayer MoS2. Schottky barriers are shown to be present for a variety of metals with the work functions spanning over 4.2\textendash 6.1 eV. Except for the p-type Schottky contact with platinum, the Fermi levels in all of the studied metal\textendash MoS2 complexes are situated above the midgap of MoS2. The mechanism of the Fermi level pinning at metal\textendash MoS2 contact is shown to be unique for metal\textendash 2D-semiconductor interfaces, remarkably different from the well-known Bardeen pinning effect, metal-induced gap states, and defect/disorder induced gap states, which are applicable to traditional metal\textendash semiconductor junctions. At metal\textendash MoS2 interfaces, the Fermi level is partially pinned as a result of two interface behaviors: first by a metal work function modification by interface dipole formation due to the charge redistribution, and second by the production of gap states mainly of Mo d-orbitals character by the weakened intralayer S\textendash Mo bonding due to the interface metal\textendash S interaction. This finding would provide guidance to develop approaches to form Ohmic contact to MoS2.}
}

@article{gong2019multiferroicity,
  title = {Multiferroicity in Atomic van Der {{Waals}} Heterostructures},
  author = {Gong, Cheng and Kim, Eun Mi and Wang, Yuan and Lee, Geunsik and Zhang, Xiang},
  year = {2019},
  month = jun,
  journal = {Nature Communications},
  volume = {10},
  number = {1},
  pages = {1--6},
  issn = {2041-1723},
  doi = {10.1038/s41467-019-10693-0},
  abstract = {Low dimensional multiferroic materials promise the technological advances in next generation spintronic and microwave magnetoelectric devices. Here the authors propose the multiferroicity in the atomically thin ferromagnetic Cr2Ge2Te6/ferroelectric In2Se3 van der Waals heterostructure due to the crosslayer magnetoelectric coupling.},
  copyright = {2019 The Author(s)},
  langid = {english},
  keywords = {band structure,computation,DFT,ferroelectric},
  annotation = {00000}
}

@article{gopal2004conduction,
  title = {Conduction Studies on Electrodeposited Indium Selenide Thin Films},
  author = {Gopal, S. and Viswanathan, C. and Thamilselvan, M. and Premnazeer, K. and Narayandass, Sa K. and Mangalaraj, D.},
  year = {2004},
  month = may,
  journal = {Ionics},
  volume = {10},
  number = {3},
  pages = {300--303},
  publisher = {{Springer-Verlag}},
  issn = {1862-0760},
  doi = {10.1007/BF02382835},
  abstract = {Indium Selenide thin films were electrodeposited on Indium Tin Oxide (ITO) coated glass substrates from a mixture of Indium trichloride (InCl3) and selenium dioxide (SeO2) in aqueous solution by the potentiostatic electrodeposition technique. The InSe films showed that Mott's variable-range hopping conductivity (VRH) is dominant under low field ({$\sim$}2\texttimes 105 Vcm-1) condition. At high field the Current-Voltage studies (in the temperature range 300 \textendash{} 380 K) revealed that the conductivity of Indium selenide thin films is of Poole-Frenkel type. The plot drawn between Ln (I/V) and \th V showed a straight line and also the experimental data and the theoretical data closely matches. Hence Poole-Frenkel mechanism is confirmed and discussed in detail.},
  copyright = {2004 IfI - Institute for Ionics},
  langid = {english},
  keywords = {device,film,Localization,Poole-Frenkel,Resistivity/conductivity,Resistivity/conductivity-temperature,variable range hopping}
}

@article{gosling2021universal,
  title = {Universal Mobility Characteristics of Graphene Originating from Charge Scattering by Ionised Impurities},
  author = {Gosling, Jonathan H. and Makarovsky, Oleg and Wang, Feiran and Cottam, Nathan D. and Greenaway, Mark T. and Patan{\`e}, Amalia and Wildman, Ricky D. and Tuck, Christopher J. and Turyanska, Lyudmila and Fromhold, T. Mark},
  year = {2021},
  month = feb,
  journal = {Communications Physics},
  volume = {4},
  number = {1},
  pages = {1--8},
  publisher = {{Nature Publishing Group}},
  issn = {2399-3650},
  doi = {10.1038/s42005-021-00518-2},
  abstract = {Pristine graphene and graphene-based heterostructures can exhibit exceptionally high electron mobility if their surface contains few electron-scattering impurities. Mobility directly influences electrical conductivity and its dependence on the carrier density. But linking these key transport parameters remains a challenging task for both theorists and experimentalists. Here, we report numerical and analytical models of carrier transport in graphene, which reveal a universal connection between graphene's carrier mobility and the variation of its electrical conductivity with carrier density. Our model of graphene conductivity is based on a convolution of carrier density and its uncertainty, which is verified by numerical solution of the Boltzmann transport equation including the effects of charged impurity scattering and optical phonons on the carrier mobility. This model reproduces, explains, and unifies experimental mobility and conductivity data from a wide range of samples and provides a way to predict a priori all key transport parameters of graphene devices. Our results open a route for controlling the transport properties of graphene by doping and for engineering the properties of 2D materials and heterostructures.},
  copyright = {2021 The Author(s)},
  langid = {english},
  keywords = {Electronic properties and materials,Physics},
  annotation = {Bandiera\_abtest: a Cc\_license\_type: cc\_by Cg\_type: Nature Research Journals Primary\_atype: Research Subject\_term: Electronic properties and materials;Physics Subject\_term\_id: electronic-properties-and-materials;physics}
}

@article{greiner2013thinfilm,
  title = {Thin-Film Metal Oxides in Organic Semiconductor Devices: Their Electronic Structures, Work Functions and Interfaces},
  shorttitle = {Thin-Film Metal Oxides in Organic Semiconductor Devices},
  author = {Greiner, Mark T. and Lu, Zheng-Hong},
  year = {2013},
  month = jul,
  journal = {NPG Asia Materials},
  volume = {5},
  number = {7},
  pages = {e55-e55},
  publisher = {{Nature Publishing Group}},
  issn = {1884-4057},
  doi = {10.1038/am.2013.29},
  abstract = {Thin-film metal oxides are among the key materials used in organic semiconductor devices. As there are no intrinsic charge carriers in a typical organic semiconductor, all charges in the device must be injected from electrode/organic interfaces, whose energetic structure consequentially dictates the performance of devices. The energy barrier at the interface depends critically on the work function of the electrode. For this reason, various types of thin-film metal oxides can be used as a buffer layer to modify the electrode work function. This paper provides a review on recent progress in metal oxide/organic interface energetics, oxide valence structure and work function, as well as the impact of defects and interfacial reactions on oxide work functions. This review provides a rational guide to process engineers in selecting the best suitable electrode/oxide structures for a targeted applications.},
  copyright = {2013 The Author(s)},
  langid = {english},
  annotation = {Bandiera\_abtest: a Cg\_type: Nature Research Journals Primary\_atype: Reviews Subject\_term: Semiconductors;Surfaces, interfaces and thin films Subject\_term\_id: semiconductors;surfaces-interfaces-and-thin-films}
}

@article{grigorchak1997physical,
  title = {On Some Physical Properties of {{InSe}} and {{GaSe}} Semiconducting Crystals Intercalated by Ferroelectrics},
  author = {Grigorchak, I. I. and Netyaga, V. V. and Kovalyuk, Z. D.},
  year = {1997},
  month = mar,
  journal = {Journal of Physics: Condensed Matter},
  volume = {9},
  number = {12},
  pages = {L191--L195},
  publisher = {{IOP Publishing}},
  issn = {0953-8984},
  doi = {10.1088/0953-8984/9/12/001},
  abstract = {Physical mechanisms of intercalation of semiconductors are determined, establishing the main laws of intercalation, and the physical nature of new phenomena and effects induced by intercalation are explained; general statements for obtaining intercalates with characteristics assigned in advance are also developed.},
  langid = {english}
}

@article{grimaldi2020structural,
  title = {Structural Investigation of {{InSe}} Layered Semiconductors},
  author = {Grimaldi, I. and Gerace, T. and Pipita, M. M. and Perrotta, I. D. and Ciuchi, F. and Berger, H. and Papagno, M. and Castriota, M. and Pacil{\'e}, D.},
  year = {2020},
  month = may,
  journal = {Solid State Communications},
  volume = {311},
  pages = {113855},
  issn = {0038-1098},
  doi = {10.1016/j.ssc.2020.113855},
  abstract = {During the last decade, III\textendash VI layered semiconductors (GaSe, InSe, GaS, etc.) have emerged as potential candidates for various applications, such as FET and optoelectronic devices. The properties of this class of layered materials are strongly dependent on their structure, and the existence of different polytypes makes it necessary the identification of the structural phase. In this work, we have performed a detailed investigation of the crystal structure and morphology of bulk InSe, by means of X-ray diffraction (XRD), transmission electron microscopy (TEM) and Raman spectroscopy. The combination of the employed techniques allowed to identify the structural phase of InSe samples ({$\epsilon$} polytype). Most importantly, we show that only by crossing the information of each technique it is possible to unambiguously discern between similar polytypes.},
  langid = {english},
  keywords = {InSe β (2H),InSe γ (3R),InSe ε (2H),Raman,Raman peaks,SAED,TEM,XRD}
}

@article{groeseneken1990temperature,
  title = {Temperature Dependence of Threshold Voltage in Thin-Film {{SOI MOSFETs}}},
  author = {Groeseneken, G. and Colinge, J.-P. and Maes, H.E. and Alderman, J.C. and Holt, S.},
  year = {1990},
  month = aug,
  journal = {IEEE Electron Device Letters},
  volume = {11},
  number = {8},
  pages = {329--331},
  issn = {1558-0563},
  doi = {10.1109/55.57923},
  abstract = {A first-order model for the temperature dependence of threshold voltage in thin-film silicon-on-insulator (SOI) n-MOSFETs is described. The temperature dependence of the threshold voltage of thin-film SOI n-channel MOSFETs is analyzed. Threshold voltage variation with temperature is significantly smaller in thin-film (fully depleted) devices than in thick-film SOI and bulk devices. The threshold voltage is shown to be dependent on the depletion level of the device, i.e. whether it is fully depleted or not. There exists a critical temperature below which the device is fully depleted, and above which the device operates in the thick-film regime.{$<>$}},
  keywords = {Circuits,CMOS technology,MOSFETs,Semiconductor films,Silicon on insulator technology,Temperature dependence,Temperature distribution,Thin film devices,Threshold voltage,Transistors}
}

@article{groot2001growth,
  title = {Growth and Characterization of a Novel {{In}}{\textsubscript{2}}{{Se}}{\textsubscript{3}} Structure},
  author = {de Groot, C. H. and Moodera, J. S.},
  year = {2001},
  month = apr,
  journal = {Journal of Applied Physics},
  volume = {89},
  number = {8},
  pages = {4336--4340},
  publisher = {{American Institute of Physics}},
  issn = {0021-8979},
  doi = {10.1063/1.1355287},
  keywords = {In2Se3 κ}
}

@article{grzeta1990lowtemperature,
  title = {Low-Temperature {{X-ray}} Diffraction Examination of {{In}}{\textsubscript{2}}{{Se}}{\textsubscript{3}}},
  author = {Gr{\v z}eta, B. and Popovi{\'c}, S. and Cowlam, N. and {\v C}elustka, B.},
  year = {1990},
  journal = {Journal of Applied Crystallography},
  volume = {23},
  number = {4},
  pages = {340--341},
  issn = {1600-5767},
  doi = {10.1107/s0021889890002710},
  abstract = {Indium selenide, In2Se3, has been examined by X-ray diffraction in the temperature interval from 300 to 5 K. Coefficients of thermal expansion for the rhombohedral {$\alpha$}-In2Se3 phase in the low-temperature range have been determined and the appearance of a new phase at temperatures below 160 K was confirmed.},
  langid = {english},
  annotation = {00004}
}

@article{guan2020recent,
  title = {Recent {{Progress}} in {{Two-Dimensional Ferroelectric Materials}}},
  author = {Guan, Zhao and Hu, He and Shen, Xinwei and Xiang, Pinghua and Zhong, Ni and Chu, Junhao and Duan, Chungang},
  year = {2020},
  month = jan,
  journal = {Advanced Electronic Materials},
  volume = {6},
  number = {1},
  pages = {1900818},
  publisher = {{John Wiley \& Sons, Ltd}},
  issn = {2199-160X},
  doi = {10.1002/aelm.201900818},
  abstract = {Abstract The investigation of two-dimensional (2D) ferroelectrics has attracted significant interest in recent years for applications in functional electronics. Without the limitation of a finite size effect, 2D materials with stable layered structures and reduced surface energy may go beyond the presence of an enhanced depolarization field in ultrathin ferroelectrics, thereby opening a pathway to explore low-dimensional ferroelectricity, making ultra-high-density devices possible and maintaining Moore's Law. Although many theoretical works on potential 2D ferroelectric materials have been conducted, much still needs to be accomplished experimentally, as it is rare for 2D ferroelectric materials to be proven and plenty of 2D ferroelectrics are waiting to be discovered. First, experimental and theoretical progress on 2D ferroelectric materials, including in-plane and out-of-plane, is reviewed, followed by a general introduction to various characterization methods. Intrinsic mechanisms associated with promising 2D ferroelectric materials, together with related applications, are also discussed. Finally, an outlook for future trends and development in 2D ferroelectricity are explored. Researchers can use this to obtain a basic understanding of 2D ferroelectric materials and to build a database of progress of 2D ferroelectrics.},
  keywords = {2D ferroelectric mechanisms,2D ferroelectrics,2D materials,ferroelectric,review article},
  annotation = {00000  ZSCC: NoCitationData[s0]}
}

@article{guo2015charge,
  title = {Charge Trapping at the {{MoS}}{\textsubscript{2}}-{{SiO}}{\textsubscript{2}} Interface and Its Effects on the Characteristics of {{MoS2}} Metal-Oxide-Semiconductor Field Effect Transistors},
  author = {Guo, Yao and Wei, Xianlong and Shu, Jiapei and Liu, Bo and Yin, Jianbo and Guan, Changrong and Han, Yuxiang and Gao, Song and Chen, Qing},
  year = {2015},
  month = mar,
  journal = {Applied Physics Letters},
  volume = {106},
  number = {10},
  pages = {103109},
  publisher = {{American Institute of Physics}},
  issn = {0003-6951},
  doi = {10.1063/1.4914968},
  abstract = {The field effect transistors (FETs) based on thin layer MoS2 often have large hysteresis and unstable threshold voltage in their transfer curves, mainly due to the charge trapping at the oxide-semiconductor interface. In this paper, the charge trapping and de-trapping processes at the SiO2-MoS2 interface are studied. The trapping charge density and time constant at different temperatures are extracted. Making use of the trapped charges, the threshold voltage of the MoS2 based metal-oxide-semiconductor FETs is adjusted from 4\,V to -45\,V. Furthermore, the impact of the trapped charges on the carrier transport is evaluated. The trapped charges are suggested to give rise to the unscreened Coulomb scattering and/or the variable range hopping in the carrier transport of the MoS2 sheet.},
  annotation = {00119}
}

@article{guo2020oxidation,
  title = {Oxidation {{Behaviors}} of {{Two-dimensional Metal Chalcogenides}}},
  author = {Guo, Yu and Zhou, Si and Zhao, Jijun},
  year = {2020},
  month = mar,
  journal = {ChemNanoMat},
  volume = {n/a},
  number = {n/a},
  publisher = {{John Wiley \& Sons, Ltd}},
  issn = {2199-692X},
  doi = {10/gg3f4p},
  abstract = {Abstract Considering a variety of two-dimensional (2D) materials, metal chalcogenide monolayers, including transition metal dichalcogenides, group-IV and group-III monochalcogenides, and copper sulfide, are outstanding in the field of microelectronics and optoelectronics. Devices constructed of these 2D materials could be sensitively affected by ambient gases, such as O2 molecules. Regarding this significant issue, here we review the oxidation behaviors of 2D metal chalcogenides, especially for perfect and defective monolayers. Perfect monolayer metal chalcogenides are resistant to oxidation, resulting from the large activation energies for chemisorption and dissociation of O2 molecules during the reaction process. However, the defective monolayers with vacancies are prone to be oxidized with small activation energies. Interestingly, oxygen atoms can fill into the chalcogen vacancy sites and further maintian the electronic band structures of the perfect systems ? the band gaps and the carrier effective masses are only moderately modified by the oxygen atoms. These fundamental understandings help to improve the use of monolayer metal chalcogenides toward the development of novel 2D devices with high stability and excellent performance.},
  keywords = {air stability,chalcogen vacancy,electronic properties,Monolayer metal chalcogenides,oxidation behaviors},
  annotation = {00000  ZSCC: 0000000}
}

@article{han2014indium,
  title = {Indium {{Selenides}}: {{Structural Characteristics}}, {{Synthesis}} and {{Their Thermoelectric Performances}}},
  shorttitle = {Indium {{Selenides}}},
  author = {Han, Guang and Chen, Zhi-Gang and Drennan, John and Zou, Jin},
  year = {2014},
  journal = {Small},
  volume = {10},
  number = {14},
  pages = {2747--2765},
  issn = {1613-6829},
  doi = {10.1002/smll.201400104},
  abstract = {Indium selenides have attracted extensive attention in high-efficiency thermoelectrics for waste heat energy conversion due to their extraordinary and tunable electrical and thermal properties. This Review aims to provide a thorough summary of the structural characteristics (e.g. crystal structures, phase transformations, and structural vacancies) and synthetic methods (e.g. bulk materials, thin films, and nanostructures) of various indium selenides, and then summarize the recent progress on exploring indium selenides as high-efficiency thermoelectric materials. By highlighting challenges and opportunities in the end, this Review intends to shine some light on the possible approaches for thermoelectric performance enhancement of indium selenides, which should open up an opportunity for applying indium selenides in the next-generation thermoelectric devices.},
  copyright = {\textcopyright{} 2014 WILEY-VCH Verlag GmbH \& Co. KGaA, Weinheim},
  langid = {english},
  keywords = {In2Se3 α,In2Se3 α (2H),In2Se3 α (3R),In2Se3 α',In2Se3 β,In2Se3 β (2H),In2Se3 β (3R),In2Se3 β',In2Se3 γ,phase diagram,Raman,review article,SAED},
  annotation = {00000}
}

@article{haneef2020charge,
  title = {Charge Carrier Traps in Organic Semiconductors: A Review on the Underlying Physics and Impact on Electronic Devices},
  shorttitle = {Charge Carrier Traps in Organic Semiconductors},
  author = {Haneef, Hamna F. and Zeidell, Andrew M. and Jurchescu, Oana D.},
  year = {2020},
  month = jan,
  journal = {Journal of Materials Chemistry C},
  volume = {8},
  number = {3},
  pages = {759--787},
  publisher = {{The Royal Society of Chemistry}},
  issn = {2050-7534},
  doi = {10.1039/c9tc05695e},
  abstract = {The weak intermolecular interactions inherent in organic semiconductors make them susceptible to defect formation, resulting in localized states in the band-gap that can trap charge carriers at different timescales. Charge carrier trapping is thus ubiquitous in organic semiconductors and can have a profound impact on their performance when incorporated into optoelectronic devices. This review provides a comprehensive overview on the phenomenon of charge carrier trapping in organic semiconductors, with emphasis on the underlying physical processes and its impact on device operation. We first define the concept of charge carrier trap, then outline and categorize different origins of traps. Next, we discuss their impact on the mechanism of charge transport and the performance of electronic devices. Progress in the filed in terms of characterization and detection of charge carrier traps is reviewed together with insights on future direction of research. Finally, a discussion on the exploitation of traps in memory and sensing applications is provided.},
  langid = {english},
  keywords = {review article},
  annotation = {00000  ZSCC: 0000002}
}

@article{hao2019phase,
  title = {Phase {{Identification}} and {{Strong Second Harmonic Generation}} in {{Pure}} {$\epsilon$}-{{InSe}} and {{Its Alloys}}},
  author = {Hao, Qiaoyan and Yi, Huan and Su, Huimin and Wei, Bin and Wang, Zhuo and Lao, Zhezhu and Chai, Yang and Wang, Zhongchang and Jin, Chuanhong and Dai, Junfeng and Zhang, Wenjing},
  year = {2019},
  month = apr,
  journal = {Nano Letters},
  volume = {19},
  number = {4},
  pages = {2634--2640},
  publisher = {{American Chemical Society}},
  issn = {1530-6984},
  doi = {10.1021/acs.nanolett.9b00487},
  abstract = {Two-dimensional material indium selenide (InSe) has offered a new platform for fundamental research in virtue of its emerging fascinating properties. Unlike 2H-phase transition-metal dichalcogenides (TMDs), {$\epsilon$} phase InSe with a hexagonal unit cell possesses broken inversion symmetry in all the layer numbers, and predicted to have a strong second harmonic generation (SHG) effect. In this work, we find that the as-prepared pure InSe, alloyed InSe1\textendash xTex and InSe1\textendash xSx (x = 0.1 and 0.2) are {$\epsilon$} phase structures and exhibit excellent SHG performance from few-layer to bulk-like dimension. This high SHG efficiency is attributed to the noncentrosymmetric crystal structure of the {$\epsilon$}-InSe system, which has been clearly verified by aberration-corrected scanning transmission electron microscopy (STEM) images. The experimental results show that the SHG intensities from multilayer pure {$\epsilon$}-InSe and alloyed InSe0.9Te0.1 and InSe1\textendash xSx (x = 0.1 and 0.2) are around 1\textendash 2 orders of magnitude higher than that of the monolayer TMD systems and even superior to that of GaSe with the same thickness. The estimated nonlinear susceptibility {$\chi$}(2) of {$\epsilon$}-InSe is larger than that of {$\epsilon$}-GaSe and monolayer TMDs. Our study provides first-hand information about the phase identification of {$\epsilon$}-InSe and indicates an excellent candidate for nonlinear optical (NLO) applications as well as the possibility of engineering SHG response by alloying.},
  keywords = {InSe ε (2H),Raman,Raman peaks,SAED,second harmonic generation,STEM,XRD}
}

@article{hao2020surfacemodified,
  title = {Surface-{{Modified Ultrathin InSe Nanosheets}} with {{Enhanced Stability}} and {{Photoluminescence}} for {{High-Performance Optoelectronics}}},
  author = {Hao, Qiaoyan and Liu, Jidong and Wang, Gang and Chen, Jiewei and Gan, Haibo and Zhu, Jiaqi and Ke, Yuxuan and Chai, Yang and Lin, Junhao and Zhang, Wenjing},
  year = {2020},
  month = sep,
  journal = {ACS Nano},
  volume = {14},
  number = {9},
  pages = {11373--11382},
  publisher = {{American Chemical Society}},
  issn = {1936-0851},
  doi = {10.1021/acsnano.0c03556},
  abstract = {Indium selenide (InSe) has become a research hotspot because of its favorable carrier mobility and thickness-tunable band gap, showing great application potential in high-performance optoelectronic devices. The trend of miniaturization in optoelectronics has forced the feature sizes of the electronic components to shrink accordingly. Therefore, atomically thin InSe crystals may play an important role in future optoelectronics. Given the instability and ultralow photoluminescent (PL) emission of mechanically exfoliated ultrathin InSe, synthesis of highly stable mono- and few-layer InSe nanosheets with high PL efficiency has become crucial. Herein, ultrathin InSe nanosheets were prepared via thermal annealing of electrochemically intercalated products from bulk InSe. The size and yield of the as-prepared nanosheets were up to {$\sim$}160 {$\mu$}m and {$\sim$}70\%, respectively, and {$\sim$}80\% of the nanosheets were less than five layer. Impressively, the as-prepared nanosheets showed greatly enhanced stability and PL emission because of surface modification by carbon species. Efficient photoresponsivity of 2 A/W was achieved in the as-prepared nanosheet-based devices. These nanosheets were further assembled into large-area thin films with photoresponsivity of 16 A/W and an average Hall mobility of about 5 cm2 V\textendash 1 s\textendash 1. Finally, one-dimensional (1D) InSe nanoscrolls with a length up to 90 {$\mu$}m were constructed by solvent-assisted self-assembly of the exfoliated nanosheets.},
  keywords = {AFM,EDS,FET,flakes,FTIR,HAADF-STEM,Hall mobility,HRTEM,InSe ε (2H),mobility,photo-transport,Raman,Raman peaks,TEM,XPS}
}

@article{higashitarumizu2020purely,
  title = {Purely In-Plane Ferroelectricity in Monolayer {{SnS}} at Room Temperature},
  author = {Higashitarumizu, Naoki and Kawamoto, Hayami and Lee, Chien-Ju and Lin, Bo-Han and Chu, Fu-Hsien and Yonemori, Itsuki and Nishimura, Tomonori and Wakabayashi, Katsunori and Chang, Wen-Hao and Nagashio, Kosuke},
  year = {2020},
  month = may,
  journal = {Nature Communications},
  volume = {11},
  number = {1},
  pages = {2428},
  publisher = {{Nature Publishing Group}},
  issn = {2041-1723},
  doi = {10.1038/s41467-020-16291-9},
  abstract = {2D van der Waals ferroelectrics have emerged as an attractive building block with immense potential to provide multifunctionality in nanoelectronics. Although several accomplishments have been reported in ferroelectric switching for out-of-plane ferroelectrics down to the monolayer, a purely in-plane ferroelectric has not been experimentally validated at the monolayer thickness. Herein, an in-plane ferroelectricity is demonstrated for micrometer-size monolayer SnS at room temperature. SnS has been commonly regarded to exhibit the odd\textendash even effect, where the centrosymmetry breaks only in the odd-number layers to exhibit ferroelectricity. Remarkably, however, a robust room temperature ferroelectricity exists in SnS below a critical thickness of 15 layers with both an odd and even number of layers, suggesting the possibility of controlling the stacking sequence of multilayer SnS beyond the limit of ferroelectricity in the monolayer. This work will pave the way for nanoscale ferroelectric applications based on SnS as a platform for in-plane ferroelectrics.},
  copyright = {2020 The Author(s)},
  langid = {english},
  keywords = {SnS},
  annotation = {Bandiera\_abtest: a Cc\_license\_type: cc\_by Cg\_type: Nature Research Journals Primary\_atype: Research Subject\_term: Condensed-matter physics;Electrical and electronic engineering;Electronic devices;Materials for devices;Nanoscale materials Subject\_term\_id: condensed-matter-physics;electrical-and-electronic-engineering;electronic-devices;materials-for-devices;nanoscale-materials}
}

@article{hikami1980spinorbit,
  title = {Spin-{{Orbit Interaction}} and {{Magnetoresistance}} in the {{Two Dimensional Random System}}},
  author = {Hikami, Shinobu and Larkin, Anatoly I. and Nagaoka, Yosuke},
  year = {1980},
  month = feb,
  journal = {Progress of Theoretical Physics},
  volume = {63},
  number = {2},
  pages = {707--710},
  issn = {0033-068X},
  doi = {10/csg659},
  abstract = {Effect of the spin-orbit interaction is studied for the random potential scattering in two dimensions by the renormalization group method. It is shown that the localization behaviors are classified in the three different types depending on the symmetry. The recent observation of the negative magnetoresistance of MOSFET is discussed.},
  annotation = {02742  ZSCC: 0002742},
  file = {C\:\\Users\\ffdra\\Zotero\\storage\\JS5SHL59\\1888502.html}
}

@article{hinchet2018piezoelectric,
  title = {Piezoelectric Properties in Two-Dimensional Materials: {{Simulations}} and Experiments},
  shorttitle = {Piezoelectric Properties in Two-Dimensional Materials},
  author = {Hinchet, Ronan and Khan, Usman and Falconi, Christian and Kim, Sang-Woo},
  year = {2018},
  month = jul,
  journal = {Materials Today},
  volume = {21},
  number = {6},
  pages = {611--630},
  issn = {1369-7021},
  doi = {10.1016/j.mattod.2018.01.031},
  abstract = {The piezoelectric effect, discovered in 1880 by Jacques and Pierre Curie, effectively allows to transduce signals from the mechanical domain to the electrical domain and vice versa. For this reason, piezoelectric devices are already ubiquitous, including, for instance, quartz oscillators, mechanical actuators with sub-atomic resolution and microbalances. However, the ability to synthesize two-dimensional (2D) materials may enable the fabrication of innovative devices with unprecedented performance. For instance, many materials which are not piezoelectric in their bulk form become piezoelectric when reduced to a single atomic layer; moreover, since all the atoms belong to the surface, piezoelectricity can be effectively engineered by proper surface modifications. As additional advantages, 2D materials are strong, flexible, easy to be co-integrated with conventional integrated circuits or micro-electromechanical systems and, in comparison with bulk or quasi-1D materials, easier to be simulated at the atomistic level. Here, we review the state of the art on 2D piezoelectricity, with reference to both computational predictions and experimental characterization. Because of their unique advantages, we believe 2D piezoelectric materials will substantially expand the applications of piezoelectricity.},
  keywords = {review article},
  annotation = {00018},
  file = {C\:\\Users\\ffdra\\Zotero\\storage\\QV8GRB6V\\S1369702117306715.html}
}

@article{ho2015bending,
  title = {Bending {{Photoluminescence}} and {{Surface Photovoltaic Effect}} on {{Multilayer InSe 2D Microplate Crystals}}},
  author = {Ho, Ching-Hwa and Chu, Yun-Ju},
  year = {2015},
  month = dec,
  journal = {Advanced Optical Materials},
  volume = {3},
  number = {12},
  pages = {1750--1758},
  publisher = {{John Wiley \& Sons, Ltd}},
  issn = {2195-1071},
  doi = {10.1002/adom.201500390},
  abstract = {The bending photoluminescence (BPL) and surface photovoltaic effect of a thin multilayer InSe 2D microplate crystal are demonstrated. The BPL result shows an enhancement in light intensity (\texttimes 6) with ...},
  langid = {english},
  keywords = {HRTEM,InSe ε (2H),photoluminescence,SAED}
}

@article{ho2017highmobility,
  title = {High-{{Mobility InSe Transistors}}: {{The Role}} of {{Surface Oxides}}},
  shorttitle = {High-{{Mobility InSe Transistors}}},
  author = {Ho, Po-Hsun and Chang, Yih-Ren and Chu, Yu-Cheng and Li, Min-Ken and Tsai, Che-An and Wang, Wei-Hua and Ho, Ching-Hwa and Chen, Chun-Wei and Chiu, Po-Wen},
  year = {2017},
  month = jul,
  journal = {ACS Nano},
  volume = {11},
  number = {7},
  pages = {7362--7370},
  publisher = {{American Chemical Society}},
  issn = {1936-0851},
  doi = {10.1021/acsnano.7b03531},
  abstract = {In search of high-performance field-effect transistors (FETs) made of atomic thin semiconductors, indium selenide (InSe) has held great promise because of its high intrinsic mobility and moderate electronic band gap (1.26 eV). Yet the performance of InSe FETs is decisively determined by the surface oxidation of InSe taking place spontaneously in ambient conditions, setting up a mobility ceiling and causing an uncontrollable current hysteresis. Encapsulation by hexagonal boron nitride (h-BN) has been currently used to cope with this deterioration. Here, we provide insights into the role of surface oxides played in device performance and introduce a dry-oxidation process that forms a dense capping layer on top, where InSe FETs exhibit a record-high two-probe mobility of 423 cm2/V{$\cdot$}s at room temperature and 1006 cm2/V{$\cdot$}s at liquid nitrogen temperature without the use of h-BN encapsulation or high-{$\kappa$} dielectric screening. Ultrahigh on/off current ratio of {$>$}108 and current density of 365 {$\mu$}A/{$\mu$}m can be readily achieved without elaborate engineering of drain/source contacts or gating technique. Thickness-dependent device properties are also studied, with optimized performance shown in FETs comprising of 13 nm thick InSe. The high performance of InSe FETs with ultrathin dry oxide is attributed to the effective unpinning of the Fermi level at the metal contacts, resulting in a low Schottky barrier height of 40 meV in an optimized channel thickness.},
  keywords = {AFM,device,FET,flake,Hysteresis,InSe,metal insulator transition,mobility,Oxidation,Raman,Raman peaks,XPS}
}

@article{hormann2010dipole,
  title = {Dipole Trap Model for the Metal-Insulator Transition in Gated Silicon-Inversion Layers},
  author = {H{\"o}rmann, T. and Brunthaler, G.},
  year = {2010},
  month = nov,
  journal = {Physical Review B},
  volume = {82},
  number = {20},
  pages = {205310},
  publisher = {{American Physical Society}},
  doi = {10.1103/PhysRevB.82.205310},
  abstract = {In order to investigate the metal-insulator transition in high-mobility Si-metal-oxide-semiconductor structures, we have precised and further developed the dipole trap model as originally proposed by Altshuler and Maslov [Phys. Rev. Lett. 82, 145 (1999)]. Our additional numerical treatment enables us to drop several approximations and to introduce a limited spatial depth of the trap states inside the oxide as well as to include a distribution of trap energies. Depending on the type and width of distribution, the metallic state appears more or less pronounced as observed in experiments on samples with different quality.}
}

@book{horowitz2015art,
  title = {The {{Art}} of {{Electronics}}},
  author = {Horowitz, Paul and Hill, Winfield},
  year = {2015},
  month = apr,
  edition = {3 edition},
  publisher = {{Cambridge University Press}},
  address = {{New York, NY}},
  abstract = {At long last, here is the thoroughly revised and updated third edition of the hugely successful The Art of Electronics. It is widely accepted as the best single authoritative book on electronic circuit design. In addition to new or enhanced coverage of many topics, the third edition includes 90 oscilloscope screenshots illustrating the behavior of working circuits, dozens of graphs giving highly useful measured data of the sort that is often buried or omitted in datasheets but which you need when designing circuits, and 80 tables (listing some 1650 active components), enabling intelligent choice of circuit components by listing essential characteristics (both specified and measured) of available parts. The new Art of Electronics retains the feeling of informality and easy access that helped make the earlier editions so successful and popular. It is an indispensable reference and the gold standard for anyone, student or researcher, professional or amateur, who works with electronic circuits.},
  isbn = {978-0-521-80926-9},
  langid = {english},
  annotation = {05483}
}

@article{hou2019ain2se3,
  title = {{$\alpha$}-{{In}}{\textsubscript{2}}{{Se}}{\textsubscript{3}} {{Nanoflakes Modulated}} by {{Ferroelectric Polarization}} and {{Pt Nanodots}} for {{Photodetection}}},
  author = {Hou, Pengfei and Lv, Yang and Zhong, Xiangli and Wang, Jinbin},
  year = {2019},
  month = jul,
  journal = {ACS Applied Nano Materials},
  volume = {2},
  number = {7},
  pages = {4443--4450},
  publisher = {{American Chemical Society}},
  doi = {10.1021/acsanm.9b00840},
  abstract = {{$\alpha$}-In2Se3 is an interesting two-dimensional (2D) van der Waal s(vdW) ferroelectric material with simultaneous intercorrelated in-plane and out-of-plane polarization, and its bandgap is only about 1.3\textendash 1.4 eV, enabling the possibility of ultralow-power nanophotodetectors. However, few researchers focus on the relationship between the ferroelectric polarization and photoresponsivity for {$\alpha$}-In2Se3 based photodetectors, and finding ways to improve the on/off current ratio. In this report, {$\alpha$}-In2Se3 nanoflakes based planar devices were fabricated. We have demonstrated that the ferroelectric polarization has a great influence on the response time and on/off current ratio, and discovered that the Pt nanodots sputtered on the {$\alpha$}-In2Se3 surface could enhance the on/off current ratio to 2 \texttimes{} 109\%. The performance of {$\alpha$}-In2Se3 based planar device is very competitive comparing with the similar nanophotodetectors. All these may provide an effective way to improve the performance of nanophotodetectors, and highlight the potential of 2D vdW materials for novel nanophotodetectors.},
  keywords = {device,EDS,ferroelectric,In2Se3 α (3R),PFM,photo-transport,Raman,SEM,Switching/FTJ},
  annotation = {00002}
}

@article{hou2019resistive,
  title = {Resistive Switching Behavior in {$\alpha$}-{{In}}{\textsubscript{2}}{{Se}}{\textsubscript{3}} Nanoflakes Modulated by Ferroelectric Polarization and Interface Defects},
  author = {Hou, Pengfei and Xing, Siwei and Liu, Xin and Chen, Cheng and Zhong, Xiangli and Wang, Jinbin and Ouyang, Xiaoping},
  year = {2019},
  journal = {RSC Advances},
  volume = {9},
  number = {52},
  pages = {30565--30569},
  publisher = {{Royal Society of Chemistry}},
  doi = {10.1039/c9ra06566k},
  langid = {english},
  keywords = {device,ferroelectric,In2Se3 α (3R),PFM,Raman,Switching/FTJ},
  annotation = {00000  ZSCC: 0000000}
}

@book{hu2009modern,
  title = {Modern {{Semiconductor Devices}} for {{Integrated Circuits}}},
  author = {Hu, Chenming},
  year = {2009},
  month = mar,
  edition = {1st edition},
  publisher = {{Pearson}},
  address = {{Upper Saddle River, N.J}},
  abstract = {Modern Semiconductor Devices for Integrated Circuits, First Edition introduces readers to the world of modern semiconductor devices with an emphasis on integrated circuit applications. KEY TOPICS: Electrons and Holes in Semiconductors; Motion and Recombination of Electrons and Holes; Device Fabrication Technology; PN and Metal\textendash Semiconductor Junctions; MOS Capacitor; MOS Transistor; MOSFETs in ICs\rule{1em}{1pt}Scaling, Leakage, and Other Topics; Bipolar Transistor. MARKET: Written by an experienced teacher, researcher, and expert in industry practices, this succinct and forward-looking text is appropriate for anyone interested in semiconductor devices for integrated curcuits, and serves as a suitable reference text for practicing engineers.},
  isbn = {978-0-13-608525-6},
  langid = {english}
}

@article{hu2017peculiar,
  title = {Peculiar Electronic, Strong in-Plane and out-of-Plane Second Harmonic Generation and Piezoelectric Properties of Atom-Thick {$\alpha$}-{{M}}{\textsubscript{2}}{{X}}{\textsubscript{3}} ({{M}} = {{Ga}}, {{In}}; {{X}} = {{S}}, {{Se}}): Role of Spontaneous Electric Dipole Orientations},
  shorttitle = {Peculiar Electronic, Strong in-Plane and out-of-Plane Second Harmonic Generation and Piezoelectric Properties of Atom-Thick {$\alpha$}-{{M}} 2 {{X}} 3 ({{M}} = {{Ga}}, {{In}}; {{X}} = {{S}}, {{Se}})},
  author = {Hu, Lei and Huang, Xuri},
  year = {2017},
  journal = {RSC Advances},
  volume = {7},
  number = {87},
  pages = {55034--55043},
  doi = {10.1039/C7RA11014F},
  langid = {english},
  keywords = {band structure,computation,DFT,ferroelectric,In2Se3 α,Piezoelectric,second harmonic generation},
  annotation = {00000}
}

@article{hu2018temperaturedependent,
  title = {Temperature-Dependent Growth of Few Layer {$\beta$}-{{InSe}} and {$\alpha$}-{{In}}{\textsubscript{2}}{{Se}}{\textsubscript{3}} Single Crystals for Optoelectronic Device},
  author = {Hu, Yunxia and Feng, Wei and Dai, Mingjin and Yang, Huihui and Chen, Xiaoshuang and Liu, Guangbo and Zhang, Shichao and Hu, PingAn},
  year = {2018},
  month = oct,
  journal = {Semiconductor Science and Technology},
  volume = {33},
  number = {12},
  pages = {125002},
  publisher = {{IOP Publishing}},
  issn = {0268-1242},
  doi = {10.1088/1361-6641/aae629},
  abstract = {Controllably selective growth of two-dimensional (2D) layered single crystals plays an important role for their applications in electronic and optoelectronic devices. Among these 2D materials, indium selenide (InxSey), especially InSe and In2Se3, are typical III-VI compound semiconductors which have attracted particular attention due to their excellent electronic transport properties, photoresponse and nonlinear effect. However, controllably selective growth of 2D InSe and In2Se3 by a common method is still a great challenge due to the existence of various stoichiometric substances and crystalline phases of each substance in the indium selenide system. Here, we demonstrate a temperature-dependent chemical vapor transport (CVT) strategy to synthesize few-layer {$\beta$}-InSe and {$\alpha$}-In2Se3 single crystals at 400 \textdegree C and 450 \textdegree C on mica substrate, respectively. A few-layer {$\beta$}-InSe photodetector was fabricated, which displayed high sensitivity to a broad photoresponse range from visible light (500 nm) to near infrared light (850 nm) with a high responsivity of 2103 A W-1 and detectivity of 4.25 \texttimes{} 1012 Jones illuminated by 500 nm. Moreover, we first demonstrate the piezo-phototronic effect of 2D {$\alpha$}-In2Se3. The photodetection performance of {$\alpha$}-In2Se3 photodetector was increased by 35\% with a uniaxial tensile strain of 0.44\% under 700 nm light. Our work demonstrates that few-layer {$\beta$}-InSe and {$\alpha$}-In2Se3 single crystals can not only be synthesized selectively, but also exhibit excellent optoelectronic properties, which paves a way for their application in optoelectronic and flexible devices.},
  langid = {english},
  keywords = {device,FET,film,HRTEM,In2Se3 α,InSe β (2H),mobility,photo-transport,Raman,Raman peaks,SAET,TEM,XPS}
}

@article{hu2019roomtemperature,
  title = {Room-Temperature out-of-Plane and in-Plane Ferroelectricity of Two-Dimensional {$\beta$}-{{InSe}} Nanoflakes},
  author = {Hu, Haowen and Sun, Yilin and Chai, Maosheng and Xie, Dan and Ma, Jing and Zhu, Hongwei},
  year = {2019},
  month = jun,
  journal = {Applied Physics Letters},
  volume = {114},
  number = {25},
  pages = {252903},
  publisher = {{American Institute of Physics}},
  issn = {0003-6951},
  doi = {10.1063/1.5097842},
  abstract = {Two-dimensional (2D) layered semiconductors have shown great application potential in next generation nanoelectronic devices. The ferroelectric and piezoelectric properties of 2D semiconductors are also highly desirable in many applications, such as ferroelectric nonvolatile memory and switch. In the present work, we experimentally demonstrate the simultaneous out-of-plane and in-plane ferroelectricity of {$\beta$}-indium selenide ({$\beta$}-InSe) nanoflakes at room temperature. The polarization switching in the as-prepared {$\beta$}-InSe with the P63/mmc symmetry is studied by piezoresponse force microscopy. Out-of-plane polarization hysteresis loops are observed in a 7-nm-thick sample, and the in-plane and out-of-plane ferroelectric switching under the forward and reverse direct current bias are obtained in a 10-nm-thick sample at room temperature. These results indicate that {$\beta$}-InSe is a promising intrinsic 2D van der Waals ferroelectric material. Our work has connected the 2D materials with ferroelectric materials and inspired their applications in electronic devices.},
  keywords = {AFM,ferroelectric,InSe β (2H),PFM,Raman,Raman peaks,SAED,SEM,TEM,XPS,XRD},
  annotation = {ZSCC: 0000001}
}

@article{hu2021firstprinciples,
  title = {First-Principles Calculations of Interface Engineering for {{2D}} {$\alpha$}-{{In}}{\textsubscript{2}}{{Se}}{\textsubscript{3}}-Based van Der {{Waals}} Multiferroic Heterojunctions},
  author = {Hu, Huamin and Ouyang, Gang},
  year = {2021},
  month = apr,
  journal = {Applied Surface Science},
  volume = {545},
  pages = {149024},
  issn = {0169-4332},
  doi = {10.1016/j.apsusc.2021.149024},
  abstract = {The external electrical/light induced Schottky-to-Ohmic contact transition in van der Waals (vdW) multiferroic heterojunctions is a key technological breakthrough in the low-resistance nanodevices. However, this transition usually faces the challenge of strong Fermi level pinning effect at heterointerface. Herein, we employ density functional theory to explore the interface contact properties in {$\alpha$}-In2Se3/1T-MX2 (M~=~Mn, V, Cr; X~=~Se, Te) vdW heterojunctions, where {$\alpha$}-In2Se3 has two opposite polarization states ({$\alpha$}-P{$\uparrow$} and {$\alpha$}-P{$\downarrow$}). We find that only the case of 1T-MnSe2 maintains the initial crystal structure with being affected by electrical polarization of {$\alpha$}-In2Se3. Moreover, {$\alpha$}-In2Se3/1T-MnSe2 shows an enhanced p-type Schottky barrier in {$\alpha$}-In2Se3 with {$\alpha$}-P{$\uparrow$} state, while it can exhibit n-type Ohmic contact when {$\alpha$}-In2Se3 reverses to {$\alpha$}-P{$\downarrow$} state. Further kinetic analysis reveals that this transition is non-volatile and intrinsic. Our results provide an avenue for the design of future 2D non-volatile electronics.},
  langid = {english},
  keywords = {DFT,ferroelectric,In2Se3 α (3R)}
}

@article{hu2021outofplane,
  title = {Out-of-Plane and {{In-plane Ferroelectricity}} of {{Atom-thick Two-dimensional InSe}}},
  author = {Hu, Haowen and Wang, Huaipeng and Sun, Yilin and Li, Jiawei and Wei, Jinliang and Xie, Dan and Zhu, Hongwei},
  year = {2021},
  journal = {Nanotechnology},
  issn = {0957-4484},
  doi = {10.1088/1361-6528/ac0ac5},
  abstract = {Two-dimensional (2D) ferroelectric materials are promising substitutes of three-dimensional perovskite based ferroelectric ceramic materials. Yet most studies have been focused on the construction of non-centrosymmetric 2D van der Waals materials and only a few are constructed experimentally. Herein, we experimentally demonstrate the co-existence of voltage-tunable out-of-plane (OOP) and in-plane (IP) ferroelectricity in few-layer InSe prepared by a solution-processable method and fabricate ferroelectric semiconductor channel transistors. The reversible polarization can initiate instant switch of resistance with high ON/OFF ratios and a comparable subthreshold swing of 160 mV/dec under gate modulation. The origins of such unique OOP and IP ferroelectricity of the centrosymmetric structure are theoretically analyzed.},
  langid = {english},
  keywords = {AFM,device,DFT,ferroelectric,FeSmFET,FTJ,InSe 1T,InSe β (2H),PFM,photoluminescence,Raman,Raman angled,second harmonic generation,structural characteristics,XRD}
}

@article{huang2015reliable,
  title = {Reliable {{Exfoliation}} of {{Large-Area High-Quality Flakes}} of {{Graphene}} and {{Other Two-Dimensional Materials}}},
  author = {Huang, Yuan and Sutter, Eli and Shi, Norman N. and Zheng, Jiabao and Yang, Tianzhong and Englund, Dirk and Gao, Hong-Jun and Sutter, Peter},
  year = {2015},
  month = nov,
  journal = {ACS Nano},
  volume = {9},
  number = {11},
  pages = {10612--10620},
  issn = {1936-0851},
  doi = {10.1021/acsnano.5b04258},
  abstract = {Mechanical exfoliation has been a key enabler of the exploration of the properties of two-dimensional materials, such as graphene, by providing routine access to high-quality material. The original exfoliation method, which remained largely unchanged during the past decade, provides relatively small flakes with moderate yield. Here, we report a modified approach for exfoliating thin monolayer and few-layer flakes from layered crystals. Our method introduces two process steps that enhance and homogenize the adhesion force between the outermost sheet in contact with a substrate: Prior to exfoliation, ambient adsorbates are effectively removed from the substrate by oxygen plasma cleaning, and an additional heat treatment maximizes the uniform contact area at the interface between the source crystal and the substrate. For graphene exfoliation, these simple process steps increased the yield and the area of the transferred flakes by more than 50 times compared to the established exfoliation methods. Raman and AFM characterization shows that the graphene flakes are of similar high quality as those obtained in previous reports. Graphene field-effect devices were fabricated and measured with back-gating and solution top-gating, yielding mobilities of {$\sim$}4000 and 12 000 cm2/(V s), respectively, and thus demonstrating excellent electrical properties. Experiments with other layered crystals, e.g., a bismuth strontium calcium copper oxide (BSCCO) superconductor, show enhancements in exfoliation yield and flake area similar to those for graphene, suggesting that our modified exfoliation method provides an effective way for producing large area, high-quality flakes of a wide range of 2D materials.}
}

@article{huang2018phaseengineered,
  title = {Phase-{{Engineered Growth}} of {{Ultrathin InSe Flakes}} by {{Chemical Vapor Deposition}} for {{High-Efficiency Second Harmonic Generation}}},
  author = {Huang, Wenjuan and Gan, Lin and Li, Huiqiao and Ma, Ying and Zhai, Tianyou},
  year = {2018},
  journal = {Chemistry \textendash{} A European Journal},
  volume = {24},
  number = {58},
  pages = {15678--15684},
  issn = {1521-3765},
  doi = {10.1002/chem.201803634},
  abstract = {As a novel layered indium selenide (InSe) semiconductor has been attracting considerable interest in the field of modern (opto)-electronics. Despite current progress, the synthesis of ultrathin InSe nanoflakes still poses quite a challenge, due to its universal co-existing varied stoichiometric compounds. In this work, a novel phase-engineered route is proposed for synthesizing ultrathin single-crystalline InSe nanoflakes with the assistance of a stable mass-transfer process in a space-confined chemical vapor deposition (CVD) system. By finely tuning the growth parameters, InSe can be obtained through engineering a phase-transition thereby eliminating the undesirable In2Se3 phase, revealed by the synergistic effect of high-content H2 and deficient Se. Furthermore, owing to the non-centrosymmetric structure, the CVD-grown InSe nanoflakes exhibit a high-performance second harmonic generation (SHG), making it very promising for future SHG applications in 2D configurations. This approach paves the way for the synthesis of other similar ultrathin materials with multiphase homologous compounds.},
  copyright = {\textcopyright{} 2018 Wiley-VCH Verlag GmbH \& Co. KGaA, Weinheim},
  langid = {english},
  keywords = {Band gap,film,InSe ε (2H),Raman,Raman peaks,second harmonic generation}
}

@article{hunter2013observation,
  title = {Observation of {{Unusual}}, {{Highly Conductive Grain Boundaries}} in {{High-Mobility Phase Separated Organic Semiconducting Blend Films Probed}} by {{Lateral-Transport Conductive-AFM}}},
  author = {Hunter, Simon and Anthopoulos, Thomas D.},
  year = {2013},
  journal = {Advanced Materials},
  volume = {25},
  number = {31},
  pages = {4320--4326},
  issn = {1521-4095},
  doi = {10.1002/adma.201300020},
  abstract = {The effect of grain boundaries in high hole mobility organic blend films of diF-TES ADT:PTAA is evaluated using conductive-AFM measurements revealing the presence of unusually conductive grain boundaries. The latter characteristic has not been reported previously for any other organic semiconducting film system and is believed to underpin the excellent and morphology-independent hole transport characteristics seen in these composite films.},
  copyright = {Copyright \textcopyright{} 2013 WILEY-VCH Verlag GmbH \& Co. KGaA, Weinheim},
  keywords = {charge transport,conductive AFM,grain boundary,organic blend semiconductors,organic transistors}
}

@article{ievlev2019nonconventional,
  title = {Non-Conventional Mechanism of Ferroelectric Fatigue via Cation Migration},
  author = {Ievlev, Anton V. and Kc, Santosh and Vasudevan, Rama K. and Kim, Yunseok and Lu, Xiaoli and Alexe, Marin and Cooper, Valentino R. and Kalinin, Sergei V. and Ovchinnikova, Olga S.},
  year = {2019},
  month = jul,
  journal = {Nature Communications},
  volume = {10},
  number = {1},
  pages = {1--8},
  publisher = {{Nature Publishing Group}},
  issn = {2041-1723},
  doi = {10.1038/s41467-019-11089-w},
  abstract = {Ferroelectric fatigue degrades ferroelectric properties upon polarization cycling, but its underlying chemistry is poorly understood. Here, the authors show by multimodal chemical imaging that fatigue in PbZr0.2Ti0.8O3 thin films is associated with Cu\,+\,ions migration from the electrode into the film structure.},
  copyright = {2019 This is a U.S. government work and not under copyright protection in the U.S.; foreign copyright protection may apply},
  langid = {english},
  annotation = {00000  ZSCC: 0000002}
}

@article{igo2018anharmonic,
  title = {Anharmonic {{Phonon Coupling}} in {{Single-Crystal Semiconducting}} and {{Metal-Like}} van Der {{Waals In}}{\textsubscript{2}}{{Se}}{\textsubscript{3}}},
  author = {Igo, John and Zhou, Shengwen and Yu, Zhi-Gang and Amnuayphol, Oliver Peter and Zhao, Feng and Gu, Yi},
  year = {2018},
  month = oct,
  journal = {The Journal of Physical Chemistry C},
  volume = {122},
  number = {40},
  pages = {22849--22855},
  issn = {1932-7447},
  doi = {10.1021/acs.jpcc.8b06247},
  abstract = {We study the anharmonic phonon interactions in the single-crystal semiconducting ({$\alpha$}) and metal-like ({$\beta$}) van der Waals In2Se3 layers, through the determination and analysis of temperature-dependent Raman spectra and thermal conductivities, supported by first-principles calculations of phonon band structures. Our results indicate strong lattice anharmonicity in {$\beta$}-In2Se3 giving rise to significant phonon peak broadening and a suppressed lattice thermal conductivity and reveal that the anharmonic phonon interactions are the main thermal transport-limiting mechanism in both phases. The low thermal conductivity combined with a large electrical conductivity makes the metal-like {$\beta$}-In2Se3 a potential efficient thermoelectric material.},
  keywords = {device,In2Se3 α (3R),In2Se3 β,metal insulator transition,phase transition,Raman,Raman peaks,Temperature dependence},
  annotation = {00001}
}

@article{island2015gate,
  title = {Gate {{Controlled Photocurrent Generation Mechanisms}} in {{High-Gain In}}{\textsubscript{2}}{{Se}}{\textsubscript{3}} {{Phototransistors}}},
  author = {Island, J. O. and Blanter, S. I. and Buscema, M. and {van der Zant}, H. S. J. and {Castellanos-Gomez}, A.},
  year = {2015},
  month = dec,
  journal = {Nano Letters},
  volume = {15},
  number = {12},
  pages = {7853--7858},
  publisher = {{American Chemical Society}},
  issn = {1530-6984},
  doi = {10.1021/acs.nanolett.5b02523},
  abstract = {Photocurrent in photodetectors incorporating van der Waals materials is typically produced by a combination of photocurrent generation mechanisms that occur simultaneously during operation. Because of this, response times in these devices often yield to slower, high gain processes, which cannot be turned off. Here we report on photodetectors incorporating the layered material In2Se3, which allow complete modulation of a high gain, photogating mechanism in the ON state in favor of fast photoconduction in the OFF state. While photoconduction is largely gate independent, photocurrent from the photogating effect is strongly modulated through application of a back gate voltage. By varying the back gate, we demonstrate control over the dominant mechanism responsible for photocurrent generation. Furthermore, because of the strong photogating effect, these direct-band gap, multilayer phototransistors produce ultrahigh gains of (9.8 {$\pm$} 2.5) \texttimes{} 104 A/W and inferred detectivities of (3.3 {$\pm$} 0.8) \texttimes{} 1013 Jones, putting In2Se3 among the most sensitive 2D materials for photodetection studied to date.},
  keywords = {charge trapping,device,In2Se3 α,photo-transport,Raman},
  annotation = {ZSCC: 0000151}
}

@article{jacobs-gedrim2014extraordinary,
  title = {Extraordinary {{Photoresponse}} in {{Two-Dimensional In}}{\textsubscript{2}}{{Se}}{\textsubscript{3}} {{Nanosheets}}},
  author = {{Jacobs-Gedrim}, Robin B. and Shanmugam, Mariyappan and Jain, Nikhil and Durcan, Christopher A. and Murphy, Michael T. and Murray, Thomas M. and Matyi, Richard J. and Moore, Richard L. and Yu, Bin},
  year = {2014},
  month = jan,
  journal = {ACS Nano},
  volume = {8},
  number = {1},
  pages = {514--521},
  publisher = {{American Chemical Society}},
  issn = {1936-0851},
  doi = {10.1021/nn405037s},
  abstract = {We demonstrate extraordinary photoconductive behavior in two-dimensional (2D) crystalline indium selenide (In2Se3) nanosheets. Photocurrent measurements reveal that semiconducting In2Se3 nanosheets have an extremely high response to visible light, exhibiting a photoresponsivity of 3.95 \texttimes{} 102 A{$\cdot$}W\textendash 1 at 300 nm with an external quantum efficiency greater than 1.63 \texttimes{} 105 \% at 5 V bias. The key figures-of-merit exceed that of graphene and other 2D material-based photodetectors reported to date. In addition, the photodetector has a fast response time of 1.8 \texttimes{} 10\textendash 2 s and a specific detectivity of 2.26 \texttimes{} 1012 Jones. The photoconductive response of {$\alpha$}-In2Se3 nanosheets extends into ultraviolet, visible, and near-infrared spectral regions. The high photocurrent response is attributed to the direct band gap (EG = 1.3 eV) of In2Se3 combined with a large surface-area-to-volume ratio and a self-terminated/native-oxide-free surface, which help to reduce carrier recombination while keeping fast response, allowing for real-time detection under very low-light conditions.},
  keywords = {In2Se3 α},
  annotation = {00000  ZSCC: 0000231}
}

@article{jasinski2002crystal,
  title = {Crystal Structure of {$\kappa$}-{{In}}{\textsubscript{2}}{{Se}}{\textsubscript{3}}},
  author = {Jasinski, J. and Swider, W. and Washburn, J. and {Liliental-Weber}, Z. and Chaiken, A. and Nauka, K. and Gibson, G. A. and Yang, C. C.},
  year = {2002},
  month = nov,
  journal = {Applied Physics Letters},
  volume = {81},
  number = {23},
  pages = {4356--4358},
  publisher = {{American Institute of Physics}},
  issn = {0003-6951},
  doi = {10.1063/1.1526925},
  keywords = {In2Se3 κ},
  annotation = {00000  ZSCC: NoCitationData[s0]}
}

@article{jessen2018quantitative,
  title = {Quantitative Optical Mapping of Two-Dimensional Materials},
  author = {Jessen, Bjarke S. and Whelan, Patrick R. and Mackenzie, David M. A. and Luo, Birong and Thomsen, Joachim D. and Gammelgaard, Lene and Booth, Timothy J. and B{\o}ggild, Peter},
  year = {2018},
  month = apr,
  journal = {Scientific Reports},
  volume = {8},
  number = {1},
  pages = {1--8},
  issn = {2045-2322},
  doi = {10.1038/s41598-018-23922-1},
  abstract = {The pace of two-dimensional materials (2DM) research has been greatly accelerated by the ability to identify exfoliated thicknesses down to a monolayer from their optical contrast. Since this process requires time-consuming and error-prone manual assignment to avoid false-positives from image features with similar contrast, efforts towards fast and reliable automated assignments schemes is essential. We show that by modelling the expected 2DM contrast in digitally captured images, we can automatically identify candidate regions of 2DM. More importantly, we show a computationally-light machine vision strategy for eliminating false-positives from this set of 2DM candidates through the combined use of binary thresholding, opening and closing filters, and shape-analysis from edge detection. Calculation of data pyramids for arbitrarily high-resolution optical coverage maps of two-dimensional materials produced in this way allows the real-time presentation and processing of this image data in a zoomable interface, enabling large datasets to be explored and analysed with ease. The result is that a standard optical microscope with CCD camera can be used as an analysis tool able to accurately determine the coverage, residue/contamination concentration, and layer number for a wide range of presented 2DMs.},
  copyright = {2018 The Author(s)},
  langid = {english},
  annotation = {00000}
}

@article{jiang2019coexistence,
  title = {The Coexistence of Ferroelectricity and Topological Phase Transition in Monolayer {$\alpha$}-{{In}}{\textsubscript{2}}{{Se}}{\textsubscript{3}} under Strain Engineering},
  author = {Jiang, Xingxing and Feng, Yexin and Chen, Ke-Qiu and Tang, Li-Ming},
  year = {2019},
  month = dec,
  journal = {Journal of Physics: Condensed Matter},
  volume = {32},
  number = {10},
  pages = {105501},
  publisher = {{IOP Publishing}},
  issn = {0953-8984},
  doi = {10.1088/1361-648x/ab58f1},
  abstract = {The coexistence of ferroelectricity and topological phase transition in monolayer {$\alpha$}-In2Se3 through strain engineering are investigated by first-principles calculation. The results show that with the spontaneous polarization increasing, the transition barrier decreases, approximately linearly related to the applied strain, and the effect of biaxial compressive strain within the in-plane is two orders of magnitude greater than that of tensile strain along the out-of-plane. The results also show that a Dirac cone with a linear dispersion relationship occurs at the high symmetry {$\Gamma$} point within the Brillouin region whatever strain pattern is applied. By analyzing the orbital characters of the electronic states near the Fermi level we find that the electronic structure presents obvious topological phase transition, indicating that monolayer {$\alpha$}-In2Se3 is not only an excellent 2D ferroelectric material but also a topological material.},
  langid = {english},
  keywords = {band structure,computation,DOS,ferroelectric,In2Se3 α,strain,VASP},
  annotation = {00000  ZSCC: NoCitationData[s0]}
}

@article{jiang2019construction,
  title = {Construction of {{In}}{\textsubscript{2}}{{Se}}{\textsubscript{3}}/{{MoS}}{\textsubscript{2}} Heterojunction as Photoanode toward Efficient Photoelectrochemical Water Splitting},
  author = {Jiang, Yan and Wang, Qi and Han, Lu and Zhang, Xiangyong and Jiang, Liangxing and Wu, Zhuangzhi and Lai, Yanqing and Wang, Dezhi and Liu, Fangyang},
  year = {2019},
  month = feb,
  journal = {Chemical Engineering Journal},
  volume = {358},
  pages = {752--758},
  issn = {1385-8947},
  doi = {10.1016/j.cej.2018.10.088},
  abstract = {{$\kappa$}-In2Se3, a rarely reported phase of indium selenide, is synthesized here using a hot-injection method. The hexagonal nanoplates show photoresponses at positive bias, thus is considered as a potential material for photoanode utilization. In order to further improve the photoelectrocatalytic performance of {$\kappa$}-In2Se3, MoS2 nanopetals are introduced by a solution-based ultrasonic method. The In2Se3/MoS2 heterojunction exhibits a significantly higher photocurrent density and higher PEC O2 evolution amount than those of pristine In2Se3. PL test shows that the charge separation is promoted, due to numerous p-n junctions formed at the interfaces of In2Se3/MoS2. This led to more efficient utilization of photogenerated electron-hole pairs. Moreover, the charge transfer resistance is greatly reduced by the cooperative interaction of the two materials.},
  langid = {english},
  keywords = {Heterostructure,In2Se3 κ},
  annotation = {00000  ZSCC: 0000008}
}

@article{jiang2019stable,
  title = {Stable {{InSe}} Transistors with High-Field Effect Mobility for Reliable Nerve Signal Sensing},
  author = {Jiang, Jianfeng and Li, Jingxin and Li, Yutao and Duan, Jiazhzhi and Li, Linshen and Tian, Ye and Zong, Zhihua and Zheng, Haotian and Feng, Xianjin and Li, Qiqiang and Liu, Hong and Zhang, Yu and Ren, Tian-Ling and Han, Lin},
  year = {2019},
  month = jul,
  journal = {npj 2D Materials and Applications},
  volume = {3},
  number = {1},
  pages = {1--8},
  publisher = {{Nature Publishing Group}},
  issn = {2397-7132},
  doi = {10.1038/s41699-019-0110-x},
  abstract = {Among two-dimensional layered semiconductors, indium selenide (InSe) is one of the most promising materials with absolute advantages in field-effect transistors (FETs) because of its high electron mobility and stable material properties. Some work has been performed to improve the mobility of InSe FETs. However, in practical applications, electrical stability of FETs is another essential factor to guarantee the performance of the electronic system. Here, we show a highly stable InSe FET with a field-effect mobility of 1200\,cm2/V{$\cdot$}s in the practical working regime. The bottom-gate staggered InSe FET was fabricated with a polymethyl methacrylate (PMMA)/HfO2 dual-layer gate dielectric and PMMA back-channel encapsulation. The hysteresis was maintained at 0.4\,V after 30 days of storage under normal ambient conditions, and the threshold voltage shift was retained at 0.6\,V with a gate stress VGS of 10\,V, which represents the best electrical stability reported to date. Its high mobility and electrical stability enable reliable detection of the weak nerve action potential at a low power consumption. High-performance InSe FETs expand their promising applications in flexible and in situ real-time intelligent nerve action potential recording.},
  copyright = {2019 The Author(s)},
  langid = {english},
  keywords = {device,DFT,flake,Heterostructure,HfO2,InSe,Memristor,mobility,PMMA,Raman,Raman peaks,SEM,TEM,XRD},
  annotation = {ZSCC: 0000000[s0]}
}

@article{jin2019physical,
  title = {On the {{Physical Mechanism}} of {{Transient Negative Capacitance Effect}} in {{Deep Subthreshold Region}}},
  author = {Jin, Chengji and Saraya, Takuya and Hiramoto, Toshiro and Kobayashi, Masaharu},
  year = {2019},
  journal = {IEEE Journal of the Electron Devices Society},
  volume = {7},
  pages = {368--374},
  issn = {2168-6734},
  doi = {10.1109/JEDS.2019.2899727},
  abstract = {We have investigated the physical mechanism of steep subthreshold slope (SS) in ferroelectric FET (FeFET) based on a dynamic ferroelectric (FE) model without traversing the negative capacitance (NC) region of the S-shaped polarization-voltage predicted by Landau theory. The dynamic FE model is applied to an FE-dielectric (FE-DE) series capacitor as well as FeFET after calibration and verification by transient measurement of an FE-HfO2 capacitor. By investigating current through the FE-DE series capacitor and the gate capacitor of FeFET, we find that incomplete screening of spontaneous polarization charge results in transient NC and sub-60 mV/dec SS. Also, it should be noted that, for FeFET, small depletion layer capacitance has an important role to cause strong depolarization effect and thus steep SS. Moreover, reverse drain induced barrier lowering happens even with this FE model. The model presented in this paper provides a reasonable interpretation for the previously reported steep SS of NC FETs.},
  keywords = {Capacitance,Capacitors,Computational modeling,ferroelectric,Iron,Logic gates,negative capacitance (NC),Steep subthreshold slope (SS),Switches,Transient analysis}
}

@article{jin2019raman,
  title = {Raman Interrogation of the Ferroelectric Phase Transition in Polar Metal {{LiOsO}}{\textsubscript{3}}},
  author = {Jin, Feng and Wang, Le and Zhang, Anmin and Ji, Jianting and Shi, Youguo and Wang, Xiaoqun and Yu, Rong and Zhang, Jiandi and Plummer, E. W. and Zhang, Qingming},
  year = {2019},
  month = oct,
  journal = {Proceedings of the National Academy of Sciences},
  volume = {116},
  number = {41},
  pages = {20322--20327},
  publisher = {{National Academy of Sciences}},
  issn = {0027-8424, 1091-6490},
  doi = {10.1073/pnas.1908956116},
  abstract = {{$<$}p{$>$}Ferroelectric (FE) distortions in a metallic material were believed to be experimentally inaccessible because itinerant electrons would screen the long-range Coulomb interactions that favor a polar structure. It has been suggested by Anderson and Blount [P. W. Anderson, E. I. Blount, \emph{Phys. Rev. Lett.} 14, 217-219 (1965)] that a transition from paraelectric phase to FE phase is possible for a metal if, in the paraelectric phase, the electrons at the Fermi level are decoupled from the soft transverse optical phonons, which lead to ferroelectricity. Here, using Raman spectroscopy combined with magnetotransport measurements on a recently discovered FE metal LiOsO\textsubscript{3}, we demonstrate active interplay of itinerant electrons and the FE order: Itinerant electrons cause strong renormalization of the FE order parameter, leading to a more gradual transition in LiOsO\textsubscript{3} than typical insulating FEs. In return, the FE order enhances the anisotropy of charge transport between parallel and perpendicular to the polarization direction. The temperature-dependent evolution of Raman active in-plane \textsuperscript{3}E\textsubscript{g} phonon, which strongly couples to the polar-active out-of-the-plane A\textsubscript{2u} phonon mode in the high-temperature paraelectric state, exhibits a deviation in Raman shift from the expectation of the pseudospin-phonon model that is widely used to model many insulating FEs. The Curie-Weiss temperature (\texttheta{} {$\approx$} 97 K) obtained from the optical susceptibility is substantially lower than \emph{T}\textsubscript{s}, suggesting a strong suppression of FE fluctuations. Both line width and Fano line shape of \textsuperscript{3}E\textsubscript{g} Raman mode exhibit a strong electron-phonon coupling in the high-temperature paraelectric phase, which disappears in the FE phase, challenging Anderson/Blount's proposal for the formation of FE metals.{$<$}/p{$>$}},
  chapter = {Physical Sciences},
  copyright = {Copyright \textcopyright{} 2019 the Author(s). Published by PNAS.. https://creativecommons.org/licenses/by-nc-nd/4.0/This open access article is distributed under Creative Commons Attribution-NonCommercial-NoDerivatives License 4.0 (CC BY-NC-ND).},
  langid = {english},
  pmid = {31548417},
  keywords = {ferroelectric phase transition,itinerant electrons,polar metal,Raman},
  annotation = {00000  ZSCC: 0000000}
}

@article{jin2020physical,
  title = {Physical {{Mechanisms}} of {{Reverse DIBL}} and {{NDR}} in {{FeFETs With Steep Subthreshold Swing}}},
  author = {Jin, Chengji and Saraya, Takuya and Hiramoto, Toshiro and Kobayashi, Masaharu},
  year = {2020},
  journal = {IEEE Journal of the Electron Devices Society},
  volume = {8},
  pages = {429--434},
  issn = {2168-6734},
  doi = {10.1109/JEDS.2020.2986345},
  abstract = {We have investigated transient Id - Vg and Id - Vd characteristics of ferroelectric field-effect transistor (FeFET) by simulation with ferroelectric model considering polarization switching dynamics. We show transient negative capacitance (TNC) with polarization reversal and depolarization effect can result in sub-60mV/dec subthreshold swing (SS), reverse drain-induced barrier lowering (R-DIBL), and negative differential resistance (NDR) without traversing the quasi-static negative capacitance (QSNC) region of the S-shaped polarization-voltage (P - V) predicted by single-domain Landau theory. Moreover, the mechanisms of R-DIBL and NDR based on the TNC theory are discussed in detail. The results demonstrated in this work can be a possible explanation for the mechanism of previously reported negative capacitance field-effect transistor (NCFET) with sub-60mV/dec SS, R-DIBL, and NDR.},
  keywords = {Capacitance,Capacitors,Ferroelectric,FET,Logic gates,MOSFET,negative capacitance,Switches,Transient analysis}
}

@article{juan2004temperature,
  title = {Temperature Dependence of the Current Conduction Mechanisms in Ferroelectric {{Pb}}({{Zr}}{\textsubscript{0.53}},{{Ti}}{\textsubscript{0.47}}){{O}}{\textsubscript{3}} Thin Films},
  author = {Juan, Trevor Pi-chun and Chen, Si-min and Lee, Joseph Ya-min},
  year = {2004},
  month = mar,
  journal = {Journal of Applied Physics},
  volume = {95},
  number = {6},
  pages = {3120--3125},
  publisher = {{American Institute of Physics}},
  issn = {0021-8979},
  doi = {10.1063/1.1646441}
}

@article{julien1986electrical,
  title = {Electrical and Optical Properties of {{In}}{\textsubscript{2}}{{Se}}{\textsubscript{3}} Thin Films},
  author = {Julien, C. and Eddrief, M. and Kambas, K. and Balkanski, M.},
  year = {1986},
  month = mar,
  journal = {Thin Solid Films},
  volume = {137},
  number = {1},
  pages = {27--37},
  issn = {0040-6090},
  doi = {10.1016/0040-6090(86)90191-4},
  abstract = {In2Se3 thin films were grown with good stoichiometry at a substrate temperature around 460 K in the {$\alpha$} phase and were shown to remain in the {$\beta$} phase above 480 K. The Hall coefficient and the d.c. conductivity of polycrystalline In2Se3 films grown on Pyrex and mica substrates were studied in the temperature range 77\textendash 530 K. After thermal treatment above 473 K of the {$\alpha$} phase thin film, the electrical resistivity decreased and the sample remained in an irreversible phase. This is explained in terms of structural changes at high temperatures. The mobility behaviour of the {$\beta$} phase annealed thin films is illustrated. We use the Petritz barrier model to explain the activation energy of the mobility as due to the grain boundaries of the polycrystallites. The optical properties (refractive index and absorption coefficient) are also reported. The direct band gaps of In2Se3 thin films are 1.43 eV and 1.55 eV for the {$\alpha$} phase and {$\beta$} phase respectively. These values are obtained from transmission measurements and are confirmed through photoconductivity measurements.},
  langid = {english},
  annotation = {00122}
}

@inproceedings{jung2020impact,
  title = {Impact of Interface Layer on Charge Trapping in {{Si}}:{{HfO}}{\textsubscript{2}} Based {{FeFET}}},
  shorttitle = {Impact of Interface Layer on Charge Trapping in {{Si}}},
  booktitle = {2020 {{IEEE International Integrated Reliability Workshop}} ({{IIRW}})},
  author = {Jung, Taehwan and O'Sullivan, Barry and Ronchi, Nicol{\`o} and Linten, Dimitri and Shin, Changhwan and Houdt, Jan Van},
  year = {2020},
  month = oct,
  pages = {1--6},
  issn = {2374-8036},
  doi = {10.1109/IIRW49815.2020.9312866},
  abstract = {The impact of interface layer on charge trapping and polarization switching at multiple temperatures is investigated. At high temperature, the FeFET with metal-ferroelectric-insulator-semiconductor (MFIS) gate-stack shows conventional electrontrapping dominated PBTI (i.e. {$\Delta$}Vt {$>$} 0), whereas at room temperature, negative threshold voltage shifts ({$\Delta$}Vt) are observed. We demonstrate a link between interface layer and the subsequently-deposited ferroelectric layers effective permittivity: higher permittivity, consistent with higher tetragonal phase/ lower orthorhombic phase content is seen when the ferroelectric layer is deposited on hydrogen terminated silicon, whereas anomalous BTI consistent with higher orthorhombic phase is observed when the ferroelectric is deposited on oxygen-rich (SiO2, SiON) surfaces.},
  keywords = {carrier mobility,effective permittivity,Electric fields,FeFETs,Permittivity,polarization switching,Silicon,Stress,Switches,threshold voltage,Threshold voltage,Trapping}
}

@article{kalinin2018surfacescreening,
  title = {Surface-Screening Mechanisms in Ferroelectric Thin Films and Their Effect on Polarization Dynamics and Domain Structures},
  author = {Kalinin, Sergei V. and Kim, Yunseok and Fong, Dillon D. and Morozovska, Anna N.},
  year = {2018},
  month = jan,
  journal = {Reports on Progress in Physics},
  volume = {81},
  number = {3},
  pages = {036502},
  publisher = {{IOP Publishing}},
  issn = {0034-4885},
  doi = {10.1088/1361-6633/aa915a},
  abstract = {For over 70 years, ferroelectric materials have been one of the central research topics for condensed matter physics and material science, an interest driven both by fundamental science and applications. However, ferroelectric surfaces, the key component of ferroelectric films and nanostructures, still present a significant theoretical and even conceptual challenge. Indeed, stability of ferroelectric phase per se necessitates screening of polarization charge. At surfaces, this can lead to coupling between ferroelectric and semiconducting properties of material, or with surface (electro) chemistry, going well beyond classical models applicable for ferroelectric interfaces. In this review, we summarize recent studies of surface-screening phenomena in ferroelectrics. We provide a brief overview of the historical understanding of the physics of ferroelectric surfaces, and existing theoretical models that both introduce screening mechanisms and explore the relationship between screening and relevant aspects of ferroelectric functionalities starting from phase stability itself. Given that the majority of ferroelectrics exist in multiple-domain states, we focus on local studies of screening phenomena using scanning probe microscopy techniques. We discuss recent studies of static and dynamic phenomena on ferroelectric surfaces, as well as phenomena observed under lateral transport, light, chemical, and pressure stimuli. We also note that the need for ionic screening renders polarization switching a coupled physical\textendash electrochemical process and discuss the non-trivial phenomena such as chaotic behavior during domain switching that stem from this.},
  langid = {english}
}

@article{kambas1982preparation,
  title = {Preparation and Some Optical and Electrical Measurements of a New Phase {$\alpha$}'-{{In}}{\textsubscript{2}}{{Se}}{\textsubscript{3}}},
  author = {Kambas, K. and Julien, C.},
  year = {1982},
  month = dec,
  journal = {Materials Research Bulletin},
  volume = {17},
  number = {12},
  pages = {1573--1579},
  issn = {0025-5408},
  doi = {10.1016/0025-5408(82)90214-8},
  abstract = {A new phase of the compound In2Se3 can be found stable at room temperature. The conditions of preparation of this {$\alpha{'}$}-In2Se3 phase are described. Far infrared and light scattering spectra are investigated at room temperature and the results were analysed by the methods of Kramers-Kro\&\#x030B;nig and Lorentz. The temperature dependence of the conductivity shows that this phase is an insulator while the normal {$\alpha$}-phase shows a metallic character.},
  langid = {english},
  keywords = {In2Se3 α',In2Se3 γ}
}

@article{kambas1984raman,
  title = {Raman Spectra of {$\alpha$}- and {$\gamma$}-{{In}}{\textsubscript{2}}{{Se}}{\textsubscript{3}}},
  author = {Kambas, K. and Julien, C. and Jouanne, M. and Likforman, A. and Guittard, M.},
  year = {1984},
  month = aug,
  journal = {Physica Status Solidi B, Basic Research},
  volume = {124},
  number = {2},
  pages = {K105-K108},
  address = {{German Democratic Republic}},
  issn = {0370-1972},
  doi = {10.1002/pssb.2221240241},
  abstract = {The results of Raman spectra of {$\alpha$}-In2Se3 together with those of the {$\gamma$}-phase are presented for the first time Four normal modes of vibration are observed for {$\alpha$}-In2Se3 and twelve for {$\gamma$}-In2Se3 The frequencies are listed together with TO and LO frequencies from FIR spectra Comparing the FIR and Raman data of {$\gamma$}-In2Se3 one can see that for the four high-frequency modes there is an almost exact coincidence This fact confirms the suggestion for the possible point group of this polymorphic material}
}

@article{kang2006electrical,
  title = {Electrical Characteristics of Pentacene-Based Thin Film Transistor with Conducting Poly(3,4-Ethylenedioxythiophene) Electrodes},
  author = {Kang, H. S. and Lee, J. W. and Kim, M. K. and Joo, J. and Ko, J. M. and Lee, J. Y.},
  year = {2006},
  month = sep,
  journal = {Journal of Applied Physics},
  volume = {100},
  number = {6},
  pages = {064508},
  publisher = {{American Institute of Physics}},
  issn = {0021-8979},
  doi = {10.1063/1.2349553},
  abstract = {This is a report on the fabrication and electrical characteristics of an all-organic-based thin film transistor that uses conducting poly(3,4-ethylenedioxythiophene) (PEDOT) as electrodes. The conducting PEDOT layers as source, drain, and gate electrodes were patterned by using photolithography. The poly(vinyl cinnamate) (PVCN) was spin coated and cross-linked as a gate insulator. The pentacene as an active layer was vapor deposited onto the PVCN layer. In order to compare the characteristics of the pentacene-based organic thin film transistor (OTFT) with PEDOT electrodes, we fabricated another pentacene-based OTFT using a Si-based pattern with Au electrodes. The electrical characteristics of the devices, such as charge carrier mobility  ({$\mu$}) ({$\mu$}) , threshold voltage  ( V th ) (Vth) , and on/off current ratio  ( I on/off ) (Ion/off) , were measured from its current-voltage  (I-V) (I-V)  characteristic curves. The  {$\mu$} {$\mu$} ,  V th Vth , and  I on/off Ion/off  of the pentacene-based OTFT with PEDOT electrodes were  {$\sim$}2.3\texttimes{} 10 -3 cm 2 /Vs {$\sim$}2.3\texttimes 10-3cm2/Vs ,  4V 4V , and  {$\sim$}100 {$\sim$}100 , respectively. We evaluated the activation energy  ( E a ) (Ea)  of the pentacene layer of the OTFT devices by analyzing the transfer characteristic curves measured in a temperature range from  10to300K 10to300K  based on the multitrap and release model. The  E a Ea  of the OTFT with PEDOT electrodes was measured to be  {$\sim$}0.33eV {$\sim$}0.33eV , in the saturation region. This energy was larger than that of the OTFT with Au electrodes which was measured to be  {$\sim$}0.13eV {$\sim$}0.13eV . However, the  {$\mu$} {$\mu$} 's of both OTFTs were almost the same, in spite of the relatively lower electrical conductivity of the PEDOT and the larger  E a Ea  of the OTFT with the PEDOT electrodes. From the results of temperature dependence of current density based on the Schottky emission model, we analyze that the lower barrier height between the PEDOT electrode and the pentacene active layer resulted in easier charge injection from the PEDOT electrode into the active layer.}
}

@article{kang2014thermally,
  title = {Thermally {{Phase-Transformed In}}{\textsubscript{2}}{{Se}}{\textsubscript{3}} {{Nanowires}} for {{Highly Sensitive Photodetectors}}},
  author = {Kang, Daegun and Rim, Taiuk and Baek, Chang-Ki and Meyyappan, M. and Lee, Jeong-Soo},
  year = {2014},
  journal = {Small},
  volume = {10},
  number = {18},
  pages = {3795--3802},
  issn = {1613-6829},
  doi = {10/f2sptd},
  abstract = {The photoresponse characteristics of In2Se3 nanowire photodetectors with the {$\kappa$}-phase and {$\alpha$}-phase structures are investigated. The as-grown {$\kappa$}-phase In2Se3 nanowires by the vapor-liquid-solid technique are phase-transformed to the {$\alpha$}-phase nanowires by thermal annealing. The photoresponse performances of the {$\kappa$}-phase and {$\alpha$}-phase In2Se3 nanowire photodetectors are characterized over a wide range of wavelengths (300\textendash 900 nm). The phase of the nanowires is analyzed using a high-resolution transmission microscopy equipped with energy dispersive X-ray spectroscopy and X-ray diffraction. The electrical conductivity and photoresponse characteristics are significantly enhanced in the {$\alpha$}-phase due to smaller bandgap structure compared to the {$\kappa$}-phase nanowires. The spectral responsivities of the {$\alpha$}-phase devices are 200 times larger than those of the {$\kappa$}-phase devices. The superior performance of the thermally phase-transformed In2Se3 nanowire devices offers an avenue to develop highly sensitive photodetector applications.},
  copyright = {\textcopyright{} 2014 WILEY-VCH Verlag GmbH \& Co. KGaA, Weinheim},
  langid = {english},
  keywords = {In2Se3 α,In2Se3 κ,phase transition},
  annotation = {00000}
}

@article{kang2015highmobility,
  title = {High-Mobility Three-Atom-Thick Semiconducting Films with Wafer-Scale Homogeneity},
  author = {Kang, Kibum and Xie, Saien and Huang, Lujie and Han, Yimo and Huang, Pinshane Y. and Mak, Kin Fai and Kim, Cheol-Joo and Muller, David and Park, Jiwoong},
  year = {2015},
  month = apr,
  journal = {Nature},
  volume = {520},
  number = {7549},
  pages = {656--660},
  publisher = {{Nature Publishing Group}},
  issn = {1476-4687},
  doi = {10.1038/nature14417},
  abstract = {A new chemical vapour deposition method enables transition-metal dichalcogenide (TMD) monolayers to be grown directly on insulating silicon dioxide wafers, demonstrating the possibility of wafer-scale batch fabrication of high-performance devices with TMD monolayers.},
  langid = {english},
  annotation = {Bandiera\_abtest: a Cg\_type: Nature Research Journals Primary\_atype: Research Subject\_term: Two-dimensional materials Subject\_term\_id: two-dimensional-materials}
}

@article{kang2017calculated,
  title = {Calculated Carrier Mobility of H-{{BN}}/{$\gamma$}-{{InSe}}/h-{{BN}} van Der {{Waals}} Heterostructures},
  author = {Kang, P. and {Michaud-Rioux}, V. and Kong, X.-H. and Yu, G.-H. and Guo, H.},
  year = {2017},
  month = sep,
  journal = {2D Materials},
  volume = {4},
  number = {4},
  pages = {045014},
  publisher = {{IOP Publishing}},
  issn = {2053-1583},
  doi = {10.1088/2053-1583/aa8763},
  abstract = {Recent experiments reported excellent transport properties of two-dimensional (2D) van der Waals (vdW) heterostructures made of atomically thin InSe layers encapsulated by two hBN capping layers (ISBN). The carrier mobility of the ISBN films exceeded at low temperature, much higher than that of pristine InSe films. It has been puzzling why the relatively inert hBN capping layer could so drastically enhance mobility of the ISBN composite. Using a state-of-the-art first principles method, we have calculated phonon limited carrier mobility of 18 different ISBN films and 6 pristine InSe films with different thicknesses, the largest system containing 2212 atoms. The hBN capping layer significantly alters the elastic stiffness coefficient as compared with pure InSe\textemdash thus the acoustic phonons in the ISBN composite\textemdash giving rise to the observed large mobility of ISBN films. Of the 18 calculated ISBN films, the ones with no strain at the hBN/InSe interface possess the highest electron mobility, reaching at room temperature, which could easily go over at low temperatures. We conclude that the mechanical properties of the composite 2D vdW ISBN material play the crucial role for inducing the large carrier mobility, a principle that could be applied to many other 2D vdW heterostructures.},
  langid = {english},
  keywords = {DFT,hBN,Heterostructure,InSe γ (3R),mobility}
}

@article{kang20202d,
  title = {{{2D}} Semiconducting Materials for Electronic and Optoelectronic Applications: Potential and Challenge},
  shorttitle = {{{2D}} Semiconducting Materials for Electronic and Optoelectronic Applications},
  author = {Kang, Sojung and Lee, Donghun and Kim, Jonghun and Capasso, Andrea and Kang, Hee Seong and Park, Jin-Woo and Lee, Chul-Ho and Lee, Gwan-Hyoung},
  year = {2020},
  month = feb,
  journal = {2D Materials},
  volume = {7},
  number = {2},
  pages = {022003},
  publisher = {{IOP Publishing}},
  issn = {2053-1583},
  doi = {10.1088/2053-1583/ab6267},
  abstract = {Two-dimensional (2D) semiconductors hold promises for electronic and optoelectronic applications due to their outstanding electrical and optical properties. Despite a short research history, a wide range of `proof-of-concept' devices based on 2D materials have been demonstrated, highlighting their impact in advanced technology. Here we review the unique properties 2D semiconducting materials and their applications in terms of electronic and optoelectronic devices. We summarize all the engineering issues in 2D devices, including material quality, dielectric, and contacts. We also discuss recent advances of 2D semiconductor devices in electronic and optoelectronic applications. This review would help to understand superior performance and multifunctions of 2D semiconductor devices and guide us toward new device applications of 2D semiconductors.},
  langid = {english}
}

@article{ke2017decompressiondriven,
  title = {Decompression-{{Driven Superconductivity Enhancement}} in {{In}}{\textsubscript{2}}{{Se}}{\textsubscript{3}}},
  author = {Ke, Feng and Dong, Haini and Chen, Yabin and Zhang, Jianbo and Liu, Cailong and Zhang, Junkai and Gan, Yuan and Han, Yonghao and Chen, Zhiqiang and Gao, Chunxiao and Wen, Jinsheng and Yang, Wenge and Chen, Xiao-Jia and Struzhkin, Viktor V. and Mao, Ho-Kwang and Chen, Bin},
  year = {2017},
  month = sep,
  journal = {Advanced Materials},
  volume = {29},
  number = {34},
  pages = {1701983},
  issn = {1521-4095},
  doi = {10.1002/adma.201701983},
  abstract = {An unexpected superconductivity enhancement is reported in decompressed In2Se3. The onset of superconductivity in In2Se3 occurs at 41.3 GPa with a critical temperature (Tc) of 3.7 K, peaking at 47.1 GPa. The striking observation shows that this layered chalcogenide remains superconducting in decompression down to 10.7 GPa. More surprisingly, the highest Tc that occurs at lower decompression pressures is 8.2 K, a twofold increase in the same crystal structure as in compression. It is found that the evolution of Tc is driven by the pressure-induced R-3m to I-43d structural transition and significant softening of phonons and gentle variation of carrier concentration combined in the pressure quench. The novel decompression-induced superconductivity enhancement implies that it is possible to maintain pressure-induced superconductivity at lower or even ambient pressures with better superconducting performance.},
  copyright = {\textcopyright{} 2017 WILEY-VCH Verlag GmbH \& Co. KGaA, Weinheim},
  langid = {english},
  keywords = {band structure,device,In2Se3 β (3R),In2Se3 β',phase transition,phase transition pressure,superconductivity,XRD},
  annotation = {ZSCC: 0000000[s0]}
}

@article{khan2020future,
  title = {The Future of Ferroelectric Field-Effect Transistor Technology},
  author = {Khan, Asif Islam and Keshavarzi, Ali and Datta, Suman},
  year = {2020},
  month = oct,
  journal = {Nature Electronics},
  volume = {3},
  number = {10},
  pages = {588--597},
  publisher = {{Nature Publishing Group}},
  issn = {2520-1131},
  doi = {10/ghxkcw},
  abstract = {The discovery of ferroelectricity in oxides that are compatible with modern semiconductor manufacturing processes, such as hafnium oxide, has led to a re-emergence of the ferroelectric field-effect transistor in advanced microelectronics. A ferroelectric field-effect transistor combines a ferroelectric material with a semiconductor in a transistor structure. In doing so, it merges logic and memory functionalities at the single-device level, delivering some of the most pressing hardware-level demands for emerging computing paradigms. Here, we examine the potential of the ferroelectric field-effect transistor technologies in current embedded non-volatile memory applications and future in-memory, biomimetic and alternative computing models. We highlight the material- and device-level challenges involved in high-volume manufacturing in advanced technology nodes ({$\leq$}10 nm), which are reminiscent of those encountered in the early days of high-K-metal-gate transistor development. We argue that the ferroelectric field-effect transistors can be a key hardware component in the future of computing, providing a new approach to electronics that we term ferroelectronics.},
  copyright = {2020 Springer Nature Limited},
  langid = {english},
  annotation = {00002  ZSCC: 0000002  2 citations (Crossref) [2021-02-05]},
  file = {C\:\\Users\\ffdra\\Zotero\\storage\\ZQKLGY6V\\s41928-020-00492-7.html}
}

@article{khranovskyy2014photoluminescence,
  title = {Photoluminescence Study of Basal Plane Stacking Faults in {{ZnO}} Nanowires},
  author = {Khranovskyy, V. and Eriksson, M. O. and Radnoczi, G. Z. and Khalid, A. and Zhang, H. and Holtz, P. O. and Hultman, L. and Yakimova, R.},
  year = {2014},
  month = apr,
  journal = {Physica B: Condensed Matter},
  series = {5th {{South African Conference}} on {{Photonic Materials}} ({{SACPM}} 2013)},
  volume = {439},
  pages = {50--53},
  issn = {0921-4526},
  doi = {10.1016/j.physb.2013.12.020},
  abstract = {We have investigated the photoluminescence (PL) of ZnO nanowires (NWs) containing a high density (\textasciitilde 1\texttimes 106cm-1) of basal plane stacking faults (BSFs). It was observed that the BSFs result in a specific PL peak at \textasciitilde 3.329eV along with a donor bound excitonic emission (DoX) peak at 5K. The observed BSF-related emission is of excitonic type and possesses longer PL lifetime than DoX (\textasciitilde 360ps vs. \textasciitilde 70ps). Via comparison of the microstructural and the PL properties of the ZnO NWs, it is shown that the observed BSF-related emission is due to the formation of crystal phase quantum wells (QWs). This is explained by the fact that BSF in wurtzite (WZ) ZnO is the thinnest segment of zinc blende (ZB) phase ZnO inserted in the WZ matrix, resulting in band alignment of type II due to the conduction and valence band offsets of ZB with respect to WZ ZnO. The mechanism of the BSF related PL is suggested to be an indirect exciton transitions due to the recombination of electrons confined in the ZB QWs to holes in the WZ barriers localized near the BSFs.},
  langid = {english},
  keywords = {Crystal phase engineering,Indirect exciton transition,Nanowires,Stacking faults,Time resolved spectroscopy,ZnO}
}

@article{khusayfan2018design,
  title = {Design and Characterization of {{Au}}/{{In}}{\textsubscript{4}}{{Se}}{\textsubscript{3}}/{{Ga}}{\textsubscript{2}}{{S}}{\textsubscript{3}}/{{C}} Field Effect Transistors},
  author = {Khusayfan, Najla M. and Qasrawi, A. F. and Khanfar, Hazem K.},
  year = {2018},
  month = mar,
  journal = {Results in Physics},
  volume = {8},
  pages = {1239--1244},
  issn = {2211-3797},
  doi = {10.1016/j.rinp.2018.02.017},
  abstract = {In the current work, the structural and electrical properties of the In4Se3/Ga2S3 interfaces are investigated. The X-ray analysis which concern the structural evolutions that is associated with the substrate type has shown that the hexagonal {$\kappa$}-In2Se3 and the selenium (rhombohedral) rich orthorhombic In4Se3 phases of InSe are grown onto glass and gold substrates, respectively, at substrate of temperature of 300 \textdegree C in a vacuum media. The coating of the {$\kappa$}-In2Se3 and of In4Se3 with amorphous layer of Ga2S3 is accompanied with uniform strain. The In4Se3/Ga2S3 interface is found to be of attractive quantum confinement features as it exhibited a conduction and valence band offsets of 0.20 and 1.86 eV, respectively. When the Au/In4Se3/Ga2S3 interface was contacted with carbon metallic point contact, it reveals a back to back Schottky hybrid device that behaves typically as metal\textendash oxidesemiconductor field effect transition (MOSFET). The depletion capacitance analysis of this device revealed built in voltage values of 1.91 and 1.64 V at the Au and C sides, respectively. The designed MOSFET which is characterized in the frequency domain of 0.01\textendash 1.80 GHz is observed to exhibit, resonance-anti-resonance phenomena associated with negative capacitance effect in a wide domain of frequency that nominate it for applications in electronic circuits as parasitic capacitance minimizer, bus switching speed enhancer and low pass/high pass filter at microwave frequencies.},
  langid = {english},
  keywords = {In2Se3 κ}
}

@article{kim2003hysteresis,
  title = {Hysteresis {{Caused}} by {{Water Molecules}} in {{Carbon Nanotube Field-Effect Transistors}}},
  author = {Kim, Woong and Javey, Ali and Vermesh, Ophir and Wang, Qian and Li, Yiming and Dai, Hongjie},
  year = {2003},
  month = feb,
  journal = {Nano Letters},
  volume = {3},
  number = {2},
  pages = {193--198},
  publisher = {{American Chemical Society}},
  issn = {1530-6984},
  doi = {10.1021/nl0259232},
  abstract = {Carbon nanotube field-effect transistors commonly comprise nanotubes lying on SiO2 surfaces exposed to the ambient environment. It is shown here that the transistors exhibit hysteresis in their electrical characteristics because of charge trapping by water molecules around the nanotubes, including SiO2 surface-bound water proximal to the nanotubes. Hysteresis persists for the transistors in vacuum since the SiO2-bound water does not completely desorb in vacuum at room temperature, a known phenomenon in SiO2 surface chemistry. Heating under dry conditions significantly removes water and reduces hysteresis in the transistors. Nearly hysteresis-free transistors are obtainable by passivating the devices with polymers that hydrogen bond with silanol groups on SiO2 (e.g., with poly(methyl methacrylate) (PMMA)). However, nanotube humidity sensors could be explored with suitable water-sensitive coatings. The results may have implications to field-effect transistors made from other chemically derived materials.}
}

@article{kim2012raman,
  title = {Raman {{Spectroscopy}} of {{Boron-Doped Single-Layer Graphene}}},
  author = {Kim, Yoong Ahm and Fujisawa, Kazunori and Muramatsu, Hiroyuki and Hayashi, Takuya and Endo, Morinobu and Fujimori, Toshihiko and Kaneko, Katsumi and Terrones, Mauricio and Behrends, Jan and Eckmann, Axel and Casiraghi, Cinzia and Novoselov, Kostya S. and Saito, Riichiro and Dresselhaus, Mildred S.},
  year = {2012},
  month = jul,
  journal = {ACS Nano},
  volume = {6},
  number = {7},
  pages = {6293--6300},
  publisher = {{American Chemical Society}},
  issn = {1936-0851},
  doi = {10.1021/nn301728j},
  abstract = {The introduction of foreign atoms, such as nitrogen, into the hexagonal network of an sp2-hybridized carbon atom monolayer has been demonstrated and constitutes an effective tool for tailoring the intrinsic properties of graphene. Here, we report that boron atoms can be efficiently substituted for carbon in graphene. Single-layer graphene substitutionally doped with boron was prepared by the mechanical exfoliation of boron-doped graphite. X-ray photoelectron spectroscopy demonstrated that the amount of substitutional boron in graphite was {$\sim$}0.22 atom \%. Raman spectroscopy demonstrated that the boron atoms were spaced 4.76 nm apart in single-layer graphene. The 7-fold higher intensity of the D-band when compared to the G-band was explained by the elastically scattered photoexcited electrons by boron atoms before emitting a phonon. The frequency of the G-band in single-layer substitutionally boron-doped graphene was unchanged, which could be explained by the p-type boron doping (stiffening) counteracting the tensile strain effect of the larger carbon\textendash boron bond length (softening). Boron-doped graphene appears to be a useful tool for engineering the physical and chemical properties of graphene.}
}

@article{kim2016polar,
  title = {Polar Metals by Geometric Design},
  author = {Kim, T. H. and Puggioni, D. and Yuan, Y. and Xie, L. and Zhou, H. and Campbell, N. and Ryan, P. J. and Choi, Y. and Kim, J.-W. and Patzner, J. R. and Ryu, S. and Podkaminer, J. P. and Irwin, J. and Ma, Y. and Fennie, C. J. and Rzchowski, M. S. and Pan, X. Q. and Gopalan, V. and Rondinelli, J. M. and Eom, C. B.},
  year = {2016},
  month = may,
  journal = {Nature},
  volume = {533},
  number = {7601},
  pages = {68--72},
  issn = {1476-4687},
  doi = {10.1038/nature17628},
  abstract = {Ab initio calculations are used to identify the structural conditions under which a polar state in metals might be stabilized; this information is used to guide the experimental realization of new room-temperature polar metals.},
  copyright = {2016 Nature Publishing Group, a division of Macmillan Publishers Limited. All Rights Reserved.},
  langid = {english},
  annotation = {00145}
}

@article{kim2018analysis,
  title = {Analysis of Asymmetrical Hysteresis Phenomena Observed in {{TMD-based}} Field Effect Transistors},
  author = {Kim, Juhyung and Jeong, Jaewon and Lee, Sanghyun and Jeong, Seokwon and Roh, Yonghan},
  year = {2018},
  month = sep,
  journal = {AIP Advances},
  volume = {8},
  number = {9},
  pages = {095114},
  publisher = {{American Institute of Physics}},
  doi = {10.1063/1.5050174},
  abstract = {To realize field effect transistors with multi-layered MoS2 and WSe2 (hereafter denoted as MoS2 FET and WSe2 FET), many device instability problems should be surmounted, such as the hysteresis generation of the devices. In order to clarify the mechanism of the asymmetrical hysteresis phenomena observed in the transfer characteristics of the MoS2 and WSe2 FET, the temperature dependencies of their characteristics are analyzed. Based on these analyses, it can be concluded that donor-like traps present in both the SiO2/MoS2 interface and the MoS2 bulk in multi-layered MoS2 FETs, and that acceptor-like traps present in both the SiO2/WSe2 interface, and the WSe2 bulk in multi-layered WSe2 FETs. Furthermore, based on the chemical analyses and the arguments presented in previous studies, we propose that the sulfur vacancy (SV) is the origin of donor-like traps present in MoS2, and the tungsten vacancy (TV) is the origin of acceptor-like traps present in WSe2. This work may provide a potential clue to overcome many practical problems for realization of the transition metal dichalcogenides (TMDs) based FETs.},
  annotation = {00000  ZSCC: 0000000}
}

@article{kim2020polarized,
  title = {Polarized {{Raman}} Spectroscopy for Studying Two-Dimensional Materials},
  author = {Kim, Jungcheol and Lee, Jae-Ung and Cheong, Hyeonsik},
  year = {2020},
  month = may,
  journal = {Journal of Physics: Condensed Matter},
  volume = {32},
  number = {34},
  pages = {343001},
  publisher = {{IOP Publishing}},
  issn = {0953-8984},
  doi = {10.1088/1361-648X/ab8848},
  abstract = {Raman spectroscopy has been established as one of the core experimental tools to study two-dimensional materials (2DMs) including graphene, black phosphorus, transitional metal chalcogenides, and other layered materials. If the polarization of the incident photons and the scattered photons are carefully controlled, the selection rules for the Raman scattering from phonon modes allow accurate mode assignments, which is not always possible in Raman scattering measurements using unpolarized light. Furthermore, polarized Raman spectroscopy can be used to determine the crystallographic orientation of isotropic 2DMs with in-plane strain or anisotropic 2DMs. This review explains the basics of polarized Raman spectroscopy, especially in the context of 2DMs research, and survey some of the most important applications of polarized Raman spectroscopy in isotropic and anisotropic 2DMs studies.},
  langid = {english},
  keywords = {review article}
}

@book{kittel2005introduction,
  title = {Introduction to {{Solid State Physics}}},
  author = {Kittel, Charles},
  year = {2005},
  edition = {Eighth},
  publisher = {{Wiley}},
  isbn = {987-81-265-3518-7},
  keywords = {Science / Physics / Atomic \& Molecular,Science / Physics / General},
  annotation = {00000}
}

@article{kohlstedt2005theoretical,
  title = {Theoretical Current-Voltage Characteristics of Ferroelectric Tunnel Junctions},
  author = {Kohlstedt, H. and Pertsev, N. A. and Rodr{\'i}guez Contreras, J. and Waser, R.},
  year = {2005},
  month = sep,
  journal = {Physical Review B},
  volume = {72},
  number = {12},
  pages = {125341},
  publisher = {{American Physical Society}},
  doi = {10/bqv6rp},
  abstract = {We present the concept of ferroelectric tunnel junctions (FTJs). These junctions consist of two metal electrodes separated by a nanometer-thick ferroelectric barrier. The current-voltage characteristics of FTJs are analyzed under the assumption that the direct electron tunneling represents the dominant conduction mechanism. First, the influence of converse piezoelectric effect inherent in ferroelectric materials on the tunnel current is described. The calculations show that the lattice strains of piezoelectric origin modify the current-voltage relationship owing to strain-induced changes of the barrier thickness, electron effective mass, and position of the conduction-band edge. Remarkably, the conductance minimum becomes shifted from zero voltage due to the piezoelectric effect, and a strain-related resistive switching takes place after the polarization reversal in a ferroelectric barrier. Second, we analyze the influence of an internal electric field arising due to imperfect screening of polarization charges by electrons in metal electrodes. It is shown that, for asymmetric FTJs, this depolarizing-field effect also leads to a considerable change of the barrier resistance after the polarization reversal. However, the symmetry of the resulting current-voltage loop is different from that characteristic of the strain-related resistive switching. The crossover from one to another type of the hysteretic curve, which accompanies the increase of FTJ asymmetry, is described taking into account both the strain and depolarizing-field effects. It is noted that asymmetric FTJs with dissimilar top and bottom electrodes are preferable for the nonvolatile memory applications because of a larger resistance on/off ratio.},
  annotation = {00000  ZSCC: 0000355}
}

@article{kokil2012techniques,
  title = {Techniques for Characterization of Charge Carrier Mobility in Organic Semiconductors},
  author = {Kokil, Akshay and Yang, Ke and Kumar, Jayant},
  year = {2012},
  month = aug,
  journal = {Journal of Polymer Science Part B: Polymer Physics},
  volume = {50},
  number = {15},
  pages = {1130--1144},
  publisher = {{John Wiley \& Sons, Ltd}},
  issn = {0887-6266},
  doi = {10.1002/polb.23103},
  abstract = {Abstract The charge transport characteristics of organic semiconductors are one of the key attributes that impacts the performance of organic electronic and optoelectronic devices in which they are utilized. For improved performance in organic photovoltaic cells, light-emitting diodes, and field-effect transistors (FETs), efficient transport of the charge carriers within the organic semiconductor is especially critical. Characterization of charge transport in these organic semiconductors is important both from scientific and technological perspectives. In this review, we shall mainly discuss the techniques for measuring the charge carrier mobility and not the theoretical underpinnings of the mechanism of charge transport. Mobility measurements in organic semiconductors and particularly in conjugated polymers, using space-charge-limited current, time of flight, carrier extraction by linearly increasing voltage, double injection, FETs, and impedance spectroscopy are discussed. The relative merits, as well as limitations for each of these techniques are reviewed. ? 2012 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys, 2012},
  keywords = {charge transport,conjugated polymers,photophysics}
}

@article{kuhn1971ionic,
  title = {Ionic {{Contamination}} and {{Transport}} of {{Mobile Ions}} in {{MOS Structures}}},
  author = {Kuhn, M. and Silversmith, D. J.},
  year = {1971},
  month = jun,
  journal = {Journal of The Electrochemical Society},
  volume = {118},
  number = {6},
  pages = {966},
  publisher = {{IOP Publishing}},
  issn = {1945-7111},
  doi = {10.1149/1.2408233},
  langid = {english}
}

@article{kumar2003hotcarrier,
  title = {Hot-Carrier Charge Trapping and Trap Generation in {{HfO}}{\textsubscript{2}} and {{Al}}{\textsubscript{2}}{{O}}{\textsubscript{3}} Field-Effect Transistors},
  author = {Kumar, Arvind and Fischetti, Massimo V. and Ning, Tak H. and Gusev, Evgeni},
  year = {2003},
  month = aug,
  journal = {Journal of Applied Physics},
  volume = {94},
  number = {3},
  pages = {1728--1737},
  publisher = {{American Institute of Physics}},
  issn = {0021-8979},
  doi = {10.1063/1.1586985}
}

@article{kupers2018controlled,
  title = {Controlled {{Crystal Growth}} of {{Indium Selenide}}, {{In}}{\textsubscript{2}}{{Se}}{\textsubscript{3}}, and the {{Crystal Structures}} of {$\alpha$}-{{In}}{\textsubscript{2}}{{Se}}{\textsubscript{3}}},
  author = {K{\"u}pers, Michael and Konze, Philipp M. and Meledin, Alexander and Mayer, Joachim and Englert, Ulli and Wuttig, Matthias and Dronskowski, Richard},
  year = {2018},
  month = sep,
  journal = {Inorganic Chemistry},
  volume = {57},
  number = {18},
  pages = {11775--11781},
  publisher = {{American Chemical Society}},
  issn = {0020-1669},
  doi = {10.1021/acs.inorgchem.8b01950},
  abstract = {In2Se3 has been known for over 100 years and recently attracted interest as a promising candidate for a variety of applications, such as solar cells, photodiodes, and phase-change memories. Despite the broad concern for possible uses, its polymorphism and structure are poorly characterized. By combining X-ray diffraction, transmission electron microscopy, and quantum-chemical calculations, we present here the crystal structures of two layered room-temperature polytypes: 3R and 2H In2Se3. Both polymorphs are stacking variants of the same Se\textendash In\textendash Se\textendash In\textendash Se layers comprising two coordination environments for the In atoms, one tetrahedral and one octahedral. By using chemical-bonding analysis, we look at the different In positions in {$\alpha$}-In2Se3 and compare them to those in the metastable {$\beta$}-phase.},
  keywords = {DFT,DOS,HAADF STEM,In2Se3 α,In2Se3 α (2H),In2Se3 α (3R),In2Se3 β,In2Se3 γ,InSe β (2H),InSe γ (3R),TEM,XRD},
  annotation = {ZSCC: 0000012}
}

@article{kwon2018highperformance,
  title = {High-Performance and Scalable Metal-Chalcogenide Semiconductors and Devices via Chalco-Gel Routes},
  author = {Kwon, Sung Min and Won, Jong Kook and Jo, Jeong-Wan and Kim, Jaehyun and Kim, Hee-Joong and Kwon, Hyuck-In and Kim, Jaekyun and Ahn, Sangdoo and Kim, Yong-Hoon and Lee, Myoung-Jae and Lee, Hyung-ik and Marks, Tobin J. and Kim, Myung-Gil and Park, Sung Kyu},
  year = {2018},
  month = apr,
  journal = {Science Advances},
  volume = {4},
  number = {4},
  pages = {eaap9104},
  issn = {2375-2548},
  doi = {10.1126/sciadv.aap9104},
  langid = {english},
  keywords = {charge trapping,device,In2Se3 β,Raman,TEM},
  annotation = {00008}
}

@article{kwon2018relationship,
  title = {Relationship between Effective Mobility and Border Traps Associated with Charge Trapping in {{In}}{\textsubscript{0.7}}{{Ga}}{\textsubscript{0.3}}{{As MOSFETs}} with Various High-{$\kappa$} Stacks},
  author = {Kwon, Hyuk-Min and Kim, Dae-Hyun and Kim, Tae-Woo},
  year = {2018},
  month = jan,
  journal = {Applied Physics Express},
  volume = {11},
  number = {3},
  pages = {034101},
  publisher = {{IOP Publishing}},
  issn = {1882-0786},
  doi = {10.7567/APEX.11.034101},
  langid = {english}
}

@article{kwon2020inplane,
  title = {In-{{Plane Ferroelectric Tin Monosulfide}} and {{Its Application}} in a {{Ferroelectric Analog Synaptic Device}}},
  author = {Kwon, Ki Chang and Zhang, Yishu and Wang, Lin and Yu, Wei and Wang, Xiaojie and Park, In-Hyeok and Choi, Hwa Seob and Ma, Teng and Zhu, Ziyu and Tian, Bingbing and Su, Chenliang and Loh, Kian Ping},
  year = {2020},
  month = jun,
  journal = {ACS Nano},
  volume = {14},
  number = {6},
  pages = {7628--7638},
  publisher = {{American Chemical Society}},
  issn = {1936-0851},
  doi = {10.1021/acsnano.0c03869},
  abstract = {Two-dimensional ferroelectrics is attractive for synaptic device applications because of its low power consumption and amenability to high-density device integration. Here, we demonstrate that tin monosulfide (SnS) films less than 6 nm thick show optimum performance as a semiconductor channel in an in-plane ferroelectric analogue synaptic device, whereas thicker films have a much poorer ferroelectric response due to screening effects by a higher concentration of charge carriers. The SnS ferroelectric device exhibits synaptic behaviors with highly stable room-temperature operation, high linearity in potentiation/depression, long retention, and low cycle-to-cycle/device-to-device variations. The simulated device based on ferroelectric SnS achieves {$\sim$}92.1\% pattern recognition accuracy in an artificial neural network simulation. By switching the ferroelectric domains partially, multilevel conductance states and the conductance ratio can be obtained, achieving high pattern recognition accuracy.},
  annotation = {00008  ZSCC: 0000007  6 citations (Crossref) [2021-02-02]}
}

@article{lahnemann2014luminescence,
  title = {Luminescence Associated with Stacking Faults in {{GaN}}},
  author = {L{\"a}hnemann, Jonas and Jahn, Uwe and Brandt, Oliver and Flissikowski, Timur and Dogan, Pinar and Grahn, Holger T.},
  year = {2014},
  month = oct,
  journal = {Journal of Physics D: Applied Physics},
  volume = {47},
  number = {42},
  pages = {423001},
  publisher = {{IOP Publishing}},
  issn = {0022-3727},
  doi = {10.1088/0022-3727/47/42/423001},
  abstract = {Basal-plane stacking faults are an important class of optically active structural defects in wurtzite semiconductors. The local deviation from the 2H stacking of the wurtzite matrix to a 3C zinc-blende stacking induces a bound state in the gap of the host crystal, resulting in the localization of excitons. Due to the two-dimensional nature of these planar defects, stacking faults act as quantum wells, giving rise to radiative transitions of excitons with characteristic energies. Luminescence spectroscopy is thus capable of detecting even a single stacking fault in an otherwise perfect wurtzite crystal. This review draws a comprehensive picture of the luminescence properties related to stacking faults in GaN. The emission energies associated with different types of stacking faults as well as factors that can shift these energies are discussed. In this context, the importance of the quantum-confined Stark effect in these zinc-blende/wurtzite heterostructures, which results from the spontaneous polarization of wurtzite GaN, is underlined. This discussion is extended to zinc-blende segments in a wurtzite matrix. Furthermore, other factors affecting the emission energy and linewidth of stacking fault-related peaks as well as results obtained at room temperature are addressed. The considerations presented in this article should also be transferable to other wurtzite semiconductors.},
  langid = {english}
}

@article{lan2020gate,
  title = {Gate {{Bias Stress Instability}} and {{Hysteresis Characteristics}} of {{InAs Nanowire Field-Effect Transistors}}},
  author = {Lan, Changyong and Yip, SenPo and Kang, Xiaolin and Meng, You and Bu, Xiuming and Ho, Johnny C.},
  year = {2020},
  month = dec,
  journal = {ACS Applied Materials \& Interfaces},
  volume = {12},
  number = {50},
  pages = {56330--56337},
  publisher = {{American Chemical Society}},
  issn = {1944-8244},
  doi = {10.1021/acsami.0c17317},
  abstract = {Because of the excellent electrical properties, III\textendash V semiconductor nanowires are promising building blocks for next-generation electronics; however, their rich surface states inevitably contribute large amounts of charge traps, leading to gate bias stress instability and hysteresis characteristics in nanowire field-effect transistors (FETs). Here, we investigated thoroughly the gate bias stress and hysteresis effects in InAs nanowire FETs. It is observed that the output current decreases together with the threshold voltage shifting to the positive direction when a positive gate bias stress is applied, and vice versa for the negative gate bias stress. For double-sweep transfer characteristics, the significant hysteresis behavior is observed, depending heavily on the sweeping rate and range. On the basis of complementary investigations of these devices, charge traps are confirmed to be the dominant factor for these instability effects. Importantly, the hysteresis can be simulated well by utilizing a combination of the rate equation for electron density and the empirical model for electron mobility. This provides an accurate evaluation of carrier mobility, which is in distinct contrast to the overestimation of mobility when using the transconductance for calculation. All these findings are important for understanding the charge trap dynamics to further enhance the device performance of nanowire FETs.}
}

@article{lau2012extended,
  title = {An {{Extended Unified Schottky-Poole-Frenkel Theory}} to {{Explain}} the {{Current-Voltage Characteristics}} of {{Thin Film Metal-Insulator-Metal Capacitors}} with {{Examples}} for {{Various High-k Dielectric Materials}}},
  author = {Lau, W. S.},
  year = {2012},
  month = oct,
  journal = {ECS Journal of Solid State Science and Technology},
  volume = {1},
  number = {6},
  pages = {N139},
  publisher = {{IOP Publishing}},
  issn = {2162-8777},
  doi = {10.1149/2.006301jss},
  langid = {english}
}

@article{laurita2019evidence,
  title = {Evidence for the Weakly Coupled Electron Mechanism in an {{Anderson-Blount}} Polar Metal},
  author = {Laurita, N. J. and Ron, A. and Shan, Jun-Yi and Puggioni, D. and Koocher, N. Z. and Yamaura, K. and Shi, Y. and Rondinelli, J. M. and Hsieh, D.},
  year = {2019},
  month = jul,
  journal = {Nature Communications},
  volume = {10},
  number = {1},
  pages = {1--7},
  publisher = {{Nature Publishing Group}},
  issn = {2041-1723},
  doi = {10/gg3f5c},
  abstract = {A ferroelectric metal is a peculiar state proposed by Anderson and Blunt half a century ago, but is not fully understood. Here, the authors present a time-resolved reflectivity study of LiOsO3 demonstrating evidence for decoupling of itinerant electrons and phonons in the polar transition of the material.},
  copyright = {2019 The Author(s)},
  langid = {english},
  annotation = {00000  ZSCC: 0000005}
}

@article{lee1985disordered,
  title = {Disordered Electronic Systems},
  author = {Lee, Patrick A.},
  year = {1985},
  journal = {Reviews of Modern Physics},
  volume = {57},
  number = {2},
  pages = {287--337},
  doi = {10.1103/revmodphys.57.287},
  annotation = {06459  ZSCC: 0006454},
  file = {C\:\\Users\\ffdra\\Zotero\\storage\\Z4IP4I4X\\RevModPhys.57.html}
}

@article{lee2010band,
  title = {Band Transport and Mobility Edge in Amorphous Solution-Processed Zinc Tin Oxide Thin-Film Transistors},
  author = {Lee, Chen-Guan and Cobb, Brian and Dodabalapur, Ananth},
  year = {2010},
  month = nov,
  journal = {Applied Physics Letters},
  volume = {97},
  number = {20},
  pages = {203505},
  publisher = {{American Institute of Physics}},
  issn = {0003-6951},
  doi = {10.1063/1.3517502},
  abstract = {We report on charge transport phenomena in high-mobility solution-deposited amorphous zinc-tin oxide based thin-film transistors. At low carrier concentrations, the dominant transport mechanism is multiple trap and release, with the activation energy steadily decreasing with increasing carrier density. The activation energy decreases to zero and beyond a threshold carrier density, the mobility decreases with increasing temperature. This temperature dependence as well as the value of the mobility clearly indicates that transport is bandlike. Also observed is a clear mobility edge in accordance with the prediction of Mott's model, which are normally observed in crystalline semiconductors.}
}

@article{lee2011polarity,
  title = {Polarity Control of Carrier Injection at Ferroelectric/Metal Interfaces for Electrically Switchable Diode and Photovoltaic Effects},
  author = {Lee, D. and Baek, S. H. and Kim, T. H. and Yoon, J.-G. and Folkman, C. M. and Eom, C. B. and Noh, T. W.},
  year = {2011},
  month = sep,
  journal = {Physical Review B},
  volume = {84},
  number = {12},
  pages = {125305},
  publisher = {{American Physical Society}},
  doi = {10.1103/PhysRevB.84.125305},
  abstract = {We investigated a switchable ferroelectric diode effect and its physical mechanism in Pt/BiFeO3/SrRuO3 thin-film capacitors. Our results of electrical measurements support that, near the Pt/BiFeO3 interface of as-grown samples, a defective layer (possibly an oxygen-vacancy-rich layer) becomes formed and disturbs carrier injection. We therefore used an electrical training process to obtain ferroelectric control of the diode polarity where, by changing the polarization direction using an external bias, we could switch the transport characteristics between forward and reverse diodes. Our system is characterized with a rectangular polarization-hysteresis loop with which we confirmed that the diode-polarity switching occurred at the ferroelectric coercive voltage. Moreover, we observed a simultaneous switching of the diode polarity and the associated photovoltaic response dependent on the ferroelectric domain configurations. Our detailed study suggests that the polarization charge can affect the Schottky barrier at the ferroelectric/metal interfaces, resulting in a modulation of the interfacial carrier injection. The amount of polarization-modulated carrier injection can affect the transition voltage value at which a space-charge-limited bulk current\textendash voltage (J\textendash V) behavior is changed from Ohmic (i.e., J {$\propto$} V) to nonlinear (i.e., J {$\propto$} Vn with n {$\geq$} 2). This combination of bulk conduction and polarization-modulated carrier injection explains the detailed physical mechanism underlying the switchable diode effect in ferroelectric capacitors.},
  keywords = {BiFeO3}
}

@article{lee2011traplimited,
  title = {Trap-Limited and Percolation Conduction Mechanisms in Amorphous Oxide Semiconductor Thin Film Transistors},
  author = {Lee, Sungsik and Ghaffarzadeh, Khashayar and Nathan, Arokia and Robertson, John and Jeon, Sanghun and Kim, Changjung and Song, I-Hun and Chung, U-In},
  year = {2011},
  month = may,
  journal = {Applied Physics Letters},
  volume = {98},
  number = {20},
  pages = {203508},
  publisher = {{American Institute of Physics}},
  issn = {0003-6951},
  doi = {10.1063/1.3589371},
  abstract = {The electron conduction mechanism in the above-threshold regime in amorphous oxide semiconductor thin film transistors is shown to be controlled by percolation and trap-limited conduction. The band tail state slope controls the field effect mobility, while the average spatial coherence length and potential fluctuation control percolation conduction. In these limits, the field effect mobility is found to follow a power law, from which a universal mobility versus carrier concentration dependence is extracted.}
}

@article{lei2014evolution,
  title = {Evolution of the {{Electronic Band Structure}} and {{Efficient Photo-Detection}} in {{Atomic Layers}} of {{InSe}}},
  author = {Lei, Sidong and Ge, Liehui and Najmaei, Sina and George, Antony and Kappera, Rajesh and Lou, Jun and Chhowalla, Manish and Yamaguchi, Hisato and Gupta, Gautam and Vajtai, Robert and Mohite, Aditya D. and Ajayan, Pulickel M.},
  year = {2014},
  month = feb,
  journal = {ACS Nano},
  volume = {8},
  number = {2},
  pages = {1263--1272},
  publisher = {{American Chemical Society}},
  issn = {1936-0851},
  doi = {10.1021/nn405036u},
  abstract = {Atomic layers of two-dimensional (2D) materials have recently been the focus of extensive research. This follows from the footsteps of graphene, which has shown great potential for ultrathin optoelectronic devices. In this paper, we present a comprehensive study on the synthesis, characterization, and thin film photodetector application of atomic layers of InSe. Correlation between resonance Raman spectroscopy and photoconductivity measurements allows us to systematically track the evolution of the electronic band structure of 2D InSe as its thickness approaches few atomic layers. Analysis of photoconductivity spectra suggests that few-layered InSe has an indirect band gap of 1.4 eV, which is 200 meV higher than bulk InSe due to the suppressed interlayer electron orbital coupling. Temperature-dependent photocurrent measurements reveal that the suppressed interlayer interaction also results in more localized pz-like orbitals, and these orbitals couple strongly with the in-plane E{${'}$} and E{${''}$} phonons. Finally, we measured a strong photoresponse of 34.7 mA/W and fast response time of 488 {$\mu$}s for a few layered InSe, suggesting that it is a good material for thin film optoelectronic applications.},
  keywords = {Band gap,device,EDX,flake,HRTEM,InSe,photo-transport,Raman,Raman peaks,TEM}
}

@article{lei2018observation,
  title = {Observation of {{Quasi-Two-Dimensional Polar Domains}} and {{Ferroelastic Switching}} in a {{Metal}}, {{Ca}}{\textsubscript{3}}{{Ru}}{\textsubscript{2}}{{O}}{\textsubscript{7}}},
  author = {Lei, Shiming and Gu, Mingqiang and Puggioni, Danilo and Stone, Greg and Peng, Jin and Ge, Jianjian and Wang, Yu and Wang, Baoming and Yuan, Yakun and Wang, Ke and Mao, Zhiqiang and Rondinelli, James M. and Gopalan, Venkatraman},
  year = {2018},
  month = may,
  journal = {Nano Letters},
  volume = {18},
  number = {5},
  pages = {3088--3095},
  issn = {1530-6984},
  doi = {10.1021/acs.nanolett.8b00633},
  abstract = {Polar domains arise in insulating ferroelectrics when free carriers are unable to fully screen surface-bound charges. Recently discovered binary and ternary polar metals exhibit broken inversion symmetry coexisting with free electrons that might be expected to suppress the electrostatic driving force for domain formation. Contrary to this expectation, we report the first direct observation of polar domains in single crystals of the polar metal Ca3Ru2O7. By a combination of mesoscale optical second-harmonic imaging and atomic-resolution scanning transmission electron microscopy, the polar domains are found to possess a quasi-two-dimensional slab geometry with a lateral size of {$\sim$}100 {$\mu$}m and thickness of {$\sim$}10 nm. Electronic structure calculations show that the coexistence of electronic and parity-lifting orders arise from anharmonic lattice interactions, which support 90\textdegree{} and 180\textdegree{} polar domains in a metal. Using in situ transmission electron microscopy, we also demonstrate a strain-tuning route to achieve ferroelastic switching of polar metal domains.},
  annotation = {00017}
}

@article{leisgang2018optical,
  title = {Optical Second Harmonic Generation in Encapsulated Single-Layer {{InSe}}},
  author = {Leisgang, Nadine and Roch, Jonas G. and Froehlicher, Guillaume and Hamer, Matthew and Terry, Daniel and Gorbachev, Roman and Warburton, Richard J.},
  year = {2018},
  month = oct,
  journal = {AIP Advances},
  volume = {8},
  number = {10},
  pages = {105120},
  publisher = {{American Institute of Physics}},
  doi = {10.1063/1.5052417},
  abstract = {We report the observation of optical second harmonic generation (SHG) in single-layer indium selenide (InSe). We measure a second harmonic signal of {$>$} 103 cts/s under nonresonant excitation using a home-built confocal microscope and a standard pulsed pico-second laser. We demonstrate that polarization-resolved SHG serves as a fast, non-invasive tool to determine the crystal axes in single-layer InSe and to relate the sharp edges of the flake to the armchair and zigzag edges of the crystal structure. Our experiment determines these angles to an accuracy better than {$\pm$} 0.2\textdegree. Treating the two-dimensional material as a nonlinear polarizable sheet, we determine a second-order sheet polarizability {$\mid\mid\chi$}(2)sheet{$\mid\mid$}=(17.9\,{$\pm$}\,11.0)\texttimes 10-20\,m2\,V-1|{$\chi$}sheet(2)|=(17.9\,{$\pm$}\,11.0)\texttimes 10-20\,m2\,V-1{$<$}math display="inline" overflow="scroll" altimg="eq-00001.gif"{$><$}mo{$>$}|{$<$}/mo{$><$}msubsup{$><$}mrow{$><$}mi{$>\chi<$}/mi{$><$}/mrow{$><$}mrow{$><$}mi mathvariant="normal"{$>$}s{$<$}/mi{$><$}mi mathvariant="normal"{$>$}h{$<$}/mi{$><$}mi mathvariant="normal"{$>$}e{$<$}/mi{$><$}mi mathvariant="normal"{$>$}e{$<$}/mi{$><$}mi mathvariant="normal"{$>$}t{$<$}/mi{$><$}/mrow{$><$}mrow{$><$}mrow{$><$}mo{$>$}({$<$}/mo{$><$}mrow{$><$}mn{$>$}2{$<$}/mn{$><$}/mrow{$><$}mo{$>$}){$<$}/mo{$><$}/mrow{$><$}/mrow{$><$}/msubsup{$><$}mo{$>$}|{$<$}/mo{$><$}mo{$>$}={$<$}/mo{$><$}mrow{$><$}mo{$>$}({$<$}/mo{$><$}mrow{$><$}mn{$>$}17.9{$<$}/mn{$><$}mtext{$>$}\,{$<$}/mtext{$><$}mo{$>\pm<$}/mo{$><$}mtext{$>$}\,{$<$}/mtext{$><$}mn{$>$}11.0{$<$}/mn{$><$}/mrow{$><$}mo{$>$}){$<$}/mo{$><$}/mrow{$><$}mo{$>\times <$}/mo{$><$}mn{$>$}1{$<$}/mn{$><$}msup{$><$}mrow{$><$}mn{$>$}0{$<$}/mn{$><$}/mrow{$><$}mrow{$><$}mo{$>-<$}/mo{$><$}mn{$>$}20{$<$}/mn{$><$}/mrow{$><$}/msup{$><$}mtext{$>$}\,{$<$}/mtext{$><$}msup{$><$}mrow{$><$}mi mathvariant="normal"{$>$}m{$<$}/mi{$><$}/mrow{$><$}mrow{$><$}mn{$>$}2{$<$}/mn{$><$}/mrow{$><$}/msup{$><$}mtext{$>$}\,{$<$}/mtext{$><$}msup{$><$}mrow{$><$}mi mathvariant="normal"{$>$}V{$<$}/mi{$><$}/mrow{$><$}mrow{$><$}mo{$>-<$}/mo{$><$}mn{$>$}1{$<$}/mn{$><$}/mrow{$><$}/msup{$><$}/math{$>$} for single-layer InSe, corresponding to an effective nonlinear susceptibility value of {$\mid\mid\chi$}(2)eff{$\mid\mid\approx$}(223\,{$\pm$}\,138)\texttimes 10-12\,m\,V-1|{$\chi$}eff(2)|{$\approx$}(223\,{$\pm$}\,138)\texttimes 10-12\,m\,V-1{$<$}math display="inline" overflow="scroll" altimg="eq-00002.gif"{$><$}mo{$>$}|{$<$}/mo{$><$}msubsup{$><$}mrow{$><$}mi{$>\chi<$}/mi{$><$}/mrow{$><$}mrow{$><$}mi mathvariant="normal"{$>$}e{$<$}/mi{$><$}mi mathvariant="normal"{$>$}ff{$<$}/mi{$><$}/mrow{$><$}mrow{$><$}mrow{$><$}mo{$>$}({$<$}/mo{$><$}mrow{$><$}mn{$>$}2{$<$}/mn{$><$}/mrow{$><$}mo{$>$}){$<$}/mo{$><$}/mrow{$><$}/mrow{$><$}/msubsup{$><$}mo{$>$}|{$<$}/mo{$><$}mo{$>\approx<$}/mo{$><$}mrow{$><$}mo{$>$}({$<$}/mo{$><$}mrow{$><$}mn{$>$}223{$<$}/mn{$><$}mtext{$>$}\,{$<$}/mtext{$><$}mo{$>\pm<$}/mo{$><$}mtext{$>$}\,{$<$}/mtext{$><$}mn{$>$}138{$<$}/mn{$><$}/mrow{$><$}mo{$>$}){$<$}/mo{$><$}/mrow{$><$}mo{$>\times <$}/mo{$><$}mn{$>$}1{$<$}/mn{$><$}msup{$><$}mrow{$><$}mn{$>$}0{$<$}/mn{$><$}/mrow{$><$}mrow{$><$}mo{$>-<$}/mo{$><$}mn{$>$}12{$<$}/mn{$><$}/mrow{$><$}/msup{$><$}mtext{$>$}\,{$<$}/mtext{$><$}mi mathvariant="normal"{$>$}m{$<$}/mi{$><$}mtext{$>$}\,{$<$}/mtext{$><$}msup{$><$}mrow{$><$}mi mathvariant="normal"{$>$}V{$<$}/mi{$><$}/mrow{$><$}mrow{$><$}mo{$>-<$}/mo{$><$}mn{$>$}1{$<$}/mn{$><$}/mrow{$><$}/msup{$><$}/math{$>$} accounting for the sheet thickness (d {$\approx$} 0.8 nm). We demonstrate that the SHG technique can also be applied to encapsulated samples to probe their crystal orientations. The method is therefore suitable for creating high quality van der Waals heterostructures with control over the crystal directions.},
  keywords = {flake,hBN,InSe γ (3R),second harmonic generation},
  annotation = {00006}
}

@article{lewandowska2001raman,
  title = {Raman Scattering in {$\alpha$}-{{In}}{\textsubscript{2}}{{Se}}{\textsubscript{3}} Crystals},
  author = {Lewandowska, R. and Bacewicz, R. and Filipowicz, J. and Paszkowicz, W.},
  year = {2001},
  month = dec,
  journal = {Materials Research Bulletin},
  volume = {36},
  number = {15},
  pages = {2577--2583},
  issn = {0025-5408},
  doi = {10.1016/S0025-5408(01)00746-2},
  abstract = {A directional freezing method was used to obtain In2Se3 crystals. Rietveld refinement of the diffraction data was performed. The Raman spectra of the {$\alpha$}-phase of In2Se3 were measured with polarized light in different configurations of the crystals. Phonon modes were assigned to the Raman tensors of the R3m space group. LO-TO splitting of the A modes were determined.},
  langid = {english},
  keywords = {Raman,Raman peaks}
}

@article{li1997dimension,
  title = {Dimension and {{Size Effects}} in {{Ferroelectrics}}},
  author = {Li, Shaoping and Eastman, Jeffery A. and Vetrone, James M. and Foster, Christopher M. and Newnham, Robert E. and Cross, L. Eric},
  year = {1997},
  month = aug,
  journal = {Japanese Journal of Applied Physics},
  volume = {36},
  number = {8R},
  pages = {5169},
  publisher = {{IOP Publishing}},
  issn = {1347-4065},
  doi = {10.1143/jjap.36.5169},
  langid = {english},
  annotation = {ZSCC: 0000118}
}

@article{li2003thermodynamic,
  title = {A {{Thermodynamic Assessment}} of the {{In}}\textendash{{Se System}}},
  author = {Li, J.-B. and Record, M.-C. and Tedenac, J.-C.},
  year = {2003},
  month = apr,
  journal = {Zeitschrift f\"ur Metallkunde},
  volume = {94},
  number = {4},
  pages = {381--389},
  issn = {0044-3093},
  doi = {10.3139/146.030381},
  abstract = {Available experimental thermodynamic and phase diagram data were critically reviewed. A thermodynamic assessment of the binary In-Se system was performed based on the evaluation of literature. The intermediate compounds taken into account are In4Se3, InSe, In6Se7, In9Se11, In5Se7, and polymorphic In2Se3 ({$\alpha$}, {$\beta$}, {$\gamma$} and {$\delta$}). All these compounds were treated as stoichiometric phases. The liquid phase was described using the association model with the associate species of `In2Se3'. A set of thermodynamic parameters was obtained, and the calculated phase diagram is presented.},
  keywords = {In2Se3 α,In2Se3 β,In2Se3 γ,In2Se3 δ,InSe β (2H),InSe γ (3R),phase diagram},
  annotation = {00000}
}

@article{li2011thermal,
  title = {Thermal Phase Transformation of {{In}}{\textsubscript{2}}{{Se}}{\textsubscript{3}} Nanowires Studied by in Situsynchrotron Radiation {{X-ray}} Diffraction},
  author = {Li, Yang and Gao, Jing and Li, Qinliang and Peng, Mingfa and Sun, Xuhui and Li, Youyong and Yuan, Gang and Wen, Wen and Meyyappan, M.},
  year = {2011},
  month = apr,
  journal = {Journal of Materials Chemistry},
  volume = {21},
  number = {19},
  pages = {6944--6947},
  publisher = {{The Royal Society of Chemistry}},
  issn = {1364-5501},
  doi = {10.1039/C1JM10419E},
  abstract = {We report the preparation of {$\alpha$}- and {$\kappa$}-phase In2Se3 nanowires by thermal evaporation and investigation of their phase transformations in situ by synchrotron radiation X-ray diffraction (XRD) during a thermal annealing process. The {$\kappa$}-phase transformed into the {$\alpha$}-phase at 500 \textdegree C and eventually transformed to high temperature {$\alpha$}-phase with a layered structure of 5 atoms-5 atoms at 700 \textdegree C irreversibly. Different atomistic structures of In2Se3 were modeled and optimized by DFT, which correlate well with the XRD results. The In2Se3 nanowires also exhibit a large difference in resistivity before and after annealing.},
  langid = {english},
  keywords = {In2Se3 κ,phase transition},
  annotation = {00000  ZSCC: NoCitationData[s0]}
}

@article{li2013probing,
  title = {Probing {{Symmetry Properties}} of {{Few-Layer MoS}}{\textsubscript{2}} and h-{{BN}} by {{Optical Second-Harmonic Generation}}},
  author = {Li, Yilei and Rao, Yi and Mak, Kin Fai and You, Yumeng and Wang, Shuyuan and Dean, Cory R. and Heinz, Tony F.},
  year = {2013},
  month = jul,
  journal = {Nano Letters},
  volume = {13},
  number = {7},
  pages = {3329--3333},
  publisher = {{American Chemical Society}},
  issn = {1530-6984},
  doi = {10.1021/nl401561r},
  abstract = {We have measured optical second-harmonic generation (SHG) from atomically thin samples of MoS2 and h-BN with one to five layers. We observe strong SHG from materials with odd layer thickness, for which a noncentrosymmetric structure is expected, while the centrosymmetric materials with even layer thickness do not yield appreciable SHG. SHG for materials with odd layer thickness was measured as a function of crystal orientation. This dependence reveals the rotational symmetry of the lattice and is shown to provide a purely optical method of determining the orientation of crystallographic axes. We report values for the nonlinearity of monolayers and odd-layers of MoS2 and h-BN and compare the variation as a function of layer thickness with a model that accounts for wave propagation effects.}
}

@article{li2014black,
  title = {Black Phosphorus Field-Effect Transistors},
  author = {Li, Likai and Yu, Yijun and Ye, Guo Jun and Ge, Qingqin and Ou, Xuedong and Wu, Hua and Feng, Donglai and Chen, Xian Hui and Zhang, Yuanbo},
  year = {2014},
  month = may,
  journal = {Nature Nanotechnology},
  volume = {9},
  number = {5},
  pages = {372--377},
  publisher = {{Nature Publishing Group}},
  issn = {1748-3395},
  doi = {10.1038/nnano.2014.35},
  abstract = {Two-dimensional crystals have emerged as a class of materials that may impact future electronic technologies. Experimentally identifying and characterizing new functional two-dimensional materials is challenging, but also potentially rewarding. Here, we fabricate field-effect transistors based on few-layer black phosphorus crystals with thickness down to a few nanometres. Reliable transistor performance is achieved at room temperature in samples thinner than 7.5~nm, with drain current modulation on the order of 105 and well-developed current saturation in the I\textendash V characteristics. The charge-carrier mobility is found to be thickness-dependent, with the highest values up to {$\sim$}1,000~cm2~V-1~s-1 obtained for a thickness of {$\sim$}10~nm. Our results demonstrate the potential of black phosphorus thin crystals as a new two-dimensional material for applications in nanoelectronic devices.},
  langid = {english},
  annotation = {Bandiera\_abtest: a Cg\_type: Nature Research Journals Primary\_atype: Research Subject\_term: Electronic devices;Electronic properties and materials Subject\_term\_id: electronic-devices;electronic-properties-and-materials}
}

@article{li2014metalsemiconductor,
  title = {Metal-{{Semiconductor Barrier Modulation}} for {{High Photoresponse}} in {{Transition Metal Dichalcogenide Field Effect Transistors}}},
  author = {Li, Hua-Min and Lee, Dae-Yeong and Choi, Min Sup and Qu, Deshun and Liu, Xiaochi and Ra, Chang-Ho and Yoo, Won Jong},
  year = {2014},
  month = feb,
  journal = {Scientific Reports},
  volume = {4},
  pages = {4041},
  issn = {2045-2322},
  doi = {10.1038/srep04041},
  abstract = {A gate-controlled metal-semiconductor barrier modulation and its effect on carrier transport were investigated in two-dimensional (2D) transition metal dichalcogenide (TMDC) field effect transistors (FETs). A strong photoresponse was observed in both unipolar MoS2 and ambipolar WSe2 FETs (i) at the high drain voltage due to a high electric field along the channel for separating photo-excited charge carriers and (ii) at the certain gate voltage due to the optimized barriers for the collection of photo-excited charge carriers at metal contacts. The effective barrier height between Ti/Au and TMDCs was estimated by a low temperature measurement. An ohmic contact behavior and drain-induced barrier lowering (DIBL) were clearly observed in MoS2 FET. In contrast, a Schottky-to-ohmic contact transition was observed in WSe2 FET as the gate voltage increases, due to the change of majority carrier transport from holes to electrons. The gate-dependent barrier modulation effectively controls the carrier transport, demonstrating its great potential in 2D TMDCs for electronic and optoelectronic applications.},
  copyright = {2014 Nature Publishing Group},
  langid = {english},
  annotation = {00083}
}

@article{li2014switchable,
  title = {Switchable Diode Effect in Ferroelectric Thin Film: {{High}} Dependence on Poling Process and Temperature},
  shorttitle = {Switchable Diode Effect in Ferroelectric Thin Film},
  author = {Li, Z. X. and Liu, X. L. and Chen, W. J. and Zhang, X. Y. and Wang, Ying and Xiong, W. M. and Zheng, Yue},
  year = {2014},
  month = dec,
  journal = {AIP Advances},
  volume = {4},
  number = {12},
  pages = {127111},
  issn = {2158-3226},
  doi = {10.1063/1.4903772},
  langid = {english},
  keywords = {PZT,Schottky}
}

@article{li2017binary,
  title = {Binary {{Compound Bilayer}} and {{Multilayer}} with {{Vertical Polarizations}}: {{Two-Dimensional Ferroelectrics}}, {{Multiferroics}}, and {{Nanogenerators}}},
  shorttitle = {Binary {{Compound Bilayer}} and {{Multilayer}} with {{Vertical Polarizations}}},
  author = {Li, Lei and Wu, Menghao},
  year = {2017},
  month = jun,
  journal = {ACS Nano},
  volume = {11},
  number = {6},
  pages = {6382--6388},
  publisher = {{American Chemical Society}},
  issn = {1936-0851},
  doi = {10.1021/acsnano.7b02756},
  abstract = {Vertical ferroelectricity in two-dimensional (2D) materials is desirable for high-density data storage without quantum tunneling or high power consumption/dissipation, which still remains elusive due to the surface-depolarizing field. Herein, we report the first-principles evidence of 2D vertical ferroelectricity induced by interlayer translation, which exists extensively in the graphitic bilayer of BN, AlN, ZnO, MoS2, GaSe, etc.; the bilayer of some 2D ferromagnets like MXene, VS2, and MoN2 can be even multiferroics with switchable magnetizations upon ferroelectric switching, rendering efficient reading and writing for high-density data storage. In particular, the electromechanical coupling between interlayer translation and potential can be used to drive the flow of electrons as nanogenerators for harvesting energy from human activities, ocean waves, mechanical vibration, etc. A ferroelectric superlattice with spatial varying potential can be formed in a bilayer Moire pattern upon a small twist or strain, making it possible to generate periodic n/p doped-domains and shape the periodicity of the potential energy landscape. Finally, some of their multilayer counterparts with wurtzite structures like a ZnO multilayer are revealed to exhibit another type of vertical ferroelectricity with greatly enhanced polarizations.},
  keywords = {DFT,ferroelectric,InSe γ (3R)}
}

@article{li2017transition,
  title = {Transition between {{Efros}}\textendash{{Shklovskii}} and {{Mott}} Variable-Range Hopping Conduction in Polycrystalline Germanium Thin Films},
  author = {Li, Zhaoguo and Peng, Liping and Zhang, Jicheng and Li, Jia and Zeng, Yong and Luo, Yuechuan and Zhan, Zhiqiang and Meng, Lingbiao and Zhou, Minjie and Wu, Weidong},
  year = {2017},
  month = feb,
  journal = {Semiconductor Science and Technology},
  volume = {32},
  number = {3},
  pages = {035010},
  publisher = {{IOP Publishing}},
  issn = {0268-1242},
  doi = {10.1088/1361-6641/aa5390},
  abstract = {We report on the electrical transport properties of polycrystalline germanium thin films which are grown by the DC magnetron sputtering method. The temperature dependent resistance of seven devices are measured from 290 K down to 10 K. The thermal excitation model dominating the transport properties at the high temperature regime (above {$\sim$}60 K) is demonstrated and the low temperature electron transport is governed by the variable-range hopping (VRH) mechanism. Moreover, we observed a transition from Efros\textendash Shklovskii to Mott VRH at {$\sim$}25 K over the entire VRH conduction regime, which is well described by a universal scaling law.},
  langid = {english}
}

@article{li2018high,
  title = {High {{Mobilities}} in {{Layered InSe Transistors}} with {{Indium-Encapsulation-Induced Surface Charge Doping}}},
  author = {Li, Mengjiao and Lin, Che-Yi and Yang, Shih-Hsien and Chang, Yuan-Ming and Chang, Jen-Kuei and Yang, Feng-Shou and Zhong, Chaorong and Jian, Wen-Bin and Lien, Chen-Hsin and Ho, Ching-Hwa and Liu, Heng-Jui and Huang, Rong and Li, Wenwu and Lin, Yen-Fu and Chu, Junhao},
  year = {2018},
  journal = {Advanced Materials},
  volume = {30},
  number = {44},
  pages = {1803690},
  issn = {1521-4095},
  doi = {10.1002/adma.201803690},
  abstract = {Tunability and stability in the electrical properties of 2D semiconductors pave the way for their practical applications in logic devices. A robust layered indium selenide (InSe) field-effect transistor (FET) with superior controlled stability is demonstrated by depositing an indium (In) doping layer. The optimized InSe FETs deliver an unprecedented high electron mobility up to 3700 cm2 V-1 s-1 at room temperature, which can be retained with 60\% after 1 month. Further insight into the evolution of the position of the Fermi level and the microscopic device structure with different In thicknesses demonstrates an enhanced electron-doping behavior at the In/InSe interface. Furthermore, the contact resistance is also improved through the In insertion between InSe and Au electrodes, which coincides with the analysis of the low-frequency noise. The carrier fluctuation is attributed to the dominance of the phonon scattering events, which agrees with the observation of the temperature-dependent mobility. Finally, the flexible functionalities of the logic-circuit applications, for instance, inverter and not-and (NAND)/not-or (NOR) gates, are determined with these surface-doping InSe FETs, which establish a paradigm for 2D-based materials to overcome the bottleneck in the development of electronic devices.},
  langid = {english},
  keywords = {device,EDS,FET,flake,Heterostructure,InSe ε (2H),mobility,mobility-time,Raman,Raman peaks,SEM,TEM,XRD}
}

@article{li2018largea,
  title = {Large Disparity between Optical and Fundamental Band Gaps in Layered {{In}}{\textsubscript{2}}{{Se}}{\textsubscript{3}}},
  author = {Li, Wei and Sabino, Fernando P. and {Crasto de Lima}, Felipe and Wang, Tianshi and Miwa, Roberto H. and Janotti, Anderson},
  year = {2018},
  month = oct,
  journal = {Physical Review B},
  volume = {98},
  number = {16},
  pages = {165134},
  doi = {10.1103/PhysRevB.98.165134},
  abstract = {In2Se3 is a semiconductor material that can be stabilized in different crystal structures (at least one 3D and several 2D layered structures have been reported) with diverse electrical and optical properties. This feature has plagued its characterization over the years, with reported band gaps varying in an unacceptable range of 1 eV. Using first-principles calculations based on density functional theory and the HSE06 hybrid functional, we investigate the structural and electronic properties of four layered phases of In2Se3, addressing their relative stability and the nature of their fundamental band gaps, i.e., direct versus indirect. Our results show large disparities between fundamental and optical gaps. The absorption coefficients are found to be as high as those in direct-gap III-V semiconductors. The band alignment with respect to conventional semiconductors indicate a tendency to n-type conductivity, explaining recent experimental observations.},
  keywords = {Band gap,band structure,computation,In2Se3 α,In2Se3 α (3R),In2Se3 α',In2Se3 β,In2Se3 γ,In2Se3 δ,phase transition,phase transition α-β,structure},
  annotation = {00000 11 citations (Crossref) [2021-02-02]}
}

@article{li2019dimensional,
  title = {Dimensional {{Crossover}} in the {{Carrier Mobility}} of {{Two-Dimensional Semiconductors}}: {{The Case}} of {{InSe}}},
  shorttitle = {Dimensional {{Crossover}} in the {{Carrier Mobility}} of {{Two-Dimensional Semiconductors}}},
  author = {Li, Wenbin and Ponc{\'e}, Samuel and Giustino, Feliciano},
  year = {2019},
  month = mar,
  journal = {Nano Letters},
  volume = {19},
  number = {3},
  pages = {1774--1781},
  publisher = {{American Chemical Society}},
  issn = {1530-6984},
  doi = {10.1021/acs.nanolett.8b04799},
  abstract = {Two-dimensional (2D) semiconductors are at the center of an intense research effort aimed at developing the next generation of flexible, transparent, and energy-efficient electronics. In these applications, the carrier mobility, that is the ability of electrons and holes to move rapidly in response to an external voltage, is a critical design parameter. Here, we show that the interlayer coupling between electronic wave functions in 2D semiconductors can be used to drastically alter carrier mobility and dynamics. We demonstrate this concept by performing state-of-the-art ab initio calculations for InSe, a prototypical 2D semiconductor that is attracting considerable attention, because of its exceptionally high electron mobility. We show that the electron mobility of InSe can be increased from 100 cm2 V\textendash 1 s\textendash 1 to 1000 cm2 V\textendash 1 s\textendash 1 by exploiting the dimensional crossover of the electronic density of states from two dimensions to three dimensions. By generalizing our results to the broader class of layered materials, we discover that dimensionality plays a universal role in the transport properties of 2D semiconductors.},
  keywords = {DFT,InSe β (2H)}
}

@article{li2019nonvolatile,
  title = {Nonvolatile Charge Memory with Optical Controllability in Two-Terminal Pristine {$\alpha$}-{{In}}{\textsubscript{2}}{{Se}}{\textsubscript{3}} Nanosheets},
  author = {Li, Qinliang and Yuan, Cailei and Yu, Ting and Wang, Qisheng and Li, Jingbo},
  year = {2019},
  month = dec,
  journal = {Journal of Physics D: Applied Physics},
  volume = {53},
  number = {7},
  pages = {075108},
  publisher = {{IOP Publishing}},
  issn = {0022-3727},
  doi = {10.1088/1361-6463/ab5737},
  abstract = {Two-dimensional (2D) materials offer a promising platform for next-generation data-storage devices due to their unique planar structure, as well as brilliant electronic properties. However, the reported 2D materials-based nonvolatile memory devices have complicated architectures with multilayer stacking of 2D materials, metals, organics or oxides, which limits their capacity for device miniaturization, scalability and integration functionality. In this work, we propose a nonvolatile charge memory in pristine {$\alpha$}-In2Se3 nanosheets with a two-terminal configuration. We present a programmable nonvolatile charge memory via applying gate voltage pulses. The devices show superb memory properties at room temperature with a large memory window, long retention time and robust endurance, which are comparable with 2D material heterostructures. Further, we demonstrate an optical manipulation of charge storage with laser power-controlled numbers of stored charges and on/off ratio. Supported by a theoretical model, we find the nonvolatile charge storage originates from the surficial/interfacial trapped electrons, which are removed via photo-generated holes. Our photo-tunable nonvolatile charge memory devices with simple structure pave the way towards large-scale integration and high-speed intelligent electronics, such as ultrafast remote operation on data coding, artificial synapse and neurons.},
  langid = {english},
  keywords = {charge trapping,device,EDX,ferroelectric,FeSmFET,flake,In2Se3 α,photo-transport,Raman,TEM,XRD},
  annotation = {00000}
}

@article{li2020orthogonal,
  title = {Orthogonal {{Electric Control}} of the {{Out-Of-Plane Field-Effect}} in {{2D Ferroelectric}} {$\alpha$}-{{In}}{\textsubscript{2}}{{Se}}{\textsubscript{3}}},
  author = {Li, Yue and Chen, Chen and Li, Wei and Mao, Xiaoyu and Liu, Heng and Xiang, Jianyong and Nie, Anmin and Liu, Zhongyuan and Zhu, Wenguang and Zeng, Hualing},
  year = {2020},
  month = jun,
  journal = {Advanced Electronic Materials},
  volume = {n/a},
  number = {n/a},
  pages = {2000061},
  issn = {2199-160X},
  doi = {10.1002/aelm.202000061},
  abstract = {Tuning the electric properties of crystalline solids is at the heart of material science and electronics. Generating the electric field-effect via an external voltage is a clean, continuous, and systematic method. Here, utilizing the unique electric dipole locking in van der Waals (vdW) ferroelectric {$\alpha$}-In2Se3, a new approach is reported to establish the electric gating effect, where the electrostatic doping in the out-of-plane direction is induced and controlled by an in-plane voltage. With the vertical vdW heterostructure of ultrathin {$\alpha$}-In2Se3 and MoS2, an in-plane voltage gated coplanar field-effect transistor with distinguished and retentive on/off ratio is validated. The results demonstrate unprecedented electric control of ferroelectricity, which paves the way for integrating 2D ferroelectric into novel nanoelectronic devices with broad applications.},
  copyright = {\textcopyright{} 2020 The Authors. Published by WILEY-VCH Verlag GmbH \& Co. KGaA, Weinheim},
  langid = {english},
  keywords = {device,FeFET,ferroelectric,In2Se3 α (3R),PFM,STEM},
  annotation = {00000}
}

@article{liang2018improved,
  title = {Improved Performance of {{InSe}} Field-Effect Transistors by Channel Encapsulation},
  author = {Liang, Guangda and Wang, Yiming and Han, Lin and Yang, Zai-Xing and Xin, Qian and Kudrynskyi, Zakhar R. and Kovalyuk, Zakhar D. and Patan{\`e}, Amalia and Song, Aimin},
  year = {2018},
  month = may,
  journal = {Semiconductor Science and Technology},
  volume = {33},
  number = {6},
  pages = {06LT01},
  publisher = {{IOP Publishing}},
  issn = {0268-1242},
  doi = {10.1088/1361-6641/aab62b},
  abstract = {Due to the high electron mobility and photo-responsivity, InSe is considered as an excellent candidate for next generation electronics and optoelectronics. In particular, in contrast to many high-mobility two-dimensional (2D) materials, such as phosphorene, InSe is more resilient to oxidation in air. Nevertheless, its implementation in future applications requires encapsulation techniques to prevent the adsorption of gas molecules on its surface. In this work, we use a common lithography resist, poly(methyl methacrylate) (PMMA) to encapsulate InSe-based field-effect transistors (FETs). The encapsulation of InSe by PMMA improves the electrical stability of the FETs under a gate bias stress, and increases both the drain current and electron mobility. These findings indicate the effectiveness of the PMMA encapsulation method, which could be applied to other 2D materials.},
  langid = {english},
  keywords = {AFM,FET,flake,InSe γ (3R),mobility}
}

@article{liang2018raman,
  title = {Raman Spectroscopy Characterization of Two-Dimensional Materials},
  author = {Liang, Fang and Xu, Hejun and Wu, Xing and Wang, Chaolun and Luo, Chen and Zhang, Jian},
  year = {2018},
  month = mar,
  journal = {Chinese Physics B},
  volume = {27},
  number = {3},
  pages = {037802},
  publisher = {{IOP Publishing}},
  issn = {1674-1056},
  doi = {10.1088/1674-1056/27/3/037802},
  abstract = {Two-dimensional (2D) materials have become a hot study topic in recent years due to their outstanding electronic, optical, and thermal properties. The unique band structures of strong in-plane chemical bonds and weak out-of-plane van der Waals (vdW) interactions make 2D materials promising for nanodevices and various other applications. Raman spectroscopy is a powerful and non-destructive characterization tool to study the properties of 2D materials. In this work, we review the research on the characterization of 2D materials with Raman spectroscopy. In addition, we discuss the application of the Raman spectroscopy technique to semiconductors, superconductivity, photoelectricity, and thermoelectricity.},
  langid = {english},
  keywords = {review article}
}

@article{liang2021intercorrelated,
  title = {Intercorrelated Ferroelectrics in {{2D}} van Der {{Waals}} Materials},
  author = {Liang, Yan and Shen, Shiying and Huang, Baibiao and Dai, Ying and Ma, Yandong},
  year = {2021},
  month = jun,
  journal = {Materials Horizons},
  volume = {8},
  number = {6},
  pages = {1683--1689},
  publisher = {{The Royal Society of Chemistry}},
  issn = {2051-6355},
  doi = {10.1039/D1MH00446H},
  abstract = {2D intercorrelated ferroelectrics, exhibiting a coupled in-plane and out-of-plane ferroelectricity, is a fundamental phenomenon in the field of condensed-mater physics. The current research is based on the paradigm of bi-directional inversion asymmetry in single-layers, which restricts 2D intercorrelated ferroelectrics to extremely few systems. Herein, we propose a new scheme for achieving 2D intercorrelated ferroelectrics using van der Waals (vdW) interaction, and apply this scheme to a vast family of 2D vdW materials. Using first-principles, we demonstrate that 2D vdW multilayers, for example, BN, MoS2, InSe, CdS, PtSe2, TI2O, SnS2, Ti2CO2etc., can exhibit coupled in-plane and out-of-plane ferroelectricity, thus yielding 2D intercorrelated ferroelectric physics. We further predict that such intercorrelated ferroelectrics could demonstrate many distinct properties, for example, electrical full control of spin textures in trilayer PtSe2 and electrical permanent control of valley-contrasting physics in four-layer VS2. Our finding opens a new direction for 2D intercorrelated ferroelectric research.},
  langid = {english},
  keywords = {DFT,ferroelectric}
}

@article{likforman1978structure,
  title = {Structure Cristalline Du S\'el\'eniure d'indium {{In}}{\textsubscript{2}}{{Se}}{\textsubscript{3}}},
  author = {Likforman, A. and Carr{\'e}, D. and Hillel, R.},
  year = {1978},
  month = jan,
  journal = {Acta Crystallographica Section B},
  volume = {34},
  number = {1},
  pages = {1--5},
  publisher = {{International Union of Crystallography (IUCr)}},
  issn = {0567-7408},
  doi = {10/csb8tk},
  annotation = {00000  ZSCC: 0000100}
}

@article{likforman1980transitions,
  title = {{Transitions de la forme de haute temp\'erature {$\alpha$} de In\textsubscript{2}Se\textsubscript{3}, de part et d'autre de la temp\'erature ambiante}},
  author = {Likforman, Anna and Fourcroy, Paul-Henri and Guittard, Micheline and Flahaut, Jean and Poirier, Raymond and Szydlo, Nicolas},
  year = {1980},
  month = jun,
  journal = {Journal of Solid State Chemistry},
  volume = {33},
  number = {1},
  pages = {91--97},
  issn = {0022-4596},
  doi = {10.1016/0022-4596(80)90551-4},
  abstract = {The high-temperature form of In2Se3, {$\alpha$}, encompasses several hexagonal or rhombohedral polytypes, having the same fundamental basis, hexagonal a1 = 4.02\AA{} and c1 = 9.56\AA, and having c parameters which are integral multiples of c1. The {$\alpha$} form is stable above 550\textdegree C. Its transformation into {$\gamma$}-In2Se3 is relatively slow, and only possible just below the transition temperature\textemdash between about 400 and 550\textdegree C. At ordinary temperature, it exists in a metastable state, but on heating a transformation occurs at 200\textdegree C involving the formation of a new form, {$\beta$}-In2Se3, which seems also to be metastable. This again exists in several polytypic forms depending on the type of parent {$\alpha$} form. The {$\alpha$}(2) polytype has a metal/nonmetal transition at 200 K.},
  langid = {french}
}

@article{lin2018indium,
  title = {Indium Selenide Monolayer: A Two-Dimensional Material with Strong Second Harmonic Generation},
  shorttitle = {Indium Selenide Monolayer},
  author = {Lin, Jing and Fang, Zhenxing and Tao, Huilin and Li, Yi and Huang, Xin and Ding, Kaining and Huang, Shuping and Zhang, Yongfan},
  year = {2018},
  journal = {CrystEngComm},
  volume = {20},
  number = {18},
  pages = {2573--2582},
  doi = {10.1039/c8ce00154e},
  langid = {english},
  keywords = {DFT,In2Se3 α (2H),In2Se3 α (3R),InSe,second harmonic generation},
  annotation = {00006}
}

@book{lindemuth2020hall,
  title = {Hall {{Effect Measurement Handbook}}: {{A Fundamental Tool}} for {{Semiconductor Material Characterization}}},
  shorttitle = {Hall {{Effect Measurement Handbook}}},
  author = {Lindemuth, Jeffrey},
  year = {2020},
  month = mar,
  publisher = {{Lake Shore Cryotronics, Incorporated}},
  googlebooks = {sW1fzQEACAAJ},
  isbn = {978-1-73470-780-9},
  langid = {english}
}

@article{liu2016van,
  title = {Van Der {{Waals}} Heterostructures and Devices},
  author = {Liu, Yuan and Weiss, Nathan O. and Duan, Xidong and Cheng, Hung-Chieh and Huang, Yu and Duan, Xiangfeng},
  year = {2016},
  month = jul,
  journal = {Nature Reviews Materials},
  volume = {1},
  number = {9},
  pages = {1--17},
  issn = {2058-8437},
  doi = {10.1038/natrevmats.2016.42},
  abstract = {With a dangling-bond-free surface, two dimensional layered materials (2DLMs) can enable the creation of diverse van der Waals heterostructures (vdWHs) without the conventional constraint of lattice matching or process compatibility. This Review discusses the recent advances in exploring 2DLM vdWHs for future electronics and optoelectronics.},
  copyright = {2016 Macmillan Publishers Limited},
  langid = {english},
  annotation = {00566}
}

@article{liu2018approaching,
  title = {Approaching the {{Schottky}}\textendash{{Mott}} Limit in van Der {{Waals}} Metal\textendash Semiconductor Junctions},
  author = {Liu, Yuan and Guo, Jian and Zhu, Enbo and Liao, Lei and Lee, Sung-Joon and Ding, Mengning and Shakir, Imran and Gambin, Vincent and Huang, Yu and Duan, Xiangfeng},
  year = {2018},
  month = may,
  journal = {Nature},
  volume = {557},
  number = {7707},
  pages = {696--700},
  issn = {1476-4687},
  doi = {10.1038/s41586-018-0129-8},
  abstract = {In metal\textendash semiconductor junctions, interfacial bonding and disorder cause deviations from theoretical predictions for the energy barrier, but delicately transferring pre-fabricated metal films onto two-dimensional semiconductors can overcome this challenge.},
  copyright = {2018 Macmillan Publishers Ltd., part of Springer Nature},
  langid = {english}
}

@article{liu2018mechanisms,
  title = {Mechanisms of {{Pyroelectricity}} in {{Three-}} and {{Two-Dimensional Materials}}},
  author = {Liu, Jian and Pantelides, Sokrates T.},
  year = {2018},
  month = may,
  journal = {Physical Review Letters},
  volume = {120},
  number = {20},
  pages = {207602},
  publisher = {{American Physical Society}},
  doi = {10.1103/physrevlett.120.207602},
  abstract = {Pyroelectricity is a very promising phenomenon in three- and two-dimensional materials, but first-principles calculations have not so far been used to elucidate the underlying mechanisms. Here we report density-functional theory (DFT) calculations based on the Born-Szigeti theory of pyroelectricity, by combining fundamental thermodynamics and the modern theory of polarization. We find satisfactory agreement with experimental data in the case of bulk benchmark materials, showing that the so-called electron-phonon renormalization, whose contribution has been traditionally viewed as negligible, is important. We predict out-of-plane pyroelectricity in the recently synthesized Janus MoSSe monolayer and in-plane pyroelectricity in the group-IV monochalcogenide GeS monolayer. It is notable that the so-called secondary pyroelectricity is found to be dominant in GeS monolayer. The present work opens a theoretical route to study the pyroelectric effect using DFT and provides a valuable tool in the search for new candidates for pyroelectric applications.},
  annotation = {00014  ZSCC: 0000014}
}

@article{liu2019atomically,
  title = {Atomically {{Resolving Polymorphs}} and {{Crystal Structures}} of {{In}}{\textsubscript{2}}{{Se}}{\textsubscript{3}}},
  author = {Liu, Lixuan and Dong, Jiyu and Huang, Junquan and Nie, Anmin and Zhai, Kun and Xiang, Jianyong and Wang, Bochong and Wen, Fusheng and Mu, Congpu and Zhao, Zhisheng and Gong, Yongji and Tian, Yongjun and Liu, Zhongyuan},
  year = {2019},
  month = dec,
  journal = {Chemistry of Materials},
  volume = {31},
  number = {24},
  pages = {10143--10149},
  publisher = {{American Chemical Society}},
  issn = {0897-4756},
  doi = {10.1021/acs.chemmater.9b03499},
  abstract = {The structures of the various phases endow In2Se3 unique properties as well as a broad range of potential applications. However, the controversy on the structures of In2Se3 strongly hinders the exploitation of its properties and potentially gives rise to misdirection of its applications. Here, taking advantage of state-of-the-art aberration-corrected scanning transmission electron microscopy, we demonstrate the atomic-scale structures of lab-created and purchased In2Se3 compounds. Six phases in three polymorphs at room temperature have been observed among all the samples, which include 2H and 3R {$\alpha$}-In2Se3, 1T, 2H, and 3R {$\beta$}-In2Se3, and none-layered {$\gamma$}-In2Se3. Raman spectra are directly correlated to individual In2Se3 phases, providing fingerprints for identifying various phases of In2Se3. In addition, obvious out-of-plane ferroelectricity of 2H {$\alpha$}-In2Se3 was also observed by piezoresponse force microscopy, enabling its potential application in ferroelectric devices.},
  keywords = {crystal structure,ferroelectric,HAADF STEM,In2Se3 α (2H),In2Se3 α (3R),In2Se3 β (1T),In2Se3 β (2H),In2Se3 β (3R),In2Se3 γ,PFM,Raman,Raman peaks,TEM,Well explained},
  annotation = {00000  ZSCC: 0000000  3 citations (Crossref) [2021-02-02]}
}

@article{liu2019pyroelectric,
  title = {Pyroelectric Response and Temperature-Induced {$\alpha$}-{$\beta$} Phase Transitions in {$\alpha$}-{{In}}{\textsubscript{2}}{{Se}}{\textsubscript{3}} and Other {$\alpha$}-{{III}}{\textsubscript{2}}{{VI}}{\textsubscript{3}} ({{III}}\,\,=\,\,{{Al}}, {{Ga}}, {{In}}; {{VI}}\,\,=\,\,{{S}}, {{Se}}) Monolayers},
  author = {Liu, J. and Pantelides, S. T.},
  year = {2019},
  journal = {2D Materials},
  volume = {6},
  number = {2},
  pages = {025001},
  issn = {2053-1583},
  doi = {10.1088/2053-1583/aaf946},
  abstract = {The pyroelectric response of materials is a promising phenomenon that is used in many applications, but two-dimensional (2D) pyroelectricity has not received due attention. Here we report ab initio molecular dynamics simulations to investigate the pyroelectric effect in {$\alpha$} -III 2 VI 3 (III = Al, Ga, In; VI = S, Se) monolayers, an emerging class of 2D pyroelectric materials. The in-plane and out-of-plane spontaneous polarizations are found to be robust at room temperature. We demonstrate large pyroelectric response in these materials that is associated with temperature-induced ferroelectric-to-paraelectric phase transitions. Identifying the high-temperature nonpolar phase as the {$\beta$} -phase, we demonstrate strong displacive character in the {$\alpha$} - {$\beta$} phase transition, which is achieved through relative displacements of the top three and bottom two atomic sublayers in opposite directions. The present work unravels and highlights the primary pyroelectric effect and the {$\alpha$} - {$\beta$} phase transitions that are responsible for the promising pyroelectricity in {$\alpha$} -III 2 VI 3 monolayers.},
  langid = {english},
  keywords = {computation,DFT,ferroelectric,In2Se3 α,In2Se3 β,In2Se3 β',phase transition,phase transition pressure,phase transition α-β,pyroelectric},
  annotation = {00000}
}

@article{liu2019quasi2d,
  title = {Quasi-{{2D Transport}} and {{Weak Antilocalization Effect}} in {{Few-layered VSe2}}},
  author = {Liu, Hongtao and Bao, Lihong and Zhou, Zhang and Che, Bingyu and Zhang, Ruizi and Bian, Ce and Ma, Ruisong and Wu, Liangmei and Yang, Haifang and Li, Junjie and Gu, Changzhi and Shen, Cheng-Min and Du, Shixuan and Gao, Hong-Jun},
  year = {2019},
  month = jul,
  journal = {Nano Letters},
  volume = {19},
  number = {7},
  pages = {4551--4559},
  publisher = {{American Chemical Society}},
  issn = {1530-6984},
  doi = {10.1021/acs.nanolett.9b01412},
  abstract = {With strong spin\textendash orbit coupling (SOC), ultrathin two-dimensional (2D) transitional metal chalcogenides (TMDs) are predicted to exhibit weak antilocalization (WAL) effect at low temperatures. The observation of WAL effect in VSe2 is challenging due to the relative weak SOC and three-dimensional (3D) transport nature in thick VSe2. Here, we report on the observation of quasi-2D transport and WAL effect in sublimed-salt-assisted low-temperature chemical vapor deposition (CVD) grown few-layered high-quality VSe2 nanosheets. The WAL magnitudes in magnetoconductance can be perfectly fitted by the 2D Hikami\textendash Larkin\textendash Nagaoka (HLN) equation in the presence of strong SOC, by which the spin\textendash orbit scattering length lSO and phase coherence length l{$\phi$} have been extracted. The phase coherence length l{$\phi$} shows a power law dependence with temperature, l{$\phi\sim~$}T\textendash 1/2, revealing an electron\textendash electron interaction-dominated dephasing mechanism. Such sublimed-salt-assisted growth of high-quality few-layered VSe2 and the observation of WAL pave the way for future spintronic and valleytronic applications.},
  file = {C\:\\Users\\ffdra\\Zotero\\storage\\2KYYS6EW\\acs.nanolett.html}
}

@article{liu2020ferroelectricgated,
  title = {Ferroelectric-{{Gated InSe Photodetectors}} with {{High On}}/{{Off Ratios}} and {{Photoresponsivity}}},
  author = {Liu, Li and Wu, Liangmei and Wang, Aiwei and Liu, Hongtao and Ma, Ruisong and Wu, Kang and Chen, Jiancui and Zhou, Zhang and Tian, Yuan and Yang, Haitao and Shen, Chengmin and Bao, Lihong and Qin, Zhihui and Pantelides, Sokrates T. and Gao, Hong-Jun},
  year = {2020},
  month = sep,
  journal = {Nano Letters},
  volume = {20},
  number = {9},
  pages = {6666--6673},
  publisher = {{American Chemical Society}},
  issn = {1530-6984},
  doi = {10.1021/acs.nanolett.0c02448},
  abstract = {Indium selenide (InSe) has a high electron mobility and tunable direct band gap, enabling its potential applications to electronic and optoelectronic devices. Here, we report the fabrication of InSe photodetectors with high on/off ratios and ultrahigh photoresponsivity, using ferroelectric poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) copolymer films as the top-gate dielectric. Benefiting from the successful suppression of the dark current down to {$\sim$}10\textendash 14A in the InSe channel by tuning the three different polarization states in ferroelectric P(VDF-TrFE) and improved interface properties using h-BN as a substrate, the ferroelectric-gated InSe photodetectors show a high on/off ratio of over 108, a high photoresponsivity up to 14 250 AW\textendash 1, a high detectivity up to 1.63 \texttimes{} 1013 Jones, and a fast response time of 600 {$\mu$}s even at zero-gate voltage. The present results highlight the role of ferroelectric P(VDF-TrFE) in tuning the carrier transport of InSe and may provide an avenue for the development of InSe-based photodetectors.},
  keywords = {device,flake,hBN,Heterostructure,InSe γ (3R),mobility},
  annotation = {ZSCC: 0000000[s0]}
}

@article{liu2021cryogenic,
  title = {Cryogenic {{Characteristics}} of {{Multinanoscales Field-Effect Transistors}}},
  author = {Liu, Yan and Lang, Lili and Chang, Yongwei and Shan, Yi and Chen, Xiaojie and Dong, Yemin},
  year = {2021},
  month = feb,
  journal = {IEEE Transactions on Electron Devices},
  volume = {68},
  number = {2},
  pages = {456--463},
  issn = {1557-9646},
  doi = {10.1109/TED.2020.3041438},
  abstract = {The cryogenic performance of multinanoscale CMOS transistors with a standard 55-nm Si-bulk technology is systematically investigated by dc measurements. In contrast to 300 K, the cryogenic drain saturation current (Idsat) gain significantly enhances from 54\% to 167\% with the increasing channel length and has a relatively weak response to width change. In addition, the degraded subthreshold swing (SS) due to the short channel effect is alleviated at lower temperatures. The merits of a typical nMOS transistor (W/L = 0.6 {$\mu$}m/60 nm) worked at 4.2 K are associated with an improved Idsat ( 1.3 times), decreased drain leakage current with three orders of magnitude, and 2/3 reduced SS. However, the cryogenic Idsat tends to saturate below 10 K and the threshold voltage increases, as well as barrier lowering induced by drain voltage, starts to deteriorate. The detailed analyses on these MOSFET (deep) cryogenic characteristics are implemented based on the comprehensive semiconductor physics images, including energy band change, temperature/geometry-dependent scattering, band-to-band tunneling process, and depletion width influence. Our findings will be beneficial for the community to design ultralow temperature-integrated circuits.},
  keywords = {Cryogenic,Cryogenics,drain saturation current,geometry effect,leakage current,MOSFET,MOSFET circuits,Silicon,subthreshold swing (SS),Temperature,threshold voltage,Threshold voltage,Transistors}
}

@article{liu2021inplane,
  title = {In-Plane Anisotropic Electronic Properties in Layered {$A{'}$}-{{In}}{\textsubscript{2}}{{Se}}{\textsubscript{3}}},
  author = {Liu, Zhun and Wu, Jing and Li, Jingbo},
  year = {2021},
  month = jul,
  journal = {Journal of Applied Physics},
  volume = {130},
  number = {1},
  pages = {015103},
  publisher = {{American Institute of Physics}},
  issn = {0021-8979},
  doi = {10.1063/5.0050979},
  abstract = {In2Se3 polymorphs have been extensively studied because of their diverse physical properties such as piezoelectricity, photoelectricity, and ferroelectricity, thereby showing plentiful promising applications in integrated electronic devices. These diverse properties are strongly dependent on or affected by their atomic bonding arrangement in the crystal phases. Combining lattice symmetry and local atomic perturbation, we demonstrate a novel layered {$\alpha{'}$}-In2Se3 phase by using the first-principles calculations, which is reconstructed from the inverted tetrahedral bonding configuration by the in-plane displacive middle layer Se atom. The optimized structure of monolayer {$\alpha{'}$}-In2Se3 has triple degenerated atomic configurations with different Se atom orientations. We noted that these degenerated atomic configurations exhibit a moderate switching barrier (about 61\,meV/f.u.) between them. To further explore this atom-oriented anisotropic property in {$\alpha{'}$}-In2Se3, the electronic properties were studied with an orthorhombic unit cell. The comparative results for the orthogonal Se atom orientations suggest that the nonbonding orbital coupling of the displacive Se atoms induces large in-plane anisotropic optical absorption and electrical transport properties. This study of the layered {$\alpha{'}$}-In2Se3 phase can extend the realm of switchable anisotropic optoelectronic applications in future electronic devices.},
  keywords = {DFT,In2Se3 α'}
}

@misc{lor,
  title = {{{LOR}} and {{PMGI Resists Datasheet}}},
  publisher = {{Microchem}},
  annotation = {00000},
  file = {C\:\\Users\\ffdra\\Zotero\\storage\\7FUA38FZ\\RevPMGI-Resists-data-sheetV-rhcedit-100311.pdf}
}

@article{lu2018electrically,
  title = {Electrically Induced, Non-Volatile, Metal Insulator Transition in a Ferroelectric-Controlled {{MoS2}} Transistor},
  author = {Lu, Zhongyuan and Serrao, Claudy and Khan, Asif I. and Clarkson, James D. and Wong, Justin C. and Ramesh, Ramamoorthy and Salahuddin, Sayeef},
  year = {2018},
  month = jan,
  journal = {Applied Physics Letters},
  volume = {112},
  number = {4},
  pages = {043107},
  publisher = {{American Institute of Physics}},
  issn = {0003-6951},
  doi = {10.1063/1.5005004},
  abstract = {We demonstrate an electrically induced, non-volatile, metal-insulator phase transition in a MoS2 transistor. A ferroelectric capacitor made of single crystalline, epitaxially grown PbZr0.2Ti0.8O3 was connected to the gate of a field effect thin film MoS2 transistor. When a voltage is applied to this ferroelectric capacitor, a clear transition from an insulator to a metal and vice versa is observed in the transistor. Importantly, when the biased voltage is turned off, the remnant polarization in the ferroelectric can keep the MoS2 in its original phase, thereby providing a non-volatile state. Thus, a metallic or insulating phase can be written, erased, or retained simply by biasing the externally connected ferroelectric capacitor.}
}

@article{lupascu2018semiconductor,
  title = {Semiconductor {{Effects}} in {{Ferroelectrics}}},
  author = {Lupascu, Doru C. and Anusca, Irina and Etier, Morad and Gao, Yanling and Lackner, Gerhard and Nazrabi, Ahmadshah and Sanlialp, Mehmet and Trivedi, Harshkumar and {Ul-Haq}, Naveed and Schr{\"o}der, J{\"o}rg},
  year = {2018},
  journal = {Ferroic Functional Materials},
  pages = {97--178},
  publisher = {{Springer, Cham}},
  doi = {10.1007/978-3-319-68883-1_3},
  abstract = {In this textbook ferroelectrics have so far been dealt with as insulators. External electric fields can and will induce polarization in any insulating material. This is dielectricity. On top of this,...},
  langid = {english},
  annotation = {00002}
}

@article{lutz1988zur,
  title = {{Zur polymorphie des In\textsubscript{2}Se\textsubscript{3}}},
  author = {Lutz, H. D and Fischer, M and Baldus, H.{\textendash}P. and Blachnik, R},
  year = {1988},
  month = oct,
  journal = {Journal of the Less Common Metals},
  volume = {143},
  number = {1},
  pages = {83--92},
  issn = {0022-5088},
  doi = {10/b8bbsz},
  abstract = {Zusammenfassung Die Phasenverh\"altnisse des polymorphen In2Se3 wurden mit Hilfe von R\"ontgenheizaufnahmen untersucht. Die bei Raumtemperatur stabile Modifikation {$\gamma$}-In2Se3 (hP30) mit vier-und f\"unffacher Koordination des Indiums zeigt bei 960 K eine Phasenumwandlung in das dichter gepackte {$\beta$}-In2Se3(H) (hP10) (KZ = 6?), welches bei 1080 K in das stark fehlgeordnete {$\delta$}-In2Se3 (hP5) \"ubergeht. Beim Abk\"uhlen der Hochtemperaturformen erh\"alt man gew\"ohnlich nicht {$\gamma$}-In2Se3, sondern Varianten des {$\beta$}-In2Se3, n\"amlich {$\alpha$}-In2Se3(H) ({$\alpha$}(2)-In2Se3) (hP10) und {$\alpha$}-In2Se3(R) ({$\alpha$}(3)-In2Se3) (hR5), die beim Aufheizen \"uber die ebenfalls metastabilen Formen {$\beta$}'-In2Se3 (hP15) und {$\beta$}-In2Se3(R) (hR5) in das stabile {$\gamma$}-In2Se3 \"ubergehen. Bei Raumtemperatur stabil bzw. metastabil sind nur {$\gamma$}-In2Se3, {$\alpha$}-In2Se3(H) und {$\alpha$}-In2Se3(R). Die Infrarotspektren und r\"ontgenographischen Dichten der verschiedenen polymorphen Formen des In2Se3 sowie die Art der Phasenumwandlungen werden diskutiert. The phase relationships of polymorphic In2Se3 were reinvestigated by high-temperature X-ray powder studies. The modification, which is (contrary to most references) stable at room temperature, is {$\gamma$}-In2Se3 (hP30) with four-fold and fivefold coordinated indium ions. Above 960 K {$\gamma$}-In2Se3 undergoes a phase transition to the more dense (CN = 6?) {$\beta$}-In2Se3(H) (hP10), which changes to {$\delta$}-In2Se3 (hP5) above 1080 K. On cooling the high-temperature polymorphs to ambient temperature the stable {$\gamma$}-In2Se3 is not normally obtained, but metastable variants of {$\beta$}-In2Se3, viz. {$\alpha$}-In2Se3(H) ({$\alpha$}(2)-In2Se3) (hP10) or {$\alpha$}-In2Se3(R) ({$\alpha$}(3)-In2Se3) (hR5), which transform on heating via the similarly metastable {$\beta$}'-In2Se3 (hP15) and {$\beta$}-In2Se3(R) (hR5), respectively, into {$\gamma$}-In2Se3. The only stable or metastable polymorphs which exist at ambient temperature are {$\gamma$}-In2Se3, {$\alpha$}-In2Se3(H) and {$\alpha$}-In2Se3(R). The IR spectra and X-ray densities of the various polymorphs of In2Se3 as well as the phase transitions are discussed in terms of the possible structures.},
  langid = {german},
  keywords = {In2Se3 α,In2Se3 α (2H),In2Se3 α (3R),In2Se3 β,In2Se3 β (2H),In2Se3 β',In2Se3 γ,In2Se3 δ},
  annotation = {00000  ZSCC: 0000031}
}

@article{lv2015twodimensional,
  title = {Two-Dimensional Transition Metal Dichalcogenides: {{Clusters}}, Ribbons, Sheets and More},
  shorttitle = {Two-Dimensional Transition Metal Dichalcogenides},
  author = {Lv, Ruitao and Terrones, Humberto and El{\'i}as, Ana Laura and {Perea-L{\'o}pez}, N{\'e}stor and Guti{\'e}rrez, Humberto R. and {Cruz-Silva}, Eduardo and Rajukumar, Lakshmy Pulickal and Dresselhaus, Mildred S. and Terrones, Mauricio},
  year = {2015},
  month = oct,
  journal = {Nano Today},
  volume = {10},
  number = {5},
  pages = {559--592},
  issn = {1748-0132},
  doi = {10.1016/j.nantod.2015.07.004},
  abstract = {Monolayers of transition metal dichalcogenides (TMDs), such as MoS2 and WS2, have recently triggered worldwide research interest due to their remarkable optical and electronic properties. More fascinatingly is the fact that these monolayers could also adopt various morphologies with exposed edges that include triangular, hexagonal or star-shaped clusters, in addition to nanoribbons. Exciting progress has been recently achieved in the synthesis, characterization, device fabrication and functionalization of these monolayer and few-layer TMDs. This article firstly reviews the properties of bulk and monolayer/few-layer TMDs. The ``top-down'' and ``bottom-up'' synthesis routes for different TMDs are then summarized. Raman spectroscopy is now becoming a key tool used to characterize atomically thin TMDs, and this review will show the latest advances using this spectroscopic technique. Here we also summarize the most relevant characterization techniques, optical/electronic device fabrication, functionalization and defect engineering of TMDs. There are numerous opportunities for applications and multiple challenges to overcome, and this review will be instructive and useful to researchers working in the area of 2-dimensional materials, as well as scientists and engineers interested in their applications in electronics, optics, catalysis, energy and many others.},
  langid = {english},
  keywords = {Few layers,Layered materials,Molybdenum disulfide,Monolayers,Tungsten disulfide,Two-dimensional}
}

@article{lv2021layerdependent,
  title = {Layer-Dependent Ferroelectricity in {{2H-stacked}} Few-Layer {$\alpha$}-{{In}}{\textsubscript{2}}{{Se}}{\textsubscript{3}}},
  author = {Lv, Baohua and Yan, Zhi and Xue, Wuhong and Yang, Ruilong and Li, Jiayi and Ci, Wenjuan and Pang, Ruixue and Zhou, Peng and Liu, Gang and Liu, Zhongyuan and Zhu, Wenguang and Xu, Xiaohong},
  year = {2021},
  journal = {Materials Horizons},
  publisher = {{Royal Society of Chemistry}},
  doi = {10/gjg8tc},
  langid = {english},
  keywords = {crystal structure,EDS,In2Se3 α (2H),PFM,Raman,Raman peaks,rectifying junction,STEM,XRD},
  annotation = {00000}
}

@article{lyu2020thicknessdependent,
  title = {Thickness-Dependent Band Gap of {$\alpha$}-{{In}}{\textsubscript{2}}{{Se}}{\textsubscript{3}}: From Electron Energy Loss Spectroscopy to Density Functional Theory Calculations},
  shorttitle = {Thickness-Dependent Band Gap of {$\alpha$}-{{In2Se3}}},
  author = {Lyu, Fengjiao and Sun, Yuanwei and Yang, Qin and Tang, Bin and Li, Mingqiang and Li, Zhiwei and Sun, Mei and Gao, Peng and Ye, Lin-Hui and Chen, Qing},
  year = {2020},
  month = may,
  journal = {Nanotechnology},
  volume = {31},
  number = {31},
  pages = {315711},
  publisher = {{IOP Publishing}},
  issn = {0957-4484},
  doi = {10.1088/1361-6528/ab8998},
  abstract = {{$\alpha$}-In2Se3 has attracted increasing attention in recent years due to its excellent electrical and optical properties. Especially, attention has been paid to its peculiar ferroelectric and piezoelectric properties which most other two-dimensional (2D) materials do not possess. This paper presents the first measurement of the thickness-dependent band gaps of few-layer {$\alpha$}-In2Se3 by electron energy loss spectroscopy (EELS). The band gap increases with decreasing film thickness which varies from 1.44 eV in a 48 nm thick area to 1.64 eV in an 8 nm thick area of the samples. Further, by combining the improved exchange-correlation potential and proper screening of the internal electric field in an advanced 2D electronic structure technique, we have been able to obtain the structural dependence of the band gap within density functional theory up to hundreds of atoms. This is also the first calculation of a similar type for 2D ferroelectric materials. Both experiment and theory suggest that the variation of the band gap of {$\alpha$}-In2Se3 fits well with the quantum confinement model for 2D materials.},
  langid = {english},
  keywords = {Band gap,EELS,In2Se3 α (2H),STEM,TEM,XRD}
}

@misc{m4l,
  title = {{{M4L RF Gas Plasma System}}},
  journal = {PVA TePla America, Inc.},
  abstract = {The M4L\texttrademark{} is our most popular full featured plasma surface modification system designed for laboratory and production use.},
  annotation = {00000}
}

@article{ma2002why,
  title = {Why Is Nonvolatile Ferroelectric Memory Field-Effect Transistor Still Elusive?},
  author = {Ma, T.P. and {Jin-Ping Han}},
  year = {2002},
  month = jul,
  journal = {IEEE Electron Device Letters},
  volume = {23},
  number = {7},
  pages = {386--388},
  issn = {1558-0563},
  doi = {10.1109/led.2002.1015207},
  abstract = {In principle, a memory field-effect transistor (FET) based on the metal-ferroelectric-semiconductor gate stack could be the building block of an ideal memory technology that offers random access, high speed, low power, high density and nonvolatility. In practice, however, so far none of the reported ferroelectric memory transistors has achieved a memory retention time of more than a few days, a far cry from the ten-year retention requirement for a nonvolatile memory device. This work will examine two major causes of the short retention (assuming no significant mobile ionic charge motion in the ferroelectric film): 1) depolarization field and 2) finite gate leakage current. A possible solution to the memory retention problem will be suggested, which involves the growth of single-crystal, single domain ferroelectric on Si. The use of the ferroelectric memory transistor as a capacitor-less DRAM cell will also be proposed.},
  keywords = {Capacitance,depolarization field,dielectric depolarisation,DRAM cell,Ferroelectric films,Ferroelectric materials,ferroelectric storage,FETs,finite gate leakage current,high density,high speed,Leakage current,leakage currents,low power,Magnetic force microscopy,memory field-effect transistor,metal-ferroelectric-metal structure,metal-ferroelectric-semiconductor gate stack,MISFET,nonvolatile ferroelectric memory,Nonvolatile memory,random access,random-access storage,Semiconductor memory,short retention,single-crystal single domain ferroelectric,Voltage},
  annotation = {00000  ZSCC: 0000335}
}

@article{ma2020rich,
  title = {Rich Information on {{2D}} Materials Revealed by Optical Second Harmonic Generation},
  author = {Ma, He and Liang, Jing and Hong, Hao and Liu, Kehai and Zou, Dingxin and Wu, Muhong and Liu, Kaihui},
  year = {2020},
  month = nov,
  journal = {Nanoscale},
  volume = {12},
  number = {45},
  pages = {22891--22903},
  publisher = {{The Royal Society of Chemistry}},
  issn = {2040-3372},
  doi = {10.1039/d0nr06051h},
  abstract = {Two-dimensional (2D) materials have brought a spectacular revolution in fundamental research and industrial applications due to their unique physical properties of atomically thin thickness, strong light\textendash matter interaction, unity valley polarization and enhanced many-body interactions. To fully explore their exotic physical properties and facilitate potential applications in electronics and optoelectronics, an effective and versatile characterization method is highly demanded. Among the many methods of characterization, optical second harmonic generation (SHG) has attracted broad attention because of its sensitivity, versatility and simplicity. The SHG technique is sufficiently sensitive at the atomic scale and therefore suitable for studies on 2D materials. More importantly, it has the capacity to acquire abundant information ranging from crystallographic, and electronic, to magnetic properties in various 2D materials due to its sensitivity to both spatial-inversion symmetry and time-reversal symmetry. These advantages accompanied by its characteristics of non-invasion and high throughput make SHG a powerful tool for 2D materials. This review summarizes recent experimental developments of SHG applications in 2D materials and also provides an outlook of potential prospects based on SHG.},
  langid = {english},
  keywords = {review article},
  annotation = {00000}
}

@article{maekawa1981magnetoresistance,
  title = {Magnetoresistance in {{Two-Dimensional Disordered Systems}}: {{Effects}} of {{Zeeman Splitting}} and {{Spin-Orbit Scattering}}},
  shorttitle = {Magnetoresistance in {{Two-Dimensional Disordered Systems}}},
  author = {Maekawa, Sadamichi and Fukuyama, Hidetoshi},
  year = {1981},
  month = aug,
  journal = {Journal of the Physical Society of Japan},
  volume = {50},
  number = {8},
  pages = {2516--2524},
  publisher = {{The Physical Society of Japan}},
  issn = {0031-9015},
  doi = {10.1143/jpsj.50.2516},
  abstract = {Effects of Zeeman splitting and spin-orbit scattering on the resistance in two-dimensional disordered systems are theoretically studied. The field dependence of the magnetoresistance is shown to have the characteristic anisotropy. The present theory explains the qualitative features of the experimental observations by Komori  et al.  in Cu granular films.},
  annotation = {00000}
}

@book{mahan2010condensed,
  title = {Condensed {{Matter}} in a {{Nutshell}}},
  author = {Mahan, Gerald},
  year = {Sun, 10/24/2010 - 12:00},
  publisher = {{Princeton University Press}},
  isbn = {978-0-691-14016-2},
  langid = {english}
}

@article{maisonneuve1995roomtemperature,
  title = {Room-Temperature Crystal Structure of the Layered Phase {{CuIInIIIP2S6}}},
  author = {Maisonneuve, V. and Evain, M. and Payen, C. and Cajipe, V. B. and Molini{\'e}, P.},
  year = {1995},
  month = mar,
  journal = {Journal of Alloys and Compounds},
  volume = {218},
  number = {2},
  pages = {157--164},
  issn = {0925-8388},
  doi = {10.1016/0925-8388(94)01416-7},
  abstract = {The room-temperature structure of CuInP2S6 was determined using single-crystal X-ray diffraction. It crystallizes in the monoclinic symmetry, space group Cc, with the lattice parameters a = 6.0956(4) \AA, b = 10.5645(6) \AA, c = 13.6230(8) \AA, {$\beta$} = 107.101(3)\textdegree, V = 838.5(1) \AA{} and Z = 4. As for CuCrP2S6 and CuVP2S6, the layered structure consists of a succession of (SCuI13InIII13(P2)13S) slabs separated by empty van der Waals gaps. Within a slab, the octahedral voids defined by the ABC close-packed array of sulfur are filled by the metal cations and P2 groups such that a triangular two-dimensional sublattice is formed by each of them. The Cu(I) ions are distributed on two inequivalent off-center sites with occupation ratios of about 0.9 and 0.1 per octahedron, and the In(III) ions are displaced from the center of their octahedra.},
  langid = {english},
  keywords = {Copper,Indium,Thiophosphate,X-Ray structure determination}
}

@article{maisonneuve1997ferrielectric,
  title = {Ferrielectric Ordering in Lamellar {{CuInP2S6}}},
  author = {Maisonneuve, V. and Cajipe, V. B. and Simon, A. and Von Der Muhll, R. and Ravez, J.},
  year = {1997},
  month = nov,
  journal = {Physical Review B},
  volume = {56},
  number = {17},
  pages = {10860--10868},
  publisher = {{American Physical Society}},
  doi = {10.1103/PhysRevB.56.10860},
  abstract = {The lamellar compound CuInP2S6 is presented as an unusual example of a collinear, two-sublattice ferrielectric system. Single-crystal x-ray diffraction is used to study the thermal evolution of the polar character of its structure. The results are consistent with the occurrence of a first-order, order-disorder transition at Tc=315K and provide indirect evidence for copper hopping motions. Estimates for the spontaneous polarization are calculated at various temperatures from the atomic coordinates and found to agree well with dielectric measurements. The example of CuInP2S6 suggests that cooperative dipole behavior may generally arise when d10 cations (e.g., CuI and InIII) susceptible to second-order Jahn-Teller distortions are embedded in a matrix of restricted dimensionality.}
}

@article{manfra2007transport,
  title = {Transport and {{Percolation}} in a {{Low-Density High-Mobility Two-Dimensional Hole System}}},
  author = {Manfra, M. J. and Hwang, E. H. and Das Sarma, S. and Pfeiffer, L. N. and West, K. W. and Sergent, A. M.},
  year = {2007},
  month = dec,
  journal = {Physical Review Letters},
  volume = {99},
  number = {23},
  pages = {236402},
  publisher = {{American Physical Society}},
  doi = {10.1103/PhysRevLett.99.236402},
  abstract = {We present a study of the temperature and density dependence of the resistivity of an extremely high quality two-dimensional hole system grown on the (100) surface of GaAs. For high densities in the metallic regime (p{$\greaterequivlnt$}4\texttimes 109 cm-2), the nonmonotonic temperature dependence ({$\sim$}50\textendash 300 mK) of the resistivity is consistent with temperature dependent screening of residual impurities. At a fixed temperature of T=50 mK, the conductivity versus density data indicate an inhomogeneity driven percolation-type transition to an insulating state at a critical density of 3.8\texttimes 109 cm-2.}
}

@article{manolikas1988new,
  title = {New Results on the Phase Transformations of {{In}}{\textsubscript{2}}{{Se}}{\textsubscript{3}}},
  author = {Manolikas, C.},
  year = {1988},
  month = jun,
  journal = {Journal of Solid State Chemistry},
  volume = {74},
  number = {2},
  pages = {319--328},
  issn = {0022-4596},
  doi = {10/fhm3vg},
  abstract = {The various phases and the phase transformations of In2Se3 are studied by electron microscopy and electron diffraction methods. Specimens from crystal slices perpendicular to the hexagonal basal plane were used. The results were combined with those reported by J. van Landuytet al. (1) for specimens parallel to the basal plane. It is found that the various {$\alpha$}(n)-polytypic forms of In2Se3 follow similar transformation paths by heating above room temperature. The ultimate {$\delta$}-phase is cation disordered with a wurtzite-like average structure. Apart from the {$\gamma$}-phase, the intermediate phases are characterized by highly faulted sequences of structure sheets along thec-axis.},
  langid = {english},
  keywords = {In2Se3 α (2H),In2Se3 α (3R),In2Se3 α',In2Se3 β,In2Se3 β',In2Se3 γ,In2Se3 δ,phase transition,phase transition β' temperature},
  annotation = {00027  ZSCC: 0000027}
}

@article{marsillac1996experimental,
  title = {Experimental Evidence of the Low-Temperature Formation of {$\gamma$}-{{In}}{\textsubscript{2}}{{Se}}{\textsubscript{3}} Thin Films Obtained by a Solid-State Reaction},
  author = {Marsillac, S. and {Combot-Marie}, A. M. and Bern{\`e}de, J. C. and Conan, A.},
  year = {1996},
  month = nov,
  journal = {Thin Solid Films},
  volume = {288},
  number = {1},
  pages = {14--20},
  issn = {0040-6090},
  doi = {10/cjg8wq},
  abstract = {In2Se3 coatings were obtained by a solid-state reaction, induced by annealing, between the In and Se constituents sequentially deposited in thin film form. The films crystallized in the {$\gamma$}-In2Se3 phase. To confirm and to characterize this phase, the films have been investigated by microprobe analysis and X-ray photoelectron spectroscopy, transmission electron microscopy and X-ray diffraction, Raman diffusion and optical absorption measurements. It is shown that selected area diffraction (SAD) patterns of the {$\gamma$}-In2Se3 phase are obtained and that a very good correlation exists between the planes obtained from X-ray spectra and SAD patterns. Raman diffusion and optical absorption also lead to characteristic data of the {$\gamma$}-In2Se3 phase, and are compared with the values of the other phases. Moreover it is shown that the occurrence of the {$\gamma$}-phase is related to the annealing under selenium atmosphere and to the initial Se/In atomic ratio.},
  langid = {english},
  keywords = {Annealing,Crystallization,In2Se3 γ,Selenides,Transmission electron microscopy},
  annotation = {00000  ZSCC: NoCitationData[s0]}
}

@article{martin2019characterizing,
  title = {Characterizing {{Ferroelectricity}} with an {{Atomic Force Microscopy}}: {{An All-Around Technique}}},
  shorttitle = {Characterizing {{Ferroelectricity}} with an {{Atomic Force Microscopy}}},
  author = {Martin, Simon and Gautier, Brice and Baboux, Nicolas and Gruverman, Alexei and {Carretero-Genevrier}, Adrian and Gich, Mart{\'i} and Gomez, Andres},
  year = {2019},
  journal = {Electrical Atomic Force Microscopy for Nanoelectronics},
  pages = {173--203},
  publisher = {{Springer, Cham}},
  doi = {10.1007/978-3-030-15612-1_6},
  abstract = {Atomic Force Microscopy (AFM) arises as an all-in-one characterization technique, capable of measuring several physical quantities by slight equipment's modifications. In particular, for piezo and...},
  langid = {english},
  keywords = {review article}
}

@article{matsuo2017indirect,
  title = {Indirect Measurements of Electrocaloric Effect in Ferroelectric Thin Films by Positive-up-Negative-down Method},
  author = {Matsuo, Shogo and Yamada, Tomoaki and Kamo, Takafumi and Funakubo, Hiroshi and Yoshino, Masahito and Nagasaki, Takanori},
  year = {2017},
  journal = {Journal of the Ceramic Society of Japan},
  volume = {125},
  number = {6},
  pages = {441--444},
  doi = {10.2109/jcersj2.16283},
  abstract = {Positive-up-negative-down (PUND) polarization measurement was employed to indirectly estimate the electrocaloric (EC) effect in ferroelectric films. By subtracting the conductive component from the observed charge profile, the polarization values at various electric fields and temperatures were precisely determined. The estimated EC effect for an epitaxial Ba0.3Sr0.7O3 thin film fabricated on SrRuO3/SrTiO3 (001) substrate showed the largest temperature change at around the ferroelectric-paraelectric phase transition temperature, which agrees with the theoretical prediction. On the other hand, the EC effect estimated by the conventional hysteresis loop measurement showed different peaking temperature from the theoretical prediction. The deviation became larger with lowering the measurement frequency. The observed results indicate the importance of precise evaluation of polarization for the examined temperature-electric field space.},
  keywords = {Electrocaloric effect,Ferroelectric,Films,Indirect measurement},
  annotation = {00000}
}

@article{matsuura2000calculation,
  title = {Calculation of Band Bending in Ferroelectric Semiconductor},
  author = {Matsuura, Hideharu},
  year = {2000},
  month = apr,
  journal = {New Journal of Physics},
  volume = {2},
  pages = {8--8},
  publisher = {{IOP Publishing}},
  issn = {1367-2630},
  doi = {10.1088/1367-2630/2/1/008},
  abstract = {In order to investigate the electronic characteristics of ferroelectric thin films that behave as semiconductors, we derive an equation to calculate the band bending in ferroelectrics, to replace the Poisson equation. We find that the space-charge density term, , in the Poisson equation should be replaced by - P r , where P r is the remanent polarization. In order to simplify the band bending calculation, only one dimension is considered here. For example, in the case of the 3 V band bending in a metal-semiconductor Schottky barrier junction with a 1 \textmu m thick ferroelectric semiconductor, the depletion region extends over the whole semiconductor, even with a dielectric constant of 10 and a donor density of 1 \texttimes{} 1017 cm-3 due to dP r /dx . However, the depletion layer width in a semiconductor without remanent polarization is only about 0.18 \textmu m under the same conditions.},
  langid = {english}
}

@article{mccreary2016synthesis,
  title = {Synthesis of {{Large-Area WS}}{\textsubscript{2}} Monolayers with {{Exceptional Photoluminescence}}},
  author = {McCreary, Kathleen M. and Hanbicki, Aubrey T. and Jernigan, Glenn G. and Culbertson, James C. and Jonker, Berend T.},
  year = {2016},
  month = jan,
  journal = {Scientific Reports},
  volume = {6},
  number = {1},
  pages = {19159},
  publisher = {{Nature Publishing Group}},
  issn = {2045-2322},
  doi = {10.1038/srep19159},
  abstract = {Monolayer WS2 offers great promise for use in optical devices due to its direct bandgap and high photoluminescence intensity. While fundamental investigations can be performed on exfoliated material, large-area and high quality materials are essential for implementation of technological applications. In this work, we synthesize monolayer WS2 under various controlled conditions and characterize the films using photoluminescence, Raman and x-ray photoelectron spectroscopies. We demonstrate that the introduction of hydrogen to the argon carrier gas dramatically improves the optical quality and increases the growth area of WS2, resulting in films exhibiting mm2 coverage. The addition of hydrogen more effectively reduces the WO3 precursor and protects against oxidative etching of the synthesized monolayers. The stoichiometric WS2 monolayers synthesized using Ar\,+\,H2 carrier gas exhibit superior optical characteristics, with photoluminescence emission full width half maximum (FWHM) values below 40\,meV and emission intensities nearly an order of magnitude higher than films synthesized in a pure Ar environment.},
  copyright = {2016 The Author(s)},
  langid = {english}
}

@misc{megaposit,
  title = {Megaposit {{SPR3000 Series Photoresist Datasheet}}},
  publisher = {{Rohm and Haas Electronic Materials}},
  annotation = {00000},
  file = {C\:\\Users\\ffdra\\Zotero\\storage\\5ESPPSSR\\SPR3000_Photoresist.pdf}
}

@article{meir2001percolationtype,
  title = {Percolation-Type Description of the Metal\textendash Insulator Transition in Two Dimensions},
  author = {Meir, Yigal},
  year = {2001},
  month = dec,
  journal = {Physica A: Statistical Mechanics and its Applications},
  series = {Proc. {{Int}}. {{Workshop}} on {{Frontiers}} in the {{Physics}} of {{Complex Systems}}},
  volume = {302},
  number = {1},
  pages = {391--403},
  issn = {0378-4371},
  doi = {10.1016/S0378-4371(01)00458-7},
  abstract = {A simple non-interacting-electron model, combining local quantum tunneling via quantum point contacts and global classical percolation, is introduced [Y. Meir, Phys. Rev. Lett. 83 (1999) 3506] in order to describe the observed ``metal\textendash insulator transition'' in two dimensions. Here, based upon that model, a two-species-percolation scaling theory is introduced and compared to the experimental data. It is shown that many features of the experiments, such as the exponential dependence of the resistance on temperature on the metallic side, the linear dependence of the exponent on density, the e2/h scale of the critical resistance, the quenching of the metallic phase by a parallel magnetic field and the non-monotonic dependence of the critical density on a perpendicular magnetic field, can be naturally explained by the model. Moreover, details such as the non-monotonic dependence of the resistance on temperature or the inflection point of the resistance vs. parallel magnetic field are also a natural consequence of the theory. The calculated parallel field dependence of the critical density agrees excellently with experiments, and is used to deduce an experimental value of the confining energy in the vertical direction.},
  langid = {english}
}

@article{mennel2018optical,
  title = {Optical Imaging of Strain in Two-Dimensional Crystals},
  author = {Mennel, Lukas and Furchi, Marco M. and Wachter, Stefan and Paur, Matthias and Polyushkin, Dmitry K. and Mueller, Thomas},
  year = {2018},
  month = feb,
  journal = {Nature Communications},
  volume = {9},
  number = {1},
  pages = {516},
  issn = {2041-1723},
  doi = {10.1038/s41467-018-02830-y},
  abstract = {Strain is an effective tool to tune the optoelectronic properties of two-dimensional materials. Here, the authors demonstrate that second harmonic generation can be used to extract the full strain tensor of MoS2 and to spatially image its two-dimensional strain field.},
  copyright = {2018 The Author(s)},
  langid = {english},
  annotation = {00000}
}

@article{micocci1991electrical,
  title = {Electrical {{Characterization}} of {{In}}{\textsubscript{2}}{{Se}}{\textsubscript{3}} {{Single Crystals}}},
  author = {Micocci, G. and Tepore, A. and Rella, R. and Siciliano, P.},
  year = {1991},
  journal = {physica status solidi (a)},
  volume = {126},
  number = {2},
  pages = {437--442},
  issn = {1521-396X},
  doi = {10.1002/pssa.2211260214},
  abstract = {Resistivity and Hail effect measurements are performed in the temperature range between 10 and 400 K on In2Se3 crystals grown by the Bridgman-Stockbarger method. The temperature dependence of the electron mobility can be explained by combining the lattice and the neutral impurity scatterings. Moreover, the electrical properties are dominated by donor centers with ionization energy between 60 and 90 meV. The conduction band density of states effective mass was estimated to be 0.24m0.},
  langid = {english}
}

@article{mikolajick2021next,
  title = {Next Generation Ferroelectric Materials for Semiconductor Process Integration and Their Applications},
  author = {Mikolajick, T. and Slesazeck, S. and Mulaosmanovic, H. and Park, M. H. and Fichtner, S. and Lomenzo, P. D. and Hoffmann, M. and Schroeder, U.},
  year = {2021},
  month = mar,
  journal = {Journal of Applied Physics},
  volume = {129},
  number = {10},
  pages = {100901},
  publisher = {{American Institute of Physics}},
  issn = {0021-8979},
  doi = {10.1063/5.0037617},
  abstract = {Ferroelectrics are a class of materials that possess a variety of interactions between electrical, mechanical, and thermal properties that have enabled a wealth of functionalities. To realize integrated systems, the integration of these functionalities into semiconductor processes is necessary. To this end, the complexity of well-known ferroelectric materials, e.g., the perovskite class, causes severe issues that limit its applications in integrated systems. The discovery of ferroelectricity in hafnium oxide-based materials brought a renewed interest into this field during the last decade. Very recently, ferroelectricity was also verified in aluminum scandium nitride extending the potential of seeing a wealth of ferroelectric functions in integrated electronics in the future. This paper discusses the prospects of both material systems in various applications.}
}

@article{mistewicz2019ferroelectricphotovoltaic,
  title = {A {{Ferroelectric-Photovoltaic Effect}} in {{SbSI Nanowires}}},
  author = {Mistewicz, Krystian and Nowak, Marian and Str{\'o}{\.z}, Danuta},
  year = {2019},
  month = apr,
  journal = {Nanomaterials},
  volume = {9},
  number = {4},
  pages = {580},
  publisher = {{Multidisciplinary Digital Publishing Institute}},
  doi = {10.3390/nano9040580},
  abstract = {A ferroelectric-photovoltaic effect in nanowires of antimony sulfoiodide (SbSI) is presented for the first time. Sonochemically prepared SbSI nanowires have been characterized using high-resolution transmission electron microscopy (HRTEM) and optical diffuse reflection spectroscopy (DRS). The temperature dependences of electrical properties of the fabricated SbSI nanowires have been investigated too. The indirect forbidden energy gap EgIf = 1.862 (1) eV and Curie temperature TC = 291 (2) K of SbSI nanowires have been determined. Aligned SbSI nanowires have been deposited in an electric field between Pt electrodes on alumina substrate. The photoelectrical response of such a prepared ferroelectric-photovoltaic (FE-PV) device can be switched using a poling electric field and depends on light intensity. The photovoltage, generated under \&lambda; = 488 nm illumination of Popt = 127 mW/cm2 optical power density, has reached UOC = 0.119 (2) V. The presented SbSI FE-PV device is promising for solar energy harvesting as well as for application in non-volatile memories based on the photovoltaic effect.},
  langid = {english},
  keywords = {antimony sulfoiodide (SbSI),ferroelectric,nanodevices,nanowires,photovoltaic effect,SbSI}
}

@book{moiz2016space,
  title = {Space {{Charge}}\textendash{{Limited Current Model}} for {{Polymers}}},
  author = {Moiz, Syed A. and Khan, Iqbal A. and Younis, Waheed A. and S.
Karimov, Khasan},
  year = {2016},
  month = oct,
  journal = {Conducting Polymers},
  publisher = {{IntechOpen}},
  doi = {10.5772/63527},
  abstract = {Polymers have exceptional charge transport mechanism as a combination of delocalization and localization of charge carriers with intramolecular and intermolecular charge interaction, respectively, and most of the time, it is interpreted with Mott-Gurney space charge\textendash limited current model. As polymers are full of traps, therefore, Mott-Gurney space charge\textendash limited model is modified with various trap distributions as trapped space charge\textendash limited model. The most crucial parameter affected by the nature and distribution of traps is the carrier mobility, and it is argued that space charge\textendash limited model is an acceptable choice for the mobility measurement for polymer. Similarly, in order to account the commonly observed lowering of trap barrier height at higher electric field, the Mott-Gurney space charge\textendash limited current is further modified with little variations, which are evaluated and discussed in detail.},
  isbn = {978-953-51-2691-1},
  langid = {english}
}

@article{moon2019anomalous,
  title = {Anomalous {{Conductance}} near {{Percolative Metal}}\textendash{{Insulator Transition}} in {{Monolayer MoS2}} at {{Low Voltage Regime}}},
  author = {Moon, Byoung Hee and Bae, Jung Jun and Han, Gang Hee and Kim, Hyun and Choi, Homin and Lee, Young Hee},
  year = {2019},
  month = jun,
  journal = {ACS Nano},
  volume = {13},
  number = {6},
  pages = {6631--6637},
  publisher = {{American Chemical Society}},
  issn = {1936-0851},
  doi = {10.1021/acsnano.9b00755},
  abstract = {Conductivity of the insulating phase increases generally at an elevated drain\textendash source voltage due to the field-enhanced hopping or heating effect. Meanwhile, a transport mechanism governed by percolation in a low compensated semiconductor gives rise to the reduced conductivity at a low-field regime. Here, in addition to this behavior, we report the anomalous conductivity behavior to transform from a percolative metallic to an insulating phase at the low voltage regime in monolayer molybdenum disulfide (MoS2). Percolation transport at low source\textendash drain voltage is governed by inhomogeneously distributed potential in strongly interacting monolayer MoS2 with a substrate, distinct from the quantum phase transition in multilayer MoS2. At a high source\textendash drain voltage regime, the insulating phase is transformed further to a metallic phase, exhibiting multiphases of metallic\textendash insulating\textendash metallic transitions in monolayer MoS2. These behaviors highlight MoS2 as a model system to study various classical and quantum transports as well as metal\textendash insulator transition in two-dimensional systems.}
}

@article{moon2020quantum,
  title = {Quantum Critical Scaling for Finite-Temperature {{Mott-like}} Metal-Insulator Crossover in Few-Layered {{MoS}}{\textsubscript{2}}},
  author = {Moon, Byoung Hee and Han, Gang Hee and Radonji{\'c}, Milo{\v s} M. and Ji, Hyunjin and Dobrosavljevi{\'c}, Vladimir},
  year = {2020},
  month = dec,
  journal = {Physical Review B},
  volume = {102},
  number = {24},
  pages = {245424},
  publisher = {{American Physical Society}},
  doi = {10.1103/PhysRevB.102.245424},
  abstract = {The dominant role of strong electron-electron interactions in driving two-dimensional metal-insulator transitions has long been debated, but its clear experimental demonstration is still not available. Here, we examine the finite-temperature transport behavior of few-layered MoS2 material in the vicinity of the density-driven metal-insulator transition, revealing previously overlooked universal features characteristic of strongly correlated electron systems. Our scaling analysis, based on the Wigner-Mott theoretical viewpoint, conclusively demonstrates that the transition is driven by strong electron-electron interactions and not disorder, in striking resemblance to what is seen in other Mott systems. Our results provide compelling evidence that transition-metal dichalcogenides provide an ideal testing ground, and should open an exciting avenue for the study of strong correlation physics.}
}

@article{moon2021metalinsulator,
  title = {Metal-Insulator Transition in Two-Dimensional Transition Metal Dichalcogenides},
  author = {Moon, Byoung Hee},
  year = {2021},
  month = mar,
  journal = {Emergent Materials},
  issn = {2522-574X},
  doi = {10.1007/s42247-021-00202-9},
  abstract = {The emergence of layered transition metal dichalcogenides has invigorated interests in the challenging problem of metal-insulator transition in two dimensions. The observed clearly distinctive conductivity dependences on temperature show diverse characteristic features of metal-insulator transition depending on the material thickness from which the relative strength of disorder and carrier-carrier interactions can be modulated. These various properties provoked several different proposals for the responsible transition mechanism, providing ideal testing grounds for the study of two-dimensional metal-insulator transition. In this article, we overview the current progresses and challenging issues in the study of metal-insulator transition in two-dimensional layered transition metal dichalcogenides.},
  langid = {english}
}

@article{mott1949basis,
  title = {The {{Basis}} of the {{Electron Theory}} of {{Metals}}, with {{Special Reference}} to the {{Transition Metals}}},
  author = {Mott, N. F.},
  year = {1949},
  month = jul,
  journal = {Proceedings of the Physical Society. Section A},
  volume = {62},
  number = {7},
  pages = {416--422},
  publisher = {{IOP Publishing}},
  issn = {0370-1298},
  doi = {10.1088/0370-1298/62/7/303},
  abstract = {It is shown that the collective electron and London-Heitler models are not to be regarded as different approximations to the same exact wave function for solids in which, according to the former model, there is a partially filled zone of energy levels. It can thus be shown why nickel oxide in the pure state is a non-conductor, although it contains an incomplete zone. The properties of the metals nickel, palladium and platinum are discussed in the light of these results; platinum differs from nickel in that the orbital contribution to the moment of the elementary magnets is not quenched. A discussion is given of x-ray absorption edges, and it is shown why exciton lines are absent for metals.},
  langid = {english}
}

@article{mudd2016directtoindirect,
  title = {The Direct-to-Indirect Band Gap Crossover in Two-Dimensional van Der {{Waals Indium Selenide}} Crystals},
  author = {Mudd, G. W. and Molas, M. R. and Chen, X. and Z{\'o}lyomi, V. and Nogajewski, K. and Kudrynskyi, Z. R. and Kovalyuk, Z. D. and Yusa, G. and Makarovsky, O. and Eaves, L. and Potemski, M. and Fal'ko, V. I. and Patan{\`e}, A.},
  year = {2016},
  month = dec,
  journal = {Scientific Reports},
  volume = {6},
  number = {1},
  pages = {39619},
  publisher = {{Nature Publishing Group}},
  issn = {2045-2322},
  doi = {10.1038/srep39619},
  abstract = {The electronic band structure of van der Waals (vdW) layered crystals has properties that depend on the composition, thickness and stacking of the component layers. Here we use density functional theory and high field magneto-optics to investigate the metal chalcogenide InSe, a recent addition to the family of vdW layered crystals, which transforms from a direct to an indirect band gap semiconductor as the number of layers is reduced. We investigate this direct-to-indirect bandgap crossover, demonstrate a highly tuneable optical response from the near infrared to the visible spectrum with decreasing layer thickness down to 2 layers, and report quantum dot-like optical emissions distributed over a wide range of energy. Our analysis also indicates that electron and exciton effective masses are weakly dependent on the layer thickness and are significantly smaller than in other vdW crystals. These properties are unprecedented within the large family of vdW crystals and demonstrate the potential of InSe for electronic and photonic technologies.},
  copyright = {2016 The Author(s)},
  langid = {english},
  keywords = {Band gap,DFT,InSe γ (3R),photoluminescence},
  annotation = {Bandiera\_abtest: a Cc\_license\_type: cc\_by Cg\_type: Nature Research Journals Primary\_atype: Research Subject\_term: Two-dimensional materials Subject\_term\_id: two-dimensional-materials}
}

@phdthesis{murray2020nonlinear,
  title = {Nonlinear {{Optical Characterization}} with {{Instrumentation Development}}},
  author = {Murray, William},
  year = {2020},
  month = oct,
  langid = {english},
  school = {Pennsylvania State University},
  keywords = {⛔ No DOI found}
}

@article{murray2020second,
  title = {Second Harmonic Generation in Two-Dimensional Transition Metal Dichalcogenides with Growth and Post-Synthesis Defects},
  author = {Murray, William and Lucking, Michael and Kahn, Ethan and Zhang, Tianyi and Fujisawa, Kazunori and {Perea-Lopez}, Nestor and Elias, Ana Laura and Terrones, Humberto and Terrones, Mauricio and Liu, Zhiwen},
  year = {2020},
  month = aug,
  journal = {2D Materials},
  volume = {7},
  number = {4},
  pages = {045020},
  publisher = {{IOP Publishing}},
  issn = {2053-1583},
  doi = {10.1088/2053-1583/aba564},
  langid = {english}
}

@article{mustafa2010effect,
  title = {Effect of Indium Concentration on the Electrical Properties of {{InSe}} Alloy},
  author = {Mustafa, Falah I. and Gupta, Shikha and Goyal, N. and Tripathi, S. K.},
  year = {2010},
  month = oct,
  journal = {Physica B: Condensed Matter},
  volume = {405},
  number = {19},
  pages = {4087--4091},
  issn = {0921-4526},
  doi = {10.1016/j.physb.2010.06.006},
  abstract = {InxSe1-x (x=0.4, 0.5, 0.6) thin films are deposited at room temperature on glass substrates by thermal evaporation technique. The X-ray diffraction analysis showed that both the as-deposited films In2Se3 and InSe (x=0.4 and 0.5) are amorphous in nature while the as-deposited films of In3Se2 are polycrystalline. Scanning electron microscopy (SEM) photographs of these samples have been taken. The dc measurements are made on the InxSe1-x films at all concentrations, in the temperature range 100\textendash 400K. The obtained results revealed three distinct regions. Temperature dependence of conductivity are analyzed by three mechanisms: extended state conductivity, conduction in band tail and conduction in localized sites. It is clear from the results that at high temperatures conductivity mechanism obeys the law ln{$\sigma\propto$}1/T and at low temperatures: ln{$\sigma\propto$}T-1/4, indicating variable range hopping energy in the localized states near the Fermi level N (EF). The incorporation of In atoms in Se matrix leads to an increase in the electrical conductivity and decrease in the thermal activation energy. The change in the above parameters will be discussed in terms of the phase transition, which takes place in InxSe1-x thin films.},
  langid = {english},
  keywords = {film,In2Se3,InSe,Resistivity/conductivity,Resistivity/conductivity-temperature,SEM,variable range hopping,XRD}
}

@misc{nano,
  title = {Nano {{PMGI Resists Datasheet}}},
  publisher = {{Microchem}},
  annotation = {00000},
  file = {C\:\\Users\\ffdra\\Zotero\\storage\\WRBZP4BU\\Data_PMGI.pdf}
}

@misc{nanostrip,
  title = {Nanostrip},
  journal = {VWR},
  abstract = {Nano-Strip\textregistered{} is a stabilized formulation of sulfuric acid and hydrogen peroxide compounds. It removes positive and nega\-tive resists and other organic materials used in various applications of semiconductor photolithography. It contains high purity reagents required for high yield semiconductor manufacturing.},
  howpublished = {https://us.vwr.com/store/product/18918557/nanostrip},
  annotation = {00144}
}

@book{neamen2002semiconductor,
  title = {Semiconductor {{Physics And Devices}}},
  author = {Neamen, Donald},
  year = {2002},
  edition = {Third},
  publisher = {{McGraw-Hill, Inc.}},
  address = {{USA}},
  abstract = {Neamen's Semiconductor Physics and Devices, Third Edition. deals with the electrical properties and characteristics of semiconductor materials and devices. The goal of this book is to bring together quantum mechanics, the quantum theory of solids, semiconductor material physics, and semiconductor device physics in a clear and understandable way. Table of contents Prologue Semiconductor and the Integrated Circuit 1 The Crystal Structure of Solids 2 Introduction to Quantum Mechanics 3 Introduction to the Quantum Theory of Solids 4 The Semiconductor in Equilibrium 5 Carrier Transport Phenomena 6 Nonequilibrium Excess Carriers in Semiconductors 7 The pn Junction 8 The pn Junction Diode 9 Metal-Semiconductor and Semiconductor Heterojunctions 10 The Bipolar Transistor 11 Fundamentals of the Metal-Oxide-Semiconductor Field-Effect Transistor 12 Metal-Oxide-Semiconductor Field-Effect Transistor: Additional Concepts 13 The Junction Field-Effect Transistor 14 Optical Devices 15 Semiconductor Power Devices Appendix A Selected List of Symbols Appendix B System of Units, Conversion Factors, and General Constants Appendix C The Periodic Table Appendix D The Error Function Appendix E "Derivation" of Schrodinger's Wave Equation Appendix F Unit of Energy- The Electron-Volt Appendix G Answers to Selected Problems},
  isbn = {978-0-07-232107-4}
}

@article{nenashev2018release,
  title = {Release of Carriers from Traps Enhanced by Hopping},
  author = {Nenashev, A. V. and Valkovskii, V. V. and Oelerich, J. O. and Dvurechenskii, A. V. and Semeniuk, O. and Reznik, A. and Gebhard, F. and Baranovskii, S. D.},
  year = {2018},
  month = oct,
  journal = {Physical Review B},
  volume = {98},
  number = {15},
  pages = {155207},
  publisher = {{American Physical Society}},
  doi = {10.1103/PhysRevB.98.155207},
  abstract = {Trapping of electrons in localized states strongly affects optoelectronic phenomena in disordered semiconductors. In this paper, it is shown by numerical simulations and by analytical calculations that the release of the trapped electrons into the conduction band can be substantially enhanced by hopping of electrons between the traps. The effect strongly depends on several factors, such as the energy depth of the given trap, the concentration of the assisting traps, and the magnitude of the applied electric field. Recipes are given for theoretical studies of the effect by analytical equations and by kinetic Monte Carlo simulations.}
}

@article{nenashev2019percolation,
  title = {Percolation Description of Charge Transport in Amorphous Oxide Semiconductors},
  author = {Nenashev, A. V. and Oelerich, J. O. and Greiner, S. H. M. and Dvurechenskii, A. V. and Gebhard, F. and Baranovskii, S. D.},
  year = {2019},
  month = sep,
  journal = {Physical Review B},
  volume = {100},
  number = {12},
  pages = {125202},
  publisher = {{American Physical Society}},
  doi = {10.1103/PhysRevB.100.125202},
  abstract = {The charge transport mechanism in amorphous oxide semiconductors (AOS) is a matter of controversial debates. Most theoretical studies so far neglected the percolation nature of the phenomenon. In this paper, a recipe for theoretical description of charge transport in AOSs is formulated using the percolation arguments. Comparison with the previous theoretical studies shows a superiority of the percolation approach. The results of the percolation theory are compared to experimental data obtained in various InGaZnO materials revealing parameters of the disorder potential in such AOS.}
}

@article{neumayer2020piezoresponse,
  title = {Piezoresponse Amplitude and Phase Quantified for Electromechanical Characterization},
  author = {Neumayer, Sabine M. and Saremi, Sahar and Martin, Lane W. and Collins, Liam and Tselev, Alexander and Jesse, Stephen and Kalinin, Sergei V. and Balke, Nina},
  year = {2020},
  month = nov,
  journal = {Journal of Applied Physics},
  volume = {128},
  number = {17},
  pages = {171105},
  publisher = {{AIP Publishing LLCAIP Publishing}},
  issn = {0021-8979},
  doi = {10.1063/5.0011631},
  abstract = {Piezoresponse force microscopy (PFM) is a powerful characterization technique to readily image and manipulate the ferroelectric domains. PFM gives an insight into the strength of local piezoelectric coupling and polarization direction through PFM amplitude and phase, respectively. Converting measured arbitrary units into units of effective piezoelectric constant remains a challenge, and insufficient methods are often used. While most quantification efforts have been spent on quantifying the PFM amplitude signal, little attention has been given to the PFM phase, which is often arbitrarily adjusted to fit expectations. This is problematic when investigating materials with unknown or negative sign of the probed effective electrostrictive coefficient or strong frequency dispersion of electromechanical responses, because assumptions about the PFM phase cannot be reliably made. The PFM phase can, however, provide important information on the polarization orientation and the sign of the effective electrostrictive coefficient probed by PFM. Most notably, the orientation of the PFM hysteresis loop is determined by the PFM phase. Moreover, when presenting PFM data as a combined signal, the resulting response can be artificially lowered or asymmetric if the phase data have not been correctly processed. Here, we explain the PFM amplitude quantification process and demonstrate a path to identify the phase offset required to extract correct meaning from the PFM phase data. We explore different sources of phase offsets including the experimental setup, instrumental contributions, and data analysis. We discuss the physical working principles of PFM and develop a strategy to extract physical meaning from the PFM amplitude and phase.},
  copyright = {\textcopyright{} 2020 Author(s).},
  langid = {english}
}

@article{nguyen2014excitation,
  title = {Excitation {{Energy Dependent Raman Signatures}} of {{ABA-}} and {{ABC-stacked Few-layer Graphene}}},
  author = {Nguyen, The An and Lee, Jae-Ung and Yoon, Duhee and Cheong, Hyeonsik},
  year = {2014},
  month = apr,
  journal = {Scientific Reports},
  volume = {4},
  number = {1},
  pages = {4630},
  publisher = {{Nature Publishing Group}},
  issn = {2045-2322},
  doi = {10.1038/srep04630},
  abstract = {The dependence of the Raman spectrum on the excitation energy has been investigated for ABA-and ABC- stacked few-layer graphene in order to establish the fingerprint of the stacking order and the number of layers, which affect the transport and optical properties of few-layer graphene. Five different excitation sources with energies of 1.96, 2.33, 2.41, 2.54 and 2.81\hspace{0.25em}eV were used. The position and the line shape of the Raman 2D, G*, N, M and other combination modes show dependence on the excitation energy as well as the stacking order and the thickness. One can unambiguously determine the stacking order and the thickness by comparing the 2D band spectra measured with 2 different excitation energies or by carefully comparing weaker combination Raman modes such as N, M, or LOLA modes. The criteria for unambiguous determination of the stacking order and the number of layers up to 5 layers are established.},
  copyright = {2014 The Author(s)},
  langid = {english}
}

@article{nguyen20192d,
  title = {{{2D}} Semiconducting {$\alpha$}-{{In}}{\textsubscript{2}}{{Se}}{\textsubscript{3}} Single Crystals: {{Growth}} and Huge Anisotropy during Transport},
  shorttitle = {{{2D}} Semiconducting {$\alpha$}-{{In2Se3}} Single Crystals},
  author = {Nguyen, Thi Huong and Nguyen, Van Quang and Duong, Anh Tuan and Cho, Sunglae},
  year = {2019},
  month = nov,
  journal = {Journal of Alloys and Compounds},
  volume = {810},
  pages = {151968},
  issn = {0925-8388},
  doi = {10/gg3f4v},
  abstract = {Using the temperature gradient method, {$\alpha$}-In2Se3 single crystals were successfully grown. Samples prepared using this method exhibited good crystallinity and huge anisotropic properties with regard to both their electrical resistivity and Seebeck coefficient. The in-plane vs. out-of-plane electrical resistivity anisotropic-ratio was approximately 490,000 at 20 K, 43,300 at 300 K, and 3650 at 400 K. The in-plane and out-of-plane Seebeck coefficient values were 252 {$\mu$}V K-1 and 397 {$\mu$}V K-1 at 400 K, respectively. This huge anisotropy was primarily due to the anisotropic activation energy and anisotropic mobility.},
  langid = {english},
  keywords = {Carrier concentration,FE-SEM,In2Se3 α,In2Se3 α (3R),mobility,photoluminescence,Raman,Raman peaks,Resistivity/conductivity,Transport properties,XRD},
  annotation = {00000  ZSCC: 0000001}
}

@article{nguyen2019structural,
  title = {Structural Properties and Variable-Range Hopping Conductivity of {{Cu2SnS3}}},
  author = {Nguyen, Hong T. T. and Zakhvalinskii, V. S. and Pham, Thao T. and Dang, N. T. and Vu, Tuan V. and Pilyuk, E. A. and Rodriguez, G. V.},
  year = {2019},
  month = feb,
  journal = {Materials Research Express},
  volume = {6},
  number = {5},
  pages = {055915},
  publisher = {{IOP Publishing}},
  issn = {2053-1591},
  doi = {10.1088/2053-1591/ab0775},
  abstract = {In the present work, we investigated the elemental composition, structural and electrical properties of Cu2SnS3 (CTS) ternary semiconductor synthesized by the pyrolytic decomposition of the precursors in vacuum. The molar ratio of Sn/Cu in the precursor solution was varied from 0.2 to 0.6. The x-ray diffraction and Raman analyses confirmed that the synthesized samples mainly consist of tetragonal CTS phase with space group The dependence of the conductivity of CTS samples on temperature was investigated in the temperature range 10-300 K. A crossover between nearest-neighbor hopping and Mott variable-range hopping conduction mechanisms were observed at Analysis of the data yielded the values of the relative acceptor concentration with the critical concentration of the metal\textendash insulator transition (MIT) cm-3, the localization radius with the Bohr radius the dielectric permittivity far from the MIT {$\kappa$}0 = 10.7, the mean acceptor energy meV and the mean density of the localized states meV-1cm-3.},
  langid = {english}
}

@article{ni2018critical,
  title = {Critical {{Role}} of {{Interlayer}} in {{Hf}}{\textsubscript{0.5}}{{Zr}}{\textsubscript{0.5}}{{O}}{\textsubscript{2}} {{Ferroelectric FET Nonvolatile Memory Performance}}},
  author = {Ni, Kai and Sharma, Pankaj and Zhang, Jianchi and Jerry, Matthew and Smith, Jeffery A. and Tapily, Kandabara and Clark, Robert and Mahapatra, Souvik and Datta, Suman},
  year = {2018},
  month = jun,
  journal = {IEEE Transactions on Electron Devices},
  volume = {65},
  number = {6},
  pages = {2461--2469},
  issn = {1557-9646},
  doi = {10.1109/TED.2018.2829122},
  abstract = {We fabricate, characterize, and establish the critical design criteria of Hf0.5Zr0.5O2 (HZO)-based ferroelectric field effect transistor (FeFET) for nonvolatile memory application. We quantify VTH shift from electron (hole) trapping in the vicinity of ferroelectric (FE)/interlayer (IL) interface, induced by erase (program) pulse, and VTH shift from polarization switching to determine true memory window (MW). The devices exhibit extrapolated retention up to 10 years at 85 \textdegree C and endurance up to 5 \texttimes{} 106 cycles initiated by the IL breakdown. Endurance up to 1012 cycles of partial polarization switching is shown in metal-FE-metal capacitor, in the absence of IL. A comprehensive metal- FE-insulator-semiconductor FeFET model is developed to quantify the electric field distribution in the gate-stack, and an IL design guideline is established to markedly enhance MW, retention characteristics, and cycling endurance.},
  keywords = {Capacitors,Charge trapping,ferroelectric FET (FeFET),Hafnium oxide,Hf₀.₅Zr₀.₅O₂ (HZO),interlayer (IL),Iron,Logic gates,Nonvolatile memory,Pulse measurements,Switches}
}

@article{nicolai2012unification,
  title = {Unification of Trap-Limited Electron Transport in Semiconducting Polymers},
  author = {Nicolai, H. T. and Kuik, M. and Wetzelaer, G. a. H. and {de Boer}, B. and Campbell, C. and Risko, C. and Br{\'e}das, J. L. and Blom, P. W. M.},
  year = {2012},
  month = oct,
  journal = {Nature Materials},
  volume = {11},
  number = {10},
  pages = {882--887},
  publisher = {{Nature Publishing Group}},
  issn = {1476-4660},
  doi = {10.1038/nmat3384},
  abstract = {Electron transport in semiconducting polymers is usually inferior to hole transport, which is ascribed to charge trapping on isolated defect sites situated within the energy bandgap. However, a general understanding of the origin of these omnipresent charge traps, as well as their energetic position, distribution and concentration, is lacking. Here we investigate electron transport in a wide range of semiconducting polymers by current\textendash voltage measurements of single-carrier devices. We observe for this materials class that electron transport is limited by traps that exhibit a Gaussian energy distribution in the bandgap. Remarkably, the electron-trap distribution is identical for all polymers considered: the number of traps amounts to 3 \texttimes{} 1023\,traps\,per~m3 centred at an energy of \textasciitilde 3.6\,eV below the vacuum level, with a typical distribution width of \textasciitilde 0.1\,eV. This indicates that the electron traps have a common origin that, we suggest, is most likely related to hydrated oxygen complexes. A consequence of this finding is that the trap-limited electron current can be predicted for any polymer.},
  copyright = {2012 Nature Publishing Group},
  langid = {english}
}

@article{nouchi2014extraction,
  title = {Extraction of the {{Schottky}} Parameters in Metal-Semiconductor-Metal Diodes from a Single Current-Voltage Measurement},
  author = {Nouchi, Ryo},
  year = {2014},
  month = nov,
  journal = {Journal of Applied Physics},
  volume = {116},
  number = {18},
  pages = {184505},
  issn = {0021-8979},
  doi = {10.1063/1.4901467},
  abstract = {In order to develop a method to extract the parameters of the two inherent Schottky contacts from a single current-voltage (I-V) characteristic curve, the I-V characteristics of metal-semiconductor-metal (MSM) diodes with asymmetric Schottky barrier heights are theoretically investigated using the thermionic emission model. The MSM diode structure is commonly used because an additional MS interface is required for the electrical characterization of MS diodes. A finite charge-injection barrier is generally formed at the additional interface. When a local maximum was detected in the first-order derivative of the measured I-V characteristics for a MSM diode, the parameters for the Schottky contacts, the zero-bias barrier heights of both MS interfaces, the series resistance of the MSM diode, and the effective ideality factor for the MS diode with a higher barrier could be extracted using this method.},
  annotation = {00025}
}

@article{novoselov2004electric,
  title = {Electric {{Field Effect}} in {{Atomically Thin Carbon Films}}},
  author = {Novoselov, K. S. and Geim, A. K. and Morozov, S. V. and Jiang, D. and Zhang, Y. and Dubonos, S. V. and Grigorieva, I. V. and Firsov, A. A.},
  year = {2004},
  month = oct,
  journal = {Science},
  volume = {306},
  number = {5696},
  pages = {666--669},
  publisher = {{American Association for the Advancement of Science}},
  doi = {10.1126/science.1102896},
  abstract = {We describe monocrystalline graphitic films, which are a few atoms thick but are nonetheless stable under ambient conditions, metallic, and of remarkably high quality. The films are found to be a two-dimensional semimetal with a tiny overlap ...},
  copyright = {American Association for the Advancement of Science},
  langid = {english},
  keywords = {⛔ No DOI found}
}

@article{novoselov20162d,
  title = {{{2D}} Materials and van Der {{Waals}} Heterostructures},
  author = {Novoselov, K. S. and Mishchenko, A. and Carvalho, A. and Neto, A. H. Castro},
  year = {2016},
  month = jul,
  journal = {Science},
  volume = {353},
  number = {6298},
  pages = {aac9439},
  issn = {0036-8075, 1095-9203},
  doi = {10.1126/science.aac9439},
  abstract = {Structured Abstract BACKGROUNDMaterials by design is an appealing idea that is very hard to realize in practice. Combining the best of different ingredients in one ultimate material is a task for which we currently have no general solution. However, we do have some successful examples to draw upon: Composite materials and III-V heterostructures have revolutionized many aspects of our lives. Still, we need a general strategy to solve the problem of mixing and matching crystals with different properties, creating combinations with predetermined attributes and functionalities. ADVANCESTwo-dimensional (2D) materials offer a platform that allows creation of heterostructures with a variety of properties. One-atom-thick crystals now comprise a large family of these materials, collectively covering a very broad range of properties. The first material to be included was graphene, a zero-overlap semimetal. The family of 2D crystals has grown to includes metals (e.g., NbSe2), semiconductors (e.g., MoS2), and insulators [e.g., hexagonal boron nitride (hBN)]. Many of these materials are stable at ambient conditions, and we have come up with strategies for handling those that are not. Surprisingly, the properties of such 2D materials are often very different from those of their 3D counterparts. Furthermore, even the study of familiar phenomena (like superconductivity or ferromagnetism) in the 2D case, where there is no long-range order, raises many thought-provoking questions.A plethora of opportunities appear when we start to combine several 2D crystals in one vertical stack. Held together by van der Waals forces (the same forces that hold layered materials together), such heterostructures allow a far greater number of combinations than any traditional growth method. As the family of 2D crystals is expanding day by day, so too is the complexity of the heterostructures that could be created with atomic precision.When stacking different crystals together, the synergetic effects become very important. In the first-order approximation, charge redistribution might occur between the neighboring (and even more distant) crystals in the stack. Neighboring crystals can also induce structural changes in each other. Furthermore, such changes can be controlled by adjusting the relative orientation between the individual elements.Such heterostructures have already led to the observation of numerous exciting physical phenomena. Thus, spectrum reconstruction in graphene interacting with hBN allowed several groups to study the Hofstadter butterfly effect and topological currents in such a system. The possibility of positioning crystals in very close (but controlled) proximity to one another allows for the study of tunneling and drag effects. The use of semiconducting monolayers leads to the creation of optically active heterostructures.The extended range of functionalities of such heterostructures yields a range of possible applications. Now the highest-mobility graphene transistors are achieved by encapsulating graphene with hBN. Photovoltaic and light-emitting devices have been demonstrated by combining optically active semiconducting layers and graphene as transparent electrodes. OUTLOOKCurrently, most 2D heterostructures are composed by direct stacking of individual monolayer flakes of different materials. Although this method allows ultimate flexibility, it is slow and cumbersome. Thus, techniques involving transfer of large-area crystals grown by chemical vapor deposition (CVD), direct growth of heterostructures by CVD or physical epitaxy, or one-step growth in solution are being developed. Currently, we are at the same level as we were with graphene 10 years ago: plenty of interesting science and unclear prospects for mass production. Given the fast progress of graphene technology over the past few years, we can expect similar advances in the production of the heterostructures, making the science and applications more achievable. {$<$}img class="fragment-image" aria-describedby="F1-caption" src="https://science.sciencemag.org/content/sci/353/6298/aac9439/F1.medium.gif"/{$>$} Download high-res image Open in new tab Download Powerpoint Production of van der Waals heterostructures.Owing to a large number of 2D crystals available today, many functional van der Waals heterostructures can be created. What started with mechanically assembled stacks (top) has now evolved to large-scale growth by CVD or physical epitaxy (bottom). The physics of two-dimensional (2D) materials and heterostructures based on such crystals has been developing extremely fast. With these new materials, truly 2D physics has begun to appear (for instance, the absence of long-range order, 2D excitons, commensurate-incommensurate transition, etc.). Novel heterostructure devices\textemdash such as tunneling transistors, resonant tunneling diodes, and light-emitting diodes\textemdash are also starting to emerge. Composed from individual 2D crystals, such devices use the properties of those materials to create functionalities that are not accessible in other heterostructures. Here we review the properties of novel 2D crystals and examine how their properties are used in new heterostructure devices.},
  copyright = {Copyright \textcopyright{} 2016, American Association for the Advancement of Science},
  langid = {english},
  pmid = {27471306},
  annotation = {01558}
}

@book{okamoto2006se,
  title = {In-{{Se Phase Diagram ASM Alloy Phase Diagrams Center}}},
  author = {Okamoto, H. and Okamoto, H and Cenzual, K.},
  editor = {Villars, P.},
  year = {2006},
  publisher = {{ASM International, Materials Park, OH}},
  annotation = {00000},
  file = {C\:\\Users\\ffdra\\Zotero\\storage\\U8WSQFEY\\index.html}
}

@article{ortiz-conde2013revisiting,
  title = {Revisiting {{MOSFET}} Threshold Voltage Extraction Methods},
  author = {{Ortiz-Conde}, Adelmo and {Garc{\'i}a-S{\'a}nchez}, Francisco J. and Muci, Juan and Ter{\'a}n Barrios, Alberto and Liou, Juin J. and Ho, Ching-Sung},
  year = {2013},
  month = jan,
  journal = {Microelectronics Reliability},
  series = {Reliability of {{Micro-Interconnects}} in {{3D IC Packages}}},
  volume = {53},
  number = {1},
  pages = {90--104},
  issn = {0026-2714},
  doi = {10.1016/j.microrel.2012.09.015},
  abstract = {This article presents an up-to-date review of the several extraction methods commonly used to determine the value of the threshold voltage of MOSFETs. It includes the different methods that extract this quantity from the drain current versus gate voltage transfer characteristics measured under linear operation conditions for crystalline and non-crystalline MOSFETs. The various methods presented for the linear region are adapted to the saturation region and tested as a function of drain voltage whenever possible. The implementation of the extraction methods is discussed and tested by applying them to real state-of-the-art devices in order to compare their performance. The validity of the different methods with respect to the presence of parasitic series resistance is also evaluated using 2-D simulations.},
  langid = {english}
}

@article{osamura1966crystal,
  title = {Crystal {{Structures}} of {$\alpha$}-and {$\beta$}-{{Indium Selenide}}, {{In}}{\textsubscript{2}}{{Se}}{\textsubscript{3}}},
  author = {Osamura, Kozo and Murakami, Yotaro and Tomiie, Yujiro},
  year = {1966},
  month = sep,
  journal = {Journal of the Physical Society of Japan},
  volume = {21},
  number = {9},
  pages = {1848--1848},
  publisher = {{The Physical Society of Japan}},
  issn = {0031-9015},
  doi = {10.1143/JPSJ.21.1848},
  keywords = {In2Se3 α,In2Se3 β},
  annotation = {00000  ZSCC: 0000106}
}

@article{osiekowicz2021resonance,
  title = {Resonance and Antiresonance in {{Raman}} Scattering in {{GaSe}} and {{InSe}} Crystals},
  author = {Osiekowicz, M. and Staszczuk, D. and {Olkowska-Pucko}, K. and Kipczak, {\L} and Grzeszczyk, M. and Zinkiewicz, M. and Nogajewski, K. and Kudrynskyi, Z. R. and Kovalyuk, Z. D. and Patan{\'e}, A. and Babi{\'n}ski, A. and Molas, M. R.},
  year = {2021},
  month = jan,
  journal = {Scientific Reports},
  volume = {11},
  number = {1},
  pages = {924},
  publisher = {{Nature Publishing Group}},
  issn = {2045-2322},
  doi = {10.1038/s41598-020-79411-x},
  abstract = {The temperature effect on the Raman scattering efficiency is investigated in \$\$\textbackslash varepsilon\$\$-GaSe and \$\$\textbackslash gamma\$\$-InSe crystals. We found that varying the temperature over a broad range from 5 to 350~K permits to achieve both the resonant conditions and the antiresonance behaviour in Raman scattering of the studied materials. The resonant conditions of Raman scattering are observed at about 270~K under the 1.96~eV excitation for GaSe due to the energy proximity of the optical band gap. In the case of InSe, the resonant Raman spectra are apparent at about 50 and 270~K under correspondingly the 2.41~eV and 2.54~eV excitations as a result of the energy proximity of the so-called B transition. Interestingly, the observed resonances for both materials are followed by an antiresonance behaviour noticeable at higher temperatures than the detected resonances. The significant variations of phonon-modes intensities can be explained in terms of electron-phonon coupling and quantum interference of contributions from different points of the Brillouin zone.},
  copyright = {2021 The Author(s)},
  langid = {english},
  keywords = {Raman modes},
  annotation = {Bandiera\_abtest: a Cc\_license\_type: cc\_by Cg\_type: Nature Research Journals Primary\_atype: Research Subject\_term: Materials science;Physics Subject\_term\_id: materials-science;physics}
}

@article{osman2016modulation,
  title = {Modulation of Opto-Electronic Properties of {{InSe}} Thin Layers via Phase Transformation},
  author = {Osman, Makkawi and Huang, Yanmin and Feng, Wei and Liu, Guangbo and Qiu, Yunfeng and Hu, PingAn},
  year = {2016},
  journal = {RSC Advances},
  volume = {6},
  number = {74},
  pages = {70452--70459},
  publisher = {{Royal Society of Chemistry}},
  doi = {10.1039/C6RA13543A},
  langid = {english},
  keywords = {AFM,Band gap,device,In2Se3 γ,InSe β (2H),mobility,phase transition,photo-transport,photoluminescence,Raman,Raman peaks,SEM,XRD}
}

@article{osullivan2012schottky,
  title = {Schottky {{Diodes}}},
  author = {O'Sullivan, Cr{\'e}idhe M. and Murphy, J. Anthony},
  year = {2012},
  month = jun,
  journal = {Field Guide to Terahertz Sources, Detectors, and Optics},
  pages = {35--37},
  doi = {10.1117/3.952851.ch35},
  abstract = {This section discusses Schottky diodes.},
  annotation = {00001}
}

@article{osullivan2020defect,
  title = {Defect Profiling in {{FEFET Si}}:{{HfO}}{\textsubscript{2}} Layers},
  shorttitle = {Defect Profiling in {{FEFET Si}}},
  author = {O'Sullivan, B. J. and Putcha, V. and Izmailov, R. and Afanas'ev, V. and Simoen, E. and Jung, T. and Higashi, Y. and Degraeve, R. and Truijen, B. and Kaczer, B. and Ronchi, N. and McMitchell, S. and Banerjee, K. and Clima, S. and Breuil, L. and {Van den Bosch}, G. and Linten, D. and Van Houdt, J.},
  year = {2020},
  month = nov,
  journal = {Applied Physics Letters},
  volume = {117},
  number = {20},
  pages = {203504},
  publisher = {{American Institute of Physics}},
  issn = {0003-6951},
  doi = {10.1063/5.0029072},
  abstract = {Ferroelectric Si-doped HfO2 is a promising candidate for future generation memory devices. However, such devices are vulnerable to significant threshold voltage shifts resulting from charge trapping in oxide defects. We use complementary characterization and modeling techniques to reveal significant electron trapping/de-trapping behavior, together with a strong temperature dependence of the electron emission kinetics in ferroelectric layers, which results from the onset of polarization of the ferroelectric layer. This can lead to an apparent difference in the defect characteristics in ferroelectric-HfO2 compared to the paraelectric-HfO2 structures they are shown to closely resemble when this contribution is decoupled. The results demonstrate the presence of a defect band closely aligned to the silicon conduction band, which can easily be accessed during device operation.}
}

@article{osvald2015backtoback,
  title = {Back-to-Back Connected Asymmetric {{Schottky}} Diodes with Series Resistance as a Single Diode},
  author = {Osvald, Jozef},
  year = {2015},
  journal = {physica status solidi (a)},
  volume = {212},
  number = {12},
  pages = {2754--2758},
  issn = {1862-6319},
  doi = {10.1002/pssa.201532374},
  abstract = {We have studied current\textendash voltage characteristics of two back-to-back connected Schottky diodes. In many semiconductor devices, we need to prepare one Schottky contact and the second contact should be ohmic. We show that even in the case when the second contact is also of Schottky type but with different barrier height, current\textendash voltage characteristic remains very similar as that of single Schottky diode. The existence of the second Schottky diode with lower-barrier height may not be detectable by inspecting I\textendash V curves of such structure. The analysis and Schottky diode parameter extraction also may not be able to disclose existence of two Schottky contacts in the studied structure. The structure behaves as it would be one single Schottky contact. This knowledge may be used in technology where in many cases the ohmic contact may be substituted by another Schottky contact with lower-barrier height.},
  copyright = {\textcopyright{} 2015 WILEY-VCH Verlag GmbH \& Co. KGaA, Weinheim},
  langid = {english},
  keywords = {ohmic contacts,Schottky diodes,series resistance}
}

@article{padmanabhan2018linear,
  title = {Linear and Nonlinear Optical Probe of the Ferroelectric-like Phase Transition in a Polar Metal, {{LiOsO}}{\textsubscript{3}}},
  author = {Padmanabhan, Haricharan and Park, Yoonsang and Puggioni, Danilo and Yuan, Yakun and Cao, Yanwei and Gasparov, Lev and Shi, Youguo and Chakhalian, Jak and Rondinelli, James M. and Gopalan, Venkatraman},
  year = {2018},
  month = sep,
  journal = {Applied Physics Letters},
  volume = {113},
  number = {12},
  pages = {122906},
  publisher = {{American Institute of Physics}},
  issn = {0003-6951},
  doi = {10/gg3f46},
  abstract = {LiOsO3 is one of the first materials identified in the recent literature as a ``polar metal,'' a class of materials that are simultaneously noncentrosymmetric and metallic. In this work, the linear and nonlinear optical susceptibility of LiOsO3 is studied by means of ellipsometry and optical second harmonic generation (SHG). Strong optical birefringence is observed using spectroscopic ellipsometry. The nonlinear optical susceptibility extracted from SHG polarimetry reveals that the tensor components are of the same magnitude as in the isostructural insulator LiNbO3, except the component along the polar axis d33 is suppressed by an order of magnitude. Temperature-dependent SHG measurements in combination with Raman spectroscopy indicate a continuous order-disorder type polar phase transition at 140\,K. Linear and nonlinear optical microscopy measurements reveal 109\textdegree/71\textdegree{} ferroelastic domain walls, like in other trigonal ferroelectrics. No 180\textdegree{} polar domain walls are observed to emerge across the phase transition.},
  annotation = {00000  ZSCC: NoCitationData[s0]}
}

@article{pankov20082dmit,
  title = {{{2D-MIT}} as Self-Doping of a {{Wigner}}\textendash{{Mott}} Insulator},
  author = {Pankov, S. and Dobrosavljevic, V.},
  year = {2008},
  month = apr,
  journal = {Physica B: Condensed Matter},
  volume = {403},
  number = {5},
  pages = {1440--1442},
  issn = {0921-4526},
  doi = {10.1016/j.physb.2007.10.365},
  abstract = {We consider an interaction-driven scenario for the two-dimensional metal\textendash insulator transition in zero magnetic field (2D-MIT), based on melting the Wigner crystal through vacancy\textendash interstitial pair formation. We show that the transition from the Wigner\textendash Mott insulator to a heavy Fermi liquid emerges as an instability to self-doping, resembling conceptually the solid to normal liquid transition in He3. The resulting physical picture naturally explains many puzzling features of the 2D-MIT.},
  langid = {english},
  keywords = {Disorder,Hubbard model,Metal–insulator transition,Strong correlation}
}

@book{park2020ferroelectricgate,
  title = {Ferroelectric-{{Gate Field Effect Transistor Memories}}: {{Device Physics}} and {{Applications}}},
  shorttitle = {Ferroelectric-{{Gate Field Effect Transistor Memories}}},
  editor = {Park, Byung-Eun and Ishiwara, Hiroshi and Okuyama, Masanori and Sakai, Shigeki and Yoon, Sung-Min},
  year = {2020},
  series = {Topics in {{Applied Physics}}},
  edition = {Second},
  publisher = {{Springer Singapore}},
  doi = {10.1007/978-981-15-1212-4},
  abstract = {This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact. Among various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has been most actively progressed since the late 1980s and reached modest mass production for specific application since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims the ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handicaps of cross-talk for random accessibility and short retention time. This book aims to provide the readers with development history, technical issues, fabrication methodologies, and promising applications of FET-type ferroelectric memory devices, presenting a comprehensive review of past, present, and future technologies. The topics discussed will lead to further advances in large-area electronics implemented on glass, plastic or paper substrates as well as in conventional Si electronics. The book is composed of chapters written by leading researchers in ferroelectric materials and related device technologies, including oxide and organic ferroelectric thin films.},
  isbn = {9789811512117},
  langid = {english},
  annotation = {00000  ZSCC: NoCitationData[s0]}
}

@article{park2021interface,
  title = {Interface {{Trap-Induced Temperature Dependent Hysteresis}} and {{Mobility}} in {$\beta$}-{{Ga}}{\textsubscript{2}}{{O}}{\textsubscript{3}} {{Field-Effect Transistors}}},
  author = {Park, Youngseo and Ma, Jiyeon and Yoo, Geonwook and Heo, Junseok},
  year = {2021},
  month = feb,
  journal = {Nanomaterials},
  volume = {11},
  number = {2},
  pages = {494},
  publisher = {{Multidisciplinary Digital Publishing Institute}},
  doi = {10.3390/nano11020494},
  abstract = {Interface traps between a gate insulator and beta-gallium oxide ({$\beta$}-Ga2O3) channel are extensively studied because of the interface trap charge-induced instability and hysteresis. In this work, their effects on mobility degradation at low temperature and hysteresis at high temperature are investigated by characterizing electrical properties of the device in a temperature range of 20\textendash 300 K. As acceptor-like traps at the interface are frozen below 230 K, the hysteresis becomes negligible but simultaneously the channel mobility significantly degrades because the inactive neutral traps allow additional collisions of electrons at the interface. This is confirmed by the fact that a gate bias adversely affects the channel mobility. An activation energy of such traps is estimated as 170 meV. The activated trap charges' trapping and de-trapping processes in response to the gate pulse bias reveal that the time constants for the slow and fast processes decrease due to additionally activated traps as the temperature increases.},
  copyright = {http://creativecommons.org/licenses/by/3.0/},
  langid = {english},
  keywords = {<i>β</i>-Ga<sub>2</sub>O<sub>3</sub>,acceptor-like trap,hysteresis,interface trap,mobility degradation}
}

@article{patel2020advancement,
  title = {The Advancement of Compelling {{Indium Selenide}}: Synthesis, Structural Studies, Optical Properties and Photoelectrical Applications},
  shorttitle = {The Advancement of Compelling {{Indium Selenide}}},
  author = {Patel, P. B. and Dhimmar, J. M. and Modi, B. P. and Desai, H. N.},
  year = {2020},
  month = nov,
  journal = {Journal of Materials Science: Materials in Electronics},
  issn = {1573-482X},
  doi = {10.1007/s10854-020-04878-3},
  abstract = {Single crystals of Indium Selenide (InSe) were successfully grown by direct vapor transport method. The grown crystals were characterized by estimating their surface morphology, chemical composition, structural, optical and photoconductive properties using appropriate techniques. SEM image suggested that InSe crystal has layered-type surface without morphological defects. Also, the hexagonal structure of crystal has been confirmed by X-ray diffraction (XRD) spectra and selected area electron diffraction (SAED) pattern. The crystal exhibits high absorption coefficient (104 cm-1) in visible region and direct bandgap of 1.22 eV. The trap depth parameters and photoconductivity parameters were determined by the growth-decay curve and they depend upon illumination intensity, temperature and wavelength of incident light. The grown InSe crystals have excellent photoconductive properties and hence can be utilized in different photoelectrical applications.},
  langid = {english},
  keywords = {Band gap,ESAX,InSe,photo-transport,SAED,SEM,XRD},
  annotation = {ZSCC: 0000000}
}

@article{patil2019gateinduced,
  title = {Gate-{{Induced Metal}}\textendash{{Insulator Transition}} in {{2D}} van Der {{Waals Layers}} of {{Copper Indium Selenide Based Field-Effect Transistors}}},
  author = {Patil, Prasanna D. and Ghosh, Sujoy and Wasala, Milinda and Lei, Sidong and Vajtai, Robert and Ajayan, Pulickel M. and Ghosh, Arindam and Talapatra, Saikat},
  year = {2019},
  month = nov,
  journal = {ACS Nano},
  volume = {13},
  number = {11},
  pages = {13413--13420},
  publisher = {{American Chemical Society}},
  issn = {1936-0851},
  doi = {10.1021/acsnano.9b06846},
  abstract = {The existence of an exquisite phenomenon such as a metal\textendash insulator transition (MIT) in two-dimensional (2D) systems, where completely different electronic functionalities in the same system can emerge simply by regulating parameters such as charge carrier density in them, is noteworthy. Such tunability in material properties can lead to several applications where precise tuning of function specific properties are desirable. Here, we report on our observation on the occurrence of MIT in the 2D material system of copper indium selenide (CuIn7Se11). Clear evidence of the metallic nature of conductivity ({$\sigma$}) under the influence of electrostatic doping via the gate, which crosses over to an insulating phase upon lowering the temperature, was observed by investigating the temperature and gate dependence of {$\sigma$} in CuIn7Se11 field-effect transistor devices. At higher charge carrier densities (n {$>$} 1012 cm\textendash 1), we found that {$\sigma$} {$\sim$} (n){$\alpha$} with {$\alpha$} {$\sim$} 2, which suggests the presence of bare Coulomb impurity scattering within the studied range of temperature (280 K {$>$} T {$>$} 20 K). Our analysis of the conductivity data following the principles of percolation theory of transition where {$\sigma$} {$\sim$} (n - nC){$\delta$} show that the critical percolation exponent {$\delta$}(T) has average values {$\sim$}1.57 {$\pm$} 0.27 and 1.02 {$\pm$} 0.35 within the measured temperature range for the two devices and it is close to the 2D percolation exponent value of 1.33. We believe that the 2D MIT seen in our system is due to the charge density inhomogeneity caused by electrostatic doping and unscreened charge impurity scattering that leads to a percolation driven transition. The findings reported here for CuIn7Se11 system provide a different material platform to investigate MIT in 2D and are crucial in order to understand the fundamental basis of electronic interactions and charge-transport phenomenon in other unexplored 2D electron systems.}
}

@article{pfitzner1996redetermination,
  title = {Redetermination of the {{Crystal Structure}} of {$\gamma$}-{{In}}{\textsubscript{2}}{{Se}}{\textsubscript{3}} by {{Twin Crystal X-Ray Method}}},
  author = {Pfitzner, A. and Lutz, H. D.},
  year = {1996},
  month = jul,
  journal = {Journal of Solid State Chemistry},
  volume = {124},
  number = {2},
  pages = {305--308},
  issn = {0022-4596},
  doi = {10/dccxjv},
  abstract = {The crystal structure of {$\gamma$}-In2Se3(P61orP65,Z= 6,a= 712.86(5),c= 1938.1(2) pm) was redetermined by X-ray structure determination methods confirming the results of Likformanet al.reported in 1978 (8). The crystals (hexagonal pyramids and bipyramids, and small plates) obtained by chemical transport with iodine as transporting agent were multiple twins. The collected data of two twinned crystal specimens were refined (finalR1 = 0.0315 and 0.0559 for 1553 and 1602 independent reflections withI{$>$} 2{$\sigma$}I, respectively). The structure is built up by In(1)Se5trigonal bipyramids and distorted In(2)Se4tetrahedra resulting in a distorted wurtzite-type-like arrangement. {$\gamma$}-In2Se3is the room-temperature polymorph of indium(III) selenide contrary to some other reports in the literature, e.g., Julienet al.(1985) (3).},
  langid = {english},
  keywords = {In2Se3 γ},
  annotation = {00000  ZSCC: 0000063}
}

@article{pintilie2005metalferroelectricmetal,
  title = {Metal-Ferroelectric-Metal Heterostructures with {{Schottky}} Contacts. {{I}}. {{Influence}} of the Ferroelectric Properties},
  author = {Pintilie, L. and Alexe, M.},
  year = {2005},
  month = dec,
  journal = {Journal of Applied Physics},
  volume = {98},
  number = {12},
  pages = {124103},
  publisher = {{American Institute of Physics}},
  issn = {0021-8979},
  doi = {10.1063/1.2148622},
  abstract = {A model for metal-ferroelectric-metal heterostructures with Schottky contacts is proposed. The model adapts the general theories of metal-semiconductor rectifying contacts for the particular case of metal-ferroelectric contact by introducing the ferroelectric polarization as a sheet of surface charge located at a finite distance from the electrode interface, a deep trapping level of high concentration, and the static and dynamic values of the dielectric constant. Consequences of the proposed model on relevant quantities of the Schottky contact such as builtin voltage, charge density, and depletion width, as well as on the interpretation of the current-voltage and capacitance-voltage characteristics are discussed in detail.}
}

@article{pintilie2007ferroelectric,
  title = {Ferroelectric Polarization-Leakage Current Relation in High Quality Epitaxial {{Pb}}({{Zr}}, {{Ti}}){{O}}{\textsubscript{3}} Films},
  author = {Pintilie, L. and Vrejoiu, I. and Hesse, D. and LeRhun, G. and Alexe, M.},
  year = {2007},
  month = mar,
  journal = {Physical Review B},
  volume = {75},
  number = {10},
  pages = {104103},
  publisher = {{American Physical Society}},
  doi = {10.1103/PhysRevB.75.104103},
  abstract = {Leakage current measurements were performed on epitaxial, single-crystal quality Pb(Zr,Ti)O3 films with thicknesses in the 50\textendash 300nm range. It was found that the voltage behavior of the leakage current has a minor dependence on thickness, which rules out the space-charge limited currents as main leakage source. Temperature-dependent measurements were performed to obtain more information on the transport mechanism through the metal-ferroelectric-metal (MFM) structure. The results are analyzed in the frame of interface-controlled Schottky emission. A surprisingly low value of only 0.12\textendash 0.13eV was obtained for the potential barrier, which is much smaller than the reported value of 0.87eV [I. Stolichnov et al., Appl. Phys. Lett. 75, 1790 (1999)]. The result is explained by the effect of the ferroelectric polarization on the potential barrier height. The low value of the effective Richardson constant, of the order of 10-7\textendash 10-6A/cm2K2, suggests that the pure thermionic emission is not the adequate conduction mechanism for epitaxial MFM structures. The true mechanism might be interface-controlled injection, followed by a low mobility drift through the film volume.},
  keywords = {PZT}
}

@book{pintilie2011charge,
  title = {Charge {{Transport}} in {{Ferroelectric Thin Films}}},
  author = {Pintilie, Lucian},
  year = {2011},
  month = aug,
  journal = {Ferroelectrics - Physical Effects},
  publisher = {{IntechOpen}},
  doi = {10.5772/18165},
  abstract = {Open access peer-reviewed chapter},
  isbn = {978-953-307-453-5},
  langid = {english},
  keywords = {Schottky}
}

@misc{pmma,
  title = {{{PMMA Resist Datasheet}}},
  publisher = {{Microchem}},
  annotation = {00000},
  file = {C\:\\Users\\ffdra\\Zotero\\storage\\CFKB6KXC\\PMMA_Data_Sheet.pdf}
}

@article{poh2018molecularbeam,
  title = {Molecular-{{Beam Epitaxy}} of {{Two-Dimensional In}}{\textsubscript{2}}{{Se}}{\textsubscript{3}} and {{Its Giant Electroresistance Switching}} in {{Ferroresistive Memory Junction}}},
  author = {Poh, Sock Mui and Tan, Sherman Jun Rong and Wang, Han and Song, Peng and Abidi, Irfan H. and Zhao, Xiaoxu and Dan, Jiadong and Chen, Jingsheng and Luo, Zhengtang and Pennycook, Stephen J. and Castro Neto, Antonio H. and Loh, Kian Ping},
  year = {2018},
  month = oct,
  journal = {Nano Letters},
  volume = {18},
  number = {10},
  pages = {6340--6346},
  issn = {1530-6984},
  doi = {10.1021/acs.nanolett.8b02688},
  abstract = {Ferroelectric thin film has attracted great interest for nonvolatile memory applications and can be used in either ferroelectric Schottky diodes or ferroelectric tunneling junctions due to its promise of fast switching speed, high on-to-off ratio, and nondestructive readout. Two-dimensional {$\alpha$}-phase indium selenide (In2Se3), which has a modest band gap and robust ferroelectric properties stabilized by dipole locking, is an excellent candidate for multidirectional piezoelectric and switchable photodiode applications. However, the large-scale synthesis of this material is still elusive, and its performance as a ferroresistive memory junction is rarely reported. Here, we report the low-temperature molecular-beam epitaxy (MBE) of large-area monolayer {$\alpha$}-In2Se3 on graphene and demonstrate the use of {$\alpha$}-In2Se3 on graphene in ferroelectric Schottky diode junctions by employing high-work-function gold as the top electrode. The polarization-modulated Schottky barrier formed at the interface exhibits a giant electroresistance ratio of 3.9 \texttimes{} 106 with a readout current density of {$>$}12 A/cm2, which is more than 200\% higher than the state-of-the-art technology. Our MBE growth method allows a high-quality ultrathin film of In2Se3 to be heteroepitaxially grown on graphene, thereby simplifying the fabrication of high-performance 2D ferroelectric junctions for ferroresistive memory applications.},
  keywords = {device,ferroelectric,film,HREELS,In2Se3 α (2H),InSe γ (3R),PFM,Piezoelectric,Raman},
  annotation = {00010}
}

@article{popovic1971xray,
  title = {X-{{Ray Diffraction Measurement}} of {{Lattice Parameters}} of {{In}}{\textsubscript{2}}{{Se}}{\textsubscript{3}}},
  author = {Popovi{\'c}, S. and {\v C}elustka, B. and Bidjin, D.},
  year = {1971},
  journal = {physica status solidi (a)},
  volume = {6},
  number = {1},
  pages = {301--304},
  issn = {1521-396X},
  doi = {10.1002/pssa.2210060134},
  abstract = {Hexagonal and rhombohedral modifications of {$\alpha$}-In2Se3 are prepared and investigated by X-ray diffraction methods. Unit cell dimensions and space groups are determined. Both {$\alpha$}-modifications transform into {$\beta$}-phase at 200 \textdegree C; the reversal transformation takes place at much lower temperature. The behaviour of the structural parameters is studied during the complete cyclic heating and cooling process.},
  copyright = {Copyright \textcopyright{} 1971 WILEY-VCH Verlag GmbH \& Co. KGaA},
  langid = {english},
  keywords = {phase transition,phase transition α-β,phase transition β-γ},
  annotation = {00061}
}

@article{popovic1979revised,
  title = {Revised and New Crystal Data for Indium Selenides},
  author = {Popovi{\'c}, S. and Tonejc, A. and {Gr{\v z}eta-Plenkovi{\'c}}, B. and {\v C}elustka, B. and Trojko, R.},
  year = {1979},
  month = aug,
  journal = {Journal of Applied Crystallography},
  volume = {12},
  number = {4},
  pages = {416--420},
  publisher = {{International Union of Crystallography}},
  issn = {0021-8898},
  doi = {10/fwjxs7},
  abstract = {A redetermination of crystal data for InSe (hexagonal), {$\alpha$}-In2Se3 (rhombohedral), {$\alpha$}-In2Se3 (hexagonal), {$\beta$}-In2Se3 (rhombohedral), {$\gamma$}-In2Se3 (hexagonal), and {$\delta$}-In2Se3 (hexagonal) has been undertaken because of discrepancies among the published results in the literature and in the JCPDS Powder Diffraction File.},
  copyright = {Copyright (c) 1979 International Union of Crystallography},
  langid = {english},
  keywords = {In2Se3 α (2H),In2Se3 α (3R),In2Se3 α (P63/mmc),In2Se3 α (R3-m),In2Se3 β,In2Se3 β (3R),In2Se3 γ,In2Se3 δ,phase transition,phase transition α-β,phase transition β-γ,XRD},
  annotation = {00150  ZSCC: 0000149}
}

@article{powell1983charge,
  title = {Charge Trapping Instabilities in Amorphous Silicon-silicon Nitride Thin-film Transistors},
  author = {Powell, M. J.},
  year = {1983},
  month = sep,
  journal = {Applied Physics Letters},
  volume = {43},
  number = {6},
  pages = {597--599},
  publisher = {{American Institute of Physics}},
  issn = {0003-6951},
  doi = {10.1063/1.94399}
}

@article{procopio2021emergence,
  title = {Emergence of {{Topological Edge States}} in {{Oxidized}} {$\alpha$}-{{In}}{\textsubscript{2}}{{Se}}{\textsubscript{3}} {{Nanosheets}}: {{Implications}} for {{Field-Effect Transistors}}},
  shorttitle = {Emergence of {{Topological Edge States}} in {{Oxidized}} {$\alpha$}-{{In2Se3 Nanosheets}}},
  author = {Procopio, Erik F. and N Batista, Nathanael and {L de Souza}, F{\'a}bio A. and Paz, Wendel S. and Palacios, Juan Jos{\'e} and Scopel, Wanderl{\~a} L.},
  year = {2021},
  month = aug,
  journal = {ACS Applied Nano Materials},
  publisher = {{American Chemical Society}},
  doi = {10.1021/acsanm.1c01394},
  abstract = {Interest in the coexistence of intrinsic polarization and nontrivial band topology in a single material has grown rapidly in recent years. Although some progress has been made in this regard, in many cases, oxygenation has been reported to lead to degradation of one or both properties. In this scenario, employing first-principles calculations, we demonstrate that oxygen adsorption onto the surface of the noncentrosymmetric structure of two-dimensional (2D) In2Se3 results in the coexistence of innate electronic polarization and topologically protected edge states, rendering In2Se3O a stable topological insulator with conventional and topological band gaps greater than the thermal energy at room temperature. Furthermore, the feasibility of controlling the topological phase by field-effect switching is also demonstrated.}
}

@article{puggioni2018polar,
  title = {Polar Metals as Electrodes to Suppress the Critical-Thickness Limit in Ferroelectric Nanocapacitors},
  author = {Puggioni, Danilo and Giovannetti, Gianluca and Rondinelli, James M.},
  year = {2018},
  month = nov,
  journal = {Journal of Applied Physics},
  volume = {124},
  number = {17},
  pages = {174102},
  publisher = {{AIP Publishing LLC}},
  issn = {0021-8979},
  doi = {10/gg3f49},
  abstract = {Enhancing the performance of nanoscale ferroelectric (FE) field-effect transistors and FE capacitors for memory devices and logic relies on miniaturizing the metal electrode/ferroelectric area and ...},
  copyright = {\textcopyright{} 2018 Author(s).},
  langid = {english},
  annotation = {00000  ZSCC: 0000007}
}

@article{qasrawi2016optical,
  title = {Optical Interactions in the {{InSe}}/{{CdSe}} Interface},
  author = {Qasrawi, A. F. and Rabbaa, S.},
  year = {2016},
  month = apr,
  journal = {physica status solidi (b)},
  volume = {253},
  number = {4},
  pages = {755--759},
  publisher = {{John Wiley \& Sons, Ltd}},
  issn = {0370-1972},
  doi = {10.1002/pssb.201552726},
  abstract = {In this work, the structural and optical properties of the InSe/CdSe heterojunction are investigated by means of X-ray diffraction and ultraviolet-visible light spectrophotometry techniques. The hexagonal CdSe films that were deposited onto amorphous InSe and onto glass substrates at a vacuum pressure of 10?5?mbar, exhibited interesting optical characteristics. Namely, the absorption, transmission, and reflection spectra that were recorded in the incident light wavelength range of 300?1100?nm, for the InSe, CdSe, and InSe/CdSe interface revealed direct allowed transition energy bandgaps of 1.44, 1.85, and 1.52?eV, respectively. The valence-band offset for the interface is found to be 0.36?eV. On the other hand, the dielectric constant spectral analysis displayed a large increase in the real part of the dielectric constant associated with decreasing frequency below 500?THz. In addition, the optical conductivity spectra that were analyzed and modeled in accordance with the Drude theory displayed a free-carrier average scattering time of 0.4?fs and a drift mobility of 6.65?cm2?V?1?s?1 for the InSe/CdSe interface. The features of this interface nominate it as a promising member for the production of optoelectronic Schottky channels and as thin-film transistors.},
  keywords = {CdSe,dielectric properties,effective mass,FET,Heterojunction,InSe,mobility optical,photo-transport,thin film transistor,XRD}
}

@article{qiu2013direct,
  title = {Direct Hysteresis Measurements on Ferroelectret Films by Means of a Modified {{Sawyer}}\textendash{{Tower}} Circuit},
  author = {Qiu, Xunlin and Holl{\"a}nder, Lars and Wirges, Werner and Gerhard, Reimund and Cury Basso, Heitor},
  year = {2013},
  month = jun,
  journal = {Journal of Applied Physics},
  volume = {113},
  number = {22},
  pages = {224106},
  publisher = {{American Institute of Physics}},
  issn = {0021-8979},
  doi = {10.1063/1.4809556},
  abstract = {Ferro- and piezo-electrets are non-polar polymer foams or film systems with internally charged cavities. Since their invention more than two decades ago, ferroelectrets have become a welcome addition to the range of piezo-, pyro-, and ferro-electric materials available for device applications. A polarization-versus-electric-field hysteresis is an essential feature of a ferroelectric material and may also be used for determining some of its main properties. Here, a modified Sawyer-Tower circuit and a combination of unipolar and bipolar voltage waveforms are employed to record hysteresis curves on cellular-foam polypropylene ferroelectret films and on tubular-channel fluoroethylenepropylene copolymer ferroelectret film systems. Internal dielectric barrier discharges (DBDs) are required for depositing the internal charges in ferroelectrets. The true amount of charge transferred during the internal DBDs is obtained from voltage measurements on a standard capacitor connected in series with the sample, but with a much larger capacitance than the sample. Another standard capacitor with a much smaller capacitance\textemdash which is, however, still considerably larger than the sample capacitance\textemdash is also connected in series as a high-voltage divider protecting the electrometer against destructive breakdown. It is shown how the DBDs inside the polymer cavities lead to phenomenological hysteresis curves that cannot be distinguished from the hysteresis loops found on other ferroic materials. The physical mechanisms behind the hysteresis behavior are described and discussed.}
}

@book{rabe2007physics,
  title = {Physics of {{Ferroelectrics}}: {{A Modern Perspective}}},
  shorttitle = {Physics of {{Ferroelectrics}}},
  editor = {Rabe, Karin M. and Ahn, Charles H. and Triscone, Jean-Marc},
  year = {2007},
  series = {Topics in {{Applied Physics}}},
  publisher = {{Springer-Verlag}},
  address = {{Berlin Heidelberg}},
  doi = {10.1007/978-3-540-34591-6},
  abstract = {During the past two decades, revolutionary breakthroughs have occurred in the understanding of ferroelectric materials, both from the perspective of theory and experiment. First principles approaches, including the Berry phase formulation of ferroelectricity, now allow accurate, quantitative predictions of material properties, and single crystalline thin films are now available for fundamental studies of these materials. In addition, the need for high dielectric constant insulators and nonvolatile memories in semiconductor applications has motivated a renaissance in the investigation of these materials. This book addresses the paradigmatic shifts in understanding brought about by these breakthroughs, including the consideration of novel fabrication methods of single crystalline ferroelectric thin films and nanoscale applications of these materials, and new theoretical methods such as the effective Hamiltonian approach and density functional theory. A book for practicing scientists as well as graduate students.},
  isbn = {978-3-540-34590-9},
  langid = {english},
  annotation = {00000  ZSCC: 0000021}
}

@article{radonjic2012wignermott,
  title = {Wigner-{{Mott}} Scaling of Transport near the Two-Dimensional Metal-Insulator Transition},
  author = {Radonji{\'c}, M. M. and Tanaskovi{\'c}, D. and Dobrosavljevi{\'c}, V. and Haule, K. and Kotliar, G.},
  year = {2012},
  month = feb,
  journal = {Physical Review B},
  volume = {85},
  number = {8},
  pages = {085133},
  publisher = {{American Physical Society}},
  doi = {10.1103/PhysRevB.85.085133},
  abstract = {Electron-electron scattering usually dominates the transport in strongly correlated materials. It typically leads to pronounced resistivity maxima in the incoherent regime around the coherence temperature T{${_\ast}$}, reflecting the tendency of carriers to undergo Mott localization following the demise of the Fermi liquid. This behavior is best pronounced in the vicinity of interaction-driven (Mott-like) metal-insulator transitions, where the T{${_\ast}$} decreases, while the resistivity maximum {$\rho$}max increases. Here we show that in this regime, the entire family of resistivity curves displays a characteristic scaling behavior {$\rho$}(T)/{$\rho$}max{$\approx$}F(T/Tmax), while the {$\rho$}max and Tmax{$\sim$}T{${_\ast}$} assume a power-law dependence on the quasiparticle effective mass m{${_\ast}$}. Remarkably, precisely such trends are found from an appropriate scaling analysis of experimental data obtained from diluted two-dimensional electron gases in zero magnetic fields. Our analysis provides strong evidence that inelastic electron-electron scattering\textemdash and not disorder effects\textemdash dominates finite-temperature transport in these systems, validating the Wigner-Mott picture of the two-dimensional metal-insulator transition.}
}

@article{rasmussen2013pressureinduced,
  title = {Pressure-Induced Phase Transformation of {{In}}{\textsubscript{2}}{{Se}}{\textsubscript{3}}},
  author = {Rasmussen, Anya M. and Teklemichael, Samuel T. and Mafi, Elham and Gu, Yi and McCluskey, Matthew D.},
  year = {2013},
  month = feb,
  journal = {Applied Physics Letters},
  volume = {102},
  number = {6},
  pages = {062105},
  publisher = {{American Institute of Physics}},
  issn = {0003-6951},
  doi = {10.1063/1.4792313},
  abstract = {In2Se3 has potential as a phase-change material for memory applications. Understanding its phase diagram is important to achieve controlled switching between phases. Using x-ray diffraction and a diamond-anvil cell, the pressure-dependent structural properties of In2Se3 powder were studied at room temperature. {$\alpha$}-In2Se3 transforms into the {$\beta$} phase at 0.7 GPa, an order of magnitude lower than phase-transition critical pressures in typical semiconductors. The {$\beta$} phase persists upon decompression to ambient pressure. Raman spectroscopy experiments confirm this result. The bulk moduli are reported and the c/a ratio for the {$\beta$} phase is shown to have a highly nonlinear dependence on pressure.},
  keywords = {In2Se3 α,In2Se3 β (3R),phase transition,phase transition pressure}
}

@article{rodriguez2019electric,
  title = {Electric Field Induced Metallic Behavior in Thin Crystals of Ferroelectric \{\textbackslash alpha\}-{{In2Se3}}},
  author = {Rodriguez, Justin R. and Murray, William and Fujisawa, Kazunori and Lee, Seng Huat and Kotrick, Alexandra L. and Chen, Yixuan and Mckee, Nathan and Lee, Sora and Terrones, Mauricio and {Trolier-McKinstry}, Susan and Jackson, Thomas N. and Mao, Zhiqiang and Liu, Zhiwen and Liu, Ying},
  year = {2019},
  month = dec,
  journal = {arXiv:1912.06722 [cond-mat]},
  eprint = {1912.06722},
  eprinttype = {arxiv},
  primaryclass = {cond-mat},
  abstract = {A ferroelectric field effect transistor (FeFET) that may potentially integrate the data storage and logic functions in the same circuitry can also be used as a platform to study the properties of the ferroelectric material itself. Thin crystals of \{\textbackslash alpha\}-In2Se3, a ferroelectric transition metal chalcogenide semiconductor featuring van de Waals interlayer coupling and an energy gap of around 1.4 eV, was used in this work as the channel material as opposed to the gate dielectric of the FeFET. These FeFETs, which feature a back gate of heavily doped Si and a gate dielectric of 300 nm thick thermally grown SiO2, were measured down to liquid helium temperatures. They were found to show good electric field effect functions and electric field effect induced metallic behavior, along with possible signs for the existence of polarization domains.},
  archiveprefix = {arXiv},
  keywords = {⛔ No DOI found,Condensed Matter - Materials Science},
  annotation = {00000}
}

@article{rodriguez2020electric,
  title = {Electric Field Induced Metallic Behavior in Thin Crystals of Ferroelectric {$\alpha$}-{{In}}{\textsubscript{2}}{{Se}}{\textsubscript{3}}},
  author = {Rodriguez, Justin R. and Murray, William and Fujisawa, Kazunori and Lee, Seng Huat and Kotrick, Alexandra L. and Chen, Yixuan and Mckee, Nathan and Lee, Sora and Terrones, Mauricio and {Trolier-McKinstry}, Susan and Jackson, Thomas N. and Mao, Zhiqiang and Liu, Zhiwen and Liu, Ying},
  year = {2020},
  month = aug,
  journal = {Applied Physics Letters},
  volume = {117},
  number = {5},
  pages = {052901},
  publisher = {{American Institute of Physics}},
  issn = {0003-6951},
  doi = {10.1063/5.0014945},
  abstract = {Ferroelectric semiconductor field effect transistors (FeSmFETs), which employ ferroelectric semiconducting thin crystals of {$\alpha$}-In2Se3 as the channel material as opposed to the gate dielectric in conventional ferroelectric FETs (FeFETs), were prepared and measured from room to liquid-helium temperatures. These FeSmFETs were found to yield evidence for the reorientation of electrical polarization and an electric field-induced metallic state in {$\alpha$}-In2Se3. Our findings suggest that FeSmFETs can serve as a platform for the fundamental study of ferroelectric metals as well as the exploration of potential applications of semiconducting ferroelectrics.},
  keywords = {device,FeSmFET,In2Se3 α (3R),photoluminescence,Raman,second harmonic generation},
  annotation = {00000}
}

@book{roy2019mott,
  title = {Mott {{Insulators}}},
  author = {Roy, Sindhunil},
  year = {2019},
  month = jul,
  publisher = {{IOP Publishing}},
  doi = {10.1088/2053-2563/ab16c9},
  isbn = {978-0-7503-1596-8}
}

@article{saha2020ain2se3,
  title = {{$\alpha$}-{{In}}{\textsubscript{2}}{{Se}}{\textsubscript{3}} Based Ferroelectric-Semiconductor Metal Junction for Non-Volatile Memories},
  author = {Saha, Atanu K. and Si, Mengwei and Ye, Peide D. and Gupta, Sumeet K.},
  year = {2020},
  month = nov,
  journal = {Applied Physics Letters},
  volume = {117},
  number = {18},
  pages = {183504},
  publisher = {{American Institute of Physics}},
  issn = {0003-6951},
  doi = {10.1063/5.0021395},
  abstract = {In this work, we theoretically and experimentally investigate the working principle and nonvolatile memory (NVM) functionality of a 2D {$\alpha$}-In2Se3-based ferroelectric-semiconductor-metal-junction (FeSMJ). First, we analyze the semiconducting and ferroelectric properties of the {$\alpha$}-In2Se3 van der Waals (vdW) stack via experimental characterization and first-principles simulations. Then, we develop a FeSMJ device simulation framework by self-consistently solving the Landau\textendash Ginzburg\textendash Devonshire equation, Poisson's equation, and charge-transport equations. Based on the extracted Fe-semiconductor (FeS) parameters, our simulation results show good agreement with the experimental characteristics of our fabricated {$\alpha$}-In2Se3-based FeSMJ. Our analysis suggests that the FeS polarization-dependent modulation of Schottky barrier heights of FeSMJ plays a key role in providing the NVM functionality. Besides, the appearance of mobile carriers in FeS due to its semiconducting properties leads to a non-uniform electric field. This further induces partial polarization switching in the FeS layers, resulting in asymmetry in the FeSMJ characteristics for positive and negative voltages. Moreover, we show that the thickness scaling of FeS leads to a reduction in read/write voltage and an increase in distinguishability. Array-level analysis of FeSMJ NVM suggests a lower read-time and read-write energy with respect to the HfO2-based ferroelectric insulator tunnel junction.},
  keywords = {device,ferroelectric,In2Se3 α (3R),photoluminescence,rectifying junction,SEM},
  annotation = {00000}
}

@article{samulionis2009linear,
  title = {Linear and {{Nonlinear Elastic Properties}} of {{CuInP2S6 Layered Crystals Under Polarization Reversal}}},
  author = {Samulionis, V. and Banys, J. and Vysochanskii, Yu.},
  year = {2009},
  month = oct,
  journal = {Ferroelectrics},
  volume = {389},
  number = {1},
  pages = {18--24},
  publisher = {{Taylor \& Francis}},
  issn = {0015-0193},
  doi = {10.1080/00150190902987459},
  abstract = {In current contribution we present results of elastic and piezoelectric investigations of CuInP2S6 crystals with applied DC electric field along polar c-axis. The behaviour of piezoelectric effect have been controlled by measuring of the signal appearing on CuInP2S6 plate, which works as receiving ultrasonic transducer. It was shown that piezoelectric sensitivity in the polar phase increases with DC field, then saturates, and after reversion of voltage the piezoelectric signal decreases, at field near coercive changes sign, and saturates again at high voltage of opposite polarity. Consequently, the hysterezis loops of piezoelectric signal amplitude were observed. In the vicinity of coercive field peaks of longitudinal ultrasonic attenuation, elastic nonlinearity and ultrasonic velocity minima were observed. The layered CuInP2S6 crystals exhibit extremely large elastic nonlinearity.},
  keywords = {Ferroelectrics,layered crystals,phase transitions,polarization reversal,ultrasonic and piezoelectric properties},
  annotation = {\_eprint: https://doi.org/10.1080/00150190902987459}
}

@article{sanchez-royo2014electronic,
  title = {Electronic Structure, Optical Properties, and Lattice Dynamics in Atomically Thin Indium Selenide Flakes},
  author = {{S{\'a}nchez-Royo}, Juan F. and {Mu{\~n}oz-Matutano}, Guillermo and {Brotons-Gisbert}, Mauro and {Mart{\'i}nez-Pastor}, Juan P. and Segura, Alfredo and Cantarero, Andr{\'e}s and Mata, Rafael and {Canet-Ferrer}, Josep and Tobias, Gerard and Canadell, Enric and {Marqu{\'e}s-Hueso}, Jose and Gerardot, Brian D.},
  year = {2014},
  month = oct,
  journal = {Nano Research},
  volume = {7},
  number = {10},
  pages = {1556--1568},
  publisher = {{Tsinghua University Press}},
  issn = {1998-0000},
  doi = {10.1007/s12274-014-0516-x},
  abstract = {The progressive stacking of chalcogenide single layers gives rise to two-dimensional semiconducting materials with tunable properties that can be exploited for new field-effect transistors and photonic devices. Yet the properties of some members of the chalcogenide family remain unexplored. Indium selenide (InSe) is attractive for applications due to its direct bandgap in the near infrared, controllable p- and n-type doping and high chemical stability. Here, we reveal the lattice dynamics, optical and electronic properties of atomically thin InSe flakes prepared by micromechanical cleavage. Raman active modes stiffen or soften in the flakes depending on which electronic bonds are excited. A progressive blue-shift of the photoluminescence peaks is observed for decreasing flake thickness (as large as 0.2 eV for three single layers). First-principles calculations predict an even larger increase in the bandgap, 0.40 eV, for three single layers, and as much as 1.1 eV for a single layer. These results are promising from the point of view of the versatility of this material for optoelectronic applications at the nanometer scale and compatible with Si and III-V technologies.},
  copyright = {2014 Tsinghua University Press and Springer-Verlag Berlin Heidelberg},
  langid = {english}
}

@article{sang2019two,
  title = {Two {{Dimensional}} {$\beta$}-{{InSe}} with {{Layer-Dependent Properties}}: {{Band Alignment}}, {{Work Function}} and {{Optical Properties}}},
  shorttitle = {Two {{Dimensional}} {$\beta$}-{{InSe}} with {{Layer-Dependent Properties}}},
  author = {Sang, David K. and Wang, Huide and Qiu, Meng and Cao, Rui and Guo, Zhinan and Zhao, Jinlai and Li, Yu and Xiao, Quanlan and Fan, Dianyuan and Zhang, Han},
  year = {2019},
  month = jan,
  journal = {Nanomaterials},
  volume = {9},
  number = {1},
  pages = {82},
  publisher = {{Multidisciplinary Digital Publishing Institute}},
  doi = {10.3390/nano9010082},
  abstract = {Density functional theory calculations of the layer (L)-dependent electronic band structure, work function and optical properties of \&beta;-InSe have been reported. Owing to the quantum size effects (QSEs) in \&beta;-InSe, the band structures exhibit direct-to-indirect transitions from bulk \&beta;-InSe to few-layer \&beta;-InSe. The work functions decrease monotonically from 5.22 eV (1 L) to 5.0 eV (6 L) and then remain constant at 4.99 eV for 7 L and 8 L and drop down to 4.77 eV (bulk \&beta;-InSe). For optical properties, the imaginary part of the dielectric function has a strong dependence on the thickness variation. Layer control in two-dimensional layered materials provides an effective strategy to modulate the layer-dependent properties which have potential applications in the next-generation high performance electronic and optoelectronic devices.},
  copyright = {http://creativecommons.org/licenses/by/3.0/},
  langid = {english},
  keywords = {DFT,InSe β (2H)}
}

@article{schafer2015fate,
  title = {Fate of the False {{Mott-Hubbard}} Transition in Two Dimensions},
  author = {Sch{\"a}fer, T. and Geles, F. and Rost, D. and Rohringer, G. and Arrigoni, E. and Held, K. and Bl{\"u}mer, N. and Aichhorn, M. and Toschi, A.},
  year = {2015},
  month = mar,
  journal = {Physical Review B},
  volume = {91},
  number = {12},
  pages = {125109},
  publisher = {{American Physical Society}},
  doi = {10.1103/PhysRevB.91.125109},
  abstract = {We have studied the impact of nonlocal electronic correlations at all length scales on the Mott-Hubbard metal-insulator transition in the unfrustrated two-dimensional Hubbard model. Combining dynamical vertex approximation, lattice quantum Monte Carlo, and variational cluster approximation, we demonstrate that scattering at long-range fluctuations, i.e., Slater-like paramagnons, opens a spectral gap at weak-to-intermediate coupling, irrespective of the preformation of localized or short-range magnetic moments. This is the reason why the two-dimensional Hubbard model has a paramagnetic phase which is insulating at low enough temperatures for any (finite) interaction and no Mott-Hubbard transition is observed.}
}

@book{schroder2018ferroic,
  title = {Ferroic {{Functional Materials}}: {{Experiment}}, {{Modeling}} and {{Simulation}}},
  shorttitle = {Ferroic {{Functional Materials}}},
  editor = {Schr{\"o}der, J{\"o}rg and Lupascu, Doru C.},
  year = {2018},
  series = {{{CISM International Centre}} for {{Mechanical Sciences}}},
  publisher = {{Springer International Publishing}},
  doi = {10.1007/978-3-319-68883-1},
  abstract = {The book covers experiments and theory in the fields of ferroelectrics, ferromagnets, ferroelastics, and multiferroics. Topics include experimental preparation and characterization of magnetoelectric multiferroics, the modeling of ferroelectric and ferromagnetic materials, the formation of ferroic microstructures and their continuum-mechanical modeling, computational homogenization, and the algorithmic treatment in the framework of numerical solution strategies.},
  isbn = {978-3-319-68881-7},
  langid = {english},
  file = {C\:\\Users\\ffdra\\Zotero\\storage\\6LN89B9W\\Schröder and C. Lupascu - 2018 - Ferroic Functional Materials.pdf}
}

@article{scott1989ferroelectric,
  title = {Ferroelectric {{Memories}}},
  author = {Scott, James F. and de Araujo, Carlos A. Paz},
  year = {1989},
  month = dec,
  journal = {Science},
  volume = {246},
  number = {4936},
  pages = {1400--1405},
  publisher = {{American Association for the Advancement of Science}},
  issn = {0036-8075, 1095-9203},
  doi = {10.1126/science.246.4936.1400},
  abstract = {In the past year it has become possible to fabricate ferroelectric thin-film memories onto standard silicon integrated circuits that combine very high speed (30-nanosecond read/erase/rewrite operation), 5-volt standard silicon logic levels, very high density (2 by 2 micrometer cell size), complete nonvolatility (no standby power required), and extreme radiation hardness. These ferroelectric random-access memories are expected to replace magnetic core memory, magnetic bubble memory systems, and electrically erasable read-only memory for many applications. The switching kinetics of these films, 100 to 300 nanometers thick, are now well understood, with switching times that fit an activation field dependence that scales applied field and temperature. Earlier problems of fatigue and retention failure are also now understood and have been improved to acceptable levels.},
  chapter = {Articles},
  copyright = {\textcopyright{} 1989 by the American Association for the Advancement of Science},
  langid = {english},
  pmid = {17755995},
  annotation = {03298  ZSCC: 0003294}
}

@article{scott2007applications,
  title = {Applications of {{Modern Ferroelectrics}}},
  author = {Scott, J. F.},
  year = {2007},
  month = feb,
  journal = {Science},
  volume = {315},
  number = {5814},
  pages = {954--959},
  publisher = {{American Association for the Advancement of Science}},
  issn = {0036-8075, 1095-9203},
  doi = {10.1126/science.1129564},
  abstract = {Long viewed as a topic in classical physics, ferroelectricity can be described by a quantum mechanical ab initio theory. Thin-film nanoscale device structures integrated onto Si chips have made inroads into the semiconductor industry. Recent prototype applications include ultrafast switching, cheap room-temperature magnetic-field detectors, piezoelectric nanotubes for microfluidic systems, electrocaloric coolers for computers, phased-array radar, and three-dimensional trenched capacitors for dynamic random access memories. Terabit-per-square-inch ferroelectric arrays of lead zirconate titanate have been reported on Pt nanowire interconnects and nanorings with 5-nanometer diameters. Finally, electron emission from ferroelectrics yields cheap, high-power microwave devices and miniature x-ray and neutron sources.},
  chapter = {Review},
  copyright = {American Association for the Advancement of Science},
  langid = {english},
  pmid = {17303745},
  annotation = {02469  ZSCC: 0002469}
}

@article{setter2006ferroelectric,
  title = {Ferroelectric Thin Films: {{Review}} of Materials, Properties, and Applications},
  shorttitle = {Ferroelectric Thin Films},
  author = {Setter, N. and Damjanovic, D. and Eng, L. and Fox, G. and Gevorgian, S. and Hong, S. and Kingon, A. and Kohlstedt, H. and Park, N. Y. and Stephenson, G. B. and Stolitchnov, I. and Taganstev, A. K. and Taylor, D. V. and Yamada, T. and Streiffer, S.},
  year = {2006},
  month = sep,
  journal = {Journal of Applied Physics},
  volume = {100},
  number = {5},
  pages = {051606},
  publisher = {{American Institute of Physics}},
  issn = {0021-8979},
  doi = {10.1063/1.2336999},
  abstract = {An overview of the state of art in ferroelectric thin films is presented. First, we review applications: microsystems' applications, applications in high frequency electronics, and memories based on ferroelectric materials. The second section deals with materials, structure (domains, in particular), and size effects. Properties of thin films that are important for applications are then addressed: polarization reversal and properties related to the reliability of ferroelectric memories, piezoelectric nonlinearity of ferroelectric films which is relevant to microsystems' applications, and permittivity and loss in ferroelectric films\textemdash important in all applications and essential in high frequency devices. In the context of properties we also discuss nanoscale probing of ferroelectrics. Finally, we comment on two important emerging topics: multiferroic materials and ferroelectric one-dimensional nanostructures.}
}

@article{sharma2019electrical,
  title = {Electrical Contact Uniformity and Surface Oxidation of Ternary Chalcogenide Alloys},
  author = {Sharma, P. A. and Brumbach, M. and Adams, D. P. and Ihlefeld, J. F. and {Lima-Sharma}, A. L. and Chou, S. and Sugar, J. D. and Lu, P. and Michael, J. R. and Ingersoll, D.},
  year = {2019},
  month = jan,
  journal = {AIP Advances},
  volume = {9},
  number = {1},
  pages = {015125},
  publisher = {{American Institute of Physics}},
  doi = {10/gg3f42},
  abstract = {Uniform metal contacts are critical for advanced thermoelectric devices. The uniformity of the contact resistance for gold, tungsten, and SrRuO3 electrodes on polycrystalline ternary Bi2Te3-based alloys for different types of surface cleaning procedures was characterized. The presence of a nanometer-thick native oxide layer on the Bi2Te3 surface leads to large and non-uniform contact resistance. Surface treatments included solvent cleans and chemical and dry etching prior to metallization of the Bi2Te3. Only etching the surface led to a significant improvement in contact resistance uniformity. None of the tested contacts reacted with the underlying Bi2Te3 substrate. Etching resulted in the removal of the native oxide on the Bi2Te3 surface, which was characterized using X-ray photoelectron spectroscopy (XPS). The average thickness, chemistry, and dry etch rate of the native oxide was further characterized using XPS. The non-uniformity in contact resistance suggests that the native oxide grows non-uniformly on polycrystalline bismuth telluride surfaces.},
  annotation = {00000  ZSCC: 0000006}
}

@article{sharma2019roomtemperature,
  title = {A Room-Temperature Ferroelectric Semimetal},
  author = {Sharma, Pankaj and Xiang, Fei-Xiang and Shao, Ding-Fu and Zhang, Dawei and Tsymbal, Evgeny Y. and Hamilton, Alex R. and Seidel, Jan},
  year = {2019},
  month = jul,
  journal = {Science Advances},
  volume = {5},
  number = {7},
  pages = {eaax5080},
  issn = {2375-2548},
  doi = {10.1126/sciadv.aax5080},
  abstract = {Coexistence of reversible polar distortions and metallicity leading to a ferroelectric metal, first suggested by Anderson and Blount in 1965, has so far remained elusive. Electrically switchable intrinsic electric polarization, together with the direct observation of ferroelectric domains, has not yet been realized in a bulk crystalline metal, although incomplete screening by mobile conduction charges should, in principle, be possible. Here, we provide evidence that native metallicity and ferroelectricity coexist in bulk crystalline van der Waals WTe2 by means of electrical transport, nanoscale piezoresponse measurements, and first-principles calculations. We show that, despite being a Weyl semimetal, WTe2 has switchable spontaneous polarization and a natural ferroelectric domain structure at room temperature. This new class of materials has tantalizing potential for functional nanoelectronics applications. WTe2, a layered crystalline material, displays both ferroelectricity and metallicity. WTe2, a layered crystalline material, displays both ferroelectricity and metallicity.},
  copyright = {Copyright \textcopyright{} 2019 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC).. This is an open-access article distributed under the terms of the Creative Commons Attribution-NonCommercial license, which permits use, distribution, and reproduction in any medium, so long as the resultant use is not for commercial advantage and provided the original work is properly cited.},
  langid = {english},
  keywords = {ferroelectric,ferroelectric metal,WTe2},
  annotation = {00001}
}

@article{shen2019inplane,
  title = {In-{{Plane Ferroelectric Tunnel Junction}}},
  author = {Shen, Huitao and Liu, Junwei and Chang, Kai and Fu, Liang},
  year = {2019},
  month = feb,
  journal = {Physical Review Applied},
  volume = {11},
  number = {2},
  pages = {024048},
  publisher = {{American Physical Society}},
  doi = {10.1103/physrevapplied.11.024048},
  abstract = {Ferroelectric materals are an important platform for the realization of nonvolatile memories. So far, existing ferroelectric memory devices have utilized out-of-plane polarization in ferroelectric thin films. In this paper, we propose a type of random-access memory (RAM) based on ferroelectric thin films with in-plane polarization, called an ``in-plane ferroelectric tunnel junction.'' Apart from nonvolatility, lower power usage, and a faster writing operation compared with traditional dynamic RAMs, our proposal has the advantage of a faster reading operation and a nondestructive reading process, thus overcoming the write-after-read problem that exists widely in current ferroelectric RAMs. The recent discovered room-temperature ferroelectric IV-VI semiconductor thin films are a promising material platform for the realization of our proposal.},
  keywords = {device,Explains well,ferroelectric,FTJ,review article},
  annotation = {00000}
}

@article{shen2019twodimensional,
  title = {Two-{{Dimensional Ferroelectric Tunnel Junction}}: {{The Case}} of {{Monolayer In}}:{{SnSe}}/{{SnSe}}/{{Sb}}:{{SnSe Homostructure}}},
  shorttitle = {Two-{{Dimensional Ferroelectric Tunnel Junction}}},
  author = {Shen, Xin-Wei and Fang, Yue-Wen and Tian, Bo-Bo and Duan, Chun-Gang},
  year = {2019},
  month = jul,
  journal = {ACS Applied Electronic Materials},
  volume = {1},
  number = {7},
  pages = {1133--1140},
  publisher = {{American Chemical Society}},
  doi = {10/gg3f4z},
  abstract = {Ferroelectric tunnel junctions, in which ferroelectric polarization and quantum tunneling are closely coupled to induce the tunneling electroresistance (TER) effect, have attracted considerable interest due to their potential in nonvolatile and low-power consumption memory devices. The ferroelectric size effect, however, has hindered ferroelectric tunnel junctions from exhibiting a robust TER effect. Here, our study proposes doping engineering in a two-dimensional in-plane ferroelectric semiconductor as an effective strategy to design a two-dimensional ferroelectric tunnel junction composed of homostructural p-type semiconductor/ferroelectric/n-type semiconductor. Because the in-plane polarization persists in the monolayer ferroelectric barrier, the vertical thickness of two-dimensional ferroelectric tunnel junction can be as thin as a monolayer. We show that the monolayer In:SnSe/SnSe/Sb:SnSe junction provides an embodiment of this strategy. Combining density functional theory calculations with nonequilibrium Green's function formalism, we investigate the electron transport properties of In:SnSe/SnSe/Sb:SnSe and reveal a giant TER effect of 1460\%. The dynamical modulation of both barrier width and barrier height during the ferroelectric switching is responsible for this giant TER effect. These findings provide an important insight into the understanding of the quantum behaviors of electrons in materials at the two-dimensional limit and enable new possibilities for next-generation nonvolatile memory devices based on flexible two-dimensional lateral ferroelectric tunnel junctions.},
  annotation = {00000  ZSCC: 0000003}
}

@article{shen2019van,
  title = {Van Der {{Waals Stacking Induced Transition}} from {{Schottky}} to {{Ohmic Contacts}}: {{2D Metals}} on {{Multilayer InSe}}},
  shorttitle = {Van Der {{Waals Stacking Induced Transition}} from {{Schottky}} to {{Ohmic Contacts}}},
  author = {Shen, Tao and Ren, Ji-Chang and Liu, Xinyi and Li, Shuang and Liu, Wei},
  year = {2019},
  month = feb,
  journal = {Journal of the American Chemical Society},
  volume = {141},
  number = {7},
  pages = {3110--3115},
  issn = {0002-7863},
  doi = {10.1021/jacs.8b12212},
  abstract = {Incorporation of two-dimensional (2D) materials in electronic devices inevitably involves contact with metals, and the nature of this contact (Ohmic and/or Schottky) can dramatically affect the electronic properties of the assembly. Controlling these properties to reliably form low-resistance Ohmic contact remains a great challenge due to the strong Fermi level pinning (FLP) effect at the interface. Herein, we employ density functional theory calculations to show that van der Waals stacking can significantly modulate Schottky barrier heights in the contact formed between multilayer InSe and 2D metals by suppressing the FLP effect. Importantly, the increase of InSe layer number induces a transition from Schottky to Ohmic contact, which is attributed to the decrease of the conduction band minimum and rise of the valence band maximum of InSe. Based on the computed tunneling and Schottky barriers, Cd3C2 is the most compatible electrode for 2D InSe among the materials studied. This work illustrates a straightforward method for developing more effective InSe-based 2D electronic nanodevices.},
  annotation = {00005}
}

@article{shi2013ferroelectriclike,
  title = {A Ferroelectric-like Structural Transition in a Metal},
  author = {Shi, Youguo and Guo, Yanfeng and Wang, Xia and Princep, Andrew J. and Khalyavin, Dmitry and Manuel, Pascal and Michiue, Yuichi and Sato, Akira and Tsuda, Kenji and Yu, Shan and Arai, Masao and Shirako, Yuichi and Akaogi, Masaki and Wang, Nanlin and Yamaura, Kazunari and Boothroyd, Andrew T.},
  year = {2013},
  month = nov,
  journal = {Nature Materials},
  volume = {12},
  number = {11},
  pages = {1024--1027},
  issn = {1476-4660},
  doi = {10.1038/nmat3754},
  abstract = {Although metals cannot be ferroelectric in the strict sense of the term, it has long been predicted that they can undergo structural transitions that share similarities with ferroelectricity. LiOsO3 is now shown to be an experimental realization of such a ferroelectric-like metal.},
  copyright = {2013 Nature Publishing Group},
  langid = {english},
  annotation = {00204}
}

@article{shi2016symmetry,
  title = {Symmetry Breaking in Molecular Ferroelectrics},
  author = {Shi, Ping-Ping and Tang, Yuan-Yuan and Li, Peng-Fei and Liao, Wei-Qiang and Wang, Zhong-Xia and Ye, Qiong and Xiong, Ren-Gen},
  year = {2016},
  month = jul,
  journal = {Chemical Society Reviews},
  volume = {45},
  number = {14},
  pages = {3811--3827},
  issn = {1460-4744},
  doi = {10.1039/C5CS00308C},
  abstract = {Ferroelectrics are inseparable from symmetry breaking. Accompanying the paraelectric-to-ferroelectric phase transition, the paraelectric phase adopting one of the 32 crystallographic point groups is broken into subgroups belonging to one of the 10 ferroelectric point groups, i.e. C1, C2, C1h, C2v, C4, C4v, C3, C3v, C6 and C6v. The symmetry breaking is captured by the order parameter known as spontaneous polarization, whose switching under an external electric field results in a typical ferroelectric hysteresis loop. In addition, the responses of spontaneous polarization to other external excitations are related to a number of physical effects such as second-harmonic generation, piezoelectricity, pyroelectricity and dielectric properties. Based on these, this review summarizes recent developments in molecular ferroelectrics since 2011 and focuses on the relationship between symmetry breaking and ferroelectricity, offering ideas for exploring high-performance molecular ferroelectrics.},
  langid = {english},
  annotation = {00176}
}

@article{shi2018ntype,
  title = {N-{{Type Ohmic}} Contact and p-Type {{Schottky}} Contact of Monolayer {{InSe}} Transistors},
  author = {Shi, Bowen and Wang, Yangyang and Li, Jingzhen and Zhang, Xiuying and Yan, Jiahuan and Liu, Shiqi and Yang, Jie and Pan, Yuanyuan and Zhang, Han and Yang, Jinbo and Pan, Feng and Lu, Jing},
  year = {2018},
  month = oct,
  journal = {Physical Chemistry Chemical Physics},
  volume = {20},
  number = {38},
  pages = {24641--24651},
  issn = {1463-9084},
  doi = {10.1039/c8cp04615h},
  abstract = {Owing to their few lateral dangling bonds and enhanced gate electrostatics, two-dimensional semiconductors have attracted much attention for the fabrication of channels in next-generation field-effect transistors (FETs). Herein, combining first-principle band structure calculations with more precise quantum transport simulations, we systematically explore the interface properties between monolayer (ML) indium selenide (InSe) and a sequence of common electrodes in an FET. The ML InSe band structure is damaged by Sc, Au, Cr, Pt, and Pd electrodes but identifiable in contact with Ag, Cu, In, graphene and ML O-terminated Cr2C electrodes. A lateral n-type Schottky contact is generated with Sc, Au, Cr, Pt, Pd, and ML graphene electrodes owing to Fermi level pinning originating from the metal-induced gap states, which feature a pinning factor of 0.32. Luckily, a highly desirable lateral n-type Ohmic contact is generated with the Ag, Cu, and In electrodes. The calculated contact polarity is in agreement with the available experimental results using Au, Cr, ML graphene, Ag, and In as electrodes. Remarkably, a lateral p-type Schottky contact is generated with ML O-terminated Cr2C despite the very high work function of ML InSe. Therefore, this study offers a deeper understanding of ML InSe device interfaces and instructions for the design of ML InSe transistors.},
  langid = {english},
  keywords = {device,DFT,FET,InSe},
  annotation = {00007}
}

@article{shklovskii1984variablerange,
  title = {Variable-{{Range Hopping Conduction}}},
  author = {Shklovskii, Boris I. and Efros, Alex L.},
  year = {1984},
  journal = {Electronic Properties of Doped Semiconductors},
  pages = {202--227},
  publisher = {{Springer, Berlin, Heidelberg}},
  doi = {10.1007/978-3-662-02403-4_9},
  abstract = {This chapter deals with hopping conduction at temperatures which are so low that typical resistances between neighboring impurities become larger than those connecting some remote impurities whose...},
  langid = {english}
}

@article{shur1984physics,
  title = {Physics of Amorphous Silicon Based Alloy Field-effect Transistors},
  author = {Shur, M. and Hack, M.},
  year = {1984},
  month = may,
  journal = {Journal of Applied Physics},
  volume = {55},
  number = {10},
  pages = {3831--3842},
  publisher = {{American Institute of Physics}},
  issn = {0021-8979},
  doi = {10.1063/1.332893}
}

@article{si2018ferroelectric,
  title = {Ferroelectric {{Field-Effect Transistors Based}} on {{MoS}}{\textsubscript{2}} and {{CuInP}}{\textsubscript{2}}{{S}}{\textsubscript{6}} {{Two-Dimensional}} van Der {{Waals Heterostructure}}},
  author = {Si, Mengwei and Liao, Pai-Ying and Qiu, Gang and Duan, Yuqin and Ye, Peide D.},
  year = {2018},
  month = jul,
  journal = {ACS Nano},
  volume = {12},
  number = {7},
  pages = {6700--6705},
  issn = {1936-0851},
  doi = {10.1021/acsnano.8b01810},
  abstract = {We demonstrate room-temperature ferroelectric field-effect transistors (Fe-FETs) with MoS2 and CuInP2S6 two-dimensional (2D) van der Waals heterostructure. The ferroelectric CuInP2S6 is a 2D ferroelectric insulator, integrated on top of MoS2 channel providing a 2D/2D semiconductor/insulator interface without dangling bonds. The MoS2- and CuInP2S6-based 2D van der Waals heterostructure Fe-FETs exhibit a clear counterclockwise hysteresis loop in transfer characteristics, demonstrating their ferroelectric properties. This stable nonvolatile memory property can also be modulated by the back-gate bias of the MoS2 transistors because of the tuning of capacitance matching between the MoS2 channel and the ferroelectric CuInP2S6, leading to the enhancement of the on/off current ratio. Meanwhile, the CuInP2S6 thin film also shows resistive switching characteristics with more than four orders of on/off ratio between low- and high-resistance states, which is also promising for resistive random-access memory applications.},
  keywords = {CuInP2S6,device,dry transfer,EDS,FeFET,ferroelectric,MoS2,Polarization loop,Polarization temperature,Raman,sub-10nm},
  annotation = {00000}
}

@article{si2019ferroelectric,
  title = {A Ferroelectric Semiconductor Field-Effect Transistor},
  author = {Si, Mengwei and Saha, Atanu K. and Gao, Shengjie and Qiu, Gang and Qin, Jingkai and Duan, Yuqin and Jian, Jie and Niu, Chang and Wang, Haiyan and Wu, Wenzhuo and Gupta, Sumeet K. and Ye, Peide D.},
  year = {2019},
  month = dec,
  journal = {Nature Electronics},
  pages = {1--7},
  issn = {2520-1131},
  doi = {10.1038/s41928-019-0338-7},
  abstract = {A ferroelectric semiconductor field-effect transistor, which uses the two-dimensional ferroelectric semiconductor {$\alpha$}-In2Se3 as a channel material, could offer enhanced capabilities compared with conventional ferroelectric field-effect transistors in non-volatile memory applications.},
  copyright = {2019 The Author(s), under exclusive licence to Springer Nature Limited},
  langid = {english},
  keywords = {device,FeFET,ferroelectric,FeSmFET,FET,In2Se3 α (3R),PFM,photoluminescence,Raman,Raman peaks,SAED,STEM,TEM,XRD},
  annotation = {ZSCC: 0000002}
}

@inproceedings{si2019novel,
  title = {A {{Novel Scalable Energy-Efficient Synaptic Device}}: {{Crossbar Ferroelectric Semiconductor Junction}}},
  shorttitle = {A {{Novel Scalable Energy-Efficient Synaptic Device}}},
  booktitle = {2019 {{IEEE International Electron Devices Meeting}} ({{IEDM}})},
  author = {Si, M. and Luo, Y. and Chung, W. and Bae, H. and Zheng, D. and Li, J. and Qin, J. and Qiu, G. and Yu, S. and Ye, P. D.},
  year = {2019},
  month = dec,
  pages = {6.6.1-6.6.4},
  issn = {0163-1918},
  doi = {10.1109/iedm19573.2019.8993622},
  abstract = {A novel ferroelectric semiconductor junction (FSJ) based two-terminal memristor is demonstrated as a synaptic device for the first time. In this novel FSJ device, a metal-ferroelectric semiconductor (FS)-metal crossbar structure is used, instead of a metal-ferroelectric insulator-metal structure for a conventional ferroelectric tunnel junction (FTJ), so that an ultra-thin ferroelectric insulator is not required. Meanwhile, the FSJ also offers energy efficiency advantage over the conventional filament-based resistive random access memory (RRAM) device because the conductance of the FSJ scales with the junction area. Experimentally, a ferroelectric semiconductor {$\alpha$}-In2Se3 based crossbar FSJ (c-FSJ) as a synaptic device is demonstrated. Ferroelectric resistive switching is clearly observed in both planar FSJ (p-FSJ) by in-plane polarization switching and c-FSJ by out-of-plane polarization switching. Conductance potentiation and depression in the c-FSJ are measured and benchmarked at both original size and projected to 32 nm node with different synaptic devices. {$\alpha$}-In2Se3 c-FSJ shows good on-line learning accuracy ( 92 \%), low latency and energy consumption due to the short write pulse width and large RON.},
  keywords = {Band gap,ferroelectric,FET,FTJ,In2Se3 α (3R),photoluminescence,Raman,Raman peaks,TEM},
  annotation = {00000  ZSCC: 0000000}
}

@article{si2021asymmetric,
  title = {Asymmetric {{Metal}}/{$\alpha$}-{{In}}{\textsubscript{2}}{{Se}}{\textsubscript{3}}/{{Si Crossbar Ferroelectric Semiconductor Junction}}},
  author = {Si, Mengwei and Zhang, Zhuocheng and Chang, Sou-Chi and Haratipour, Nazila and Zheng, Dongqi and Li, Junkang and Avci, Uygar E. and Ye, Peide D.},
  year = {2021},
  month = mar,
  journal = {ACS Nano},
  volume = {15},
  number = {3},
  pages = {5689--5695},
  publisher = {{American Chemical Society}},
  issn = {1936-0851},
  doi = {10.1021/acsnano.1c00968},
  abstract = {A ferroelectric semiconductor junction is a promising two-terminal ferroelectric device for nonvolatile memory and neuromorphic computing applications. In this work, we propose and report the experimental demonstration of asymmetric metal/{$\alpha$}-In2Se3/Si crossbar ferroelectric semiconductor junctions (c-FSJs). The depletion in doped Si is used to enhance the modulation of the effective Schottky barrier height through the ferroelectric polarization. A high-performance {$\alpha$}-In2Se3 c-FSJ is achieved with a high on/off ratio {$>$} 104 at room temperature, on/off ratio {$>$} 103 at an elevated temperature of 140 \textdegree C, retention {$>$} 104 s, and endurance {$>$} 106 cycles. The on/off ratio of the {$\alpha$}-In2Se3 asymmetric FSJs can be further enhanced to {$>$}108 by introducing a metal/{$\alpha$}-In2Se3/insulator/metal structure.},
  keywords = {device,ferroelectric,FTJ,FTSJ,In2Se3 α (3R)}
}

@article{siangchng2020nitrogenmediated,
  title = {Nitrogen-Mediated Aligned Growth of Hexagonal {{BN}} Films for Reliable High-Performance {{InSe}} Transistors},
  author = {Siang Chng, Soon and Zhu, Minmin and Wu, Jing and Wang, Xizu and Kai Ng, Zhi and Zhang, Keke and Liu, Chongyang and Shakerzadeh, Maziar and Tsang, Siuhon and Tong Teo, Edwin Hang},
  year = {2020},
  journal = {Journal of Materials Chemistry C},
  volume = {8},
  number = {13},
  pages = {4421--4431},
  publisher = {{Royal Society of Chemistry}},
  doi = {10.1039/C9TC06733G},
  langid = {english},
  keywords = {EDS,EELS,FET,flake,HRTEM,InSe,mobility,mobility-temperature,Raman,Resistivity/conductivity,SAED,TEM,XPS}
}

@article{simmons1965richardsonschottky,
  title = {Richardson-{{Schottky Effect}} in {{Solids}}},
  author = {Simmons, J. G.},
  year = {1965},
  month = dec,
  journal = {Physical Review Letters},
  volume = {15},
  number = {25},
  pages = {967--968},
  publisher = {{American Physical Society}},
  doi = {10.1103/PhysRevLett.15.967}
}

@article{smolenski2021signatures,
  title = {Signatures of {{Wigner}} Crystal of Electrons in a Monolayer Semiconductor},
  author = {Smole{\'n}ski, Tomasz and Dolgirev, Pavel E. and Kuhlenkamp, Clemens and Popert, Alexander and Shimazaki, Yuya and Back, Patrick and Lu, Xiaobo and Kroner, Martin and Watanabe, Kenji and Taniguchi, Takashi and Esterlis, Ilya and Demler, Eugene and Imamo{\u g}lu, Ata{\c c}},
  year = {2021},
  month = jul,
  journal = {Nature},
  volume = {595},
  number = {7865},
  pages = {53--57},
  publisher = {{Nature Publishing Group}},
  issn = {1476-4687},
  doi = {10.1038/s41586-021-03590-4},
  abstract = {When the Coulomb repulsion between electrons dominates over their kinetic energy, electrons in two-dimensional systems are predicted to spontaneously break continuous-translation symmetry and form a quantum crystal1. Efforts to observe2\textendash 12 this elusive state of matter, termed a Wigner crystal, in two-dimensional extended systems have primarily focused on conductivity measurements on electrons confined to a single Landau level at high magnetic fields. Here we use optical spectroscopy to demonstrate that electrons in a monolayer semiconductor with density lower than 3~\texttimes ~1011~per centimetre squared form a Wigner crystal. The combination of a high electron effective mass and reduced dielectric screening enables us to observe electronic charge order even in the absence of a moir\'e potential or an external magnetic field. The interactions between a resonantly injected exciton and electrons arranged in a periodic lattice modify the exciton bandstructure so that an umklapp resonance arises in the optical reflection spectrum, heralding the presence of charge order13. Our findings demonstrate that charge-tunable transition metal dichalcogenide monolayers14 enable the investigation of previously uncharted territory for many-body physics where interaction energy dominates over kinetic energy.},
  copyright = {2021 The Author(s), under exclusive licence to Springer Nature Limited},
  langid = {english},
  annotation = {Bandiera\_abtest: a Cg\_type: Nature Research Journals Primary\_atype: Research Subject\_term: Electronic properties and materials;Quantum fluids and solids Subject\_term\_id: electronic-properties-and-materials;quantum-fluids-and-solids}
}

@book{smolenskii1984ferroelectrics,
  title = {Ferroelectrics and {{Related Materials}}},
  author = {Smolenski{\u \i}, G. A. and Bokov, V. A. and Isupov, V. A. and Krainik, N. N. and Pasinkov, R. E. and Sokolov, I. A.},
  year = {1984},
  publisher = {{Gordon and Breach Science Publishers}},
  googlebooks = {AFT9qukk63kC},
  isbn = {978-2-88124-107-9},
  langid = {english},
  keywords = {Science / Physics / General},
  annotation = {00565}
}

@inproceedings{soleimani2019negative,
  title = {Negative {{Capacitance Field-Effect Transistor Based}} on a {{Two-Dimensional Ferroelectric}}},
  booktitle = {2019 {{International Conference}} on {{Simulation}} of {{Semiconductor Processes}} and {{Devices}} ({{SISPAD}})},
  author = {Soleimani, M. and Asoudegi, N. and Khakbaz, P. and Pourfath, M.},
  year = {2019},
  month = sep,
  pages = {1--4},
  issn = {1946-1569},
  doi = {10.1109/sispad.2019.8870372},
  abstract = {Negative capacitance field effect transistors (NCFETs) based on ferroelectric materials have been the focus of intensive research activities because of their relatively small sub-threshold swing. This work proposes and presents a comprehensive study of a NCFET based on few-layer {$\alpha$}-In2Se3 as the ferroelectric in order to reduce the sub-threshold swing through voltage amplification effect. By employing first principles electronic structure calculations, the Landau constants of mono and few-layer {$\alpha$}-In2Se3 are extracted which were utilized for analyzing the characteristics of a NCFET with a monolayer MoS2 as the channel material. Sub-threshold swings in the range of 27-59 mV/dec were achieved for few-layer {$\alpha$}-In2Se3 that can be further improved by increasing the thickness of the ferroelectric layer and by using a thinner or high-{$\kappa$} insulate layer.},
  keywords = {computation,ferroelectric,FET,MoS2,NCFET},
  annotation = {00000}
}

@article{song2016improvement,
  title = {Improvement of Thermoelectric Performance of {$\alpha$}-{{In}}{\textsubscript{2}}{{Se}}{\textsubscript{3}} upon {{S}} Incorporation},
  author = {Song, Zhiliang and Liu, Haiyun and Du, Zhengliang and Liu, Xianglian and Cui, Jiaolin},
  year = {2016},
  journal = {physica status solidi (a)},
  volume = {213},
  number = {4},
  pages = {986--993},
  issn = {1862-6319},
  doi = {10.1002/pssa.201532743},
  abstract = {In this work, we have observed the enhancement of carrier concentration in {$\alpha$}-In2Se3 at a specific S content. This enhancement results from avoiding the annihilation of defects, such as VIn and interstitial Ini acting as donors, via the rearrangement of both the cationic and anionic disorders. Therefore, there is a remarkable improvement in electrical conductivity ({$\sigma$}). For example, the sample {$\alpha$}-In2S0.05Se2.95 perpendicular to the pressing direction (C+) gives the highest {$\sigma$} value of 5.56 \texttimes{} 103 {$\Omega-$}1 m-1 at 923 K, while the virgin {$\alpha$}-In2Se3 gives only 9.17 \texttimes{} 102 {$\Omega-$}1 m-1. In addition, there are dual effects on the lattice thermal conductivity ({$\kappa$}L) resulting from the stabilization of the lattice structure caused by the rearrangement of defect disorder and the lattice distortion from the formation of defect SSe. Therefore, the lattice contribution ({$\kappa$}L) in S-incorporated {$\alpha$}-In2Se3 remains relatively high at high temperatures. As a consequence, we have improved the thermoelectric performance, achieving a ZT value of 0.67 for {$\alpha$}-In2S0.05Se2.95 at 923 K, which is about 2.8 times that of virgin {$\alpha$}-In2Se3 (ZT = 0.24 at C+).},
  copyright = {\textcopyright{} 2015 WILEY-VCH Verlag GmbH \& Co. KGaA, Weinheim},
  langid = {english},
  keywords = {Carrier concentration,conductivity,device,In2Se3 α,mobility,Raman,Raman peaks,thermoelectric,XPS,XRD},
  annotation = {ZSCC: 0000004  \_eprint: https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.201532743}
}

@article{sorella1992semimetalinsulator,
  title = {Semi-{{Metal-Insulator Transition}} of the {{Hubbard Model}} in the {{Honeycomb Lattice}}},
  author = {Sorella, S. and Tosatti, E.},
  year = {1992},
  month = aug,
  journal = {Europhysics Letters (EPL)},
  volume = {19},
  number = {8},
  pages = {699--704},
  publisher = {{IOP Publishing}},
  issn = {0295-5075},
  doi = {10.1209/0295-5075/19/8/007},
  abstract = {Using quantum Monte Carlo and finite-size scaling for the Hubbard model, we find evidence of a zero-temperature transition between the nonmagnetic semi-metal and an antiferromagnetic insulator in the 2D honeycomb lattice for a nontrivial value of U/t = 4.5 {$\pm$} 0.5. The corresponding transition in Hartree-Fock mean field is at U/t = 2.23, which indicates the importance of quantum fluctuations. This represents the first example of Mott-Hubbard transition in a 2D bipartite lattice. Similar transitions are predicted for special lattices in higher dimensions, in particular for the 3D diamond lattice.},
  langid = {english}
}

@article{spirkoska2008size,
  title = {Size and Environment Dependence of Surface Phonon Modes of Gallium Arsenide Nanowires as Measured by {{Raman}} Spectroscopy},
  author = {Spirkoska, D. and Abstreiter, G. and i Morral, A. Fontcuberta},
  year = {2008},
  month = sep,
  journal = {Nanotechnology},
  volume = {19},
  number = {43},
  pages = {435704},
  publisher = {{IOP Publishing}},
  issn = {0957-4484},
  doi = {10.1088/0957-4484/19/43/435704},
  abstract = {Gallium arsenide nanowires were synthesized by gallium-assisted molecular beam epitaxy. By varying the growth time, nanowires with diameters ranging from 30 to 160 nm were obtained. Raman spectra of the nanowire ensembles were measured. The small linewidth of the optical phonon modes agree with an excellent crystalline quality. A surface phonon mode was also revealed, as a shoulder at lower frequencies of the longitudinal optical mode. In agreement with the theory, the surface mode shifts to lower wavenumbers when the diameter of the nanowires is decreased or the environment dielectric constant increased.},
  langid = {english}
}

@article{srour2018comparative,
  title = {Comparative Study of Structural and Electronic Properties of {{GaSe}} and {{InSe}} Polytypes},
  author = {Srour, Juliana and Badawi, Michael and El Haj Hassan, Fouad and Postnikov, Andrei},
  year = {2018},
  month = aug,
  journal = {The Journal of Chemical Physics},
  volume = {149},
  number = {5},
  pages = {054106},
  issn = {0021-9606},
  doi = {10.1063/1.5030539},
  abstract = {Equilibrium crystal structures, electron band dispersions, and bandgap values of layered GaSe and InSe semiconductors, each being represented by four polytypes, are studied via first-principles calculations within the density functional theory. A number of practical algorithms to take into account dispersion interactions are tested, from empirical Grimme corrections to many-body dispersion schemes. Due to the utmost technical accuracy achieved in the calculations, nearly degenerate energy-volume curves of different polytypes are resolved, and the conclusions concerning the relative stability of competing polytypes drawn. The predictions are done as for how the equilibrium between different polytypes will be shifted under the effect of hydrostatic pressure. The band structures are inspected under the angle of identifying features specific for different polytypes and with respect to modifications of the band dispersions brought about by the use of modified Becke-Johnson (mBJ) scheme for the exchange-correlation potential. As another way to improve the predictions of bandgaps values, hybrid functional calculations according to the HSE06 scheme are performed for the band structures, and the relation with the mBJ results are discussed. Both methods nicely agree with the experimental results and with state-of-the-art GW calculations. Some discrepancies are identified in cases of close competition between the direct and indirect gap (e.g., in GaSe); moreover, the accurate placement of bands revealing relatively localized states is slightly different according to mBJ and HSE06 schemes.},
  keywords = {InSe β (2H),InSe γ (3R),InSe ε (2H)},
  annotation = {ZSCC: 0000013}
}

@article{stone2019atomic,
  title = {Atomic and Electronic Structure of Domains Walls in a Polar Metal},
  author = {Stone, Greg and Puggioni, Danilo and Lei, Shiming and Gu, Mingqiang and Wang, Ke and Wang, Yu and Ge, Jianjian and Lu, Xue-Zeng and Mao, Zhiqiang and Rondinelli, James M. and Gopalan, Venkatraman},
  year = {2019},
  month = jan,
  journal = {Physical Review B},
  volume = {99},
  number = {1},
  pages = {014105},
  publisher = {{American Physical Society}},
  doi = {10/gg3f5d},
  abstract = {Polar metals counterintuitively bring two well-known phenomena into coexistence, namely, bulk polar displacements, and an electronic Fermi surface giving rise to metallic conduction. However, little is known about the polar domains or domain walls in such materials. Using atomic resolution electron microscopy imaging combined with first principles density functional theory, we show that uncharged head-to-tail walls, and ``charged'' head-to-head and tail-to-tail walls can exist in the bulk of such crystals of polar metals Ca3Ru2O7, where both structural changes at the wall as well as electrostatic considerations define the wall nature. Significant built-in potentials of 30\textendash 170 meV are predicted at such walls.},
  annotation = {00000  ZSCC: 0000007}
}

@article{su2021controllable,
  title = {Controllable {{vdW Contacts}} between the {{Ferroelectric In}}{\textsubscript{2}}{{Se}}{\textsubscript{3}} {{Monolayer}} and {{Two-Dimensional Metals}}},
  author = {Su, Haishan and Hu, Ting and Wu, Fang and Kan, Erjun},
  year = {2021},
  month = may,
  journal = {The Journal of Physical Chemistry C},
  publisher = {{American Chemical Society}},
  issn = {1932-7447},
  doi = {10.1021/acs.jpcc.1c01800},
  abstract = {Developing low dimensional multifunctional devices becomes more and more important as the scale of the field-effect transistors decreases. Although van der Waals (vdW) contacts between two-dimensional semiconductors and metals have shown great potential, direct control of the performance of such contacts has still not been explored. Here, we predicted that vdW contacts between ferroelectric semiconductors and metals can present multifunctional performances switched by an external electric field. Based on first-principles calculations, our results shown that when the polarization direction of In2Se3 is reversed from downward to upward, the original n-type Schottky contact turned out to be the highly desirable ohmic contact in In2Se3/M3C2(M= Zn, Cd, Hg), while a transition from the p-type to n-type Schottky contact is observed in VS2 and TSe2 (T = V, Nb, Ta) metals. The calculated pinning factors suggest a weak Fermi-level pinning effect and tunable Schottky barrier height. Thus, our results show the strong effect of ferroelectric polarization on the properties of vdW contacts, which is important for designing and fabricating high-performance field-effect transistors.},
  keywords = {DFT,ferroelectric,In2Se3 α}
}

@article{sucharitakul2015intrinsic,
  title = {Intrinsic {{Electron Mobility Exceeding}} 103 Cm2/({{V}} s) in {{Multilayer InSe FETs}}},
  author = {Sucharitakul, Sukrit and Goble, Nicholas J. and Kumar, U. Rajesh and Sankar, Raman and Bogorad, Zachary A. and Chou, Fang-Cheng and Chen, Yit-Tsong and Gao, Xuan P. A.},
  year = {2015},
  month = jun,
  journal = {Nano Letters},
  volume = {15},
  number = {6},
  pages = {3815--3819},
  publisher = {{American Chemical Society}},
  issn = {1530-6984},
  doi = {10.1021/acs.nanolett.5b00493},
  abstract = {Graphene-like two-dimensional (2D) materials not only are interesting for their exotic electronic structure and fundamental electronic transport or optical properties but also hold promises for device miniaturization down to atomic thickness. As one material belonging to this category, InSe, a III\textendash VI semiconductor, not only is a promising candidate for optoelectronic devices but also has potential for ultrathin field effect transistor (FET) with high mobility transport. In this work, various substrates such as PMMA, bare silicon oxide, passivated silicon oxide, and silicon nitride were used to fabricate multilayer InSe FET devices. Through back gating and Hall measurement in four-probe configuration, the device's field effect mobility and intrinsic Hall mobility were extracted at various temperatures to study the material's intrinsic transport behavior and the effect of dielectric substrate. The sample's field effect and Hall mobilities over the range of 20\textendash 300 K fall in the range of 0.1\textendash 2.0 \texttimes{} 103 cm2/(V s), which are comparable or better than the state of the art FETs made of widely studied 2D transition metal dichalcogenides.},
  keywords = {Carrier density,device,InSe,mobility}
}

@article{sun2020einse,
  title = {{$\epsilon$}-{{InSe}} Single Crystals Grown by a Horizontal Gradient Freeze Method},
  author = {Sun, Maojun and Wang, Wei and Zhao, Qinghua and Gan, Xuetao and Sun, Yuanhui and Jie, Wanqi and Wang, Tao},
  year = {2020},
  month = nov,
  journal = {CrystEngComm},
  volume = {22},
  number = {45},
  pages = {7864--7869},
  publisher = {{The Royal Society of Chemistry}},
  issn = {1466-8033},
  doi = {10.1039/D0CE01271H},
  abstract = {Indium selenide (InSe) single crystals have been considered as promising candidates for future optical, electrical, and optoelectronic device applications. In particular, due to its 2H stacking and non-centrosymmetric feature, {$\epsilon$}-InSe is highly desirable for second harmonic generation. However, due to its complex phase diagram, the high chemical activity of the elements, and the large formation energy, single-phase crystal growth of {$\epsilon$}-InSe still remains a challenge. In this work, we present our efforts using a horizontal gradient freeze (HGF) method to fabricate InSe single crystals for the first time, whose high-quality crystallinity has been confirmed by both X-ray diffraction (XRD) and transmission electron microscopy (TEM). Moreover, we further combine the photoluminescence, Raman spectroscopy and infrared absorption data to identify this single crystal to be {$\epsilon$}-InSe. Finally, thickness-dependent second harmonic generation (SHG) measurements were carried out on our few-layer InSe samples, and the results demonstrate its promising application for non-linear optics.},
  langid = {english},
  keywords = {InSe ε (2H),photoluminescence,Raman,Raman peaks,second harmonic generation,TEM}
}

@article{suresh2008bias,
  title = {Bias Stress Stability of Indium Gallium Zinc Oxide Channel Based Transparent Thin Film Transistors},
  author = {Suresh, A. and Muth, J. F.},
  year = {2008},
  month = jan,
  journal = {Applied Physics Letters},
  volume = {92},
  number = {3},
  pages = {033502},
  publisher = {{American Institute of Physics}},
  issn = {0003-6951},
  doi = {10.1063/1.2824758},
  abstract = {The effects of bias stress on transistor performance are important when considering nontraditional channel materials for thin film transistors. Applying a gate bias stress to indium gallium zinc oxide transparent thin film transistors was found to induce a parallel threshold voltage shift without changing the field effect mobility or the subthreshold gate voltage swing. The threshold voltage change is logarithmically dependent on the duration of the bias stress implying a charge tunneling mechanism resulting in trapped negative charge screening the applied gate voltage.}
}

@article{suryanarayana2012evolution,
  title = {Evolution of Polarization and Space Charges in Semiconducting Ferroelectrics},
  author = {Suryanarayana, Phanish and Bhattacharya, Kaushik},
  year = {2012},
  month = feb,
  journal = {Journal of Applied Physics},
  volume = {111},
  number = {3},
  pages = {034109},
  publisher = {{American Institute of Physics}},
  issn = {0021-8979},
  doi = {10.1063/1.3678598},
  abstract = {Ferroelectric perovskites and polymers that are used in a variety of electronic, ultrasonic, and optical applications are often wide-band-gap semiconductors. We present a time-dependent and thermodynamically consistent theory that describes the evolution of polarization and space charges in such materials. We then use it to show that the semiconducting nature of ferroelectrics can have a profound effect on polarization domain switching, hysteresis, and leakage currents. Further, we show how hysteresis and leakage are affected by doping, film thickness, electrode work function, ambient temperature, and loading frequency.}
}

@article{swain2019polarization,
  title = {Polarization Controlled Photovoltaic and Self-Powered Photodetector Characteristics in {{Pb-free}} Ferroelectric Thin Film},
  author = {Swain, Atal Bihari and Rath, Martando and Biswas, Pranab Parimal and Rao, M. S. Ramachandra and Murugavel, P.},
  year = {2019},
  month = jan,
  journal = {APL Materials},
  volume = {7},
  number = {1},
  pages = {011106},
  publisher = {{American Institute of Physics}},
  doi = {10.1063/1.5064454},
  abstract = {Ferroelectrics are considered next generation photovoltaic (PV) materials. In this work, a switchable and large PV effect is demonstrated in a Pb-free ferroelectric 0.5Ba(Zr0.2Ti0.8)O3-0.5(Ba0.7Ca0.3)TiO3 (BZT-BCT) thin film fabricated by a pulsed laser deposition technique. The material shows a remarkable PV output of 0.81 V due to its morphotropic phase boundary composition. The observed PV effect is analyzed on the basis of the interfacial Schottky barrier and bulk depolarization field. The poling dependent PV studies revealed that although the Schottky and depolarization field contribute to the PV effect, the latter dominates the PV response beyond the coercive field. Additionally, the importance of this compound in the field of a self-biased photodetector is elucidated in terms of calculated photodetector parameters such as responsivity and detectivity. The explored results will bring significant advancement in the field of ferroelectric PV, UV solid state detector applications and also give an additional dimension to the multifunctional ability of the BZT-BCT system.},
  keywords = {BZT-BCT}
}

@article{swain2020understanding,
  title = {Understanding the {{Mechanism}} of {{Ferroelectric Phase Transition}} in {{RbHSO}}{\textsubscript{4}}: {{A High-Pressure Raman Investigation}}},
  shorttitle = {Understanding the {{Mechanism}} of {{Ferroelectric Phase Transition}} in {{RbHSO4}}},
  author = {Swain, Diptikanta and Bhadram, Venkata Srinu and Pradhan, Gopal K. and Narayana, Chandrabhas},
  year = {2020},
  month = jun,
  journal = {Inorganic Chemistry},
  volume = {59},
  number = {12},
  pages = {7960--7965},
  publisher = {{American Chemical Society}},
  issn = {0020-1669},
  doi = {10.1021/acs.inorgchem.9b03340},
  abstract = {Previous high-pressure dielectric and diffraction studies on rubidium hydrogen sulfate (RbHSO4) observed ferroelectric phase transition below 1 GPa pressure. We have performed high-pressure Raman spectroscopy studies on RbHSO4 up to a maximum pressure of 5.15 GPa and at ambient temperature to understand the microscopic origin and mechanism of ferroelectric transition. On the basis of the pressure dependence of Raman mode frequencies and their full-width at half-maxima, we observed a transition around a pressure of 0.3 GPa, similar to the ferroelectric transition discovered in dielectric measurements, followed by another transition around 2.4 GPa. These phase transitions are evident from the appearance/disappearance of Raman-active modes and the change in the slope of frequencies with pressures. From the pressure dependence of the S\textendash O and S\textendash OH frequencies, we deduce that HSO4\textendash{} ion ordering results in ferroelectric phase transition around 0.3 GPa. Further, the transition around 2.4 GPa pressure is associated with significant changes in the stretching and bending vibrational frequencies and indicates a structural phase transition with possible lowering of the crystal symmetry. Interestingly, no significant changes are observed in the Raman spectrum around 1 GPa, at which a phase transition was noticed in earlier X-ray and dielectric studies.}
}

@book{sze2012semiconductor,
  title = {Semiconductor {{Devices}}: {{Physics}} and {{Technology}}, 3rd {{Edition}}: {{Physics}} and {{Technology}}},
  shorttitle = {Semiconductor {{Devices}}},
  author = {Sze, Simon M. and Lee, Ming-Kwei},
  year = {2012},
  month = apr,
  publisher = {{Wiley Global Education}},
  abstract = {The awaited revision of Semiconductor Devices: Physics and Technology offers more than 50\% new or revised material that reflects a multitude of important discoveries and advances in device physics and integrated circuit processing.   Offering a basic introduction to physical principles of modern semiconductor devices and their advanced fabrication technology, the third edition presents students with theoretical and practical aspects of every step in device characterizations and fabrication, with an emphasis on integrated circuits.   Divided into three parts, this text covers the basic properties of semiconductor materials, emphasizing silicon and gallium arsenide; the physics and characteristics of semiconductor devices bipolar, unipolar special microwave and photonic devices; and the latest processing technologies, from crystal growth to lithographic pattern transfer.},
  googlebooks = {WdcbAAAAQBAJ},
  isbn = {978-1-118-13983-7},
  langid = {english},
  keywords = {Technology \& Engineering / Electronics / Semiconductors}
}

@article{takagaki2013in2se3,
  title = {{{In2Se3}} Films Produced by {{Bi}} Substitution in the Hot-Wall-Epitaxy Growth of {{Bi2Se3}} Films on {{In-containing}} Surfaces},
  author = {Takagaki, Y. and Jenichen, B. and Jahn, U. and Ramsteiner, M. and Biermann, K.},
  year = {2013},
  month = oct,
  journal = {Semiconductor Science and Technology},
  volume = {28},
  number = {11},
  pages = {115013},
  issn = {0268-1242},
  doi = {10.1088/0268-1242/28/11/115013},
  abstract = {We demonstrate the production of In2Se3 films as the growth outcome when Bi2Se3 films are deposited using the hot-wall-epitaxy method on the substrates that contain In. The Bi atoms in Bi2Se3 are substituted with the In atoms supplied from the InAs substrates. Despite a large lattice mismatch, {$\alpha$}-In2Se3 layers grow semicoherently on InAs(1 1 1). The substitution is induced on the InP substrates only when the substrate surface is roughened. The phase of the resultant In2Se3 depends on the degree of the surface roughness. When the roughness is not strong, layered structures of {$\alpha$}-In2Se3 are produced by semicoherent heteroepitaxy not only on (1 1 1) but also on high-index surfaces. On heavily damaged InP substrates, the layers primarily consist of {$\gamma$}-In2Se3. We show, in addition, that the In-induced substitution causes the incorporation of Ga atoms in the In\textendash Se compounds on (In,Ga)As surfaces.},
  langid = {english},
  annotation = {00007}
}

@article{takahashi2017polar,
  title = {Polar Metal Phase Stabilized in Strained {{La-doped BaTiO}}{\textsubscript{3{\textsubscript{ films}}}}},
  author = {Takahashi, K. S. and Matsubara, Y. and Bahramy, M. S. and Ogawa, N. and Hashizume, D. and Tokura, Y. and Kawasaki, M.},
  year = {2017},
  month = jul,
  journal = {Scientific Reports},
  volume = {7},
  number = {1},
  pages = {1--7},
  publisher = {{Nature Publishing Group}},
  issn = {2045-2322},
  doi = {10/gg3f48},
  abstract = {Ferroelectric polarization and metallic conduction are two seemingly irreconcilable properties that cannot normally coexist in a single system, as the latter tends to screen the former. Polar metals, however, defy this rule and have thus attracted considerable attention as a new class of ferroelectrics exhibiting novel properties. Here, we fabricate a new polar metal film based on the typical ferroelectric material BaTiO3by combining chemical doping and epitaxial strain induced by a substrate. The temperature dependences of the c-axis lattice constant and the second harmonic generation intensity of La-doped BaTiO3films indicate the existence of polar transitions. In addition, through La doping, films become metallic at the polar phase, and metallicity enhancement at the polar state occurs in low-La-doped films. This intriguing behaviour is effectively explained by our first-principles calculations. Our demonstration suggests that the carrier doping to ferroelectric material with epitaxial strain serves as a new way to explore polar metals.},
  copyright = {2017 The Author(s)},
  langid = {english},
  annotation = {00000  ZSCC: 0000017}
}

@inproceedings{tan2020hot,
  title = {Hot {{Electrons}} as the {{Dominant Source}} of {{Degradation}} for {{Sub-5nm HZO FeFETs}}},
  booktitle = {2020 {{IEEE Symposium}} on {{VLSI Technology}}},
  author = {Tan, Ava J. and Pe{\v s}i{\'c}, Milan and Larcher, Luca and Liao, Yu-Hung and Wang, Li-Chen and Bae, Jong-Ho and Hu, Chenming and Salahuddin, Sayeef},
  year = {2020},
  month = jun,
  pages = {1--2},
  issn = {2158-9682},
  doi = {10.1109/VLSITechnology18217.2020.9265067},
  abstract = {In this work, we demonstrate FDSOI ferroelectric FETs (FeFETs) incorporating 4.5 nm hafnium zirconium oxide, which show a 0.5V memory window at +/-3.3V and a program/erase speed of 1 {$\mu$}s. In typical FeFETs where {$\geq$} 9 nm thick ferroelectric (FE) gate oxides have been used, bulk charge trapping has been identified as the main mechanism for endurance degradation and shrinkage of the memory window (MW). By contrast, we find that the role of bulk trapping in our devices with a much thinner FE layer is minimal. Through a combination of cryogenic temperature-dependent electrical measurements and simulations using the Ginestra\texttrademark{} modeling platform, we identify and prove that hot electron-induced hole damage during the application of negative gate biases is the primary source of endurance degradation and MW closure in FeFETs with scaled oxide layers.},
  keywords = {Computed tomography,Degradation,Hysteresis,Iron,Logic gates,Silicon-on-insulator,Switches}
}

@article{tang2020firstprinciples,
  title = {First-Principles Predication of Facet-Dependent Electronic and Optical Properties in {{InSe}}/{{GaAs}} Heterostructure with Potential in Solar Energy Utilization},
  author = {Tang, Yong and Liu, Meiping and Zhou, Yingtang and Ren, Chuanlai and Zhong, Xiangli and Wang, Jinbin},
  year = {2020},
  month = nov,
  journal = {Journal of Alloys and Compounds},
  volume = {842},
  pages = {155901},
  issn = {0925-8388},
  doi = {10.1016/j.jallcom.2020.155901},
  abstract = {Building two-dimensional (2D) heterostructure emerges novel properties, attracting great attention in materials science. Here, we design InSe/GaAs heterostructures and explore their novel photoelectric properties using first-principles method. Heterostructures have been shown to be direct bandgap semiconductors with type-II band alignment. Meanwhile, the electronic properties of heterostructures are not only sensitive to stacking model but also strongly dependent on the facet of GaAs contacting InSe. The heterostructures, with As-facet contacting InSe, are confirmed to be preeminent photocatalyst for water splitting. While formed with Ga-facet, heterostructures can be used as appropriate photovoltaic material. All heterostructures possess broad absorption range, with high absorption coefficients ({$\sim$}105). Besides, the carrier mobilities are outstanding. Therefore, the above prediction results make the InSe/GaAs heterostructures promising to be used in solar energy utilization.},
  langid = {english},
  keywords = {InSe/GaAs heterostructure,mobility}
}

@article{tang2020novel,
  title = {Novel {{Type}} of {{Synaptic Transistors Based}} on a {{Ferroelectric Semiconductor Channel}}},
  author = {Tang, Bin and Hussain, Sabir and Xu, Rui and Cheng, Zhihai and Liao, Jianhui and Chen, Qing},
  year = {2020},
  month = jun,
  journal = {ACS Applied Materials \& Interfaces},
  volume = {12},
  number = {22},
  pages = {24920--24928},
  publisher = {{American Chemical Society}},
  issn = {1944-8244},
  doi = {10.1021/acsami.9b23595},
  abstract = {Three-terminal synaptic transistors are basic units of neuromorphic computing chips, which may overcome the bottleneck of conventional von Neumann computing. So far, most of the three-terminal synaptic transistors use the dielectric layer to change the state of the channel and mimic the synaptic behavior. For this purpose, special dielectric layers are needed, such as ionic liquids, solid electrolytes, or ferroelectric insulators, which are difficult for miniaturization and integration. Here, we report a novel type of synaptic transistors using a two-dimensional ferroelectric semiconductor, i.e., {$\alpha$}-In2Se3, as the channel material to mimic the synaptic behavior for the first time. The essential synaptic behaviors, such as single-spike response, paired-spike response, and multispike response have been experimentally demonstrated. Most importantly, the conventional gate dielectric material of our transistors may facilitate the miniaturization and batch manufacture of synaptic transistors. The results indicate that the three-terminal synaptic transistors based on two-dimensional ferroelectric semiconductors are very promising for neuromorphic systems.},
  keywords = {device,ferroelectric,FeSmFET,In2Se3 α (2H),PFM}
}

@article{tao2013crystalline,
  title = {Crystalline\textendash{{Crystalline Phase Transformation}} in {{Two-Dimensional In}}{\textsubscript{2}}{{Se}}{\textsubscript{3}} {{Thin Layers}}},
  author = {Tao, Xin and Gu, Yi},
  year = {2013},
  month = aug,
  journal = {Nano Letters},
  volume = {13},
  number = {8},
  pages = {3501--3505},
  issn = {1530-6984},
  doi = {10.1021/nl400888p},
  abstract = {We report, for the first time, the fabrication of single-crystal In2Se3 thin layers using mechanical exfoliation and studies of crystalline\textendash crystalline ({$\alpha$} \textrightarrow{} {$\beta$}) phase transformations as well as the corresponding changes of the electrical properties in these thin layers. Particularly, using electron microscopy and correlative in situ micro-Raman and electrical measurements, we show that, in contrast to bulk single crystals, the {$\beta$} phase can persist in single-crystal thin layers at room temperature (RT). The single-crystal nature of the layers before and after the phase transition allows for unambiguous determination of changes in the electrical resistivity. Specifically, the {$\beta$} phase has an electrical resistivity about 1\textendash 2 orders of magnitude lower than the {$\alpha$} phase. Furthermore, we find that the temperature of the {$\alpha$} \textrightarrow{} {$\beta$} phase transformation increases by as much as 130 K with the layer thickness decreasing from {$\sim$}87 nm to {$\sim$}4 nm. These single-crystal thin layers are ideal for studying the scaling behavior of the phase transformations and associated changes of the electrical properties. For these In2Se3 thin layers, the accessibility of the {$\beta$} phase at RT, with distinct electrical properties than the {$\alpha$} phase, provides the basis for multilevel phase-change memories in a single material system.},
  keywords = {device,flake,In2Se3 α,In2Se3 β,phase transition,phase transition α-β,Raman,Resistance,TEM,XRD},
  annotation = {00000}
}

@article{tao2013ultrafast,
  title = {Ultrafast Carrier Dynamics in Single-Crystal {{In}}{\textsubscript{2}}{{Se}}{\textsubscript{3}} Thin Layers},
  author = {Tao, Xin and Mafi, Elham and Gu, Yi},
  year = {2013},
  month = nov,
  journal = {Applied Physics Letters},
  volume = {103},
  number = {19},
  pages = {193115},
  publisher = {{American Institute of Physics}},
  issn = {0003-6951},
  doi = {10.1063/1.4828558},
  abstract = {Carrier dynamics in single-crystal In2Se3 thin layers with various thicknesses was studied by femtosecond optical pump-probe reflectivity and ultrafast photocurrent measurements. The results suggest that, in thinner (thicker) layers, the carrier recombination dynamics is dominated by three-carrier (bimolecular) Auger process. The Auger time constant was found to decrease with deceasing layer thickness. Surface states were suggested to be the origin of the transition between different Auger processes as the layer thickness varies.},
  keywords = {charge trapping,device,In2Se3 α,photo-transport},
  annotation = {00010},
  file = {C\:\\Users\\ffdra\\Zotero\\storage\\LQSFPPM4\\1.html}
}

@article{tokura2018nonreciprocal,
  title = {Nonreciprocal Responses from Non-Centrosymmetric Quantum Materials},
  author = {Tokura, Yoshinori and Nagaosa, Naoto},
  year = {2018},
  month = sep,
  journal = {Nature Communications},
  volume = {9},
  number = {1},
  pages = {1--14},
  publisher = {{Nature Publishing Group}},
  issn = {2041-1723},
  doi = {10/gfbvcf},
  abstract = {A variety of directional electronic transport phenomena can occur in materials with broken inversion-symmetry. Here, Tokura and Nagaosa review the underlying mechanisms and emergent phenomena of nonreciprocal responses in noncentrosymmetric quantum materials.},
  copyright = {2018 The Author(s)},
  langid = {english},
  annotation = {00000  ZSCC: 0000067}
}

@article{tracy2009observation,
  title = {Observation of Percolation-Induced Two-Dimensional Metal-Insulator Transition in a {{Si MOSFET}}},
  author = {Tracy, L. A. and Hwang, E. H. and Eng, K. and Ten Eyck, G. A. and Nordberg, E. P. and Childs, K. and Carroll, M. S. and Lilly, M. P. and Das Sarma, S.},
  year = {2009},
  month = jun,
  journal = {Physical Review B},
  volume = {79},
  number = {23},
  pages = {235307},
  publisher = {{American Physical Society}},
  doi = {10.1103/PhysRevB.79.235307},
  abstract = {By analyzing the temperature (T) and density (n) dependence of the measured conductivity ({$\sigma$}) of two-dimensional (2D) electrons in the low-density ({$\sim$}1011 cm-2) and temperature (0.02\textendash 10 K) regimes of high-mobility (1.0 and 1.5\texttimes 104 cm2/Vs) Si metal-oxide-semiconductor field-effect transistors, we establish that the putative 2D metal-insulator transition is a density-inhomogeneity-driven percolation transition where the density-dependent conductivity vanishes as {$\sigma$}(n){$\propto$}(n-np)p, with the exponent p{$\sim$}1.2 being consistent with a percolation transition. The ``metallic'' behavior of {$\sigma$}(T) for n{$>$}np is shown to be well described by a semiclassical Boltzmann theory, and we observe the standard weak localization-induced negative magnetoresistance behavior, as expected in a normal Fermi liquid, in the metallic phase.}
}

@article{trolier-mckinstry2020impact,
  title = {Impact of  Ferroelectricity},
  author = {{Trolier-McKinstry}, Trolier-McKinstry},
  year = {2020},
  journal = {Am. Cer. Soc. Bull},
  volume = {99},
  pages = {22--23},
  annotation = {00000  ZSCC: NoCitationData[s0]}
}

@article{tsukada2018raman,
  title = {Raman Scattering Study of the Ferroelectric Phase Transition in {{BaTi}}{\textsubscript{2}}{{O}}{\textsubscript{5}}},
  author = {Tsukada, Shinya and Fujii, Yasuhiro and Yoneda, Yasuhiro and Moriwake, Hiroki and Konishi, Ayako and Akishige, Yukikuni},
  year = {2018},
  month = jan,
  journal = {Physical Review B},
  volume = {97},
  number = {2},
  pages = {024116},
  publisher = {{American Physical Society}},
  doi = {10.1103/PhysRevB.97.024116},
  abstract = {Uniaxial ferroelectric BaTi2O5 with a Curie temperature TC of 743 K was investigated to clarify its paraelectric-ferroelectric phase-transition behavior. The mechanism is discussed on the basis of the structure from short to long ranges determined by synchrotron x-ray diffraction and the lattice dynamics probed by Raman spectroscopy. BaTi2O5 is regarded as a homogeneous system, and the lattice dynamics can be interpreted by the selection rules and tensor properties of the homogeneous structure. Angle-resolved polarized Raman spectroscopy clearly shows that an A-mode-type overdamped phonon plays the key role in the phase transition. Using a combination of experimental results and first-principles calculations, we explain the phase transition as follows: In one of three TiO6 octahedral units, Ti vibrates along the b axis opposite an oxygen octahedral unit with large damping in the paraelectric phase, whereas this vibration is frozen in the ferroelectric phase, leading to a change in the space group from nonpolar C2/m to polar C2.}
}

@article{tsukada2020multivariate,
  title = {Multivariate Curve Resolution for Angle-Resolved Polarized {{Raman}} Spectroscopy of Ferroelectric Crystals},
  author = {Tsukada, Shinya and Fujii, Yasuhiro},
  year = {2020},
  month = mar,
  journal = {Japanese Journal of Applied Physics},
  volume = {59},
  number = {SK},
  pages = {SKKA03},
  publisher = {{IOP Publishing}},
  issn = {1347-4065},
  doi = {10.35848/1347-4065/ab78e8},
  langid = {english}
}

@article{tung2014physics,
  title = {The Physics and Chemistry of the {{Schottky}} Barrier Height},
  author = {Tung, Raymond T. (董梓則)},
  year = {2014},
  month = jan,
  journal = {Applied Physics Reviews},
  volume = {1},
  number = {1},
  pages = {011304},
  doi = {10.1063/1.4858400},
  abstract = {The formation of the Schottky barrier height (SBH) is a complex problem because of the dependence of the SBH on the atomic structure of the metal-semiconductor (MS) interface. Existing models of the SBH are too simple to realistically treat the chemistry exhibited at MS interfaces. This article points out, through examination of available experimental and theoretical results, that a comprehensive, quantum-mechanics-based picture of SBH formation can already be constructed, although no simple equations can emerge, which are applicable for all MS interfaces. Important concepts and principles in physics and chemistry that govern the formation of the SBH are described in detail, from which the experimental and theoretical results for individual MS interfaces can be understood. Strategies used and results obtained from recent investigations to systematically modify the SBH are also examined from the perspective of the physical and chemical principles of the MS interface.},
  keywords = {review article},
  annotation = {00000}
}

@article{valasek1921piezoelectric,
  title = {Piezo-{{Electric}} and {{Allied Phenomena}} in {{Rochelle Salt}}},
  author = {Valasek, J.},
  year = {1921},
  month = apr,
  journal = {Physical Review},
  volume = {17},
  number = {4},
  pages = {475--481},
  publisher = {{American Physical Society}},
  doi = {10.1103/physrev.17.475},
  abstract = {Electric Hysteresis in Rochelle Salt.\textemdash On the doublet theory of dielectric action, the dielectric displacement D, electric intensity E, and the polarization P are analogous to B, H, and I in the case of magnetism. Rochelle salt shows an electric hysteresis in P analogous to the magnetic hysteresis in the case of iron. The loops obtained are displaced from the origin by an amount which gives a measure of the permanent polarization in the natural state. The moment per unit volume in the natural state is of the order of 50 e.s.u./cm.2 under ordinary conditions, this being about 13.3 \texttimes{} 10-21 e.s.u./cm.2 per molecule.},
  annotation = {01121  ZSCC: 0001120}
}

@article{vanlanduyt1975phase,
  title = {Phase Transitions in {{In}}{\textsubscript{2}}{{Se}}{\textsubscript{3}} as Studied by Electron Microscopy and Electron Diffraction},
  author = {{van Landuyt}, J. and {van Tendeloo}, G. and Amelinckx, S.},
  year = {1975},
  month = jul,
  journal = {physica status solidi (a)},
  volume = {30},
  number = {1},
  pages = {299--314},
  publisher = {{John Wiley \& Sons, Ltd}},
  issn = {0031-8965},
  doi = {10.1002/pssa.2210300131},
  abstract = {Abstract Indium selenide undergoes several reversible inter- and intrapolytypic phase transitions, above and below room temperature. A number of superstructures of the hexagonal (or rhombohedral) room temperature phase have been discovered by means of electron diffraction. The transition at 200 \textdegree C which corresponds to the {$\alpha$} ? ? transformation is accompanied by intense non-radial diffuse scattering, which is attributed to anisotropic transverse acoustic phonons. On cooling, a one-dimensional deformation modulated structure is formed, which is interpreted as the frozen-in configuration of the predominant vibration mode, which becomes soft below the transition temperature in the range 60 to 200 \textdegree C. This transition shows a large hysteresis, which is also found in thermal expansion. A new low temperature phase, which is presumably orthorhombic, is discovered on cooling below ?125 \textdegree C. The structure of this phase can alternatively be described as being the result of pairing of indium ions or as the frozen-in configuration of a longitudinal mode. Both phases exhibit a domain structure, which in the case of the {$\alpha$}-phase can be revealed by lattice resolution. Several high temperature superstructures are observed by means of electron diffraction. A direct relationship with the ?-phase is established and in a number of cases the superperiods are directly imaged.},
  keywords = {In2Se3 β',phase transition,phase transition α-β,phase transition β-γ},
  annotation = {ZSCC: 0000078}
}

@article{vassilev1998thermodynamic,
  title = {Thermodynamic Studies of the {{In}}\textendash{{Se}} System},
  author = {Vassilev, George P. and Daouchi, Brahim and Record, Marie-Christine and Tedenac, Jean-Claude},
  year = {1998},
  month = may,
  journal = {Journal of Alloys and Compounds},
  volume = {269},
  number = {1},
  pages = {107--115},
  issn = {0925-8388},
  doi = {10/cdk5tw},
  abstract = {Thermochemical and X-ray studies of the In\textendash Se system have been performed. The temperatures of the invariant equilibria: Liq\textendash Liq1\textendash In4Se3; Liq\textendash In4Se3\textendash InSe; Liq\textendash InSe\textendash In6Se7 and Liq\textendash In6Se7\textendash In2Se3, Liq\textendash In2Se3, In2Se3\textendash Liq\textendash Liq2, and In2Se3\textendash Liq\textendash Se have been determined to be, respectively: 794 K; 831 K; 891 K; 938 K, 1041 K, and 491.6 K, with congruent melting of In2Se3 1158.4 K. The experimental studies of the enthalpies of fusion for the four compounds give the following values: {$\Delta$}Hm,In4Se3=7.7 kJmol-1; {$\Delta$}Hm,InSe=9.6 kJmol-1; {$\Delta$}Hm,In6Se7=9.14 kJmol-1, {$\Delta$}Hf,In2Se3=0.103 kJmol-1 (all per mole of atoms). A non-negligible homogeneity region at about 929 K has been revealed for In6Se7. The temperatures and enthalpies of the polymorphic transitions of In2Se3 (according to the nomenclature used until now) were determined: 471 K ({$\alpha\rightarrow\beta$}), 913 K ({$\beta\rightarrow\gamma$}) and 1021 K ({$\gamma\rightarrow\delta$}), respectively, with {$\Delta$}Htr{$\alpha\rightarrow\beta$}=790 Jmol-1; {$\Delta$}Htr{$\beta\rightarrow\gamma$}=650 Jmol-1; and {$\Delta$}Htr{$\gamma\rightarrow\delta$}=190 Jmol-1. New schemes describing the polytypic transitions of the In2Se3 have been proposed. It is shown that a hexagonal modification a=0.717 nm, c=1.941 nm (most known as {$\gamma$}(H)\textendash In2Se3) is stable at room temperature while at temperatures higher than {$\approx$}823 K it transforms to another hexagonal modification a=0.4025 nm, c=1.9235 nm (predominantly known as {$\alpha$}(H)\textendash In2Se3). This one can be quenched to room temperature and both of them produce various other metastable modifications on heating or on cooling. The thermodynamic properties of the four line compounds (In4Se3, InSe, In6Se7 and In2Se3) were revised using literature sources and our experimental data. It is possible that the InSe (and not In2Se3) is the most stable compound in the system indium\textendash selenium.},
  langid = {english},
  keywords = {Enthalpies of fusion,In–Se compounds,In2Se3 γ,Thermodynamic stability},
  annotation = {00000  ZSCC: 0000023}
}

@article{vasudevan2017ferroelectric,
  title = {Ferroelectric or Non-Ferroelectric: {{Why}} so Many Materials Exhibit ``Ferroelectricity'' on the Nanoscale},
  shorttitle = {Ferroelectric or Non-Ferroelectric},
  author = {Vasudevan, Rama K. and Balke, Nina and Maksymovych, Peter and Jesse, Stephen and Kalinin, Sergei V.},
  year = {2017},
  month = may,
  journal = {Applied Physics Reviews},
  volume = {4},
  number = {2},
  pages = {021302},
  publisher = {{American Institute of Physics}},
  doi = {10.1063/1.4979015},
  abstract = {Ferroelectric materials have remained one of the major focal points of condensed matter physics and materials science for over 50 years. In the last 20 years, the development of voltage-modulated scanning probe microscopy techniques, exemplified by Piezoresponse force microscopy (PFM) and associated time- and voltage spectroscopies, opened a pathway to explore these materials on a single-digit nanometer level. Consequently, domain structures and walls and polarization dynamics can now be imaged in real space. More generally, PFM has allowed studying electromechanical coupling in a broad variety of materials ranging from ionics to biological systems. It can also be anticipated that the recent Nobel prize [``The Nobel Prize in Chemistry 2016,'' http://www.nobelprize.org/nobel\_prizes/chemistry/laureates/2016/ (Nobel Media, 2016)] in molecular electromechanical machines will result in rapid growth in interest in PFM as a method to probe their behavior on single device and device assembly levels. However, the broad introduction of PFM also resulted in a growing number of reports on the nearly ubiquitous presence of ferroelectric-like phenomena including remnant polar states and electromechanical hysteresis loops in materials which are non-ferroelectric in the bulk or in cases where size effects are expected to suppress ferroelectricity. While in certain cases plausible physical mechanisms can be suggested, there is remarkable similarity in observed behaviors, irrespective of the materials system. In this review, we summarize the basic principles of PFM, briefly discuss the features of ferroelectric surfaces salient to PFM imaging and spectroscopy, and summarize existing reports on ferroelectric-like responses in non-classical ferroelectric materials. We further discuss possible mechanisms behind observed behaviors and possible experimental strategies for their identification.},
  keywords = {review article},
  annotation = {ZSCC: 0000109}
}

@article{vilaplana2018experimental,
  title = {Experimental and {{Theoretical Studies}} on {$\alpha$}-{{In}}{\textsubscript{2}}{{Se}}{\textsubscript{3}} at {{High Pressure}}},
  author = {Vilaplana, Rosario and Parra, Samuel Gallego and {Jorge-Montero}, Alejandro and {Rodr{\'i}guez-Hern{\'a}ndez}, Pl{\'a}cida and Munoz, Alfonso and Errandonea, Daniel and Segura, Alfredo and Manj{\'o}n, Francisco Javier},
  year = {2018},
  month = jul,
  journal = {Inorganic Chemistry},
  volume = {57},
  number = {14},
  pages = {8241--8252},
  issn = {0020-1669},
  doi = {10.1021/acs.inorgchem.8b00778},
  abstract = {{$\alpha$}(R)-In2Se3 has been experimentally and theoretically studied under compression at room temperature by means of X-ray diffraction and Raman scattering measurements as well as by ab initio total-energy and lattice-dynamics calculations. Our study has confirmed the {$\alpha$} (R3m) \textrightarrow{} {$\beta{'}$} (C2/m) \textrightarrow{} {$\beta$} (R{$\overline 3$}m) sequence of pressure-induced phase transitions and has allowed us to understand the mechanism of the monoclinic C2/m to rhombohedral R{$\overline 3$}m phase transition. The monoclinic C2/m phase enhances its symmetry gradually until a complete transformation to the rhombohedral R{$\overline 3$}m structure is attained above 10\textendash 12 GPa. The second-order character of this transition is the reason for the discordance in previous measurements. The comparison of Raman measurements and lattice-dynamics calculations has allowed us to tentatively assign most of the Raman-active modes of the three phases. The comparison of experimental results and simulations has helped to distinguish between the different phases of In2Se3 and resolve current controversies.},
  keywords = {In2Se3 α,In2Se3 α (3R),In2Se3 β,In2Se3 β',phase transition,phase transition pressure,phase transition α-β,Raman},
  annotation = {00003}
}

@article{viswanathan2004space,
  title = {Space Charge Limited Current, Variable Range Hopping and Mobility Gap in Thermally Evaporated Amorphous {{InSe}} Thin Films},
  author = {Viswanathan, C. and Gopal, S. and Thamilselvan, M. and PremNazeer, K. and Mangalaraj, D. and Narayandass, Sa K. and Yi, Junsin and Ingram, David C.},
  year = {2004},
  month = dec,
  journal = {Journal of Materials Science: Materials in Electronics},
  volume = {15},
  number = {12},
  pages = {787--792},
  publisher = {{Kluwer Academic Publishers}},
  issn = {1573-482X},
  doi = {10.1023/B:JMSE.0000045300.00451.51},
  abstract = {We have analyzed the properties of as-deposited InSe thin films, deposited onto well cleaned glass substrates under a vacuum of 10-5 Torr, using X-ray diffraction, Rutherford back scattering, energy dispersive analysis of X-rays, optical transmittance and current\textendash voltage (120\textendash 390 K) measurements. Allowed and indirect transition was identified and the mobility gap was determined as 1.44 eV. Under low field ({$<$}1\texttimes 105 V cm-1) and in the temperature range of 130\textendash 200 K, the conductivity in the films was behaving like that of Mott's variable-range hopping (VRH) type. Mott's parameters such as characteristics temperature (T 0), hopping range (R hop), hopping energy (W hop), values of localized states density N (E F), and activation energy (E a) were estimated. In the temperature range 210\textendash 290 K, thermionic conduction mechanism plays a dominant role and its activation energy was calculated. At high field ({$>$}2\texttimes 105 V cm-1) and in the temperature range of 300\textendash 390 K, space charge limited conduction currents (SCLC) mechanism was observed and the related parameters, such as electron density (n 0), trap density (n t), the ratio between free electron density to the total electron density ({$\Theta$}), mobility ({$\mu$}) and the effective mobility ({$\mu$}eff) of the InSe film of typical thickness 265 nm were calculated and the results are discussed.},
  copyright = {2004 Kluwer Academic Publishers},
  langid = {english},
  keywords = {Band gap,EDAX,film,InSe,mobility,Resistivity/conductivity,Resistivity/conductivity-temperature,SCLC,variable range hopping,XRD}
}

@article{vu2020collective,
  title = {Collective Ground States in Small Lattices of Coupled Quantum Dots},
  author = {Vu, DinhDuy and Das Sarma, S.},
  year = {2020},
  month = apr,
  journal = {Physical Review Research},
  volume = {2},
  number = {2},
  pages = {023060},
  publisher = {{American Physical Society}},
  doi = {10.1103/PhysRevResearch.2.023060},
  abstract = {Motivated by recent developments on the fabrication and control of semiconductor-based quantum dots, we theoretically study a finite system of tunnel-coupled quantum dots with the electrons interacting through the long-range Coulomb interaction. When the interelectron separation is large and the quantum dot confinement potential is weak, the system behaves as an effective Wigner crystal with a period determined by the electron average density with considerable electron hopping throughout the system. For stronger periodic confinement potentials, however, the system makes a crossover to a Mott-type ground state where the electrons are completely localized at the individual dots with little interdot tunneling. In between these two phases, the system is essentially a strongly correlated electron liquid with intersite electron hopping constrained by strong Coulomb interaction. We characterize this Wigner-Mott-liquid quantum crossover with detailed numerical finite-size diagonalization calculations of the coupled interacting quantum dot system, showing that these phases can be smoothly connected by tuning the system parameters. Experimental feasibility of observing such a hopping-tuned Wigner-Mott-liquid crossover in currently available semiconductor quantum dots is discussed. In particular, we connect our theoretical results to recent quantum-dot-based quantum emulation experiments where a collective Coulomb blockade was demonstrated. We discuss realistic disorder effects on our theoretical findings. One conclusion of our work is that experiments must explore lower density quantum dot arrays in order to clearly observe the Wigner phase although the Mott-liquid crossover phenomenon should already manifest itself in the currently available quantum dot arrays. We also suggest a direct experimental electron density probe, such as atomic force microscopy or scanning tunneling microscopy, for a clear observation of the effective Wigner crystal phase.}
}

@article{wan2018roomtemperature,
  title = {Room-Temperature Ferroelectricity and a Switchable Diode Effect in Two-Dimensional {$\alpha$}-{{In}}{\textsubscript{2}}{{Se}}{\textsubscript{3}} Thin Layers},
  author = {Wan, Siyuan and Li, Yue and Li, Wei and Mao, Xiaoyu and Zhu, Wenguang and Zeng, Hualing},
  year = {2018},
  month = aug,
  journal = {Nanoscale},
  volume = {10},
  number = {31},
  pages = {14885--14892},
  issn = {2040-3372},
  doi = {10.1039/C8NR04422H},
  abstract = {Nanoscale room-temperature ferroelectricity is ideal for developing advanced non-volatile high-density memories. However, reaching the thin film limit in conventional ferroelectrics is a long-standing challenge due to the presence of the critical thickness effect. van der Waals materials, thanks to their stable layered structure, saturated interfacial bonding and weak interlayer couplings, are promising for exploring ultra-thin two-dimensional (2D) ferroelectrics and device applications. Here, we demonstrate a switchable room-temperature ferroelectric diode built upon a 2D ferroelectric {$\alpha$}-In2Se3 layer as thin as 5 nm in the form of a graphene/{$\alpha$}-In2Se3 heterojunction. The intrinsic out-of-plane ferroelectricity of the {$\alpha$}-In2Se3 thin layers is evidenced by the observation of reversible spontaneous electric polarization with a relatively low coercive electric field of {$\sim$}2 \texttimes{} 105 V cm-1 and a typical ferroelectric domain size of around tens {$\mu$}m2. Owing to the out-of-plane ferroelectricity of the {$\alpha$}-In2Se3 layer, the Schottky barrier at the graphene/{$\alpha$}-In2Se3 interface can be effectively tuned by switching the electric polarization with an applied voltage, leading to a pronounced switchable double diode effect with an on/off ratio of {$\sim$}105. Our results offer a new way for developing novel nanoelectronic devices based on 2D ferroelectrics.},
  langid = {english},
  keywords = {device,ferroelectric,Graphene,In2Se3 α (3R),PFM,Switching/FTJ},
  annotation = {00000}
}

@article{wan2019nonvolatile,
  title = {Nonvolatile {{Ferroelectric Memory Effect}} in {{Ultrathin}} {$\alpha$}-{{In}}{\textsubscript{2}}{{Se}}{\textsubscript{3}}},
  author = {Wan, Siyuan and Li, Yue and Li, Wei and Mao, Xiaoyu and Wang, Chen and Chen, Chen and Dong, Jiyu and Nie, Anmin and Xiang, Jianyong and Liu, Zhongyuan and Zhu, Wenguang and Zeng, Hualing},
  year = {2019},
  month = may,
  journal = {Advanced Functional Materials},
  volume = {29},
  number = {20},
  pages = {1808606},
  issn = {1616-301X},
  doi = {10.1002/adfm.201808606},
  abstract = {Abstract High-density memory is integral in solid-state electronics. 2D ferroelectrics offer a new platform for developing ultrathin electronic devices with nonvolatile functionality. Recent experiments on layered {$\alpha$}-In2Se3 confirm its room-temperature out-of-plane ferroelectricity under ambient conditions. Here, a nonvolatile memory effect in a hybrid 2D ferroelectric field-effect transistor (FeFET) made of ultrathin {$\alpha$}-In2Se3 and graphene is demonstrated. The resistance of the graphene channel in the FeFET is effectively controllable and retentive due to the electrostatic doping, which stems from the electric polarization of the ferroelectric {$\alpha$}-In2Se3. The electronic logic bit can be represented and stored with different orientations of electric dipoles in the top-gate ferroelectric. The 2D FeFET can be randomly rewritten over more than 105 cycles without losing the nonvolatility. The approach demonstrates a prototype of rewritable nonvolatile memory with ferroelectricity in van der Waals 2D materials.},
  keywords = {device,FeFET,ferroelectric,Graphene,hBN,In2Se3 α,Raman},
  annotation = {00010}
}

@article{wang2016unveiling,
  title = {Unveiling {{Three-Dimensional Stacking Sequences}} of {{1T Phase MoS2 Monolayers}} by {{Electron Diffraction}}},
  author = {Wang, Ziqian and Ning, Shoucong and Fujita, Takeshi and Hirata, Akihiko and Chen, Mingwei},
  year = {2016},
  month = nov,
  journal = {ACS Nano},
  volume = {10},
  number = {11},
  pages = {10308--10316},
  issn = {1936-0851},
  doi = {10/f9c8mw},
  abstract = {The phase transition between semiconducting 1H to metallic 1T phases in monolayered transition metal dichalcogenides (TMDs) essentially involves three-dimensional (3D) structure changes of asymmetric relocations of S atoms at the top and bottom of the one-unit-cell crystals. Even though the phase transition has a profound influence on properties and applications of 2D TMDs, a viable approach to experimentally characterize the stacking sequences of the vertically asymmetrical 1T phase is still not available. Here, we report an electron diffraction method based on dynamic electron scattering to characterize the stacking sequences of 1T MoS2 monolayers. This study provides an approach to unveil the 3D structure of 2D crystals and to explore the underlying mechanisms of semiconductor-to-metal transition of monolayer TMDs.},
  annotation = {00010}
}

@article{wang2017phasedefined,
  title = {Phase-{{Defined}} van Der {{Waals Schottky Junctions}} with {{Significantly Enhanced Thermoelectric Properties}}},
  author = {Wang, Qiaoming and Yang, Liangliang and Zhou, Shengwen and Ye, Xianjun and Wang, Zhe and Zhu, Wenguang and McCluskey, Matthew D. and Gu, Yi},
  year = {2017},
  month = jul,
  journal = {The Journal of Physical Chemistry Letters},
  volume = {8},
  number = {13},
  pages = {2887--2894},
  issn = {1948-7185},
  doi = {10.1021/acs.jpclett.7b01089},
  abstract = {We demonstrate a van der Waals Schottky junction defined by crystalline phases of multilayer In2Se3. Besides ideal diode behaviors and the gate-tunable current rectification, the thermoelectric power is significantly enhanced in these junctions by more than three orders of magnitude compared with single-phase multilayer In2Se3, with the thermoelectric figure-of-merit approaching {$\sim$}1 at room temperature. Our results suggest that these significantly improved thermoelectric properties are not due to the 2D quantum confinement effects but instead are a consequence of the Schottky barrier at the junction interface, which leads to hot carrier transport and shifts the balance between thermally and field-driven currents. This ``bulk'' effect extends the advantages of van der Waals materials beyond the few-layer limit. Adopting such an approach of using energy barriers between van der Waals materials, where the interface states are minimal, is expected to enhance the thermoelectric performance in other 2D materials as well.},
  keywords = {device,In2Se3 α,In2Se3 β,metal insulator transition,photo-transport,photoluminescence,Raman},
  annotation = {00011}
}

@article{wang2018trapped,
  title = {Trapped {{Carrier Scattering}} and {{Charge Transport}} in {{High-Mobility Amorphous Metal Oxide Thin-Film Transistors}}},
  author = {Wang, Xiao and Dodabalapur, Ananth},
  year = {2018},
  month = dec,
  journal = {Annalen der Physik},
  volume = {530},
  number = {12},
  pages = {1800341},
  publisher = {{John Wiley \& Sons, Ltd}},
  issn = {0003-3804},
  doi = {10.1002/andp.201800341},
  abstract = {Abstract The multiple trap and release (MTR) model is extended to more completely and accurately describe charge transport in high-mobility amorphous metal oxide thin-film transistors (TFTs). In addition to trapping and release of charges, other scattering mechanisms that influence mobility are considered along with screening by free carriers. The mobility for each of the dominant scattering mechanisms is calculated using the Boltzmann transport equation (BTE) in the relaxation time approximation. It is found that trapped carriers very effectively scatter the charges that move in extended states. This type of scattering is unique to TFTs. Experimental data from high-mobility amorphous metal oxide TFTs are compared with calculations with very good agreement. At high temperatures, scattering by longitudinal optical phonons and surface phonons becomes significant. This work represents the first successful combination of charge carrier scattering and the BTE with thermally activated MTR transport in a disordered semiconductor. Charge transport in amorphous metal oxide transistors is quantitatively described for the first time and the factors that influence the mobility at various temperatures and charge carrier densities are clearly described. This approach can be used for describing transport in several amorphous and polycrystalline semiconductors with significant disorder and trapping.},
  keywords = {band transport in thin-film transistors,charge transport in amorphous metal oxide transistors,multiple trap and release,trapped carrier scattering}
}

@article{wang2019layerdependent,
  title = {Layer-Dependent Ultrafast Dynamics of {$\alpha$}-{{In}}{\textsubscript{2}}{{Se}}{\textsubscript{3}} Nanoflakes},
  author = {Wang, Rui and Wang, Ting and Zhou, Yu and Wu, Yanling and Zhang, Xiaoxian and He, Xiaoyue and Peng, Hailin and Zhao, Jimin and Qiu, Xiaohui},
  year = {2019},
  month = may,
  journal = {2D Materials},
  volume = {6},
  number = {3},
  pages = {035034},
  publisher = {{IOP Publishing}},
  issn = {2053-1583},
  doi = {10.1088/2053-1583/ab1fb4},
  abstract = {Photodetectors based on {$\alpha$}-phase In2Se3 ultrathin films demonstrate unusually high photoresponsivity comparing to those based on other two-dimensional (2D) materials, such as MoS2. To understand the underlying mechanism, we investigate the ultrafast dynamics of In2Se3 ultrathin films ranging from 11 nm to 40 nm on mica and Au substrates, respectively, analogous to the practical layout of a photodetector. Our results show that the carrier lifetime of {$\alpha$}-phase In2Se3 on mica is nearly independent of thickness and comparable to that of MoS2, and the efficient charge carrier separation occurs on Au substrate. Because all of the key parameters of In2Se3 nanoflakes that determine its photoresponsive behavior are of similar values to those of MoS2, we suggest that the interface effect, i.e. photogating effect and contact resistance, should be responsible for the dramatic photoresponsivity reported for field-effect transistor-type optoelectronic devices.},
  langid = {english},
  keywords = {charge trapping,device,In2Se3 α,photo-transport,XPS},
  annotation = {00000}
}

@article{wang2019redefining,
  title = {Redefining the {{Mobility Edge}} in {{Thin-Film Transistors}}},
  author = {Wang, Xiao and Register, Leonard F. and Dodabalapur, Ananth},
  year = {2019},
  month = jun,
  journal = {Physical Review Applied},
  volume = {11},
  number = {6},
  pages = {064039},
  publisher = {{American Physical Society}},
  doi = {10.1103/PhysRevApplied.11.064039},
  abstract = {In most thin-film transistors, the concept of mobility edge needs to be redefined to take into account important constraints. We describe how the mobility edge concept has to be reinterpreted when applied to thin-film transistors. Charge carriers can be significantly localized due to strong scattering, altering the model of band transport in extended states so that, effectively, only a fraction of carriers can actually move in the extended states, in accordance with a statistical distribution of free paths. It is necessary to explicitly consider this effect in applying conventional semiconductor transport theories based on solutions to the Boltzmann transport equation (BTE). We are then able to apply the BTE with appropriate scattering mechanisms and obtain results that agree well with experiment for the case of a polymer thin-film transistor (TFT). This approach is very well suited to thin-film transistors based on polymer and organic semiconductors, and also many amorphous oxide semiconductors with room temperature mobilities in the range 1\textendash 20 cm2/(Vs).}
}

@article{wang2019schottkybarrier,
  title = {Schottky-Barrier Thin-Film Transistors Based on {{HfO2-capped InSe}}},
  author = {Wang, Yiming and Zhang, Jiawei and Liang, Guangda and Shi, Yanpeng and Zhang, Yifei and Kudrynskyi, Zakhar R. and Kovalyuk, Zakhar D. and Patan{\`e}, Amalia and Xin, Qian and Song, Aimin},
  year = {2019},
  month = jul,
  journal = {Applied Physics Letters},
  volume = {115},
  number = {3},
  pages = {033502},
  publisher = {{American Institute of Physics}},
  issn = {0003-6951},
  doi = {10.1063/1.5096965},
  abstract = {Indium selenide (InSe) is an emerging two-dimensional semiconductor and a promising candidate for next generation thin film transistors (TFTs). Here, we report on Schottky barrier TFTs (SB-TFTs) in which a 0.9-nm-thick HfO2 dielectric layer encapsulates an InSe nanosheet, thus protecting the InSe-channel from the environment and reducing the Schottky-contact resistance through a dielectric dipole effect. These devices exhibit a low saturation source-drain voltage Vsat\,{$<$}\,2\,V and current densities of up to J\,=\,2\,mA/mm, well suited for low-power electronics. We present a detailed analysis of this type of transistor using the Y-function method from which we obtain accurate estimates of the contact resistance and field-effect mobility.},
  keywords = {AFM,device,FET,flake,Heterostructure,mobility}
}

@article{wang2020cryogenic,
  title = {Cryogenic Characterization of a Ferroelectric Field-Effect-Transistor},
  author = {Wang, Zheng and Ying, Hanbin and Chern, Winston and Yu, Shimeng and Mourigal, Martin and Cressler, John D. and Khan, Asif I.},
  year = {2020},
  month = jan,
  journal = {Applied Physics Letters},
  volume = {116},
  number = {4},
  pages = {042902},
  publisher = {{American Institute of Physics}},
  issn = {0003-6951},
  doi = {10.1063/1.5129692},
  abstract = {A ferroelectric field-effect transistor (FeFET) with scaled dimensions (170\,nm and 24\,nm of gate width and length, respectively) and a 10\,nm thick Si doped HfO2HfO2{$<$}math display="inline" overflow="scroll" altimg="eq-00001.gif"{$>$} {$<$}mrow{$>$} {$<$}msub{$>$} {$<$}mrow{$>$} {$<$}mtext{$>$}HfO{$<$}/mtext{$><$}/mrow{$>$} {$<$}mn{$>$}2{$<$}/mn{$><$}/msub{$><$}/mrow{$><$}/math{$>$} ferroelectric in the gate oxide stack are characterized at cryogenic temperatures down to 6.9\,K. We observe that a decrease in temperature leads to an increase in the memory window at the expense of an increased program/erase voltage. This is consistent with the increase in the ferroelectric coercive field due to the suppression of thermally activated domain wall creep motion at cryogenic temperatures. However, the observed insensitivity of the location of the memory window with respect to temperature cannot be explained by the current understanding of the device physics of FeFETs. Such temperature dependent studies of scaled FeFETs can lead to useful insights into their underlying device physics, while providing an assessment of the potential of this emerging technology for cryogenic memory applications.}
}

@article{wang2020exploring,
  title = {Exploring {{Ferroelectric Switching}} in {$\alpha$}-{{In}}{\textsubscript{2}}{{Se}}{\textsubscript{3}} for {{Neuromorphic Computing}}},
  author = {Wang, Lin and Wang, Xiaojie and Zhang, Yishu and Li, Runlai and Ma, Teng and Leng, Kai and Chen, Zhi and Abdelwahab, Ibrahim and Loh, Kian Ping},
  year = {2020},
  month = nov,
  journal = {Advanced Functional Materials},
  volume = {30},
  number = {45},
  pages = {2004609},
  publisher = {{John Wiley \& Sons, Ltd}},
  issn = {1616-301X},
  doi = {10/ghxfwd},
  abstract = {Abstract Recently, 2D ferroelectrics have attracted extensive interest as a competitive platform for implementing future generation functional electronics, including digital memory and brain-inspired computing circuits. Fulfilling their potential requires achieving the interplay between ferroelectricity and electronic characteristics on the device operation level, which is currently lacking since most studies are focused on the verification of ferroelectricity from different 2D materials. Here, by leveraging the ferroelectricity and semiconducting properties of {$\alpha$}-In2Se3, ferroelectric semiconductor field-effect transistors (FeSFETs) are fabricated and their potential as artificial synapses is demonstrated. Multiple conductance states can be induced in {$\alpha$}-In2Se3-based FeSFETs by controlling the out-of-plane polarization, which enables the device to faithfully mimic biosynaptic behaviors. In comparison with charge-trapping-based three-terminal synaptic devices, the electronic synapses based on {$\alpha$}-In2Se3 have the advantages of good controllability, fast learning, and easy integration of gate dielectric, rendering them promising for neuromorphic computing. In addition, an abnormal resistive switching phenomenon in {$\alpha$}-In2Se3 is reported when operated in the in-plane ferroelectric switching mode. The findings pave the way forward for {$\alpha$}-In2Se3-based FeSFETs for developing neuromorphic devices in brain-inspired intelligent systems.},
  keywords = {device,ferroelectric,FeSmFET,In2Se3 α (3R),PFM,Raman,resistive switching},
  annotation = {00001  ZSCC: 0000001  1 citations (Crossref) [2021-02-02]}
}

@article{wang2020temperaturedriven,
  title = {Temperature-{{Driven Gate Geometry Effects}} in {{Nanoscale Cryogenic MOSFETs}}},
  author = {Wang, Zewei and Tang, Zhidong and Guo, Ao and Luo, Xin and Cao, Chengwei and Yuan, Yumeng and Zhang, Xiuhao and Liu, Lingge and Li, Jialun and Cao, Yongfeng and Shao, Qiming and Hu, Shaojian and Chen, Shoumian and Zhao, Yuhang and Kou, Xufeng},
  year = {2020},
  month = may,
  journal = {IEEE Electron Device Letters},
  volume = {41},
  number = {5},
  pages = {661--664},
  issn = {1558-0563},
  doi = {10.1109/LED.2020.2984280},
  abstract = {This paper presents experimental characterizations and device modeling on the nanoscale MOSFETs with 40 nm low-power CMOS technology. Systematic temperature-dependent ID-VGS results of NMOS/PMOS devices reveal that both the threshold voltage and the effective channel mobility exhibit strong correlations with the device size owning to the depletion region broadening around the gate channel at cryogenic temperatures. By taking the temperature-driven gate geometry effects into consideration, a generic physical model with universal fitting parameters is proposed to depict the transfer characteristics of all CMOS transistors across the device size chart, and further validations of the modified BSIM compact model might pave the way for an accurate design of cryogenic electronics applications.},
  keywords = {Cryogenic electronics,effective mobility,gate geometry effects,Logic gates,MOSFET,Semiconductor device modeling,Temperature measurement,threshold voltage,Threshold voltage}
}

@article{wang2021magnetotransport,
  title = {Magnetotransport in Hybrid {{InSe}}/Monolayer Graphene on {{SiC}}},
  author = {Wang, Chih-Yuan and Lin, Yun-Wu and Chuang, Chiashain and Yang, Cheng-Hsueh and Patel, Dinesh K. and Chen, Sheng-Zong and Yeh, Ching-Chen and Chen, Wei-Chen and Lin, Chia-Chun and Chen, Yi-Hsun and Wang, Wei-Hua and Sankar, Raman and Chou, Fang-Cheng and Kruskopf, Mattias and Elmquist, Randolph E. and Liang, Chi-Te},
  year = {2021},
  month = jan,
  journal = {Nanotechnology},
  volume = {32},
  number = {15},
  pages = {155704},
  publisher = {{IOP Publishing}},
  issn = {0957-4484},
  doi = {10.1088/1361-6528/abd726},
  abstract = {The magnetotransport properties of a hybrid InSe/monolayer graphene in a SiC system are systematically studied. Compared to those of its bare graphene counterpart, in InSe/graphene, we can effectively modify the carrier density, mobility, effective mass, and electron\textendash electron (e\textendash e) interactions enhanced by weak disorder. We show that in bare graphene and hybrid InSe/graphene systems, the logarithmic temperature (lnT) dependence of the Hall slope R H = {$\delta$}R xy /{$\delta$}B = {$\delta\rho$} xy /{$\delta$}B can be used to probe e\textendash e interaction effects at various temperatures even when the measured resistivity does not show a lnT dependence due to strong electron\textendash phonon scattering. Nevertheless, one needs to be certain that the change of R H is not caused by an increase of the carrier density by checking the magnetic field position of the longitudinal resistivity minimum at different temperatures. Given the current challenges in gating graphene on SiC with a suitable dielectric layer, our results suggest that capping a van der Waals material on graphene is an effective way to modify the electronic properties of monolayer graphene on SiC.},
  langid = {english},
  keywords = {graphene,Hall mobility,InSe,magnetoconductance,mobility,Resistivity/conductivity,Resistivity/conductivity-temperature}
}

@article{wang2021twodimensional,
  title = {Two-Dimensional Ferroelectric Channel Transistors Integrating Ultra-Fast Memory and Neural Computing},
  author = {Wang, Shuiyuan and Liu, Lan and Gan, Lurong and Chen, Huawei and Hou, Xiang and Ding, Yi and Ma, Shunli and Zhang, David Wei and Zhou, Peng},
  year = {2021},
  month = jan,
  journal = {Nature Communications},
  volume = {12},
  number = {1},
  pages = {53},
  publisher = {{Nature Publishing Group}},
  issn = {2041-1723},
  doi = {10.1038/s41467-020-20257-2},
  abstract = {With the advent of the~big data era, applications are more data-centric and energy efficiency issues caused by frequent data interactions, due to the physical separation of memory and computing, will become increasingly severe. Emerging technologies have been proposed to perform analog computing with memory to address the dilemma. Ferroelectric memory has become a promising technology due to field-driven fast switching and non-destructive readout, but endurance and miniaturization are limited. Here, we demonstrate the {$\alpha$}-In2Se3 ferroelectric semiconductor channel device that integrates non-volatile memory and neural computation functions. Remarkable performance includes ultra-fast write speed of 40\,ns, improved endurance through the~internal electric field, flexible adjustment of neural plasticity, ultra-low energy consumption of 234/40 fJ per event for excitation/inhibition, and thermally modulated 94.74\% high-precision iris recognition classification simulation. This prototypical demonstration lays the foundation for an integrated memory computing system with high density and energy efficiency.},
  copyright = {2021 The Author(s)},
  langid = {english},
  keywords = {device,ferroelectric,FeSmFET,In2Se3 α (2H),PFM,Raman,Raman peaks,STEM},
  annotation = {00000  ZSCC: 0000000  0 citations (Crossref) [2021-02-02]}
}

@article{wei2018oxygeninduced,
  title = {Oxygen-Induced Degradation of the Electronic Properties of Thin-Layer {{InSe}}},
  author = {Wei, Xin and Dong, Chaofang and Xu, Aoni and Li, Xiaogang and D. Macdonald, Digby},
  year = {2018},
  journal = {Physical Chemistry Chemical Physics},
  volume = {20},
  number = {4},
  pages = {2238--2250},
  doi = {10.1039/C7CP07446H},
  langid = {english},
  annotation = {00008}
}

@article{wei2020synthesis,
  title = {Synthesis of Tetragonal Prismatic {$\gamma$}-{{In}}{\textsubscript{2}}{{Se}}{\textsubscript{3}} Nanostructures with Predominantly \{110\} Facets and Photocatalytic Degradation of Tetracycline},
  author = {Wei, Xiaofan and Feng, Hange and Li, Lingwei and Gong, Jibin and Jiang, Kun and Xue, Shaolin and Chu, Paul K.},
  year = {2020},
  month = jan,
  journal = {Applied Catalysis B: Environmental},
  volume = {260},
  pages = {118218},
  issn = {0926-3373},
  doi = {10.1016/j.apcatb.2019.118218},
  abstract = {Crystals grown in the direction of high-energy facets have reduced surface energy, a small portion of high-energy crystal facets, and high photocatalytic activity. In this work, {$\gamma$}-In2Se3 nanoparticles with predominantly exposed \{110\} facets are synthesized hydrothermally in the presence of ethylenediaminetetraacetic acid (EDTA). EDTA plays a key role in regulating the exposed \{110\} facets and by adding 0.04 M of EDTA, tetragonal prismatic {$\gamma$}-In2Se3 nanoparticles with the \{110\} facets are produced. Studies of the photocatalytic activity of tetracycline (TC) reveal that the tetragonal prismatic {$\gamma$}-In2Se3 prepared with 0.04 M EDTA has the optimal activity that is about 1.9 times higher than that of conical {$\gamma$}-In2Se3 prepared without EDTA. The capture experiments show that h+ and O2- affect degradation of TC and our results reveal a novel strategy to synthesize {$\gamma$}-In2Se3 with the optimal morphology and photocatalytic activity.},
  langid = {english},
  keywords = {In2Se3 γ,XRD},
  annotation = {00000  ZSCC: 0000003}
}

@article{white2020observation,
  title = {Observation of Two-Dimensional {{Anderson}} Localisation of Ultracold Atoms},
  author = {White, Donald H. and Haase, Thomas A. and Brown, Dylan J. and Hoogerland, Maarten D. and Najafabadi, Mojdeh S. and Helm, John L. and Gies, Christopher and Schumayer, Daniel and Hutchinson, David A. W.},
  year = {2020},
  month = oct,
  journal = {Nature Communications},
  volume = {11},
  number = {1},
  pages = {4942},
  publisher = {{Nature Publishing Group}},
  issn = {2041-1723},
  doi = {10.1038/s41467-020-18652-w},
  abstract = {Anderson localisation \textemdash the inhibition of wave propagation in disordered media\textemdash{} is a surprising interference phenomenon which is particularly intriguing in two-dimensional (2D) systems. While an ideal, non-interacting 2D system of infinite size is always localised, the localisation length-scale may be too large to be unambiguously observed in an experiment. In this sense, 2D is a marginal dimension between one-dimension, where all states are strongly localised, and three-dimensions, where a well-defined phase transition between localisation and delocalisation exists as the energy is increased. Here, we report the results of an experiment measuring the 2D transport of ultracold atoms between two reservoirs, which are connected by a channel containing pointlike disorder. The design overcomes many of the technical challenges that have hampered observation of localisation in previous works. We experimentally observe exponential localisation in a 2D ultracold atom system.},
  copyright = {2020 The Author(s)},
  langid = {english},
  annotation = {Bandiera\_abtest: a Cc\_license\_type: cc\_by Cg\_type: Nature Research Journals Primary\_atype: Research Subject\_term: Bose\textendash Einstein condensates;Matter waves and particle beams;Quantum simulation Subject\_term\_id: bose-einstein-condensates;matter-waves-and-particle-beams;quantum-simulation}
}

@article{wong2007simplified,
  title = {A Simplified Treatment of the {{Landau}} Theory of Phase Transitions for Thin Ferroelectric Films},
  author = {Wong, C. K. and Shin, F. G.},
  year = {2007},
  month = dec,
  journal = {American Journal of Physics},
  volume = {76},
  number = {1},
  pages = {31--38},
  publisher = {{American Association of Physics Teachers}},
  issn = {0002-9505},
  doi = {10/dpz4k3},
  abstract = {A simple analytical approximation based on Landau-Ginzburg theory is developed for ferroelectric thin films with continuous and first-order phase transitions. We show that the polarization profile can be conveniently modeled by a power series expansion that allows us to re-express the Landau-Ginzburg free energy as an effective Landau-Devonshire free energy. Simple expressions are obtained for the properties of ferroelectric films. It is found that the calculated properties based on our effective Landau-Devonshire theory are consistent with numerical results from the Landau-Ginzburg theory.},
  annotation = {ZSCC: 0000004[s0]}
}

@article{woods-robinson2020wide,
  title = {Wide {{Band Gap Chalcogenide Semiconductors}}},
  author = {{Woods-Robinson}, Rachel and Han, Yanbing and Zhang, Hanyu and Ablekim, Tursun and Khan, Imran and Persson, Kristin A. and Zakutayev, Andriy},
  year = {2020},
  month = may,
  journal = {Chemical Reviews},
  volume = {120},
  number = {9},
  pages = {4007--4055},
  publisher = {{American Chemical Society}},
  issn = {0009-2665},
  doi = {10.1021/acs.chemrev.9b00600},
  abstract = {Wide band gap semiconductors are essential for today's electronic devices and energy applications because of their high optical transparency, controllable carrier concentration, and tunable electrical conductivity. The most intensively investigated wide band gap semiconductors are transparent conductive oxides (TCOs), such as tin-doped indium oxide (ITO) and amorphous In\textendash Ga\textendash Zn\textendash O (IGZO), used in displays and solar cells, carbides (e.g., SiC) and nitrides (e.g., GaN) used in power electronics, and emerging halides (e.g., {$\gamma$}-CuI) and 2D electronic materials (e.g., graphene) used in various optoelectronic devices. Compared to these prominent materials families, chalcogen-based (Ch = S, Se, Te) wide band gap semiconductors are less heavily investigated but stand out because of their propensity for p-type doping, high mobilities, high valence band positions (i.e., low ionization potentials), and broad applications in electronic devices such as CdTe solar cells. This manuscript provides a review of wide band gap chalcogenide semiconductors. First, we outline general materials design parameters of high performing transparent semiconductors, as well as the theoretical and experimental underpinnings of the corresponding research methods. We proceed to summarize progress in wide band gap (EG {$>$} 2 eV) chalcogenide materials\textemdash namely, II\textendash VI MCh binaries, CuMCh2 chalcopyrites, Cu3MCh4 sulvanites, mixed-anion layered CuMCh(O,F), and 2D materials\textemdash and discuss computational predictions of potential new candidates in this family, highlighting their optical and electrical properties. We finally review applications\textemdash for example, photovoltaic and photoelectrochemical solar cells, transistors, and light emitting diodes\textemdash that employ wide band gap chalcogenides as either an active or passive layer. By examining, categorizing, and discussing prospective directions in wide band gap chalcogenides, this Review aims to inspire continued research on this emerging class of transparent semiconductors and thereby enable future innovations for optoelectronic devices.}
}

@article{wu2015thicknessdependent,
  title = {Thickness-{{Dependent Dielectric Constant}} of {{Few-Layer In}}{\textsubscript{2}}{{Se}}{\textsubscript{3}} {{Nanoflakes}}},
  author = {Wu, Di and Pak, Alexander J. and Liu, Yingnan and Zhou, Yu and Wu, Xiaoyu and Zhu, Yihan and Lin, Min and Han, Yu and Ren, Yuan and Peng, Hailin and Tsai, Yu-Hao and Hwang, Gyeong S. and Lai, Keji},
  year = {2015},
  month = dec,
  journal = {Nano Letters},
  volume = {15},
  number = {12},
  pages = {8136--8140},
  issn = {1530-6984},
  doi = {10.1021/acs.nanolett.5b03575},
  abstract = {The dielectric constant or relative permittivity ({$\epsilon$}r) of a dielectric material, which describes how the net electric field in the medium is reduced with respect to the external field, is a parameter of critical importance for charging and screening in electronic devices. Such a fundamental material property is intimately related to not only the polarizability of individual atoms but also the specific atomic arrangement in the crystal lattice. In this Letter, we present both experimental and theoretical investigations on the dielectric constant of few-layer In2Se3 nanoflakes grown on mica substrates by van der Waals epitaxy. A nondestructive microwave impedance microscope is employed to simultaneously quantify the number of layers and local electrical properties. The measured {$\epsilon$}r increases monotonically as a function of the thickness and saturates to the bulk value at around 6\textendash 8 quintuple layers. The same trend of layer-dependent dielectric constant is also revealed by first-principles calculations. Our results of the dielectric response, being ubiquitously applicable to layered 2D semiconductors, are expected to be significant for this vibrant research field.},
  keywords = {Dielectric Constant,In2Se3 α (3R),Raman,SEM},
  annotation = {00000},
  file = {C\:\\Users\\ffdra\\Zotero\\storage\\ZYZ8MAXQ\\Wu et al. - 2015 - Thickness-Dependent Dielectric Constant of Few-Lay.pdf}
}

@article{wu2016visible,
  title = {Visible to Short Wavelength Infrared {{In}}{\textsubscript{2}}{{Se}}{\textsubscript{3}}-Nanoflake Photodetector Gated by a Ferroelectric Polymer},
  author = {Wu, Guangjian and Wang, Xudong and Wang, Peng and Huang, Hai and Chen, Yan and Sun, Shuo and Shen, Hong and Lin, Tie and Wang, Jianlu and Zhang, Shangtao and Bian, Lifeng and Sun, Jinglan and Meng, Xiangjian and Chu, Junhao},
  year = {2016},
  month = aug,
  journal = {Nanotechnology},
  volume = {27},
  number = {36},
  pages = {364002},
  publisher = {{IOP Publishing}},
  issn = {0957-4484},
  doi = {10.1088/0957-4484/27/36/364002},
  abstract = {Photodetectors based on two-dimensional (2D) transition-metal dichalcogenides have been studied extensively in recent years. However, the detective spectral ranges, dark current and response time are still unsatisfactory, even under high gate and source\textendash drain bias. In this work, the photodetectors of In2Se3 have been fabricated on a ferroelectric field effect transistor structure. Based on this structure, high performance photodetectors have been achieved with a broad photoresponse spectrum (visible to 1550 nm) and quick response (200 {$\mu$}s). Most importantly, with the intrinsic huge electric field derived from the polarization of ferroelectric polymer (P(VDF-TrFE)) gating, a low dark current of the photodetector can be achieved without additional gate bias. These studies present a crucial step for further practical applications for 2D semiconductors.},
  langid = {english},
  keywords = {charge trapping,device,In2Se3 β,photo-transport,Raman},
  annotation = {ZSCC: 0000000[s0]}
}

@article{wu2018rise,
  title = {The Rise of Two-Dimensional van Der {{Waals}} Ferroelectrics},
  author = {Wu, Menghao and Jena, Puru},
  year = {2018},
  month = sep,
  journal = {Wiley Interdisciplinary Reviews: Computational Molecular Science},
  volume = {8},
  number = {5},
  pages = {e1365},
  issn = {1759-0876},
  doi = {10.1002/wcms.1365},
  abstract = {Recent research on ferroelectrics based on two-dimensional (2D) materials may lead to a technological revolution, offering much higher density for integration as well as a better combination of semiconductor properties and non-volatile memories at the nanoscale compared with traditional ferroelectrics. In addition, ferroelectricity can be much more robust than ferromagnetism in 2D. In this study, we review the studies on 2D ferroelectricity starting from 2013, which are mainly first-principles predictions, including functionalization-induced 2D ferroelectricity in prevalent non-polar 2D materials as well as 2D intrinsic ferroelectricity, which are either in-plane or vertical. Although the number of reports on 2D ferroelectricity is still small compared to the large amount of research on 2D ferromagnetism, the potential of these materials to unravel new science and technology has stimulated considerable interest in 2D ferroelectricity, making it a fast developing field. It is interesting to note that 2D ferroelectricity was experimentally realized a year before 2D ferromagnetism, and the large difference in the Curie temperatures of these materials has further demonstrated that 2D ferroelectricity could be much more robust than 2D ferromagnetism. This article is categorized under: Structure and Mechanism {$>$} Computational Materials Science},
  keywords = {computation,ferroelectric,review article},
  annotation = {ZSCC: 0000036}
}

@article{wu2019crystal,
  title = {Crystal Structure and Optical Performance in Bulk {$\gamma$}-{{InSe}} Single Crystals},
  author = {Wu, Min and Xie, Qiyun and Wu, Yizhang and Zheng, Jiajin and Wang, Wei and He, Liang and Wu, Xiaoshan and Lv, Bin},
  year = {2019},
  month = feb,
  journal = {AIP Advances},
  volume = {9},
  number = {2},
  pages = {025013},
  publisher = {{American Institute of Physics}},
  doi = {10.1063/1.5086492},
  abstract = {High purity {$\gamma$}-phase InSe single crystals have been synthesized and characterized by XRD, SEM, EDS and TEM. Detailed temperature dependent Raman and photoluminescence spectroscopy suggests a small blue-shift as temperature decreases. The corresponding blue shift in Raman and photoluminescence can be explained in terms of self-energy and the lattice parameter change induced variation of band gap, respectively. Moreover, bulk InSe exhibits photoresponsivity in a wide spectrum from 400 to 990 nm. The maximum photoresponsivity reaches up to 8.82 mA/W under the wavelength of 800 nm, which is consistent with high absorption at the wavelength.},
  keywords = {EDS,InSe γ (3R),photoluminescence,Raman,SEM,TEM,XRD}
}

@article{wu2019structural,
  title = {Structural {{Quantification}} for {{Graphene}} and {{Related Two-Dimensional Materials}} by {{Raman Spectroscopy}}},
  author = {Wu, Juanxia and Xie, Liming},
  year = {2019},
  month = jan,
  journal = {Analytical Chemistry},
  volume = {91},
  number = {1},
  pages = {468--481},
  publisher = {{American Chemical Society}},
  issn = {0003-2700},
  doi = {10.1021/acs.analchem.8b04991}
}

@article{wu2021atomically,
  title = {Atomically Sharp Interface Enabled Ultrahigh-Speed Non-Volatile Memory Devices},
  author = {Wu, Liangmei and Wang, Aiwei and Shi, Jinan and Yan, Jiahao and Zhou, Zhang and Bian, Ce and Ma, Jiajun and Ma, Ruisong and Liu, Hongtao and Chen, Jiancui and Huang, Yuan and Zhou, Wu and Bao, Lihong and Ouyang, Min and Pennycook, Stephen J. and Pantelides, Sokrates T. and Gao, Hong-Jun},
  year = {2021},
  month = may,
  journal = {Nature Nanotechnology},
  pages = {1--6},
  publisher = {{Nature Publishing Group}},
  issn = {1748-3395},
  doi = {10.1038/s41565-021-00904-5},
  abstract = {The development of high-performance memory devices has played a key role in the innovation of modern electronics. Non-volatile memory devices have manifested high capacity and mechanical reliability as a mainstream technology; however, their performance has been hampered by low extinction ratio and slow operational speed. Despite substantial efforts to improve these characteristics, typical write times of hundreds of micro- or milliseconds remain a few orders of magnitude longer than that of their volatile counterparts. Here we demonstrate non-volatile, floating-gate memory devices based on van der Waals heterostructures with atomically sharp interfaces between different functional elements, achieving ultrahigh-speed programming/erasing operations in the range of nanoseconds with extinction ratio up to 1010. This enhanced performance enables new device capabilities such as multi-bit storage, thus opening up applications in the realm of modern nanoelectronics and offering future fabrication guidelines for device scale up.},
  copyright = {2021 The Author(s), under exclusive licence to Springer Nature Limited},
  langid = {english},
  keywords = {device,flake,graphene,HAADF-STEM,hBN,InSe}
}

@article{xia2007fieldinduced,
  title = {Field-Induced Resistive Switching Based on Space-Charge-Limited Current},
  author = {Xia, Yidong and He, Weiye and Chen, Liang and Meng, Xiangkang and Liu, Zhiguo},
  year = {2007},
  month = jan,
  journal = {Applied Physics Letters},
  volume = {90},
  number = {2},
  pages = {022907},
  publisher = {{American Institute of Physics}},
  issn = {0003-6951},
  doi = {10.1063/1.2430912},
  abstract = {Polycrystalline  (Ba,Sr)(Zr,Ti) O 3 (Ba,Sr)(Zr,Ti)O3  thin films sandwiched between two Pt electrodes have been revealed to exhibit hysteretic current-voltage  ({$\mathsl{I}$}-{$\mathsl{V}$}) (I-V)  characteristics and resistive switching at room temperature. High- and low-resistance states, as well as a less abrupt state transition, occur during the voltage cycle. The maximum ratio between these two resistance states is about 230. Analyses of  {$\mathsl{I}$}-{$\mathsl{V}$} I-V  behaviors have been executed, and it is proposed that space-charge-limited-current conduction in higher voltage region caused by asymmetric electron trapping centers is responsible for such transition of resistance states.}
}

@article{xia2018twodimensional,
  title = {Two-Dimensional n-{{InSe}}/p-{{GeSe}}({{SnS}}) van Der {{Waals}} Heterojunctions: {{High}} Carrier Mobility and Broadband Performance},
  shorttitle = {Two-Dimensional \$n\$-{{InSe}}/\$p\$-{{GeSe}}({{SnS}}) van Der {{Waals}} Heterojunctions},
  author = {Xia, Cong-xin and Du, Juan and Huang, Xiao-wei and Xiao, Wen-bo and Xiong, Wen-qi and Wang, Tian-xing and Wei, Zhong-ming and Jia, Yu and Shi, Jun-jie and Li, Jing-bo},
  year = {2018},
  month = mar,
  journal = {Physical Review B},
  volume = {97},
  number = {11},
  pages = {115416},
  publisher = {{American Physical Society}},
  doi = {10.1103/PhysRevB.97.115416},
  abstract = {Recently, constructing van der Waals (vdW) heterojunctions by stacking different two-dimensional (2D) materials has been considered to be effective strategy to obtain the desired properties. Here, through first-principles calculations, we find theoretically that the 2D n-InSe/p-GeSe(SnS) vdW heterojunctions are the direct-band-gap semiconductor with typical type-II band alignment, facilitating the effective separation of photogenerated electron and hole pairs. Moreover, they possess the high optical absorption strength ({$\sim$}105), broad spectrum width, and excellent carrier mobility ({$\sim$}103cm2V-1s-1). Interestingly, under the influences of the interlayer coupling and external electric field, the characteristics of type-II band alignment is robust, while the band-gap values and band offset are tunable. These results indicate that 2D n-InSe/p-GeSe(SnS) heterojunctions possess excellent optoelectronic and transport properties, and thus can become good candidates for next-generation optoelectronic nanodevices.},
  keywords = {DFT,effective mass,InSe,mobility}
}

@article{xiao2018intrinsic,
  title = {Intrinsic {{Two-Dimensional Ferroelectricity}} with {{Dipole Locking}}},
  author = {Xiao, Jun and Zhu, Hanyu and Wang, Ying and Feng, Wei and Hu, Yunxia and Dasgupta, Arvind and Han, Yimo and Wang, Yuan and Muller, David A. and Martin, Lane W. and Hu, PingAn and Zhang, Xiang},
  year = {2018},
  month = may,
  journal = {Physical Review Letters},
  volume = {120},
  number = {22},
  pages = {227601},
  doi = {10.1103/physrevlett.120.227601},
  abstract = {Out-of-plane ferroelectricity with a high transition temperature in ultrathin films is important for the exploration of new domain physics and scaling down of memory devices. However, depolarizing electrostatic fields and interfacial chemical bonds can destroy this long-range polar order at two-dimensional (2D) limit. Here we report the experimental discovery of the locking between out-of-plane dipoles and in-plane lattice asymmetry in atomically thin In2Se3 crystals, a new stabilization mechanism leading to our observation of intrinsic 2D out-of-plane ferroelectricity. Through second harmonic generation spectroscopy and piezoresponse force microscopy, we found switching of out-of-plane electric polarization requires a flip of nonlinear optical polarization that corresponds to the inversion of in-plane lattice orientation. The polar order shows a very high transition temperature ({$\sim$}700 K) without the assistance of extrinsic screening. This finding of intrinsic 2D ferroelectricity resulting from dipole locking opens up possibilities to explore 2D multiferroic physics and develop ultrahigh density memory devices.},
  keywords = {ferroelectric,film,In2Se3 α (3R),PFM,phase transition,phase transition α-β,second harmonic generation},
  annotation = {00046}
}

@article{xie2020temperaturedependent,
  title = {Temperature-Dependent Phonon Mode and Interband Electronic Transition Evolutions of {$\epsilon$}-{{InSe}} Films Derived by Pulsed Laser Deposition},
  author = {Xie, Mingzhang (谢明章 ) and Li, Ming (李明 ) and Li, Liumeng (李留猛 ) and Zhang, Jinzhong (张金中 ) and Jiang, Kai (姜凯 ) and Shang, Liyan (商丽燕 ) and Li, Yawei (李亚巍 ) and Hu, Zhigao (胡志高 ) and Chu, Junhao (褚君浩 )},
  year = {2020},
  month = sep,
  journal = {Applied Physics Letters},
  volume = {117},
  number = {10},
  pages = {102101},
  publisher = {{American Institute of Physics}},
  issn = {0003-6951},
  doi = {10.1063/5.0021330},
  abstract = {We report the temperature-dependent phonon modes and interband electronic transitions of InSe films on SiO2/Si substrates prepared by pulsed laser deposition. The microstructure results proved the {$\epsilon$} phase structure and monochalcogenide phase composition with well-defined hexagonal InSe sheets. The temperature effects on lattice vibrations were discovered by Raman spectra from 123\,K to 423\,K. The frequency and full width at half maximum of the  A 1 2{$\mathsl{g}$} A2g1 (LO) mode show a strong nonlinearity with the temperature. The energy band structure and electron\textendash phonon interaction were studied by temperature-dependent spectroscopic ellipsometry with the aid of the Tauc\textendash Lorentz model. It was found that five electronic transitions around 1.33, 1.61, 2.53, 3.73, and 4.64\,eV generally show a redshift trend with the temperature. The present results can provide a valuable reference for future optoelectronic applications of InSe films.},
  keywords = {Band gap,EDS,films,InSe ε (2H),Raman,Raman peaks,Raman temperature,SEM,XRD}
}

@article{xu2018computational,
  title = {Computational Design and Property Predictions for Two-Dimensional Nanostructures},
  author = {Xu, Runzhang and Zou, Xiaolong and Liu, Bilu and Cheng, Hui-Ming},
  year = {2018},
  month = may,
  journal = {Materials Today},
  volume = {21},
  number = {4},
  pages = {391--418},
  issn = {1369-7021},
  doi = {10.1016/j.mattod.2018.03.003},
  abstract = {Recent success in isolating and growing various two-dimensional (2D) materials with intriguing properties has pushed forward the search for new 2D nanostructures with novel properties. Current experimental trial-and-error methods face the fundamental challenges of low efficiency and a lack of clear guidelines. In contrast, based on state-of-the-art first-principles calculations and well-developed structural prediction algorithms, computational simulations can not only predict an increasing number of new 2D materials with desirable properties but also suggest their possible synthesis routes. Among them, many predictions, such as the growth of monolayer boron sheets (borophene), piezoelectricity in molybdenum disulfide (MoS2), ferroelectricity in tin telluride (SnTe), topological defects in transition metal dichalcogenides, Dirac cones in borophene, and high carrier mobility and mobility anisotropy in black phosphorene, have been verified by experiments, showing the accuracy of computational approaches, as well as their power in facilitating experimental exploration in 2D flatland. To date, the rapid expansion in theoretical work has generated a large number of very important results, but the overall picture of recent progress, current challenges, and future opportunities is rarely discussed. Accordingly, this review aims at providing information about current trends and future perspectives for 2D materials research. To achieve this, the review is organized as follows: (1) discussion of structural predictions in 2D materials using borophene as an example; (2) predictions of the electronic, optical, mechanical, and magnetic properties in various 2D materials; (3) discussion of the influence of defects on the structures and properties of 2D materials; and (4) evaluation of current progress in computational simulations and perspectives for future development.},
  keywords = {ferroelectric,review article},
  annotation = {00012},
  file = {C\:\\Users\\ffdra\\Zotero\\storage\\I7K4L65P\\S136970211830097X.html}
}

@article{xu2018recent,
  title = {Recent Development of {{PeakForce Tapping}} Mode Atomic Force Microscopy and Its Applications on Nanoscience},
  author = {Xu, Ke and Sun, Weihang and Shao, Yongjian and Wei, Fanan and Zhang, Xiaoxian and Wang, Wei and Li, Peng},
  year = {2018},
  month = dec,
  journal = {Nanotechnology Reviews},
  volume = {7},
  number = {6},
  pages = {605--621},
  publisher = {{De Gruyter}},
  issn = {2191-9097},
  doi = {10.1515/ntrev-2018-0086},
  abstract = {Nanoscience is a booming field incorporating some of the most fundamental questions concerning structure, function, and applications. The cutting-edge research in nanoscience requires access to advanced techniques and instrumentation capable of approaching these unanswered questions. Over the past few decades, atomic force microscopy (AFM) has been developed as a powerful platform, which enables in situ characterization of topological structures, local physical properties, and even manipulating samples at nanometer scale. Currently, an imaging mode called PeakForce Tapping (PFT) has attracted more and more attention due to its advantages of nondestructive characterization, high-resolution imaging, and concurrent quantitative property mapping. In this review, the origin, principle, and advantages of PFT on nanoscience are introduced in detail. Three typical applications of this technique, including high-resolution imaging of soft samples in liquid environment, quantitative nanomechanical property mapping, and electrical/electrochemical property measurement will be reviewed comprehensively. The future trends of PFT technique development will be discussed as well.},
  chapter = {Nanotechnology Reviews},
  langid = {english}
}

@article{xu2020optical,
  title = {Optical Control of Ferroelectric Switching and Multifunctional Devices Based on van Der {{Waals}} Ferroelectric Semiconductors},
  author = {Xu, Kai and Jiang, Wei and Gao, Xueshi and Zhao, Zijing and Low, Tony and Zhu, Wenjuan},
  year = {2020},
  month = nov,
  journal = {Nanoscale},
  volume = {12},
  number = {46},
  pages = {23488--23496},
  publisher = {{Royal Society of Chemistry}},
  doi = {10.1039/d0nr06872a},
  langid = {english},
  keywords = {device,DFT,ferroelectric,FeSmFET,Graphene,In2Se3,In2Se3 α,PFM,Raman,Raman peaks,rectifying junction},
  annotation = {00000  ZSCC: 0000000  0 citations (Crossref) [2021-02-02]}
}

@article{xu2020twodimensional,
  title = {Two-{{Dimensional Antiferroelectricity}} in {{Nanostripe-Ordered}}},
  author = {Xu, Chao},
  year = {2020},
  journal = {Physical Review Letters},
  volume = {125},
  number = {4},
  doi = {10.1103/PhysRevLett.125.047601},
  keywords = {In2Se3 β'}
}

@article{xu2021twodimensional,
  title = {Two-Dimensional Ferroelasticity in van Der {{Waals}} {$\beta$}'-{{In}}{\textsubscript{2}}{{Se}}{\textsubscript{3}}},
  author = {Xu, Chao and Mao, Jianfeng and Guo, Xuyun and Yan, Shanru and Chen, Yancong and Lo, Tsz Wing and Chen, Changsheng and Lei, Dangyuan and Luo, Xin and Hao, Jianhua and Zheng, Changxi and Zhu, Ye},
  year = {2021},
  month = jun,
  journal = {Nature Communications},
  volume = {12},
  number = {1},
  pages = {3665},
  publisher = {{Nature Publishing Group}},
  issn = {2041-1723},
  doi = {10.1038/s41467-021-23882-7},
  abstract = {Two-dimensional (2D) materials exhibit remarkable mechanical properties, enabling their applications as flexible and stretchable ultrathin devices. As the origin of several extraordinary mechanical behaviors, ferroelasticity has also been predicted theoretically in 2D materials, but so far lacks experimental validation and investigation. Here, we present the experimental demonstration of 2D ferroelasticity in both exfoliated and chemical-vapor-deposited {$\beta$}'-In2Se3 down to few-layer thickness. We identify quantitatively 2D spontaneous strain originating from in-plane antiferroelectric distortion, using both atomic-resolution electron microscopy and in situ X-ray diffraction. The symmetry-equivalent strain orientations give rise to three domain variants separated by 60\textdegree{} and 120\textdegree{} domain walls (DWs). Mechanical switching between these ferroelastic domains is achieved under {$\leq$}0.5\% external strain, demonstrating the feasibility to tailor the antiferroelectric polar structure as well as DW patterns through mechanical stimuli. The detailed domain switching mechanism through both DW propagation and domain nucleation is unraveled, and the effects of 3D stacking on such 2D ferroelasticity are also discussed. The observed 2D ferroelasticity here should be widely available in 2D materials with anisotropic lattice distortion, including the 1T' transition metal dichalcogenides with Peierls distortion and 2D ferroelectrics such as the SnTe family, rendering tantalizing potential to tune 2D functionalities through strain or DW engineering.},
  copyright = {2021 The Author(s)},
  langid = {english},
  keywords = {In2Se3 β',phase transition,phase transition β' temperature},
  annotation = {Bandiera\_abtest: a Cc\_license\_type: cc\_by Cg\_type: Nature Research Journals Primary\_atype: Research Subject\_term: Electronic properties and materials;Ferroelectrics and multiferroics Subject\_term\_id: electronic-properties-and-materials;ferroelectrics-and-multiferroics}
}

@article{xue2018multidirection,
  title = {Multidirection {{Piezoelectricity}} in {{Mono-}} and {{Multilayered Hexagonal}} {$\alpha$}-{{In}}{\textsubscript{2}}{{Se}}{\textsubscript{3}}},
  author = {Xue, Fei and Zhang, Junwei and Hu, Weijin and Hsu, Wei-Ting and Han, Ali and Leung, Siu-Fung and Huang, Jing-Kai and Wan, Yi and Liu, Shuhai and Zhang, Junli and He, Jr-Hau and Chang, Wen-Hao and Wang, Zhong Lin and Zhang, Xixiang and Li, Lain-Jong},
  year = {2018},
  month = may,
  journal = {ACS Nano},
  volume = {12},
  number = {5},
  pages = {4976--4983},
  issn = {1936-0851},
  doi = {10.1021/acsnano.8b02152},
  abstract = {Piezoelectric materials have been widely used for sensors, actuators, electronics, and energy conversion. Two-dimensional (2D) ultrathin semiconductors, such as monolayer h-BN and MoS2 with their atom-level geometry, are currently emerging as new and attractive members of the piezoelectric family. However, their piezoelectric polarization is commonly limited to the in-plane direction of odd-number ultrathin layers, largely restricting their application in integrated nanoelectromechanical systems. Recently, theoretical calculations have predicted the existence of out-of-plane and in-plane piezoelectricity in monolayer {$\alpha$}-In2Se3. Here, we experimentally report the coexistence of out-of-plane and in-plane piezoelectricity in monolayer to bulk {$\alpha$}-In2Se3, attributed to their noncentrosymmetry originating from the hexagonal stacking. Specifically, the corresponding d33 piezoelectric coefficient of {$\alpha$}-In2Se3 increases from 0.34 pm/V (monolayer) to 5.6 pm/V (bulk) without any odd\textendash even effect. In addition, we also demonstrate a type of {$\alpha$}-In2Se3-based flexible piezoelectric nanogenerator as an energy-harvesting cell and electronic skin. The out-of-plane and in-plane piezoelectricity in {$\alpha$}-In2Se3 flakes offers an opportunity to enable both directional and nondirectional piezoelectric devices to be applicable for self-powered systems and adaptive and strain-tunable electronics/optoelectronics.},
  keywords = {device,flake,In2Se3 α (2H),Piezoelectric,Raman,second harmonic generation,STEM,strain},
  annotation = {00031}
}

@article{xue2018roomtemperature,
  title = {Room-{{Temperature Ferroelectricity}} in {{Hexagonally Layered}} {$\alpha$}-{{In}}{\textsubscript{2}}{{Se}}{\textsubscript{3}} {{Nanoflakes}} down to the {{Monolayer Limit}}},
  author = {Xue, Fei and Hu, Weijin and Lee, Ko-Chun and Lu, Li-Syuan and Zhang, Junwei and Tang, Hao-Ling and Han, Ali and Hsu, Wei-Ting and Tu, Shaobo and Chang, Wen-Hao and Lien, Chen-Hsin and He, Jr-Hau and Zhang, Zhidong and Li, Lain-Jong and Zhang, Xixiang},
  year = {2018},
  journal = {Advanced Functional Materials},
  volume = {28},
  number = {50},
  pages = {1803738},
  issn = {1616-3028},
  doi = {10.1002/adfm.201803738},
  abstract = {2D ferroelectric material has emerged as an attractive building block for high-density data storage nanodevices. Although monolayer van der Waals ferroelectrics have been theoretically predicted, a key experimental breakthrough for such calculations is still not realized. Here, hexagonally stacking {$\alpha$}-In2Se3 nanoflake, a rarely studied van der Waals polymorph, is reported to exhibit out-of-plane (OOP) and in-plane (IP) ferroelectricity at room temperature. Ferroelectric multidomain states in a hexagonal {$\alpha$}-In2Se3 nanoflake with uniform thickness can survive to 6 nm. Most strikingly, the electric-field-induced polarization switching and hysteresis loop are, respectively, observed down to the bilayer and monolayer ({$\approx$}1.2 nm) thicknesses, which designates it as the thinnest layered ferroelectric and verifies the corresponding theoretical calculation. In addition, two types of ferroelectric nanodevices employing the OOP and IP polarizations in 2H {$\alpha$}-In2Se3 are developed, which are applicable for nonvolatile memories and heterostructure-based nanoelectronics/optoelectronics.},
  copyright = {\textcopyright{} 2018 WILEY-VCH Verlag GmbH \& Co. KGaA, Weinheim},
  langid = {english},
  keywords = {crystal structure,ferroelectric,In2Se3 α (2H),monolayer,PFM,second harmonic generation},
  annotation = {00000}
}

@article{xue2019gatetunable,
  title = {Gate-{{Tunable}} and {{Multidirection-Switchable Memristive Phenomena}} in a {{Van Der Waals Ferroelectric}}},
  author = {Xue, Fei and He, Xin and Retamal, Jos{\'e} Ram{\'o}n Dur{\'a}n and Han, Ali and Zhang, Junwei and Liu, Zhixiong and Huang, Jing-Kai and Hu, Weijin and Tung, Vincent and He, Jr-Hau and Li, Lain-Jong and Zhang, Xixiang},
  year = {2019},
  month = jul,
  journal = {Advanced Materials},
  volume = {31},
  number = {29},
  pages = {1901300},
  publisher = {{John Wiley \& Sons, Ltd}},
  issn = {0935-9648},
  doi = {10.1002/adma.201901300},
  abstract = {Abstract Memristive devices have been extensively demonstrated for applications in nonvolatile memory, computer logic, and biological synapses. Precise control of the conducting paths associated with the resistance switching in memristive devices is critical for optimizing their performances including ON/OFF ratios. Here, gate tunability and multidirectional switching can be implemented in memristors for modulating the conducting paths using hexagonal {$\alpha$}-In2Se3, a semiconducting van der Waals ferroelectric material. The planar memristor based on in-plane (IP) polarization of {$\alpha$}-In2Se3 exhibits a pronounced switchable photocurrent, as well as gate tunability of the channel conductance, ferroelectric polarization, and resistance-switching ratio. The integration of vertical {$\alpha$}-In2Se3 memristors based on out-of-plane (OOP) polarization is demonstrated with a device density of 7.1 ? 109 in.?2 and a resistance-switching ratio of well over 103. A multidirectionally operated {$\alpha$}-In2Se3 memristor is also proposed, enabling the control of the OOP (or IP) resistance state directly by an IP (or OOP) programming pulse, which has not been achieved in other reported memristors. The remarkable behavior and diverse functionalities of these ferroelectric {$\alpha$}-In2Se3 memristors suggest opportunities for future logic circuits and complex neuromorphic computing.},
  keywords = {device,ferroelectric,FeSmFET,In2Se3 α (2H),PFM},
  annotation = {00000  ZSCC: 0000007}
}

@article{xue2021optically,
  title = {Optically {{Controlled Ferroelectric Nanodomains}} for {{Logic-in-Memory Photonic Devices With Simplified Structures}}},
  author = {Xue, Fei and He, Xin and Periyanagounder, Dharmaraj and Ji, Zhigang and Li, Lain-Jong and He, Jr-Hau and Zhang, Xixiang},
  year = {2021},
  month = apr,
  journal = {IEEE Transactions on Electron Devices},
  volume = {68},
  number = {4},
  pages = {1992--1995},
  issn = {1557-9646},
  doi = {10.1109/TED.2021.3059976},
  abstract = {We report visible-light-induced ferroelectric nanodomain reversal in conductive van der Waals (vdW) ferroelectric {$\alpha$}-In2Se3. We show its promising application in two-terminal optoelectronic memory devices. Compared to other vdW material-based optoelectronic memories, such a novel working prototype allows for the device operation confined within a single material channel bridging its two electrodes, which greatly reduces the complexities of device construction. In addition, using {$\alpha$}-In2Se3 memory devices, we also demonstrate the universal OR and AND optical logic gates for logic-in-memory application. Our results provide a new avenue to design simplified structures of vdW material-based optoelectronic memories for dense device integration and next-generation computation.},
  keywords = {FeSmFET,In2Se3 α,Optical polarization,Optical pulses}
}

@article{yan2014effects,
  title = {Effects of Pressure and Deposition Time on the Characteristics of {{In}}{\textsubscript{2}}{{Se}}{\textsubscript{3}} Films Grown by Magnetron Sputtering},
  author = {Yan, Yong and Li, Shasha and Ou, Yufeng and Ji, Yaxin and Yu, Zhou and Liu, Lian and Yan, Chuanpeng and Zhang, Yong and Zhao, Yong},
  year = {2014},
  month = nov,
  journal = {Electronic Materials Letters},
  volume = {10},
  number = {6},
  pages = {1093--1101},
  issn = {2093-6788},
  doi = {10.1007/s13391-014-4081-y},
  abstract = {Crystalline In2Se3 films were fabricated by magnetron sputtering from a sintered In2Se3-compound target and the effects of the deposition parameters, including the working pressure and deposition time, on the phase composition, structure, morphology, and optical properties were clarified. Single-phase {$\kappa$}-In2Se3 was prepared at 4.0 Pa, but {$\gamma$}-In2Se3 was recognized when the working pressure was lower than 4.0 Pa. The optical transmittance of the films decreased to 45\% and the optical band gap varied from 2.9 to 2.0 eV with increasing film thickness from 80 to 967 nm. Metal-semiconductor-metal (MSM) photodetectors based on {$\gamma$}-In2Se3 thin films with various thicknesses were also fabricated. The result of photosensitivity research on such MSM photodetectors suggests that it may be impossible to fabricate wide-absorption-range MSM devices by just using a single material ({$\gamma$}-In2Se3) because of spatial potential fluctuations in the layers.},
  langid = {english},
  keywords = {In2Se3 κ}
}

@article{yan2021inplane,
  title = {In-Plane {{Ferroelectricity}} in {{Few-Layered GeS}} and Its van Der {{Waals Ferroelectric Diodes}}},
  author = {Yan, Yong and Deng, Qunrui and Li, Shasha and Guo, Tao and Li, Xueping and Jiang, Yurong and Song, Xiaohui and Huang, Wen and Yang, Juehan and Xia, Congxin},
  year = {2021},
  journal = {Nanoscale},
  publisher = {{Royal Society of Chemistry}},
  doi = {10.1039/D1NR03807A},
  langid = {english},
  keywords = {GeS}
}

@article{yang2009photovoltaic,
  title = {Photovoltaic Effects in {{BiFeO}}{\textsubscript{3}}},
  author = {Yang, S. Y. and Martin, L. W. and Byrnes, S. J. and Conry, T. E. and Basu, S. R. and Paran, D. and Reichertz, L. and Ihlefeld, J. and Adamo, C. and Melville, A. and Chu, Y.-H. and Yang, C.-H. and Musfeldt, J. L. and Schlom, D. G. and Ager, J. W. and Ramesh, R.},
  year = {2009},
  month = aug,
  journal = {Applied Physics Letters},
  volume = {95},
  number = {6},
  pages = {062909},
  publisher = {{American Institute of Physics}},
  issn = {0003-6951},
  doi = {10.1063/1.3204695},
  abstract = {We report a photovoltaic effect in ferroelectric  BiFeO 3 BiFeO3  thin films. The all-oxide heterostructures with  SrRuO 3 SrRuO3  bottom and tin doped indium oxide top electrodes are characterized by open-circuit voltages  {$\sim$}0.8\textendash 0.9\hspace{0.6em}V {$\sim$}0.8\textendash 0.9\hspace{0.6em}V  and external quantum efficiencies up to  {$\sim$}10\% {$\sim$}10\%  when illuminated with the appropriate light. Efficiencies are at least an order of magnitude larger than the maximum efficiency under sunlight (AM 1.5) thus far reported for ferroelectric-based devices. The dependence of the measured open-circuit voltage on film thickness suggests contributions to the large open-circuit voltage from both the ferroelectric polarization and band offsets at the  BiFeO 3 /tin BiFeO3/tin  doped indium oxide interface.},
  keywords = {BiFeO3}
}

@article{yang2017waferscale,
  title = {Wafer-{{Scale Synthesis}} of {{High-Quality Semiconducting Two-Dimensional Layered InSe}} with {{Broadband Photoresponse}}},
  author = {Yang, Zhibin and Jie, Wenjing and Mak, Chun-Hin and Lin, Shenghuang and Lin, Huihong and Yang, Xianfeng and Yan, Feng and Lau, Shu Ping and Hao, Jianhua},
  year = {2017},
  month = apr,
  journal = {ACS Nano},
  volume = {11},
  number = {4},
  pages = {4225--4236},
  publisher = {{American Chemical Society}},
  issn = {1936-0851},
  doi = {10.1021/acsnano.7b01168},
  abstract = {Large-scale synthesis of two-dimensional (2D) materials is one of the significant issues for fabricating layered materials into practical devices. As one of the typical III\textendash VI semiconductors, InSe has attracted much attention due to its outstanding electrical transport property, attractive quantum physics characteristics, and dramatic photoresponse when it is reduced to atomic scale. However, scalable synthesis of single phase 2D InSe has not yet been achieved so far, greatly hindering further fundamental studies and device applications. Here, we demonstrate the direct growth of wafer-scale layered InSe nanosheets by pulsed laser deposition (PLD). The obtained InSe layers exhibit good uniformity, high crystallinity with macro texture feature, and stoichiometric growth by in situ precise control. The characterization of optical properties indicates that PLD grown InSe nanosheets have a wide range tunable band gap (1.26\textendash 2.20 eV) among the large-scale 2D crystals. The device demonstration of field-effect transistor shows the n-type channel feature with high mobility of 10 cm2 V\textendash 1 s\textendash 1. Upon illumination, InSe-based phototransistors show a broad photoresponse to the wavelengths from ultraviolet to near-infrared. The maximum photoresponsivity attains 27 A/W, plus a response time of 0.5 s for the rise and 1.7 s for the decay, demonstrating the strong and fast photodetection ability. Our findings suggest that the PLD grown InSe would be a promising choice for future device applications in the 2D limit.},
  keywords = {Band gap,device,EDX,FET,film,HRTEM,InSe ε (2H),mobility,photo-transport,photoluminescence,Raman,Raman peaks,SAED,TEM,XRD}
}

@article{yang2019nonvolatile,
  title = {Nonvolatile Memristor Based on Heterostructure of {{2D}} Room-Temperature Ferroelectric {$\alpha$}-{{In}}{\textsubscript{2}}{{Se}}{\textsubscript{3}} and {{WSe}}{\textsubscript{2}}},
  author = {Yang, Huai and Xiao, Mengqi and Cui, Yu and Pan, Longfei and Zhao, Kai and Wei, Zhongming},
  year = {2019},
  month = dec,
  journal = {Science China Information Sciences},
  volume = {62},
  number = {12},
  pages = {1--8},
  publisher = {{Science China Press}},
  issn = {1869-1919},
  doi = {10.1007/s11432-019-1474-3},
  abstract = {Two-dimensional (2D) ferroelectricity is considered to have significant potential for information storage in the future. Semiconducting ferroelectrics that are stable at room temperature afford many possibilities for the assembly of various high-performance heterostructures and fabricating multifuntional devices. Herein, we report the synthesis of a stable van der Waals (vdW) single-crystal semiconductor {$\alpha$}-In2Se3. Piezoresponse force microscopy (PFM) measurements demonstrated the out-of-plane ferroelectricity in {$\sim$}15 layers {$\alpha$}-In2Se3 at room temperature. Both ferroelectric domains with opposite polarization and the tested amplitude and phase curve proved that this semiconductor exhibits hysteresis behavior during polarization. In the {$\alpha$}-In2Se3/WSe2 vertical heterostructure device, the switchable diode effect and nonvolatile memory phenomenon showed a high on/off ratio and a small switching voltage. The distinct resistance switches were further analyzed by band alignment of the heterostructure under different polarizations by first principle calculations. Nonvolatile memory based on vdW ferroelectric heterostructure could provide a novel platform for developing 2D room-temperature ferroelectrics in information storage.},
  copyright = {2019 Science China Press and Springer-Verlag GmbH Germany, part of Springer Nature},
  langid = {english},
  keywords = {ferroelectric,In2Se3 α (3R),PFM,Raman,rectifying junction,TEM,WSe2},
  annotation = {00000  ZSCC: 0000000}
}

@article{yang2020planar,
  title = {Planar {{Direction-Dependent Interfacial Properties}} in {{Monolayer In}}{\textsubscript{2}}{{Se}}{\textsubscript{3}}\textendash{{Metal Contacts}}},
  author = {Yang, Chen and Zhang, Xiuying and Sun, Xiaotian and Zhang, Han and Tang, Hao and Shi, Bowen and Pang, Hua and Xu, Linqiang and Liu, Shiqi and Yang, Jie and Yan, Jiahuan and Xu, Lin and Zhang, Zhiyong and Yang, Jinbo and Yu, Dapeng and Lu, Jing},
  year = {2020},
  month = jan,
  journal = {physica status solidi (b)},
  volume = {257},
  number = {1},
  pages = {1900198},
  publisher = {{John Wiley \& Sons, Ltd}},
  issn = {0370-1972},
  doi = {10.1002/pssb.201900198},
  abstract = {2D semiconductor materials are promising channel materials in the next generation of field-effect transistors (FETs). Recently, 2D In2Se3 has been fabricated and predicted to present planar direction-dependent electrical properties. Herein, ab initio quantum transport simulations are used to explore the interfacial properties between monolayer (ML) In2Se3 and a series of common metal electrodes in a FET. By reversing the planar direction of ML In2Se3, different lateral interfacial properties are obtained: A highly desirable n-type ohmic contact is shaped between Au and up-directed ML In2Se3; however, a p-type Schottky contact appears when the direction is switched. In addition, Ag can generate desirable lateral n-type ohmic contact with both the directions of ML In2Se3. A reversion from n- to p-type lateral Schottky contact occurs in both In and Sc when the direction switches from up to down. Down-directed ML In2Se3 is dynamically unstable with the Pt and transforms into up-direction to form a p-type ohmic contact. The average pinning factor is 0.12 and 0.09 for up-and down-directed ML In2Se3, respectively, implying a strong Fermi-level pinning. Therefore, the planar direction-dependent interfacial properties of ML In2Se3?metal contacts are understood deeply, which can be exploited for the ML In2Se3 FET devices.},
  keywords = {Band gap,band structure,computation,ferroelectric,FET},
  annotation = {00000}
}

@article{ye1998crystal,
  title = {Crystal {{Structures}} and {{Phase Transformation}} in {{In}}{\textsubscript{2}}{{Se}}{\textsubscript{3}} {{Compound Semiconductor}}},
  author = {Ye, Jiping and Soeda, Sigeo and Nakamura, Yoshio and Nittono, Osamu},
  year = {1998},
  month = aug,
  journal = {Japanese Journal of Applied Physics},
  volume = {37},
  number = {8R},
  pages = {4264},
  publisher = {{IOP Publishing}},
  issn = {1347-4065},
  doi = {10.1143/jjap.37.4264},
  langid = {english},
  keywords = {In2Se3 α},
  annotation = {00106  ZSCC: 0000106}
}

@article{yi2011mechanism,
  title = {Mechanism of the {{Switchable Photovoltaic Effect}} in {{Ferroelectric BiFeO}}{\textsubscript{3}}},
  author = {Yi, H. T. and Choi, T. and Choi, S. G. and Oh, Y. S. and Cheong, S.-W.},
  year = {2011},
  month = aug,
  journal = {Advanced Materials},
  volume = {23},
  number = {30},
  pages = {3403--3407},
  publisher = {{John Wiley \& Sons, Ltd}},
  issn = {0935-9648},
  doi = {10.1002/adma.201100805},
  abstract = {Directions of rectification and photocurrent in a ferroelectric BiFeO3 crystal can be switched by applying high-voltage pulses at room temperature. The switching is highly repeatable though cycling and also stable with time. This switchable photocurrent and diode effect results from the combination of polarization flipping and electromigration of oxygen vacancies.},
  keywords = {BiFeO3,ferroelectric,photovoltaics,switchable photocurrent}
}

@article{yin2019robust,
  title = {Robust Trap Effect in Transition Metal Dichalcogenides for Advanced Multifunctional Devices},
  author = {Yin, Lei and He, Peng and Cheng, Ruiqing and Wang, Feng and Wang, Fengmei and Wang, Zhenxing and Wen, Yao and He, Jun},
  year = {2019},
  month = sep,
  journal = {Nature Communications},
  volume = {10},
  number = {1},
  pages = {4133},
  publisher = {{Nature Publishing Group}},
  issn = {2041-1723},
  doi = {10.1038/s41467-019-12200-x},
  abstract = {Defects play a crucial role in determining electric transport properties of two-dimensional transition metal dichalcogenides. In particular, defect-induced deep traps have been demonstrated to possess the ability to capture carriers. However, due to their poor stability and controllability, most studies focus on eliminating this trap effect, and little consideration was devoted to the applications of their inherent capabilities on electronics. Here, we report the realization of robust trap effect, which can capture carriers and store them steadily, in two-dimensional MoS2xSe2(1-x) via synergistic effect of sulphur vacancies and isoelectronic selenium atoms. As a result, infrared detection with very high photoresponsivity (2.4\,\texttimes\,105\,A\,W-1) and photoswitching ratio (\textasciitilde 108), as well as nonvolatile infrared memory with high program/erase ratio (\textasciitilde 108) and fast switching time, are achieved just based on an individual flake. This demonstration of defect engineering opens up an avenue for achieving high-performance infrared detector and memory.},
  copyright = {2019 The Author(s)},
  langid = {english},
  annotation = {Bandiera\_abtest: a Cc\_license\_type: cc\_by Cg\_type: Nature Research Journals Primary\_atype: Research Subject\_term: Electronic devices;Two-dimensional materials Subject\_term\_id: electronic-devices;two-dimensional-materials}
}

@book{ytterdal2003device,
  title = {Device Modeling for Analog and {{RF CMOS}} Circuit Design},
  author = {Ytterdal, Trond and Cheng, Yuhua and Fjeldly, Tor A.},
  year = {2003},
  publisher = {{Wiley}},
  address = {{Hoboken, NJ}},
  isbn = {978-0-471-49869-8},
  langid = {english},
  lccn = {TK7871.99.M44 Y78 2003},
  keywords = {Computer-aided design,Metal oxide semiconductors; Complementary},
  file = {C\:\\Users\\ffdra\\Zotero\\storage\\SNSIM7Z3\\Ytterdal et al. - 2003 - Device modeling for analog and RF CMOS circuit des.pdf}
}

@article{yu2013atomistic,
  title = {Atomistic Structures and Phase Transition of {{In}}{\textsubscript{2}}{{Se}}{\textsubscript{3}} Nanowires Studied by {{DFT}} Calculations and Synchrotron Radiation {{X-ray}} Diffraction},
  author = {Yu, Xiaohui and Hou, Tingjun and Sun, Xuhui and Li, Youyong},
  year = {2013},
  month = may,
  journal = {Solid State Communications},
  volume = {162},
  pages = {28--33},
  issn = {0038-1098},
  doi = {10/gg3f4r},
  abstract = {In2Se3 has potential application in photovoltaic cell, solid-state batteries, phase change memories, and in the manufacture of detectors of ionizing radiation. Here we study the crystal structures and phase transition of In2Se3 by using DFT calculations. Crystal structures of In2Se3 include layered structures and vacancy-ordered-in-screw-form structures. Combining with SR-XRD techniques, our studies show that thermal annealing will merge the layer structures of In2Se3 and improves conductivity of In2Se3. Our results provide structural information for different phases and phase transition mechanism of In2Se3.},
  langid = {english},
  keywords = {A. Semiconductors,B. Thermal annealing,C. SR-XRD,D. DFT calculations},
  annotation = {00000  ZSCC: 0000008}
}

@article{yuan2019realization,
  title = {Realization of {{Quantum Hall Effect}} in {{Chemically Synthesized InSe}}},
  author = {Yuan, Kai and Yin, Ruoyu and Li, Xinqi and Han, Yimo and Wu, Meng and Chen, Shulin and Liu, Shuai and Xu, Xiaolong and Watanabe, Kenji and Taniguchi, Takashi and Muller, David A. and Shi, Junjie and Gao, Peng and Wu, Xiaosong and Ye, Yu and Dai, Lun},
  year = {2019},
  journal = {Advanced Functional Materials},
  volume = {29},
  number = {40},
  pages = {1904032},
  issn = {1616-3028},
  doi = {10.1002/adfm.201904032},
  abstract = {Recently, 2D electron gases have been observed in atomically thin semiconducting crystals, enabling the observation of rich physical phenomena at the quantum level within the ultimate thickness limit. However, the observation of 2D electron gases and subsequent quantum Hall effect require exceptionally high crystalline quality, rendering mechanical exfoliation as the only method to produce high-quality 2D semiconductors of black phosphorus and indium selenide (InSe), which hinder large-scale device applications. Here, the controlled one-step synthesis of high-quality 2D InSe thin films via chemical vapor transport method is reported. The carrier Hall mobility of hexagonal boron nitride (hBN) encapsulated InSe flakes can be up to 5000 cm2 V-1 s-1 at 1.5 K, enabling to observe the quantum Hall effect in a synthesized van der Waals semiconductor. The existence of the quantum Hall effect in directly synthesized 2D semiconductors indicates a high quality of the chemically synthesized 2D semiconductors, which hold promise in quantum devices and applications with high mobility.},
  copyright = {\textcopyright{} 2019 WILEY-VCH Verlag GmbH \& Co. KGaA, Weinheim},
  langid = {english},
  keywords = {2D semiconductor,AFM,chemical vapor transport,device,FET,film,flake transfer,HAADF-STEM,Hall mobility,hBN,indium selenide,InSe γ (3R),mobility,phase,photoluminescence,quantum Hall effect,Raman,Raman peaks,Resistivity/conductivity,Resistivity/conductivity-temperature,STEM,TEM,XRD},
  annotation = {00001}
}

@article{yuan2021review,
  title = {A Review of Ultra-Thin Ferroelectric Films},
  author = {Yuan, Zilin and Sun, Yu and Wang, Dan and Chen, Ke-Qiu and Tang, Li-Ming},
  year = {2021},
  journal = {Journal of Physics: Condensed Matter},
  issn = {0953-8984},
  doi = {10.1088/1361-648X/ac145c},
  abstract = {Ultrathin ferroelectrics are of great technological interest for high-density electronics, particularly non-volatile memories and field-effect transistors . With the rapid development of micro-electronics technology, there is an urgent requirement for higher density electronic devices, which need ultra-thin ferroelectric materials films. However, as ferroelectric films have becomes thinner and thinner, electrical spontaneous polarization signals have been found in a few atomic layers or even monolayer structures. The mechanisms of detection and formation of these signals are not well understood and various controversial interpretations have emerged. In this review, we summarized the recent research progress in the ultra-thin film ferroelectric material, such as HfO2, CuInP2S6, In2Se3, MoTe2 and BaTiO3. Various key aspects of ferroelectric materials are discussed, including crystal structure, ferroelectric mechanism, characterization, fabrication methods, applications, and future outlooks. We hope this review will offer ideas for further improvement of ferroelectric properties of ultra-thin films and promotes practical applications.},
  langid = {english},
  keywords = {In2Se3 α (2H),In2Se3 α (3R),In2Se3 β (1T),In2Se3 β (2H),In2Se3 β (3R),review article}
}

@article{yurchuk2016chargetrapping,
  title = {Charge-{{Trapping Phenomena}} in {{HfO2-Based FeFET-Type Nonvolatile Memories}}},
  author = {Yurchuk, Ekaterina and M{\"u}ller, Johannes and M{\"u}ller, Stefan and Paul, Jan and Pe{\v s}i{\'c}, Milan and {van Bentum}, Ralf and Schroeder, Uwe and Mikolajick, Thomas},
  year = {2016},
  month = sep,
  journal = {IEEE Transactions on Electron Devices},
  volume = {63},
  number = {9},
  pages = {3501--3507},
  issn = {1557-9646},
  doi = {10.1109/TED.2016.2588439},
  abstract = {Ferroelectric field effect transistors (FeFETs) based on ferroelectric hafnium oxide (HfO2) thin films show high potential for future embedded nonvolatile memory applications. However, HfO2 films besides their recently discovered ferroelectric behavior are also prone to undesired charge trapping effects. Therefore, the scope of this paper is to verify the possibility of the charge trapping during standard operation of the HfO2-based FeFET memories. The kinetics of the charge trapping and its interplay with the ferroelectric polarization switching are analyzed in detail using the single-pulse ID-VG technique. Furthermore, the impact of the charge trapping on the important memory characteristics such as retention and endurance is investigated.},
  keywords = {Charge carrier processes,Charge-trapping phenomena,data retention,Delays,endurance,ferroelectric memories,ferroelectric transistor,Hafnium compounds,HfO2-based FeFET,High K dielectric materials,Logic gates,Switches,Transistors}
}

@article{zeng2018gatetunable,
  title = {Gate-Tunable Weak Antilocalization in a Few-Layer {{InSe}}},
  author = {Zeng, Junwen and Liang, Shi-Jun and Gao, Anyuan and Wang, Yu and Pan, Chen and Wu, Chenchen and Liu, Erfu and Zhang, Lili and Cao, Tianjun and Liu, Xiaowei and Fu, Yajun and Wang, Yiping and Watanabe, Kenji and Taniguchi, Takashi and Lu, Haizhou and Miao, Feng},
  year = {2018},
  month = sep,
  journal = {Physical Review B},
  volume = {98},
  number = {12},
  pages = {125414},
  publisher = {{American Physical Society}},
  doi = {10.1103/PhysRevB.98.125414},
  abstract = {Indium selenide (InSe) has attracted tremendous research interest due to its high mobility and potential applications in next-generation electronics. However, the underlying transport mechanism of carriers in thin InSe at low temperatures remains unknown. Here we report the gate voltage and temperature-dependent magnetotransport properties of {$\gamma$}-InSe transistor devices with Hall mobility up to 2455cm2V-1s-1 at the temperature of 1.7 K. We observe a gate-tunable weak antilocalization behavior at lower magnetic field B, which shows a transition to weak localization at higher B region. We find that the magnetotransport data agree well with the Hikami-Larkin-Nagaoka theory. The conductivity and temperature dependence of phase-coherence length reveal that the electron-electron (e-e) interactions are dominated dephasing mechanism for electronic transport in {$\gamma$}-InSe at low temperatures. The maximum phase-coherence length is found to be 320 nm at 1.7 K, larger than that of monolayer MoS2 and few-layer black phosphorus. These results enrich the fundamental understanding of electronic transport properties of InSe.},
  keywords = {device,FET,field effect mobility,flake,Hall mobility,Heterostructure,InSe γ (3R),Localization,magnetoconductance,mobility,weak localization}
}

@article{zhang2014defect,
  title = {Defect States and Charge Trapping Characteristics of {{HfO}}{\textsubscript{2}} Films for High Performance Nonvolatile Memory Applications},
  author = {Zhang, Y. and Shao, Y. Y. and Lu, X. B. and Zeng, M. and Zhang, Z. and Gao, X. S. and Zhang, X. J. and Liu, J.-M. and Dai, J. Y.},
  year = {2014},
  month = oct,
  journal = {Applied Physics Letters},
  volume = {105},
  number = {17},
  pages = {172902},
  publisher = {{American Institute of Physics}},
  issn = {0003-6951},
  doi = {10.1063/1.4900745},
  abstract = {In this work, we present significant charge trapping memory effects of the metal-hafnium oxide-SiO2-Si (MHOS) structure. The devices based on 800\,\textdegree C annealed HfO2 film exhibit a large memory window of {$\sim$}5.1\,V under {$\pm$}10\,V sweeping voltages and excellent charge retention properties with only small charge loss of {$\sim$}2.6\% after more than 104\,s retention. The outstanding memory characteristics are attributed to the high density of deep defect states in HfO2 films. We investigated the defect states in the HfO2 films by photoluminescence and photoluminescence excitation measurements and found that the defect states distributed in deep energy levels ranging from 1.1\,eV to 2.9\,eV below the conduction band. Our work provides further insights for the charge trapping mechanisms of the HfO2 based MHOS devices.}
}

@article{zhang2015phonon,
  title = {Phonon and {{Raman}} Scattering of Two-Dimensional Transition Metal Dichalcogenides from Monolayer, Multilayer to Bulk Material},
  author = {Zhang, Xin and Qiao, Xiao-Fen and Shi, Wei and Wu, Jiang-Bin and Jiang, De-Sheng and Tan, Ping-Heng},
  year = {2015},
  month = apr,
  journal = {Chemical Society Reviews},
  volume = {44},
  number = {9},
  pages = {2757--2785},
  publisher = {{The Royal Society of Chemistry}},
  issn = {1460-4744},
  doi = {10.1039/C4CS00282B},
  abstract = {Two-dimensional (2D) transition metal dichalcogenide (TMD) nanosheets exhibit remarkable electronic and optical properties. The 2D features, sizable bandgaps and recent advances in the synthesis, characterization and device fabrication of the representative MoS2, WS2, WSe2 and MoSe2 TMDs make TMDs very attractive in nanoelectronics and optoelectronics. Similar to graphite and graphene, the atoms within each layer in 2D TMDs are joined together by covalent bonds, while van der Waals interactions keep the layers together. This makes the physical and chemical properties of 2D TMDs layer-dependent. In this review, we discuss the basic lattice vibrations of 2D TMDs from monolayer, multilayer to bulk material, including high-frequency optical phonons, interlayer shear and layer breathing phonons, the Raman selection rule, layer-number evolution of phonons, multiple phonon replica and phonons at the edge of the Brillouin zone. The extensive capabilities of Raman spectroscopy in investigating the properties of TMDs are discussed, such as interlayer coupling, spin\textendash orbit splitting and external perturbations. The interlayer vibrational modes are used in rapid and substrate-free characterization of the layer number of multilayer TMDs and in probing interface coupling in TMD heterostructures. The success of Raman spectroscopy in investigating TMD nanosheets paves the way for experiments on other 2D crystals and related van der Waals heterostructures.},
  langid = {english}
}

@article{zhang2019atomicscale,
  title = {Atomic-{{Scale Observation}} of {{Reversible Thermally Driven Phase Transformation}} in {{2D In}}{\textsubscript{2}}{{Se}}{\textsubscript{3}}},
  author = {Zhang, Fan and Wang, Zhe and Dong, Jiyu and Nie, Anmin and Xiang, Jianyong and Zhu, Wenguang and Liu, Zhongyuan and Tao, Chenggang},
  year = {2019},
  month = jul,
  journal = {ACS Nano},
  volume = {13},
  number = {7},
  pages = {8004--8011},
  publisher = {{American Chemical Society}},
  issn = {1936-0851},
  doi = {10.1021/acsnano.9b02764},
  abstract = {Phase transformation in emerging two-dimensional (2D) materials is crucial for understanding and controlling the interplay between structure and electronic properties. In this work, we investigate 2D In2Se3 synthesized via chemical vapor deposition, a recently discovered 2D ferroelectric material. We observed that In2Se3 layers with thickness ranging from a single layer to {$\sim$}20 layers stabilized at the {$\beta$} phase with a superstructure at room temperature. At around 180 K, the {$\beta$} phase converted to a more stable {$\beta{'}$} phase that was distinct from previously reported phases in 2D In2Se3. The kinetics of the reversible thermally driven {$\beta$}-to-{$\beta{'}$} phase transformation was investigated by temperature-dependent transmission electron microscopy and Raman spectroscopy, corroborated with the expected minimum-energy pathways obtained from our first-principles calculations. Furthermore, density functional theory calculations reveal in-plane ferroelectricity in the {$\beta{'}$} phase. Scanning tunneling spectroscopy measurements show that the indirect bandgap of monolayer {$\beta{'}$} In2Se3 is 2.50 eV, which is larger than that of the multilayer form with a measured value of 2.05 eV. Our results on the reversible thermally driven phase transformation in 2D In2Se3 with thickness down to the monolayer limit and the associated electronic properties will provide insights to tune the functionalities of 2D In2Se3 and other emerging 2D ferroelectric materials and shed light on their numerous potential applications (e.g., nonvolatile memory devices).},
  keywords = {Band gap,CDW,DFT,In2Se3 β,In2Se3 β',phase transition,phase transition β' temperature,SAED,STM,structural transition,structure},
  annotation = {00000  ZSCC: 0000006}
}

@article{zhang2021straininduced,
  title = {Strain-{{Induced Bandgap Enhancement}} of {{InSe Ultrathin Films}} with {{Self-Formed Two-Dimensional Electron Gas}}},
  author = {Zhang, Zhimo and Yuan, Yuan and Zhou, Weiqing and Chen, Chen and Yuan, Shengjun and Zeng, Hualing and Fu, Ying-Shuang and Zhang, Wenhao},
  year = {2021},
  month = jun,
  journal = {ACS Nano},
  volume = {15},
  number = {6},
  pages = {10700--10709},
  publisher = {{American Chemical Society}},
  issn = {1936-0851},
  doi = {10.1021/acsnano.1c03724},
  abstract = {Atomically thin indium selenide (InSe) is a representative two-dimensional (2D) family that have recently attracted extensive interest for their intriguing emerging physics and potential optoelectronic applications with high-performance. Here, by utilizing molecular beam epitaxy and scanning tunneling microscopy, we report a controlled synthesis of InSe thin films down to the monolayer limit and characterization of their electronic properties at atomic scale. Highly versatile growth conditions are developed to fabricate well crystalline InSe films, with a reversible and controllable phase transformation between InSe and In2Se3. The band gap size of InSe films, as enhanced by quantum confinement, increases with decreasing film thickness. Near various categories of lattice imperfections, the band gap becomes significantly enlarged, resulting in a type-I band alignments for lateral heterojunctions. Such band gap enhancement, as unveiled from our first-principles calculations, is ascribed to the local compressive strain imposed by the lattice imperfections. Moreover, InSe films host highly conductive 2D electron gas, manifesting prominent quasiparticle scattering signatures. The 2D electron gas is self-formed via substrate doping of electrons, which shift the Fermi level above the confinement-quantized conduction band. Our study identifies InSe ultrathin film as an appealing system for both fundamental research and potential applications in nanoelectrics and optoelectronics.},
  keywords = {Band gap,DFT,effective mass,film,In2Se3 β',InSe,monolayer,phase transition,Raman,scanning tunneling spectroscopy,STM,strain}
}

@article{zhao2014structure,
  title = {Structure {{Evolutions}} and {{Metallic Transitions}} in {{In}}{\textsubscript{2}}{{Se}}{\textsubscript{3}} {{Under High Pressure}}},
  author = {Zhao, Jinggeng and Yang, Liuxiang},
  year = {2014},
  month = mar,
  journal = {The Journal of Physical Chemistry C},
  volume = {118},
  number = {10},
  pages = {5445--5452},
  publisher = {{American Chemical Society}},
  issn = {1932-7447},
  doi = {10.1021/jp4076383},
  abstract = {Indium selenide (In2Se3) could be used as the phase-change random access memory device and thermoelectric material. The high-pressure investigations are important to the applications on In2Se3 and other A2B3-type materials. In this study, we performed the in situ angle-dispersive X-ray diffraction and Raman spectra experiments and the first-principle calculations on In2Se3 under high pressure, and observed a series of structure phase transitions from experiments and metallized phenomena from calculations. In2Se3 transforms from the original rhombohedral structure (phase I) to a distorted monoclinic structure (phase II) and further to a Bi2Te3-type structure (phase III) at about 0.81 and 5.02 GPa, respectively. And then, phase III{${'}$} of In2Se3 adopts a similar structure with phase III from about 20.6 GPa. At pressures above about 32.1 GPa, In2Se3 starts to crystallize into a defective Th3P4-type structure (phase IV). According to the first-principle calculations, the structural transitions in the compression process induce that In2Se3 transforms from an insulator in phase I, across a semimetal in phase II and III, to a novel metal in the body-centered cubic structure (phase IV). The pressure-induced structure and conducting evolution on In2Se3 are helpful to understand the properties of other selenides upon compression.},
  keywords = {In2Se3 β',phase transition pressure},
  annotation = {ZSCC: 0000025}
}

@article{zhao2015anomalously,
  title = {Anomalously Large Interface Charge in Polarity-Switchable Photovoltaic Devices: An Indication of Mobile Ions in Organic\textendash Inorganic Halide Perovskites},
  shorttitle = {Anomalously Large Interface Charge in Polarity-Switchable Photovoltaic Devices},
  author = {Zhao, Yong and Liang, Chunjun and Zhang, Huimin and Li, Dan and Tian, Ding and Li, Guobao and Jing, Xiping and Zhang, Wenguan and Xiao, Weikang and Liu, Qian and Zhang, Fujun and He, Zhiqun},
  year = {2015},
  month = apr,
  journal = {Energy \& Environmental Science},
  volume = {8},
  number = {4},
  pages = {1256--1260},
  publisher = {{The Royal Society of Chemistry}},
  issn = {1754-5706},
  doi = {10.1039/C4EE04064C},
  abstract = {It is proved that a large amount of mobile ions exist in organic\textendash inorganic halide perovskites. The accumulated ions at the interface change the band bending of the semiconductor, leading to polarity-switchable photovoltaic devices. The interface charge significantly influences the function and performance of perovskite devices. The discovery of the interface charge has important implications for current\textendash voltage hysteresis in perovskite solar cells.},
  langid = {english},
  keywords = {CH3NH3PbI3}
}

@article{zhao2020thickness,
  title = {Thickness Identification of Thin {{InSe}} by Optical Microscopy Methods},
  author = {Zhao, Qinghua and Puebla, Sergio and Zhang, Wenliang and Wang, Tao and Frisenda, Riccardo and {Castellanos-Gomez}, Andres},
  year = {2020},
  month = sep,
  journal = {Advanced Photonics Research},
  volume = {n/a},
  number = {n/a},
  pages = {2000025},
  issn = {2699-9293},
  doi = {10.1002/adpr.202000025},
  abstract = {Indium selenide (InSe), as a novel van der Waals layered semiconductor, has attracted a large research interest thanks to its excellent optical and electrical properties in the ultra-thin limit. Here, we discuss four different optical methods to quantitatively identify the thickness of thin InSe flakes on various substrates, such as SiO2/Si or transparent polymeric substrates. In the case of thin InSe deposited on a transparent substrate, the transmittance of the flake in the blue region of the visible spectrum can be used to estimate the thickness. For InSe supported by SiO2/Si, the thickness of the flakes can be estimated either by assessing their apparent colors or accurately analyzed using a Fresnel-law based fitting model of the optical contrast spectra. Finally, we also studied the thickness dependency of the InSe photoluminescence emission energy, which provides an additional tool to estimate the InSe thickness and it works both for InSe deposited on SiO2/Si and on a transparent polymeric substrate. This article is protected by copyright. All rights reserved.},
  copyright = {This article is protected by copyright. All rights reserved},
  langid = {english},
  keywords = {InSe,optical contrast,photoluminescence,transmittance}
}

@article{zheng2018pulsedlaser,
  title = {Pulsed-Laser Deposition of {{InSe}} Thin Films for the Detection of Thickness-Dependent Bandgap Modification},
  author = {Zheng, Dingheng and Shiogai, Junichi and Fujiwara, Kohei and Tsukazaki, Atsushi},
  year = {2018},
  month = dec,
  journal = {Applied Physics Letters},
  volume = {113},
  number = {25},
  pages = {253501},
  publisher = {{American Institute of Physics}},
  issn = {0003-6951},
  doi = {10.1063/1.5064736},
  abstract = {Layer-structured InSe is one of the intensively studied two-dimensional monochalcogenide semiconductors for optical and electrical devices. Significant features of the InSe device are the thickness dependent bandgap modification resulting in a peak shift of photoluminescence and a drastic variation of electron mobility. In this study, by applying the pulsed-laser deposition technique, we investigated the optical and electrical properties of c-axis oriented InSe films with the thickness varying from a few to hundred nanometers. The energy at the absorption edge systematically shifts from about 3.3 to 1.4\,eV with the increasing thickness. The InSe films on Al2O3(0001) are highly resistive, while those on InP(111) are conductive, which probably originates from the valence mismatch effect at the interface. The electron mobility of the conducting charge carrier at the interface of InSe/InP is enhanced in thicker samples than the critical thickness of about 10\,nm, corresponding to the bandgap modification characterized by the optical measurement. Therefore, the substrate and the film thickness are critically important factors for the materialization of InSe optical and electrical device applications.},
  keywords = {AFM,film,Hall mobility,InSe,mobility,optical properties,Resistivity/conductivity,Resistivity/conductivity-temperature,XRD}
}

@article{zheng2018room,
  title = {Room Temperature In-Plane Ferroelectricity in van Der {{Waals In}}{\textsubscript{2}}{{Se}}{\textsubscript{3}}},
  author = {Zheng, Changxi and Yu, Lei and Zhu, Lin and Collins, James L. and Kim, Dohyung and Lou, Yaoding and Xu, Chao and Li, Meng and Wei, Zheng and Zhang, Yupeng and Edmonds, Mark T. and Li, Shiqiang and Seidel, Jan and Zhu, Ye and Liu, Jefferson Zhe and Tang, Wen-Xin and Fuhrer, Michael S.},
  year = {2018},
  month = jul,
  journal = {Science Advances},
  volume = {4},
  number = {7},
  pages = {eaar7720},
  issn = {2375-2548},
  doi = {10.1126/sciadv.aar7720},
  abstract = {Van der Waals (vdW) assembly of layered materials is a promising paradigm for creating electronic and optoelectronic devices with novel properties. Ferroelectricity in vdW layered materials could enable nonvolatile memory and low-power electronic and optoelectronic switches, but to date, few vdW ferroelectrics have been reported, and few in-plane vdW ferroelectrics are known. We report the discovery of in-plane ferroelectricity in a widely investigated vdW layered material, {$\beta{'}$}-In2Se3. The in-plane ferroelectricity is strongly tied to the formation of one-dimensional superstructures aligning along one of the threefold rotational symmetric directions of the hexagonal lattice in the c plane. Surprisingly, the superstructures and ferroelectricity are stable to 200\textdegree C in both bulk and thin exfoliated layers of In2Se3. Because of the in-plane nature of ferroelectricity, the domains exhibit a strong linear dichroism, enabling novel polarization-dependent optical properties. We report the discovery of room temperature in-plane ferroelectricity in van der Waals In2Se3 with {$\beta{'}$} phase. We report the discovery of room temperature in-plane ferroelectricity in van der Waals In2Se3 with {$\beta{'}$} phase.},
  copyright = {Copyright \textcopyright{} 2018 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC).. This is an open-access article distributed under the terms of the Creative Commons Attribution-NonCommercial license, which permits use, distribution, and reproduction in any medium, so long as the resultant use is not for commercial advantage and provided the original work is properly cited.},
  langid = {english},
  keywords = {air stability,computation,DFT,ferroelectric,In2Se3 β',In2Se3 β' (R3-m),LEED,LEEM,PFM,phase transition,phase transition β' temperature,STM,TEM,XRD},
  annotation = {00030}
}

@article{zheng2019patterning,
  title = {Patterning Metal Contacts on Monolayer {{MoS}} 2 with Vanishing {{Schottky}} Barriers Using Thermal Nanolithography},
  author = {Zheng, Xiaorui and Cal{\`o}, Annalisa and Albisetti, Edoardo and Liu, Xiangyu and Alharbi, Abdullah Sanad M. and Arefe, Ghidewon and Liu, Xiaochi and Spieser, Martin and Yoo, Won Jong and Taniguchi, Takashi and Watanabe, Kenji and Aruta, Carmela and Ciarrocchi, Alberto and Kis, Andras and Lee, Brian S. and Lipson, Michal and Hone, James and Shahrjerdi, Davood and Riedo, Elisa},
  year = {2019},
  month = jan,
  journal = {Nature Electronics},
  volume = {2},
  number = {1},
  pages = {17--25},
  issn = {2520-1131},
  doi = {10.1038/s41928-018-0191-0},
  abstract = {Thermal scanning probe lithography can be used to pattern metal electrodes in direct contact with monolayer MoS2, creating field-effect transistors that exhibit vanishing Schottky barrier heights, high on/off ratios of 1010, no hysteresis, and subthreshold swings as low as 64\,mV per decade.},
  copyright = {2019 The Author(s), under exclusive licence to Springer Nature Limited},
  langid = {english},
  annotation = {00004},
  file = {C\:\\Users\\ffdra\\Zotero\\storage\\E7K5TEBI\\Zheng et al. - 2019 - Patterning metal contacts on monolayer MoS 2 with .pdf;C\:\\Users\\ffdra\\Zotero\\storage\\RWQKVMT8\\Zheng et al. - 2019 - Patterning metal contacts on monolayer MoS 2 with .pdf;C\:\\Users\\ffdra\\Zotero\\storage\\XVNRPAHU\\Zheng et al. - 2019 - Patterning metal contacts on monolayer MoS 2 with .pdf}
}

@article{zhou2014photovoltaic,
  title = {Photovoltaic Properties of {{Pt}}/{{BiFeO}}{\textsubscript{3}} Thin Film/Fluorine-Doped Tin Oxide Capacitor},
  author = {Zhou, Yin'e and Yu, Benfang and Zhu, Xiaoyan and Tan, Xinyu and Qian, Lihua and Liu, Li and Yu, Jun and Yuan, Songliu},
  year = {2014},
  month = oct,
  journal = {Journal of Sol-Gel Science and Technology},
  volume = {72},
  number = {1},
  pages = {74--79},
  publisher = {{Springer US}},
  issn = {1573-4846},
  doi = {10.1007/s10971-014-3424-3},
  abstract = {We study the photovoltaic properties of the Pt/BiFeO3 (BFO) thin film/fluorine-doped tin oxide capacitor and obtain the open circuit voltage (V oc) of 0.44 V and short circuit photocurrent (J sc) of 0.14 mA/cm2 under purple laser illumination. As compared to the BFO film with random orientations, the BFO film with a strong preferred orientation exhibits larger photovoltaic output as a result of its larger spontaneous polarization in the unpoled state. We further demonstrate that there is remarkable influence of external electric field poling on the photovoltage in the two polycrystalline BFO films, and the larger net change of the photovoltage after positive and negative poling in the highly preferred oriented BFO film is believed to be due to its improved crystalline structure. Our experiment results indicate that the responsiveness to external electric field and photovoltaic performance of the narrow-band-gap BFO film can be optimized by structural modification, making it possible to apply in the photosensitive and other optoelectronic devices.},
  copyright = {2014 Springer Science+Business Media New York},
  langid = {english},
  keywords = {BiFeO3}
}

@article{zhou2015controlled,
  title = {Controlled {{Synthesis}} of {{High-Quality Monolayered}} {$\alpha$}-{{In}}{\textsubscript{2}}{{Se}}{\textsubscript{3}} via {{Physical Vapor Deposition}}},
  author = {Zhou, Jiadong and Zeng, Qingsheng and Lv, Danhui and Sun, Linfeng and Niu, Lin and Fu, Wei and Liu, Fucai and Shen, Zexiang and Jin, Chuanhong and Liu, Zheng},
  year = {2015},
  month = oct,
  journal = {Nano Letters},
  volume = {15},
  number = {10},
  pages = {6400--6405},
  issn = {1530-6984},
  doi = {10.1021/acs.nanolett.5b01590},
  abstract = {In this work, we have demonstrated the synthesis of high-quality monolayered {$\alpha$}-In2Se3 using physical vapor deposition method under atmospheric pressure. The quality of the In2Se3 atomic layers has been confirmed by complementary characterization technologies such as Raman/photoluminescence spectroscopies and atomic force microscope. The atomically resolved images have been obtained by the annular dark-field scanning transmission electron microscope. The field-effect transistors have been fabricated using the atomically layered In2Se3 and exhibit p-type semiconducting behaviors with the mobility up to 2.5 cm2/ Vs. The In2Se3 layers also show a good photoresponsivity of 340A/W, as well as 6 ms response time for the rise and 12 ms for the fall. These results make In2Se3 atomic layers a promising candidate for the optoelectronic and photosensitive device applications.},
  keywords = {device,film,HAADF STEM,In2Se3 α (3R),In2Se3 β,phase transition,phase transition α-β,photo-transport,photoluminescence,Raman,STEM,TEM},
  annotation = {00000}
}

@article{zhou2017outofplane,
  title = {Out-of-{{Plane Piezoelectricity}} and {{Ferroelectricity}} in {{Layered}} {$\alpha$}-{{In}}{\textsubscript{2}}{{Se}}{\textsubscript{3}} {{Nanoflakes}}},
  author = {Zhou, Yu and Wu, Di and Zhu, Yihan and Cho, Yujin and He, Qing and Yang, Xiao and Herrera, Kevin and Chu, Zhaodong and Han, Yu and Downer, Michael C. and Peng, Hailin and Lai, Keji},
  year = {2017},
  month = sep,
  journal = {Nano Letters},
  volume = {17},
  number = {9},
  pages = {5508--5513},
  issn = {1530-6984},
  doi = {10.1021/acs.nanolett.7b02198},
  abstract = {Piezoelectric and ferroelectric properties in the two-dimensional (2D) limit are highly desired for nanoelectronic, electromechanical, and optoelectronic applications. Here we report the first experimental evidence of out-of-plane piezoelectricity and ferroelectricity in van der Waals layered {$\alpha$}-In2Se3 nanoflakes. The noncentrosymmetric R3m symmetry of the {$\alpha$}-In2Se3 samples is confirmed by scanning transmission electron microscopy, second-harmonic generation, and Raman spectroscopy measurements. Domains with opposite polarizations are visualized by piezo-response force microscopy. Single-point poling experiments suggest that the polarization is potentially switchable for {$\alpha$}-In2Se3 nanoflakes with thicknesses down to {$\sim$}10 nm. The piezotronic effect is demonstrated in two-terminal devices, where the Schottky barrier can be modulated by the strain-induced piezopotential. Our work on polar {$\alpha$}-In2Se3, one of the model 2D piezoelectrics and ferroelectrics with simple crystal structures, shows its great potential in electronic and photonic applications.},
  keywords = {device,ferroelectric,film,In2Se3 α (3R),PFM,Raman,second harmonic generation,SEM,STEM,TEM},
  annotation = {00000}
}

@article{zhou2018inse,
  title = {{{InSe}} Monolayer: Synthesis, Structure and Ultra-High Second-Harmonic Generation},
  shorttitle = {{{InSe}} Monolayer},
  author = {Zhou, Jiadong and Shi, Jia and Zeng, Qingsheng and Chen, Yu and Niu, Lin and Liu, Fucai and Yu, Ting and Suenaga, Kazu and Liu, Xinfeng and Lin, Junhao and Liu, Zheng},
  year = {2018},
  month = mar,
  journal = {2D Materials},
  volume = {5},
  number = {2},
  pages = {025019},
  publisher = {{IOP Publishing}},
  issn = {2053-1583},
  doi = {10.1088/2053-1583/aab390},
  abstract = {III\textendash IV layered materials such as indium selenide have excellent photoelectronic properties. However, synthesis of materials in such group, especially with a controlled thickness down to monolayer, still remains challenging. Herein, we demonstrate the successful synthesis of monolayer InSe by physical vapor deposition (PVD) method. The high quality of the sample was confirmed by complementary characterization techniques such as Raman spectroscopy, atomic force microscopy (AFM) and high resolution annular dark field scanning transmission electron microscopy (ADF-STEM). We found the co-existence of different stacking sequence ({$\beta$}- and {$\gamma$}-InSe) in the same flake with a sharp grain boundary in few-layered InSe. Edge reconstruction is also observed in monolayer InSe, which has a distinct atomic structure from the bulk lattice. Moreover, we discovered that the second-harmonic generation (SHG) signal from monolayer InSe shows large optical second-order susceptibility that is 1\textendash 2 orders of magnitude higher than MoS2, and even 3 times of the largest value reported in monolayer GaSe. These results make atom-thin InSe a promising candidate for optoelectronic and photosensitive device applications.},
  langid = {english},
  keywords = {device,film,InSe,InSe β (2H),InSe γ (3R),Raman,second harmonic generation,STEM},
  annotation = {ZSCC: 0000024}
}

@article{zhou2019ferroelectric,
  title = {Ferroelectric and Dipole Control of Band Alignment in the Two Dimensional {{InTe}}/{{In}}{\textsubscript{2}}{{Se}}{\textsubscript{3}} Heterostructure},
  author = {Zhou, Bin and Gong, Shi-Jing and Jiang, Kai and Xu, Liping and Zhu, Liangqing and Shang, Liyan and Li, Yawei and Hu, Zhigao and Chu, Junhao},
  year = {2019},
  month = nov,
  journal = {Journal of Physics: Condensed Matter},
  volume = {32},
  number = {5},
  pages = {055703},
  publisher = {{IOP Publishing}},
  issn = {0953-8984},
  doi = {10.1088/1361-648x/ab4d60},
  abstract = {Two dimensional (2D) ferroelectric materials are gaining growing attention due to their nontrival ferroelectricity, and the 2D ferroelectric heterostructures with tunable electronic, optoelectronic, or even magnetic properties, show many novel properties that do not exist in their constituents. In this work, by using the first-principles calculations, we investigate the ferroelectric and dipole control of electronic structures of the 2D ferroelectric heterostructure InTe/In2Se3. It is found that band alignment is closely dependent on the ferroelectric polarization of In2Se3. By switching the polarization of In2Se3, the band alignment of InTe/In2Se3 switches from a staggered (type II) to a straddling type (type I), and the band gap changes from indirect gap 0.76 eV to direct gap 0.15 eV. When the ferroelectric field of In2Se3 is reversed, the band alignment of InTe/In2Se3 switches from type-I to type-II, and the band gap changes from indirect gap 0.76 eV to direct gap 0.15 eV. In addition, we find that the interlayer dipole can also effectively modulate the band structure and induce the type-I to type-II band alignment transition. Our present results indicate that the 2D ferroelectric heterostructure with the tunable band alignment and band gap can be of great significance in the optoelectronic devices.},
  langid = {english},
  keywords = {Band gap,band structure,computation,DFT,dipole moment,ferroelectric},
  annotation = {00000  ZSCC: 0000000}
}

@article{zhou2020anomalous,
  title = {Anomalous Polarization Switching and Permanent Retention in a Ferroelectric Ionic Conductor},
  author = {Zhou, Shuang and You, Lu and Chaturvedi, Apoorva and Morris, Samuel A. and Herrin, Jason S. and Zhang, Na and Abdelsamie, Amr and Hu, Yuzhong and Chen, Jieqiong and Zhou, Yang and Dong, Shuai and Wang, Junling},
  year = {2020},
  month = jan,
  journal = {Materials Horizons},
  volume = {7},
  number = {1},
  pages = {263--274},
  publisher = {{The Royal Society of Chemistry}},
  issn = {2051-6355},
  doi = {10.1039/C9MH01215J},
  abstract = {Ferroelectricity features the electrical switching of off-centered ions between the potential double well of the non-centrosymmetric lattice, while ionic conduction requires long-range hopping of ions across the lattice periodic potentials. The two seemingly mutually exclusive phenomena become strongly intertwined at the nanoscale in electrochemically active materials. However, the intrinsic coupling between ferroelectric switching and ionic activities in bulk crystalline materials remains largely unexplored. Here, we report anomalous polarization switching characteristics of a van der Waals (vdW) layered ferroelectric ionic conductor, CuInP2S6. By synergistic polarization switching and dielectric spectroscopy studies in both temperature and frequency domains, we reveal that the polarization switching kinetics of this compound is ionic-conduction-limited, due to the strong electrostatic interaction between ferroelectric and ionic defect dipoles. The crucial role of thermally-activated displacive instability of Cu ions is confirmed by the single-crystal X-ray crystallography results. The findings provide fundamental insight into the ionic kinetics under an electric field in crystals with coexisting dipole order (ferroelectricity) and disorder (ionic defect and conductivity). Last but not least, we demonstrate that the spontaneous ionic defect-polarization interlock can lead to permanent ferroelectric retention, which is essential for information storage.},
  langid = {english}
}

@article{zhou2020review,
  title = {Review on Ferroelectric/Polar Metals},
  author = {Zhou, Wenxiong and Ariando, Ariando},
  year = {2020},
  journal = {Japanese Journal of Applied Physics},
  issn = {1347-4065},
  doi = {10.35848/1347-4065/ab8bbf},
  abstract = {The possibility of reconciliation between seemingly mutually exclusive properties in one system can not only lead to theoretical breakthroughs but also potential novel applications. The research on the coexistence of two purportedly contra-indicated properties, ferroelectricity/charge polarization and conductivity, proposed by Anderson and Blount over 50 years ago was recently revitalized by the discovery of the first unambiguous polar metal LiOsO3 and further fueled by the demonstration of the first switchable ferroelectric metal WTe2. In this review, we first discuss the reasons why the coexistence of ferroelectricity/charge polarization and conductivity have been deemed incompatible, followed by a review on the history of ferroelectric/polar metals. Secondly, we review the important milestones along with the corresponding mechanisms for the ferroelectric/polar metallic phases in these materials. Thirdly, we summarize the design approaches for ferroelectric/polar metals. Finally, we discuss the future prospects and potential applications of ferroelectric/polar metals.},
  langid = {english},
  keywords = {ferroelectric metal,polar metal,review article,WTe2},
  annotation = {ZSCC: 0000000}
}

@article{zhou2021van,
  title = {Van Der {{Waals}} Layered Ferroelectric {{CuInP2S6}} : {{Physical}} Properties and Device Applications},
  shorttitle = {Van Der {{Waals}} Layered Ferroelectric {{CuInP}} 2 {{S}} 6},
  author = {Zhou, Shuang and You, Lu and Zhou, Hailin and Pu, Yong and Gui, Zhigang and Wang, Junling},
  year = {2021},
  month = feb,
  journal = {Frontiers of Physics},
  volume = {16},
  number = {1},
  pages = {1--30},
  publisher = {{Higher Education Press}},
  issn = {2095-0470},
  doi = {10.1007/s11467-020-0986-0},
  abstract = {Copper indium thiophosphate, CuInP2S6, has attracted much attention in recent years due to its van der Waals layered structure and robust ferroelectricity at room temperature. In this review, we aim to give an overview of the various properties of CuInP2S6, covering structural, ferroelectric, dielectric, piezoelectric and transport properties, as well as its potential applications. We also highlight the remaining questions and possible research directions related to this fascinating material and other compounds of the same family.},
  copyright = {2020 Higher Education Press},
  langid = {english},
  keywords = {Band gap,CuInP2S6,ferroelectric,review article,sub-10nm}
}

@article{zhu2019nanoscale,
  title = {Nanoscale Electronic Devices Based on Transition Metal Dichalcogenides},
  author = {Zhu, Wenjuan and Low, Tony and Wang, Han and Ye, Peide and Duan, Xiangfeng},
  year = {2019},
  month = jun,
  journal = {2D Materials},
  volume = {6},
  number = {3},
  pages = {032004},
  publisher = {{IOP Publishing}},
  issn = {2053-1583},
  doi = {10.1088/2053-1583/ab1ed9},
  abstract = {Two-dimensional (2D) transition metal dichalcogenides (TMDs) have very versatile chemical, electrical and optical properties. In particular, they exhibit rich and highly tunable electronic properties, with a bandgap that spans from semi-metallic up to 2 eV depending on the crystal phase, material composition, number of layers and even external stimulus. This paper provides an overview of the electronic devices and circuits based on 2D TMDs, such as Esaki diodes, resonant tunneling diodes (RTDs), logic and RF transistors, tunneling field-effect transistors (TFETs), static random access memories (SRAMs), dynamic RAM (DRAMs), flash memory, ferroelectric memories, resistitive memories and phase-change memories. We address the basic device principles, the advantages and limitations of these 2D electronic devices, and our perspectives on future developments.},
  langid = {english}
}

@article{zhu2020controllable,
  title = {Controllable Magnetism Driven by Carrier Confinement and Ferroelectric Polarization in a Two-Dimensional Heterostructure},
  author = {Zhu, Ziye and Chen, Xiaofang and Li, Wenbin and Qi, Jingshan},
  year = {2020},
  journal = {Journal of Materials Chemistry C},
  publisher = {{Royal Society of Chemistry}},
  doi = {10.1039/d0tc04272b},
  langid = {english},
  keywords = {CuInP2S6,DFT,InSe,monolayer},
  annotation = {ZSCC: 0000000}
}